CN116072749A - 一种紫磷/二硫化钼异质结光电探测器及制备方法 - Google Patents
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Abstract
本发明公开了一种紫磷/二硫化钼异质结光电探测器及制备方法,所述的紫磷/二硫化钼异质结光电探测器包括:衬底;制备在衬底上的VP层;制备在VP层上的MoS2层;制备在MoS2层上的金属源电极和金属漏电极;MoS2层将VP层完全覆盖,金属源电极和金属漏电极布置在MoS2层和VP层上的重叠部分。本发明利用MoS2保护VP,可实现在空气中对VP的保护,所制备的光电探测器具有很好的稳定性,可长时间暴露在空气中,克服了VP在空气中不稳定的关键应用瓶颈;本发明利用VP和MoS2构筑成异质结,基于VP的光门控效应,VP/MoS2异质结器件展现出极高的响应度,探测率及外量子效率。
Description
技术领域
本发明涉及光电探测技术领域,具体涉及一种紫磷/二硫化钼异质结光电探测器及制备方法。
背景技术
光电探测器是一种能够将光信号转换成电信号的电子器件,是光电系统的重要组成部分。随着信息时代的发展,光电设备已经广泛应用于日常众多领域,包括光电显示器、成像、环境监控、光通信、军事、安全检查等。光电探测器作为光电设备的核心部件,它的研究与应用不断地推动科学技术的发展。
二维材料因独特的物理、化学和电子特性使其在下一代光电子器件领域具有广阔的应用前景。其中,二维过渡金属硫族化合物(TMDs,如MoS2、WSe2等)具有厚度可调的带隙、高的载流子迁移率、强的光物质相互作用和柔性结构,可用于构建高性能场效晶体管、光电探测器、存储器、太阳能电池和自旋电子器件等。同时,二维材料可以像搭积木一样灵活组合,通过设计得到二维材料异质结,弥补不同二维材料各自的不足,从而获得更优良的光电特性,异质结结构为制备新型光电器件提供了巨大的机会,因此,探索基于新型二维材料的高性能光电器件的异质结构是非常重要的。
紫磷(VP)是一种新兴的二维元素半导体,具有优良的特性,如稀有的p型导电特性,高达7000cm2/(V·s)的载流子迁移率,单层直接带隙为2.50eV,极高的机械强度以及独特的各向异性,这些特性为紫磷制备高性能光电器件提供了良好的条件。然而,由于VP固有的环境不稳定性,严重阻碍了对其基本特性和光电器件应用的研究。因此,保护VP的环境稳定性,设计和制备基于VP的高性能光电探测器是迫切而有必要的。
发明内容
针对现有技术存在的不足,本发明的目的在于,提供一种紫磷/二硫化钼异质结光电探测器、制备方法,解决现有技术中的紫磷材料在空气中不稳定的技术问题。
为了解决上述技术问题,本发明采用如下技术方案予以实现:一种紫磷/二硫化钼异质结光电探测器,所述的紫磷/二硫化钼异质结光电探测器包括:
衬底;制备在所述的衬底上的VP层;制备在所述的VP层上的MoS2层;制备在所述的MoS2层上的金属源电极和金属漏电极;
所述的MoS2层将VP层完全覆盖,所述的金属源电极和金属漏电极布置在MoS2层和VP层上的重叠部分。
本发明还具有如下技术特征:
所述的衬底为刚性衬底或柔性衬底。
所述的刚性衬底为表面设置二氧化硅绝缘层的硅衬底、石英玻璃、蓝宝石或云母;
所述的柔性衬底为聚酰亚胺、聚二甲基硅氧烷或聚对苯二甲酸乙二醇酯等。
所述的VP层的厚度为1nm~150nm。
所述的MoS2层的厚度为1nm~100nm。
所述的金属源电极或金属漏电极选自Cr、Ti、Ni、Au、Pd、Pt和Ag中的一种或者多种的组合。
所述的金属源电极或金属漏电极的厚度为5nm~80nm。
上述的紫磷/二硫化钼异质结光电探测器的制备方法,包括如下步骤:
步骤1:对衬底进行超声清洗,并吹干;
步骤2:采用机械剥离转移方法将底层二维半导体VP层转移至衬底表面,形成VP层;
