IL124656A0 - Forming contacts on semiconductor substrates for radiation detectors and imaging devices - Google Patents

Forming contacts on semiconductor substrates for radiation detectors and imaging devices

Info

Publication number
IL124656A0
IL124656A0 IL12465696A IL12465696A IL124656A0 IL 124656 A0 IL124656 A0 IL 124656A0 IL 12465696 A IL12465696 A IL 12465696A IL 12465696 A IL12465696 A IL 12465696A IL 124656 A0 IL124656 A0 IL 124656A0
Authority
IL
Israel
Prior art keywords
substrate
layer
forming
imaging devices
semiconductor substrates
Prior art date
Application number
IL12465696A
Other languages
English (en)
Original Assignee
Simage Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Simage Oy filed Critical Simage Oy
Publication of IL124656A0 publication Critical patent/IL124656A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Electrodes Of Semiconductors (AREA)
IL12465696A 1995-11-29 1996-11-26 Forming contacts on semiconductor substrates for radiation detectors and imaging devices IL124656A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9524387A GB2307785B (en) 1995-11-29 1995-11-29 Forming contacts on semiconductor substrates for radiation detectors and imaging devices
PCT/EP1996/005348 WO1997020342A1 (en) 1995-11-29 1996-11-26 Forming contacts on semiconductor substrates for radiation detectors and imaging devices

Publications (1)

Publication Number Publication Date
IL124656A0 true IL124656A0 (en) 1998-12-06

Family

ID=10784628

Family Applications (2)

Application Number Title Priority Date Filing Date
IL12465696A IL124656A0 (en) 1995-11-29 1996-11-26 Forming contacts on semiconductor substrates for radiation detectors and imaging devices
IL12465698A IL124656A (en) 1995-11-29 1998-05-26 A method of making contacts in semiconductor substrates designed for radiation detectors and imaging devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL12465698A IL124656A (en) 1995-11-29 1998-05-26 A method of making contacts in semiconductor substrates designed for radiation detectors and imaging devices

Country Status (17)

Country Link
US (2) US6046068A (de)
EP (2) EP1001469A3 (de)
JP (2) JP3540325B2 (de)
CN (1) CN1113392C (de)
AT (1) ATE198679T1 (de)
AU (1) AU713954B2 (de)
CA (1) CA2238827C (de)
DE (1) DE69611540T2 (de)
DK (1) DK0864171T3 (de)
ES (1) ES2154850T3 (de)
GB (1) GB2307785B (de)
GR (1) GR3035628T3 (de)
HK (2) HK1004243A1 (de)
IL (2) IL124656A0 (de)
NO (1) NO982444L (de)
PT (1) PT864171E (de)
WO (1) WO1997020342A1 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2289983B (en) 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
GB2352084B (en) * 1999-07-13 2002-11-13 Simage Oy Forming contacts on semiconductor substrates for radiation detectors and imaging devices
US6410922B1 (en) 1995-11-29 2002-06-25 Konstantinos Evangelos Spartiotis Forming contacts on semiconductor substrates for radiation detectors and imaging devices
US20020158207A1 (en) * 1996-11-26 2002-10-31 Simage, Oy. Forming contacts on semiconductor substrates for radiation detectors and imaging devices
GB2325081B (en) * 1997-05-06 2000-01-26 Simage Oy Semiconductor imaging device
US7001849B2 (en) * 1998-07-16 2006-02-21 Sandia National Laboratories Surface treatment and protection method for cadmium zinc telluride crystals
US9029793B2 (en) 1998-11-05 2015-05-12 Siemens Aktiengesellschaft Imaging device
GB2344550A (en) * 1998-12-09 2000-06-14 Ibm Pad design for electronic package
US6284561B1 (en) * 1999-10-08 2001-09-04 United Microelectronics Corp. Method of forming a metal plate of a fingerprint sensor chip on a semiconductor wafer
FI120561B (fi) 2000-03-07 2009-11-30 Planmeca Oy Digitaalikamera, kuvantamislaite ja menetelmä digitaalisessa kuvantamisessa
JP2002246582A (ja) * 2000-10-26 2002-08-30 Canon Inc 放射線検出装置、その製造方法及びシステム
IL143853A0 (en) * 2001-06-19 2002-04-21 Real Time Radiography Ltd Laminated radiation detector and process for its fabrication
US6781132B2 (en) * 2001-08-10 2004-08-24 The Regents Of The University Of Michigan Collimated radiation detector assembly, array of collimated radiation detectors and collimated radiation detector module
US7170062B2 (en) * 2002-03-29 2007-01-30 Oy Ajat Ltd. Conductive adhesive bonded semiconductor substrates for radiation imaging devices
GB0224689D0 (en) * 2002-10-23 2002-12-04 Simage Oy Formation of contacts on semiconductor substrates
DE60328904D1 (de) 2002-10-25 2009-10-01 Ipl Intellectual Property Lice Schaltungssubstrat und verfahren
US7223981B1 (en) 2002-12-04 2007-05-29 Aguila Technologies Inc. Gamma ray detector modules
US7763820B1 (en) 2003-01-27 2010-07-27 Spectramet, Llc Sorting pieces of material based on photonic emissions resulting from multiple sources of stimuli
US20060033029A1 (en) * 2004-08-13 2006-02-16 V-Target Technologies Ltd. Low-voltage, solid-state, ionizing-radiation detector
CN1328598C (zh) * 2005-01-26 2007-07-25 上海大学 共面栅阳极碲锌镉探测器的制备方法
WO2007024302A2 (en) * 2005-05-16 2007-03-01 Ii-Vi Incorporated High performance cdxzn1-xte x-ray and gamma ray radiation detector and method of manufacture thereof
CA2541256A1 (en) * 2006-02-22 2007-08-22 Redlen Technologies Inc. Shielding electrode for monolithic radiation detector
GB0615452D0 (en) * 2006-08-03 2006-09-13 Radiation Watch Ltd Sensors
DE102006046314A1 (de) * 2006-09-29 2008-04-03 Siemens Ag Strahlungsdirektkonvertermodul und Strahlungsdirektkonverter
US7589324B2 (en) * 2006-12-21 2009-09-15 Redlen Technologies Use of solder mask as a protective coating for radiation detector
US7462833B2 (en) * 2007-04-17 2008-12-09 Redlen Technologies Multi-functional cathode packaging design for solid-state radiation detectors
CN101720490B (zh) * 2007-06-29 2013-10-23 皇家飞利浦电子股份有限公司 用于碲化镉部件的电触点
US7955992B2 (en) * 2008-08-08 2011-06-07 Redlen Technologies, Inc. Method of passivating and encapsulating CdTe and CZT segmented detectors
US9202961B2 (en) 2009-02-02 2015-12-01 Redlen Technologies Imaging devices with solid-state radiation detector with improved sensitivity
US8614423B2 (en) * 2009-02-02 2013-12-24 Redlen Technologies, Inc. Solid-state radiation detector with improved sensitivity
JP2010210590A (ja) * 2009-03-12 2010-09-24 Fujifilm Corp 放射線検出器
EP2430475A1 (de) 2009-05-14 2012-03-21 Devicor Medical Products, Inc. Stacked crystal array for detection of photon emissions
US8476101B2 (en) * 2009-12-28 2013-07-02 Redlen Technologies Method of fabricating patterned CZT and CdTe devices
US9000389B2 (en) * 2011-11-22 2015-04-07 General Electric Company Radiation detectors and methods of fabricating radiation detectors
CN106415788B (zh) 2014-04-07 2020-10-16 菲力尔系统公司 用于联接半导体基板的方法和系统
DE102014211602B4 (de) * 2014-06-17 2018-10-25 Siemens Healthcare Gmbh Detektormodul für einen Röntgendetektor
CN107735869A (zh) * 2015-02-17 2018-02-23 瑞德兰科技有限公司 高性能辐射检测器和其制造方法
KR101835089B1 (ko) * 2015-11-16 2018-03-08 주식회사 디알텍 방사선 검출장치와 이를 포함하는 방사선 촬영장치
US11378701B2 (en) 2019-10-08 2022-07-05 Redlen Technologies, Inc. Low dark current radiation detector and method of making the same
US11733408B2 (en) 2020-04-28 2023-08-22 Redlen Technologies, Inc. High-performance radiation detectors and methods of fabricating thereof

