DE69528559D1 - Herstellungsverfahren für elektrische Verbindungen zu Materialien mit hohen dielektrischen Konstanten - Google Patents

Herstellungsverfahren für elektrische Verbindungen zu Materialien mit hohen dielektrischen Konstanten

Info

Publication number
DE69528559D1
DE69528559D1 DE69528559T DE69528559T DE69528559D1 DE 69528559 D1 DE69528559 D1 DE 69528559D1 DE 69528559 T DE69528559 T DE 69528559T DE 69528559 T DE69528559 T DE 69528559T DE 69528559 D1 DE69528559 D1 DE 69528559D1
Authority
DE
Germany
Prior art keywords
materials
manufacturing process
electrical connections
high dielectric
dielectric constants
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69528559T
Other languages
English (en)
Other versions
DE69528559T2 (de
Inventor
Yasushiro Nishioka
Scott R Summerfelt
Kyung-Ho Park
Pijush Bhattacharya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69528559D1 publication Critical patent/DE69528559D1/de
Publication of DE69528559T2 publication Critical patent/DE69528559T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/915—Active solid-state devices, e.g. transistors, solid-state diodes with titanium nitride portion or region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
DE69528559T 1994-08-01 1995-07-25 Herstellungsverfahren für elektrische Verbindungen zu Materialien mit hohen dielektrischen Konstanten Expired - Lifetime DE69528559T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/283,467 US5554564A (en) 1994-08-01 1994-08-01 Pre-oxidizing high-dielectric-constant material electrodes

Publications (2)

Publication Number Publication Date
DE69528559D1 true DE69528559D1 (de) 2002-11-21
DE69528559T2 DE69528559T2 (de) 2003-06-26

Family

ID=23086206

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69528559T Expired - Lifetime DE69528559T2 (de) 1994-08-01 1995-07-25 Herstellungsverfahren für elektrische Verbindungen zu Materialien mit hohen dielektrischen Konstanten

Country Status (5)

Country Link
US (3) US5554564A (de)
EP (1) EP0697718B1 (de)
KR (1) KR100356348B1 (de)
DE (1) DE69528559T2 (de)
TW (1) TW293160B (de)

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DE69528559T2 (de) 2003-06-26
US5811851A (en) 1998-09-22
EP0697718A1 (de) 1996-02-21
US5554564A (en) 1996-09-10
US5554866A (en) 1996-09-10
EP0697718B1 (de) 2002-10-16
KR100356348B1 (ko) 2002-12-16
TW293160B (de) 1996-12-11
KR960009181A (ko) 1996-03-22

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