步骤3:采用机械剥离转移方法将顶层二维半导体MoS2层转移至聚二甲基硅氧烷(PDMS)衬底上,制备MoS2层;
步骤4:通过微机械转移平台,将步骤3制备的MoS2层从PDMS衬底转移到步骤2制备的VP层上,使VP层完全被MoS2层覆盖;
步骤5:在衬底上制备金属源电极和金属漏电极,定义电极形状,确保金属源电极和金属漏电极布置在MoS2层和VP层上的重叠部分,
得到紫磷/二硫化钼异质结光电探测器。
步骤5中,利用紫外光刻技术、电子束曝光技术或激光直写技术定义电极图案,结合热蒸镀、电子束蒸镀或磁控溅射及lift-off工艺制备金属源电极和金属漏电极。
上述的紫磷/二硫化钼异质结光电探测器用于光电探测的应用。
本发明与现有技术相比,具有如下技术效果:
(Ⅰ)本发明利用MoS2保护VP,可实现在空气中对VP的保护,所制备的光电探测器具有很好的稳定性,可长时间暴露在空气中,克服了VP在空气中不稳定的关键应用瓶颈;
(Ⅱ)本发明利用VP和MoS2构筑成异质结,MoS2层作为载流子传输沟道,其中VP与MoS2的异质结区域为整个器件的光敏层,光照下所产生的光生载流子在异质结界面有效分离,VP层中的光生电子注入到MoS2层使得光电探测器的电流增加,MoS2层中的光生空穴捕获到VP中,充当局域栅极诱导MoS2中具有更多的电子,并调节沟道电导。基于以上的光门控效应,VP/MoS2异质结器件展现出极高的响应度,探测率及外量子效率。
(Ⅲ)本发明的总体结构具有结构简单、成本低、承载力高、可靠性高、易于维护等特点。
附图说明
图1是紫磷/二硫化钼异质结光电探测器的结构示意图。
图2是紫磷/二硫化钼异质结光电探测器的光学显微镜图片。
图3是紫磷/二硫化钼异质结光电探测器在532nm光照不同光功率下的响应度曲线。
图4是紫磷/二硫化钼异质结光电探测器在532nm光照不同光功率下的探测率和外量子效率曲线。图5是VP器件在空前中放置三天前后的输出曲线及紫磷/二硫化钼异质结光电探测器在空气中放置一个月前后的输出曲线。
附图中各个标号含义:
1-衬底;2-VP层;3-MoS2层;4-金属源电极4;5-金属漏电极;
以下结合实施例对本发明的具体内容作进一步详细解释说明。
具体实施方式
以下给出本发明的具体实施例,需要说明的是本发明并不局限于以下具体实施例,凡在本申请技术方案基础上做的等同变换均落入本发明的保护范围。
本发明所用的术语“上”、“下”、“前”、“后”、“顶”、“底”等指示的方位或位置关系仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,内”、“外”是指相应部件轮廓的内和外,不能将上述术语理解为对本发明的限制。
在本发明中,在未作相反说明的情况下,术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解,例如,可以是固定连接,也可以是可拆卸连接或成一体;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的技术人员而言,可以根据具体情况理解上述术语在本发明中的具体含义。
本发明中的所有部件,如无特殊说明,全部采用现有技术中已知的部件。
实施例1:
遵从上述技术方案,如图1-5所示,一种紫磷/二硫化钼异质结光电探测器,自下而上依次包括:衬底1、VP层2、MoS2层3、金属源电极4、金属漏电极5,MoS2层3位于VP层2上方且完全将VP层2覆盖,MoS2层3上方设置有金属源电极4和金属漏电极5,金属源电极4和金属漏电极5均置于VP层2与MoS2层3重叠区域上方。
在此,我们通过将几层的VP和MoS2固定在一起,构建了VP/MoS2范德瓦尔斯异质结构,旨在利用两种材料的协同效应实现高性能的二维光电探测器。此外,MoS2可以作为VP的保护层,抑制其环境降解,使得VP/MoS2异质结构器件在环境空气中表现出高稳定性。
作为本实施例的一种优选:
所述的衬底为刚性衬底或柔性衬底。
所述的刚性衬底为表面设置二氧化硅绝缘层的硅衬底、石英玻璃、蓝宝石或云母;
所述的柔性衬底为聚酰亚胺、聚二甲基硅氧烷或聚对苯二甲酸乙二醇酯等。
所述的VP层的厚度为1nm~150nm。
所述的MoS2层的厚度为1nm~100nm。
所述的金属源电极或金属漏电极选自Cr、Ti、Ni、Au、Pd、Pt和Ag中的一种或者多种的组合。
所述的金属源电极或金属漏电极的厚度为5nm~80nm。
作为本实施例的一种优选:
紫磷/二硫化钼异质结光电探测器的制备方法,包括如下步骤:
步骤1:对衬底进行超声清洗,并吹干;
步骤2:采用机械剥离转移方法将底层二维半导体VP层转移至衬底表面,形成VP层;
步骤3:采用机械剥离转移方法将顶层二维半导体MoS2层转移至聚二甲基硅氧烷(PDMS)衬底上,形成MoS2层;
步骤4:通过微机械转移平台,将步骤3制备的MoS2层从PDMS衬底转移到步骤2制备的VP层上,使VP层完全被MoS2层覆盖;
步骤5:在衬底上制备金属源电极和金属漏电极,定义电极形状,确保金属源电极和金属漏电极布置在MoS2层和VP层上的重叠部分,
得到紫磷/二硫化钼异质结光电探测器。
步骤5中,利用紫外光刻技术、电子束曝光技术或激光直写技术定义电极图案,结合热蒸镀、电子束蒸镀或磁控溅射及lift-off工艺制备金属源电极和金属漏电极。
作为本实施例的一种优选:
本实施例中VP层的厚度约为106nm,MoS2层的厚度约为4nm。
本实施例制备的异质结光电探测器中,衬底为Si/SiO2;金属源、漏电极为Cr/Au,其厚度为Cr:10nm,Au:60nm。
具体步骤如下:
1、VP层制备及转移
(1)将裁好的氧化硅片(1cm×1cm)作为衬底,放入去离子水、丙酮、乙醇和去离子水中依次超声清洗衬底10min,然后用氮气枪吹干备用;
(2)VP层通过机械剥离的方法获得:用镊子夹取适量VP单晶并将其放置在蓝膜胶带上,用空白的胶带区域对VP材料进行反复的剥离,直至胶带表面的VP样品呈淡黄色即可获得较薄的VP层。再将剥离好VP的胶带贴在已清洗备用的硅片上,对其轻轻按压并静置5分钟后揭起胶带,然后在光学显微镜下对剥离下来的VP层进行观察,选取合适厚度及大小的VP层备用;
2、MoS2层制备及转移
利用如上所述相同的方法利用胶带的黏附力制备不同厚度的MoS2层,将其粘附在PDMS膜上,利用PDMS与MoS2之间的黏附力大于MoS2层间黏附力,从而将MoS2层剥离在PDMS膜上。
3、二维范德华异质结VP/MoS2的制备
(1)将PDMS上没有MoS2的一侧粘至载玻片的上表面,将载玻片有MoS2层的PDMS侧朝下,安装在显微镜辅助的微区转移平台上;
(2)在显微镜视野下,找到之前选取的VP层以及MoS2层,将两者对准,慢慢转动旋钮并不断及时调整两者位置,使两者不断贴近;
(3)当在同一视野下,VP层以及MoS2层都能清晰看见时,将衬底加热至100℃左右,使两种材料紧密接触,等待10min左右。升起载玻片,将PDMS膜抬起,获得范德华异质结VP/MoS2。
4、二维范德华异质结紫磷/二硫化钼异质结光电探测器的制备
(1)将上述制备的范德华异质结通过匀胶机旋涂光刻胶聚甲基丙烯酸甲酯(PMMA),并在130℃下加热3分钟;利用CAD Design 3d Max软件设计源、漏电极图形;并利用电子束曝光系统对电极图案进行精准定位曝光,然后显影和定影;
(2)利用热蒸镀技术沉积10nm Cr和60nm Au;然后在丙酮中清洗,去除光刻胶,再用氮气枪吹干,制备出源、漏电极,形成紫磷/二硫化钼异质结光电探测器,如图2所示。
5、二维范德华异质结紫磷/二硫化钼异质结光电探测器光电性能测试
使用532nm波长的激光照射样品,对制备的VP/MoS2异质结器件进行光电性能测试。
