JPS56124244A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS56124244A
JPS56124244A JP2777980A JP2777980A JPS56124244A JP S56124244 A JPS56124244 A JP S56124244A JP 2777980 A JP2777980 A JP 2777980A JP 2777980 A JP2777980 A JP 2777980A JP S56124244 A JPS56124244 A JP S56124244A
Authority
JP
Japan
Prior art keywords
block
substrate
replacing
resist mask
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2777980A
Other languages
Japanese (ja)
Inventor
Kenichi Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP2777980A priority Critical patent/JPS56124244A/en
Publication of JPS56124244A publication Critical patent/JPS56124244A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To improve recovery of perfect chip by eliminating detective block from the chip and replacing it by good one, by using an electrode wiring provided on surface of a semiconductor substrate. CONSTITUTION:IC elements A and A' are provided on a substrate 1 by being divided into blocks A1, A2... and A1', A2'... which are mutually independent from one another. In order to eliminate a defective block A2, surface of the substrate 1 is provided with resist mask 2 having an opening around the block A2 and reverse side is provided with a resist mask 2' having an opening around the block A2', and A2 is removed by etching to take out A2'. And then, on a clean quartz plate 4, the substrate 1 is placed keeping its surface downward, and A2 is eliminated and A2' is inserted. On side surface of A2', polyimide 3 is applied in advance and heated to attach A2' onto the substrate 1 tightly. And then, by providing an A1 wiring 4 and dicing it, an IC element is completed. As this element A was obtained by replacing the defective block A2 with other satisfactory block A2', it shows normal characteristic. It is possible, by using this mechanism, to salvage an expensive IC element.
JP2777980A 1980-03-05 1980-03-05 Semiconductor integrated circuit device Pending JPS56124244A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2777980A JPS56124244A (en) 1980-03-05 1980-03-05 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2777980A JPS56124244A (en) 1980-03-05 1980-03-05 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS56124244A true JPS56124244A (en) 1981-09-29

Family

ID=12230452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2777980A Pending JPS56124244A (en) 1980-03-05 1980-03-05 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS56124244A (en)

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