DE69637582D1 - Dünnschichtkondensator, ESD-geschützte Dünnschichtkondensatorstruktur und entsprechende Herstellungsverfahren - Google Patents
Dünnschichtkondensator, ESD-geschützte Dünnschichtkondensatorstruktur und entsprechende HerstellungsverfahrenInfo
- Publication number
- DE69637582D1 DE69637582D1 DE69637582T DE69637582T DE69637582D1 DE 69637582 D1 DE69637582 D1 DE 69637582D1 DE 69637582 T DE69637582 T DE 69637582T DE 69637582 T DE69637582 T DE 69637582T DE 69637582 D1 DE69637582 D1 DE 69637582D1
- Authority
- DE
- Germany
- Prior art keywords
- film capacitor
- thin
- esd
- corresponding manufacturing
- protected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 title 2
- 239000010409 thin film Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/564,878 US5706163A (en) | 1995-11-28 | 1995-11-28 | ESD-protected thin film capacitor structures |
PCT/US1996/017406 WO1997020338A1 (en) | 1995-11-28 | 1996-11-01 | Esd-protected thin film capacitor structures |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69637582D1 true DE69637582D1 (de) | 2008-08-14 |
Family
ID=24256265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69637582T Expired - Lifetime DE69637582D1 (de) | 1995-11-28 | 1996-11-01 | Dünnschichtkondensator, ESD-geschützte Dünnschichtkondensatorstruktur und entsprechende Herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (2) | US5706163A (de) |
EP (1) | EP0870321B1 (de) |
DE (1) | DE69637582D1 (de) |
WO (1) | WO1997020338A1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6597227B1 (en) * | 2000-01-21 | 2003-07-22 | Atheros Communications, Inc. | System for providing electrostatic discharge protection for high-speed integrated circuits |
US7151036B1 (en) * | 2002-07-29 | 2006-12-19 | Vishay-Siliconix | Precision high-frequency capacitor formed on semiconductor substrate |
US6538300B1 (en) * | 2000-09-14 | 2003-03-25 | Vishay Intertechnology, Inc. | Precision high-frequency capacitor formed on semiconductor substrate |
US6633063B2 (en) | 2001-05-04 | 2003-10-14 | Semiconductor Components Industries Llc | Low voltage transient voltage suppressor and method of making |
US6953980B2 (en) * | 2002-06-11 | 2005-10-11 | Semiconductor Components Industries, Llc | Semiconductor filter circuit and method |
FR2841058A1 (fr) * | 2002-06-14 | 2003-12-19 | St Microelectronics Sa | Dispositif electrique comprenant deux supports et une borne de connexion reliee a un condensateur serie et a un limiteur de tension |
CA2564021C (en) | 2005-10-14 | 2010-12-07 | Research In Motion Limited | Mobile device with a smart battery |
JP2009512035A (ja) | 2005-10-14 | 2009-03-19 | リサーチ イン モーション リミテッド | モバイルデバイスのためのバッテリーパックの認証 |
CA2564029C (en) | 2005-10-14 | 2013-07-09 | Research In Motion Limited | Interface and communication protocol for a mobile device with a smart battery |
US7420793B2 (en) * | 2006-01-12 | 2008-09-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Circuit system for protecting thin dielectric devices from ESD induced damages |
US7666751B2 (en) * | 2007-09-21 | 2010-02-23 | Semiconductor Components Industries, Llc | Method of forming a high capacitance diode and structure therefor |
US7579632B2 (en) * | 2007-09-21 | 2009-08-25 | Semiconductor Components Industries, L.L.C. | Multi-channel ESD device and method therefor |
US7538395B2 (en) * | 2007-09-21 | 2009-05-26 | Semiconductor Components Industries, L.L.C. | Method of forming low capacitance ESD device and structure therefor |
