DE69611046D1 - Piezoelektrischer Oszillator, spannungsgesteuerter Ozillator, und Herstellungsverfahren derselben - Google Patents

Piezoelektrischer Oszillator, spannungsgesteuerter Ozillator, und Herstellungsverfahren derselben

Info

Publication number
DE69611046D1
DE69611046D1 DE69611046T DE69611046T DE69611046D1 DE 69611046 D1 DE69611046 D1 DE 69611046D1 DE 69611046 T DE69611046 T DE 69611046T DE 69611046 T DE69611046 T DE 69611046T DE 69611046 D1 DE69611046 D1 DE 69611046D1
Authority
DE
Germany
Prior art keywords
oscillator
manufacturing
voltage controlled
piezoelectric
controlled oscillator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69611046T
Other languages
English (en)
Other versions
DE69611046T2 (de
Inventor
Manabu Oka
Yukari Nakajima
Masayuki Kikushima
Kazuhiko Shimodaira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of DE69611046D1 publication Critical patent/DE69611046D1/de
Application granted granted Critical
Publication of DE69611046T2 publication Critical patent/DE69611046T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/0538Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0542Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/02Varying the frequency of the oscillations by electronic means
    • H03B2201/0208Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/02Varying the frequency of the oscillations by electronic means
    • H03B2201/0275Varying the frequency of the oscillations by electronic means the means delivering several selected voltages or currents
    • H03B2201/0283Varying the frequency of the oscillations by electronic means the means delivering several selected voltages or currents the means functioning digitally
    • H03B2201/0291Varying the frequency of the oscillations by electronic means the means delivering several selected voltages or currents the means functioning digitally and being controlled by a processing device, e.g. a microprocessor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/36Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
    • H03B5/366Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current
    • H03B5/368Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current the means being voltage variable capacitance diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03JTUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J2200/00Indexing scheme relating to tuning resonant circuits and selecting resonant circuits
    • H03J2200/10Tuning of a resonator by means of digitally controlled capacitor bank
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/42Piezoelectric device making

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
DE69611046T 1995-02-15 1996-02-12 Piezoelektrischer Oszillator, spannungsgesteuerter Ozillator, und Herstellungsverfahren derselben Expired - Lifetime DE69611046T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2717095 1995-02-15
JP25662395 1995-10-03
JP00269396A JP3421747B2 (ja) 1995-02-15 1996-01-10 圧電発振器及び電圧制御発振器

Publications (2)

Publication Number Publication Date
DE69611046D1 true DE69611046D1 (de) 2001-01-04
DE69611046T2 DE69611046T2 (de) 2001-05-31

Family

ID=27275483

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69611046T Expired - Lifetime DE69611046T2 (de) 1995-02-15 1996-02-12 Piezoelektrischer Oszillator, spannungsgesteuerter Ozillator, und Herstellungsverfahren derselben

Country Status (6)

Country Link
US (2) US5631609A (de)
EP (1) EP0727872B1 (de)
JP (1) JP3421747B2 (de)
CN (1) CN1099754C (de)
DE (1) DE69611046T2 (de)
FI (1) FI112559B (de)

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WO1998031104A1 (fr) * 1997-01-09 1998-07-16 Seiko Epson Corporation Oscillateur a boucle a verrouillage de phase et son procede de fabrication
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JP3769302B2 (ja) 1998-08-07 2006-04-26 セイコーエプソン株式会社 圧電振動子及びこの圧電振動子を実装した回路基板
US6211745B1 (en) 1999-05-03 2001-04-03 Silicon Wave, Inc. Method and apparatus for digitally controlling the capacitance of an integrated circuit device using mos-field effect transistors
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Also Published As

Publication number Publication date
JP3421747B2 (ja) 2003-06-30
CN1099754C (zh) 2003-01-22
US5745012A (en) 1998-04-28
FI960668A0 (fi) 1996-02-14
EP0727872A1 (de) 1996-08-21
EP0727872B1 (de) 2000-11-29
US5631609A (en) 1997-05-20
FI960668A (fi) 1996-08-16
FI112559B (fi) 2003-12-15
CN1135680A (zh) 1996-11-13
DE69611046T2 (de) 2001-05-31
JPH09162345A (ja) 1997-06-20

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