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4677740A (en) * 1973-06-29 1987-07-07 Hughes Aircraft Company Forming monolithic planar opto-isolators by selective implantation and proton bombardment
JPS5623783A (en) * 1979-08-01 1981-03-06 Matsushita Electronics Corp Formation of electrode for semiconductor device
US4369458A (en) * 1980-07-01 1983-01-18 Westinghouse Electric Corp. Self-aligned, flip-chip focal plane array configuration
EP0068652B1 (de) * 1981-06-24 1988-05-25 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Photodioden
JPS59227168A (ja) * 1983-06-08 1984-12-20 Fuji Electric Corp Res & Dev Ltd 半導体放射線検出器
JPS604214A (ja) * 1983-06-22 1985-01-10 Toshiba Corp 半導体装置の製造方法
JPS6226812A (ja) * 1985-07-26 1987-02-04 Mitsubishi Electric Corp 半導体装置の製造方法
US4670097A (en) * 1985-12-23 1987-06-02 Gte Products Corporation Method for patterning transparent layers on a transparent substrate
JPS62274715A (ja) * 1986-05-23 1987-11-28 Nec Corp 半導体装置の製造方法
JPS63181481A (ja) * 1987-01-23 1988-07-26 Matsushita Electric Ind Co Ltd 半導体放射線検出器
JPS63299120A (ja) * 1987-05-28 1988-12-06 Mitsubishi Electric Corp 半導体装置の電極形成方法
JPH0240968A (ja) * 1988-07-29 1990-02-09 Matsushita Electric Ind Co Ltd 半導体放射線検出器およびその製造方法
JPH02232978A (ja) * 1989-03-07 1990-09-14 Matsushita Electric Ind Co Ltd 半導体放射線検出器及びその製造方法
DE69013104T2 (de) * 1989-07-29 1995-03-23 Shimadzu Corp Halbleiterstrahlungsbilddetektor und sein Herstellungsverfahren.
US5006488A (en) * 1989-10-06 1991-04-09 International Business Machines Corporation High temperature lift-off process
US5057439A (en) * 1990-02-12 1991-10-15 Electric Power Research Institute Method of fabricating polysilicon emitters for solar cells
GB9015820D0 (en) * 1990-07-18 1990-09-05 Raychem Ltd Processing microchips
US5296407A (en) * 1990-08-30 1994-03-22 Seiko Epson Corporation Method of manufacturing a contact structure for integrated circuits
US5270263A (en) * 1991-12-20 1993-12-14 Micron Technology, Inc. Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering
US5528495A (en) * 1993-09-01 1996-06-18 Schlumberger Technology Corporation Cadmium zinc telluride borehole detector
GB2289983B (en) * 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
BR9510290A (pt) * 1994-12-23 1997-11-11 Digirad Câmera de raios gama semicondutores e sistema médico de formação de imagens

Also Published As

Publication number Publication date
GB9524387D0 (en) 1996-01-31
ATE198679T1 (de) 2001-01-15
NO982444D0 (no) 1998-05-28
EP1001469A3 (de) 2000-09-06
WO1997020342A1 (en) 1997-06-05
CN1113392C (zh) 2003-07-02
GR3035628T3 (en) 2001-06-29
CN1203695A (zh) 1998-12-30
EP0864171A1 (de) 1998-09-16
CA2238827A1 (en) 1997-06-05
JP2000516392A (ja) 2000-12-05
PT864171E (pt) 2001-05-31
HK1010282A1 (en) 1999-06-17
EP0864171B1 (de) 2001-01-10
EP1001469A2 (de) 2000-05-17
US6046068A (en) 2000-04-04
ES2154850T3 (es) 2001-04-16
AU1096797A (en) 1997-06-19
GB2307785A (en) 1997-06-04
JP2003229555A (ja) 2003-08-15
AU713954B2 (en) 1999-12-16
US6215123B1 (en) 2001-04-10
GB2307785B (en) 1998-04-29
NO982444L (no) 1998-07-29
HK1004243A1 (en) 1998-11-20
IL124656A (en) 2001-10-31
DK0864171T3 (da) 2001-01-29
JP3540325B2 (ja) 2004-07-07
DE69611540T2 (de) 2001-04-26
CA2238827C (en) 2002-10-29
DE69611540D1 (de) 2001-02-15

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