JPS5230168A - Method for fabrication of semiconductor device - Google Patents
Method for fabrication of semiconductor deviceInfo
- Publication number
- JPS5230168A JPS5230168A JP10620075A JP10620075A JPS5230168A JP S5230168 A JPS5230168 A JP S5230168A JP 10620075 A JP10620075 A JP 10620075A JP 10620075 A JP10620075 A JP 10620075A JP S5230168 A JPS5230168 A JP S5230168A
- Authority
- JP
- Japan
- Prior art keywords
- fabrication
- semiconductor device
- revelopment
- prvent
- contamination
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To keep and protect the surface clean, to prevent revelopment of reversed layer in conduction type wiring and humidity on the protecting film of the surface, to improve accuracy of contact etching, and to prvent from contamination from the outside.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10620075A JPS5230168A (en) | 1975-09-02 | 1975-09-02 | Method for fabrication of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10620075A JPS5230168A (en) | 1975-09-02 | 1975-09-02 | Method for fabrication of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5230168A true JPS5230168A (en) | 1977-03-07 |
Family
ID=14427513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10620075A Pending JPS5230168A (en) | 1975-09-02 | 1975-09-02 | Method for fabrication of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5230168A (en) |
-
1975
- 1975-09-02 JP JP10620075A patent/JPS5230168A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS53108390A (en) | Semiconductor device and its manufacture | |
JPS5228280A (en) | Semiconductor device | |
JPS52104870A (en) | Manufacture for semiconductor device | |
JPS5230168A (en) | Method for fabrication of semiconductor device | |
JPS52151560A (en) | Production of semiconductor device | |
JPS5299085A (en) | Production of semiconductor device | |
JPS5263680A (en) | Production of semiconductor device | |
JPS534469A (en) | Semiconductor device | |
JPS543473A (en) | Manufacture of semiconductor device | |
JPS51118392A (en) | Manuforcturing process for semiconductor unit | |
JPS51113461A (en) | A method for manufacturing semiconductor devices | |
JPS5272577A (en) | Semiconductor device | |
JPS5353964A (en) | Electrode forming method of semiconductor device | |
JPS5436182A (en) | Manufacture for semiconductor device | |
JPS5359368A (en) | Plasma etching | |
JPS51123073A (en) | Insulated gate (type) semiconductor device | |
JPS5384466A (en) | Manufacture of semiconductor device | |
JPS5367362A (en) | Manufacture of semiconductor device | |
JPS5226169A (en) | Photoetching method of silicone oxide layer | |
JPS5264885A (en) | Semiconductor device | |
JPS52125285A (en) | Semiconductor device | |
JPS5412566A (en) | Production of semiconductor device | |
JPS53108771A (en) | Semiconductor device | |
JPS5210676A (en) | Semiconductor device | |
JPS5334473A (en) | Manufacture for semiconductor device |