DE69602632D1 - Feldeffekttransistor mit Kammstruktur - Google Patents
Feldeffekttransistor mit KammstrukturInfo
- Publication number
- DE69602632D1 DE69602632D1 DE69602632T DE69602632T DE69602632D1 DE 69602632 D1 DE69602632 D1 DE 69602632D1 DE 69602632 T DE69602632 T DE 69602632T DE 69602632 T DE69602632 T DE 69602632T DE 69602632 D1 DE69602632 D1 DE 69602632D1
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistor
- comb structure
- comb
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7041373A JPH08213409A (ja) | 1995-02-06 | 1995-02-06 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69602632D1 true DE69602632D1 (de) | 1999-07-08 |
DE69602632T2 DE69602632T2 (de) | 1999-12-09 |
Family
ID=12606625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69602632T Expired - Fee Related DE69602632T2 (de) | 1995-02-06 | 1996-02-05 | Feldeffekttransistor mit Kammstruktur |
Country Status (4)
Country | Link |
---|---|
US (1) | US5652452A (de) |
EP (1) | EP0725445B1 (de) |
JP (1) | JPH08213409A (de) |
DE (1) | DE69602632T2 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3256110B2 (ja) * | 1995-09-28 | 2002-02-12 | シャープ株式会社 | 液晶表示装置 |
US5681761A (en) * | 1995-12-28 | 1997-10-28 | Philips Electronics North America Corporation | Microwave power SOI-MOSFET with high conductivity metal gate |
JP3129223B2 (ja) * | 1997-02-28 | 2001-01-29 | 日本電気株式会社 | 半導体装置 |
JP3379376B2 (ja) * | 1997-03-14 | 2003-02-24 | 松下電器産業株式会社 | 電界効果トランジスタおよびそれを用いた電力増幅器 |
JP3515886B2 (ja) * | 1997-09-29 | 2004-04-05 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US6373094B2 (en) | 1998-09-11 | 2002-04-16 | Texas Instruments Incorporated | EEPROM cell using conventional process steps |
US6084277A (en) * | 1999-02-18 | 2000-07-04 | Power Integrations, Inc. | Lateral power MOSFET with improved gate design |
US6313512B1 (en) * | 1999-02-25 | 2001-11-06 | Tyco Electronics Logistics Ag | Low source inductance compact FET topology for power amplifiers |
US6398347B1 (en) * | 2000-07-24 | 2002-06-04 | Hewlett-Packard Company | Energy balanced ink jet printhead |
JP3712111B2 (ja) * | 2001-03-30 | 2005-11-02 | ユーディナデバイス株式会社 | 電力増幅用半導体装置 |
US6642578B1 (en) | 2002-07-22 | 2003-11-04 | Anadigics, Inc. | Linearity radio frequency switch with low control voltage |
EP1654765A2 (de) * | 2004-01-10 | 2006-05-10 | Hvvi Semiconductors, Inc. | Leistungshalbleiterbauelement und verfahren dafür querverweis auf verwandte anmeldungen |
US7135747B2 (en) * | 2004-02-25 | 2006-11-14 | Cree, Inc. | Semiconductor devices having thermal spacers |
US8530963B2 (en) * | 2005-01-06 | 2013-09-10 | Estivation Properties Llc | Power semiconductor device and method therefor |
JP2006269835A (ja) * | 2005-03-24 | 2006-10-05 | Nec Electronics Corp | 半導体装置 |
WO2009027488A1 (de) * | 2007-08-31 | 2009-03-05 | Forschungsverbund Berlin E. V. | Plaited-signal-manifold-anschlussstruktur für ein hochfrequenzbauelement und ein solches hochfrequenzbauelement |
JP5106041B2 (ja) * | 2007-10-26 | 2012-12-26 | 株式会社東芝 | 半導体装置 |
JP2009111217A (ja) | 2007-10-31 | 2009-05-21 | Toshiba Corp | 半導体装置 |
JP5728842B2 (ja) * | 2010-07-27 | 2015-06-03 | 住友電気工業株式会社 | 半導体装置 |
JP2012079942A (ja) * | 2010-10-01 | 2012-04-19 | Renesas Electronics Corp | 半導体装置 |
US8557643B2 (en) * | 2011-10-03 | 2013-10-15 | International Business Machines Corporation | Transistor device with reduced gate resistance |
US9779988B2 (en) * | 2013-12-20 | 2017-10-03 | Nxp Usa, Inc. | Semiconductor devices with inner via |
CN103700696A (zh) * | 2013-12-24 | 2014-04-02 | 中国电子科技集团公司第五十五研究所 | 一种均匀散热的串管结构GaN管芯 |
US9064864B1 (en) | 2013-12-30 | 2015-06-23 | Visic Technologies Ltd. | Semiconductor device |
WO2015101973A1 (en) * | 2013-12-30 | 2015-07-09 | Visic Technologies Ltd. | Semiconductor device |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1254302A (en) * | 1968-03-11 | 1971-11-17 | Associated Semiconductor Mft | Improvements in insulated gate field effect transistors |
US4462041A (en) * | 1981-03-20 | 1984-07-24 | Harris Corporation | High speed and current gain insulated gate field effect transistors |
JPS57160148A (en) * | 1981-03-30 | 1982-10-02 | Toshiba Corp | Microwave integrated circuit device |
JPS5853862A (ja) * | 1981-09-25 | 1983-03-30 | Toshiba Corp | 電界効果型半導体装置 |
JPS63150966A (ja) * | 1986-12-13 | 1988-06-23 | Sony Corp | 電界効果型トランジスタ |
US5025296A (en) * | 1988-02-29 | 1991-06-18 | Motorola, Inc. | Center tapped FET |
EP0373803A3 (de) * | 1988-12-16 | 1991-07-10 | Raytheon Company | R.F.-Wechselschalter |
EP0488801B1 (de) * | 1990-11-30 | 1998-02-04 | Sharp Kabushiki Kaisha | Dünnfilm-Halbleitervorrichtung |
US5321291A (en) * | 1991-12-16 | 1994-06-14 | Texas Instruments Incorporated | Power MOSFET transistor |
KR940008009Y1 (ko) * | 1991-12-24 | 1994-11-16 | 금성일렉트론 주식회사 | 가변 동작속도 트랜지스터 |
GB9201004D0 (en) * | 1992-01-17 | 1992-03-11 | Philips Electronic Associated | A semiconductor device comprising an insulated gate field effect device |
US5321292A (en) * | 1992-10-15 | 1994-06-14 | Atmel Corporation | Voltage limiting device having improved gate-aided breakdown |
JPH06151843A (ja) * | 1992-11-02 | 1994-05-31 | Sanyo Electric Co Ltd | 電解効果型トランジスタ |
-
1995
- 1995-02-06 JP JP7041373A patent/JPH08213409A/ja active Pending
-
1996
- 1996-02-02 US US08/595,824 patent/US5652452A/en not_active Expired - Fee Related
- 1996-02-05 EP EP96101606A patent/EP0725445B1/de not_active Expired - Lifetime
- 1996-02-05 DE DE69602632T patent/DE69602632T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0725445B1 (de) | 1999-06-02 |
EP0725445A1 (de) | 1996-08-07 |
DE69602632T2 (de) | 1999-12-09 |
US5652452A (en) | 1997-07-29 |
JPH08213409A (ja) | 1996-08-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC COMPOUND SEMICONDUCTOR DEVICES, LTD., KAWASAKI |
|
8339 | Ceased/non-payment of the annual fee |