从图3和图4中可以看出器件显示出超高的响应度(3.82×105A/W)、探测率(9.17×1013Jones)及外量子效率(8.91×108%),展示出优异的光电探测性能。
此外,图5中VP器件和紫磷/二硫化钼异质结光电探测器的稳定性研究表明,VP器件在空气中放置三天后就不导通了。相比之下,紫磷/二硫化钼异质结光电探测器在空气中暴露30天后,其电导率仅显示出微弱的下降,显示出其优越的空气稳定性。结果表明,通过构筑VP/MoS2异质结不仅可以对VP材料进行有效的保护,并且该异质结器件表现出优异的光电探测性能,在光电子器件领域具有极大的应用前景。
本发明公开了一种紫磷/二硫化钼(VP/MoS2)异质结光电探测器及其制备方法。所述的VP/MoS2异质结光电探测器自下而上依次是衬底、VP层、MoS2层和金属源电极、金属漏电极,通过先在衬底上制备VP层,在此基础上转移MoS2层至VP表面,两种半导体通过范德华力相结合,形成范德华异质结,再制备金属源、漏电极,形成范德华异质结光电探测器。
本发明通过构筑范德华异质结,使得其在光照条件下产生的电子与空穴在异质结界面迅速分离,显著提高所制备的光电探测器的响应度、探测率和外量子效率。
以上所述的,仅是本发明的较优具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本领域的技术人员在本发明所揭露的技术范围内,不经创造性劳动想到的变化或替换,都涵盖在本发明的保护范围之内。
Claims (9)
1.一种紫磷/二硫化钼异质结光电探测器,其特征在于,所述的紫磷/二硫化钼异质结光电探测器包括:
衬底;
制备在所述的衬底上的VP层;
制备在所述的VP层上的MoS2层;
制备在所述的MoS2层上的金属源电极和金属漏电极;
所述的MoS2层将VP层完全覆盖;
所述的金属源电极和金属漏电极放置在MoS2层和VP层上的重叠部分。
2.如权利要求1所述的紫磷/二硫化钼异质结光电探测器,其特征在于,所述的衬底为刚性衬底或柔性衬底。
3.如权利要求2所述的紫磷/二硫化钼异质结光电探测器,其特征在于:所述的刚性衬底为表面设置二氧化硅绝缘层的硅衬底、石英玻璃、蓝宝石或云母;
所述的柔性衬底为聚酰亚胺、聚二甲基硅氧烷或聚对苯二甲酸乙二醇酯。
4.如权利要求1所述的紫磷/二硫化钼异质结光电探测器,其特征在于:所述的VP层的厚度为1nm~150nm。
5.如权利要求1所述的紫磷/二硫化钼异质结光电探测器,其特征在于,所述的MoS2层的厚度为1nm~100nm。
6.如权利要求1所述的紫磷/二硫化钼异质结光电探测器,其特征在于,所述的金属源电极或金属漏电极选自Cr、Ti、Ni、Au、Pd、Pt和Ag中的一种或者多种的组合。
7.如权利要求1所述的紫磷/二硫化钼异质结光电探测器,其特征在于,所述的金属源电极或金属漏电极的厚度为5nm~80nm。
8.权利要求1-7任一一条权利要求所述的紫磷/二硫化钼异质结光电探测器的制备方法,其特征在于,包括如下步骤:
步骤1:对衬底进行超声清洗,并吹干;
步骤2:采用机械剥离转移方法将二维半导体VP层转移至衬底表面,形成VP层;
步骤3:采用机械剥离转移方法将二维半导体MoS2层转移至聚二甲基硅氧烷衬底上,形成MoS2层;
步骤4:通过微机械转移平台,将步骤3制备的MoS2层从PDMS衬底转移到步骤2制备的VP层上,使VP层完全被MoS2层覆盖;
步骤5:在衬底上制备金属源电极和金属漏电极,定义电极形状,确保金属源电极和金属漏电极布置在MoS2层和VP层上的重叠部分,
得到紫磷/二硫化钼异质结光电探测器。
9.如权利要求8所述的紫磷/二硫化钼异质结光电探测器的制备方法,其特征在于,步骤5中,利用紫外光刻技术、电子束曝光技术或激光直写技术定义电极图案,结合热蒸镀、电子束蒸镀或磁控溅射及lift-off工艺制备金属源电极和金属漏电极。
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