US7842969B2 (en) * | 2008-07-10 | 2010-11-30 | Semiconductor Components Industries, Llc | Low clamp voltage ESD device and method therefor |
US7955941B2 (en) * | 2008-09-11 | 2011-06-07 | Semiconductor Components Industries, Llc | Method of forming an integrated semiconductor device and structure therefor |
US7812367B2 (en) * | 2008-10-15 | 2010-10-12 | Semiconductor Components Industries, Llc | Two terminal low capacitance multi-channel ESD device |
US8089095B2 (en) | 2008-10-15 | 2012-01-03 | Semiconductor Components Industries, Llc | Two terminal multi-channel ESD device and method therefor |
WO2015151786A1 (ja) * | 2014-04-03 | 2015-10-08 | 株式会社村田製作所 | 可変容量デバイスおよびその製造方法 |
US20220209750A1 (en) * | 2020-12-29 | 2022-06-30 | Texas Instruments Incorporated | Quality factor of a parasitic capacitance |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3775838A (en) * | 1972-04-24 | 1973-12-04 | Olivetti & Co Spa | Integrated circuit package and construction technique |
JPS5685848A (en) * | 1979-12-15 | 1981-07-13 | Toshiba Corp | Manufacture of bipolar integrated circuit |
JPS62154661A (ja) * | 1985-12-26 | 1987-07-09 | Toshiba Corp | 半導体装置 |
US4758873A (en) * | 1986-05-16 | 1988-07-19 | National Semiconductor Corporation | Balanced MOS capacitor with low stray capacitance and high ESD survival |
US4736271A (en) * | 1987-06-23 | 1988-04-05 | Signetics Corporation | Protection device utilizing one or more subsurface diodes and associated method of manufacture |
US4937660A (en) * | 1988-12-21 | 1990-06-26 | At&T Bell Laboratories | Silicon-based mounting structure for semiconductor optical devices |
JP2786652B2 (ja) * | 1989-02-28 | 1998-08-13 | 株式会社東芝 | 半導体装置 |
JPH02280621A (ja) * | 1989-03-16 | 1990-11-16 | Siemens Ag | トランジスタ回路 |
JP2740038B2 (ja) * | 1990-06-18 | 1998-04-15 | 株式会社東芝 | Mos(mis)型コンデンサー |
US5246872A (en) * | 1991-01-30 | 1993-09-21 | National Semiconductor Corporation | Electrostatic discharge protection device and a method for simultaneously forming MOS devices with both lightly doped and non lightly doped source and drain regions |
US5264723A (en) * | 1992-04-09 | 1993-11-23 | At&T Bell Laboratories | Integrated circuit with MOS capacitor for improved ESD protection |
US5514612A (en) * | 1993-03-03 | 1996-05-07 | California Micro Devices, Inc. | Method of making a semiconductor device with integrated RC network and schottky diode |
US5355014A (en) * | 1993-03-03 | 1994-10-11 | Bhasker Rao | Semiconductor device with integrated RC network and Schottky diode |
US5370766A (en) * | 1993-08-16 | 1994-12-06 | California Micro Devices | Methods for fabrication of thin film inductors, inductor networks and integration with other passive and active devices |
KR970009101B1 (ko) * | 1993-08-18 | 1997-06-05 | 엘지반도체 주식회사 | 정전기(esd) 보호회로의 제조 방법 |
-
1995
- 1995-11-28 US US08/564,878 patent/US5706163A/en not_active Expired - Lifetime
-
1996
- 1996-11-01 DE DE69637582T patent/DE69637582D1/de not_active Expired - Lifetime
- 1996-11-01 EP EP96939511A patent/EP0870321B1/de not_active Expired - Lifetime
- 1996-11-01 WO PCT/US1996/017406 patent/WO1997020338A1/en active Application Filing
-
1997
- 1997-08-18 US US08/914,909 patent/US6121669A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5706163A (en) | 1998-01-06 |
EP0870321B1 (de) | 2008-07-02 |
EP0870321A1 (de) | 1998-10-14 |
WO1997020338A1 (en) | 1997-06-05 |
EP0870321A4 (de) | 2000-10-11 |
US6121669A (en) | 2000-09-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |