DE69028664D1 - Elektroden für Oxidkeramik enthaltende elektrische Anordnungen - Google Patents

Elektroden für Oxidkeramik enthaltende elektrische Anordnungen

Info

Publication number
DE69028664D1
DE69028664D1 DE69028664T DE69028664T DE69028664D1 DE 69028664 D1 DE69028664 D1 DE 69028664D1 DE 69028664 T DE69028664 T DE 69028664T DE 69028664 T DE69028664 T DE 69028664T DE 69028664 D1 DE69028664 D1 DE 69028664D1
Authority
DE
Germany
Prior art keywords
electrodes
containing oxide
oxide ceramics
electrical arrangements
arrangements containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69028664T
Other languages
English (en)
Other versions
DE69028664T2 (de
Inventor
William H Shepherd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of DE69028664D1 publication Critical patent/DE69028664D1/de
Application granted granted Critical
Publication of DE69028664T2 publication Critical patent/DE69028664T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
    • H01L27/016—Thin-film circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0744—Manufacture or deposition of electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/268—Monolayer with structurally defined element

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Memories (AREA)
  • Ceramic Capacitors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Inorganic Insulating Materials (AREA)
  • Catalysts (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
DE69028664T 1989-07-17 1990-07-07 Elektroden für Oxidkeramik enthaltende elektrische Anordnungen Expired - Fee Related DE69028664T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/380,942 US4982309A (en) 1989-07-17 1989-07-17 Electrodes for electrical ceramic oxide devices

Publications (2)

Publication Number Publication Date
DE69028664D1 true DE69028664D1 (de) 1996-10-31
DE69028664T2 DE69028664T2 (de) 1997-04-17

Family

ID=23503041

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69028664T Expired - Fee Related DE69028664T2 (de) 1989-07-17 1990-07-07 Elektroden für Oxidkeramik enthaltende elektrische Anordnungen

Country Status (7)

Country Link
US (1) US4982309A (de)
EP (1) EP0409018B1 (de)
JP (1) JP3055791B2 (de)
KR (1) KR0165885B1 (de)
AU (1) AU626701B2 (de)
CA (1) CA2021277A1 (de)
DE (1) DE69028664T2 (de)

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EP0415750B1 (de) * 1989-08-30 1994-11-09 Nec Corporation Dünnfilmkondensatoren und deren Herstellungsverfahren
JPH03108752A (ja) * 1989-09-22 1991-05-08 Nec Corp 半導体装置
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JPH0555514A (ja) * 1991-08-28 1993-03-05 Hitachi Ltd 半導体装置およびその製造方法
DE69326944T2 (de) * 1992-04-13 2000-03-30 Virginia Tech Intell Prop Stapelelektroden für ferroelektrische vorrichtungen
JP3351856B2 (ja) * 1992-04-20 2002-12-03 テキサス インスツルメンツ インコーポレイテツド 構造体およびコンデンサの製造方法
US5191510A (en) * 1992-04-29 1993-03-02 Ramtron International Corporation Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices
US5254217A (en) * 1992-07-27 1993-10-19 Motorola, Inc. Method for fabricating a semiconductor device having a conductive metal oxide
DE4225920A1 (de) * 1992-08-05 1994-02-10 Roederstein Kondensatoren Kondensator, insbesondere Elektrolytkondensator
US5350705A (en) * 1992-08-25 1994-09-27 National Semiconductor Corporation Ferroelectric memory cell arrangement having a split capacitor plate structure
JPH0783061B2 (ja) * 1993-01-05 1995-09-06 日本電気株式会社 半導体装置
US5478772A (en) * 1993-04-02 1995-12-26 Micron Technology, Inc. Method for forming a storage cell capacitor compatible with high dielectric constant materials
US5381302A (en) * 1993-04-02 1995-01-10 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
US6791131B1 (en) * 1993-04-02 2004-09-14 Micron Technology, Inc. Method for forming a storage cell capacitor compatible with high dielectric constant materials
US5392189A (en) 1993-04-02 1995-02-21 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same
US6531730B2 (en) * 1993-08-10 2003-03-11 Micron Technology, Inc. Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
US6030847A (en) * 1993-04-02 2000-02-29 Micron Technology, Inc. Method for forming a storage cell capacitor compatible with high dielectric constant materials
US5407855A (en) * 1993-06-07 1995-04-18 Motorola, Inc. Process for forming a semiconductor device having a reducing/oxidizing conductive material
JP4554631B2 (ja) * 1994-01-13 2010-09-29 ローム株式会社 誘電体キャパシタおよびその製造方法
US6052271A (en) 1994-01-13 2000-04-18 Rohm Co., Ltd. Ferroelectric capacitor including an iridium oxide layer in the lower electrode
JP3981142B2 (ja) * 1994-01-13 2007-09-26 ローム株式会社 強誘電体キャパシタおよびその製造方法
JP3954390B2 (ja) * 1994-01-13 2007-08-08 ローム株式会社 誘電体キャパシタ
JP3954635B2 (ja) * 1994-01-13 2007-08-08 ローム株式会社 誘電体キャパシタの製造方法
JP3954339B2 (ja) * 1994-01-13 2007-08-08 ローム株式会社 誘電体キャパシタ
US5909043A (en) * 1994-06-02 1999-06-01 Texas Instruments Incorporated Sacrificial oxygen sources to prevent reduction of oxygen containing materials
US5566045A (en) * 1994-08-01 1996-10-15 Texas Instruments, Inc. High-dielectric-constant material electrodes comprising thin platinum layers
US5554564A (en) * 1994-08-01 1996-09-10 Texas Instruments Incorporated Pre-oxidizing high-dielectric-constant material electrodes
US5589284A (en) * 1994-08-01 1996-12-31 Texas Instruments Incorporated Electrodes comprising conductive perovskite-seed layers for perovskite dielectrics
US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
US5489548A (en) * 1994-08-01 1996-02-06 Texas Instruments Incorporated Method of forming high-dielectric-constant material electrodes comprising sidewall spacers
US5622893A (en) * 1994-08-01 1997-04-22 Texas Instruments Incorporated Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
US5585300A (en) * 1994-08-01 1996-12-17 Texas Instruments Incorporated Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes
US5567636A (en) * 1995-02-27 1996-10-22 Motorola Inc. Process for forming a nonvolatile random access memory array
KR100190558B1 (ko) * 1995-03-04 1999-10-15 구본준 강유전체 및 이를 채용한 반도체장치의 커패시터
KR100416733B1 (ko) * 1995-03-20 2004-07-05 삼성전자주식회사 강유전성캐패시터
JP3380373B2 (ja) 1995-06-30 2003-02-24 三菱電機株式会社 半導体記憶装置及びその製造方法
JP3929513B2 (ja) * 1995-07-07 2007-06-13 ローム株式会社 誘電体キャパシタおよびその製造方法
US5739049A (en) * 1995-08-21 1998-04-14 Hyundai Electronics Industries Co., Ltd. Method for fabricating semiconductor device having a capacitor and a method of forming metal wiring on a semiconductor substrate
US5708559A (en) * 1995-10-27 1998-01-13 International Business Machines Corporation Precision analog metal-metal capacitor
US5838605A (en) * 1996-03-20 1998-11-17 Ramtron International Corporation Iridium oxide local interconnect
KR100234361B1 (ko) 1996-06-17 1999-12-15 윤종용 강유전체 캐패시터를 구비하는 반도체 메모리장치 및그제조방법
JP3396131B2 (ja) * 1996-06-28 2003-04-14 三菱電機株式会社 半導体装置およびその製造方法
JPH10209392A (ja) * 1997-01-22 1998-08-07 Sony Corp 半導体メモリセル用キャパシタの電極及び半導体メモリセル用キャパシタ、並びに、それらの作製方法
US5773314A (en) * 1997-04-25 1998-06-30 Motorola, Inc. Plug protection process for use in the manufacture of embedded dynamic random access memory (DRAM) cells
US6063705A (en) * 1998-08-27 2000-05-16 Micron Technology, Inc. Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide
US6541067B1 (en) 1998-08-27 2003-04-01 Micron Technology, Inc. Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide and method of using same
US6517616B2 (en) 1998-08-27 2003-02-11 Micron Technology, Inc. Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide
US6242299B1 (en) 1999-04-01 2001-06-05 Ramtron International Corporation Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode
KR20010097906A (ko) * 2000-04-27 2001-11-08 김효근 오믹 접촉용 금속박막 및 그 제조방법
US6903005B1 (en) 2000-08-30 2005-06-07 Micron Technology, Inc. Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics
US6461909B1 (en) 2000-08-30 2002-10-08 Micron Technology, Inc. Process for fabricating RuSixOy-containing adhesion layers
FR2881567A1 (fr) * 2005-02-01 2006-08-04 Commissariat Energie Atomique Condensateur a champ de claquage eleve
US20080032174A1 (en) * 2005-11-21 2008-02-07 Relion, Inc. Proton exchange membrane fuel cells and electrodes
US7833645B2 (en) * 2005-11-21 2010-11-16 Relion, Inc. Proton exchange membrane fuel cell and method of forming a fuel cell
TW200742851A (en) * 2006-05-09 2007-11-16 Univ Nat Yunlin Sci & Tech Penicillin G biosensors and fabrication method thereof and sensing systems comprising the same
KR101206034B1 (ko) * 2006-05-19 2012-11-28 삼성전자주식회사 산소결핍 금속산화물을 이용한 비휘발성 메모리 소자 및 그제조방법
US8026020B2 (en) 2007-05-08 2011-09-27 Relion, Inc. Proton exchange membrane fuel cell stack and fuel cell stack module
US9293778B2 (en) 2007-06-11 2016-03-22 Emergent Power Inc. Proton exchange membrane fuel cell
US8003274B2 (en) * 2007-10-25 2011-08-23 Relion, Inc. Direct liquid fuel cell
US9092582B2 (en) 2010-07-09 2015-07-28 Cypress Semiconductor Corporation Low power, low pin count interface for an RFID transponder
US9846664B2 (en) 2010-07-09 2017-12-19 Cypress Semiconductor Corporation RFID interface and interrupt
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Also Published As

Publication number Publication date
EP0409018A2 (de) 1991-01-23
JP3055791B2 (ja) 2000-06-26
EP0409018B1 (de) 1996-09-25
AU5900890A (en) 1991-01-17
KR910003760A (ko) 1991-02-28
EP0409018A3 (en) 1991-11-27
CA2021277A1 (en) 1991-01-18
AU626701B2 (en) 1992-08-06
JPH03214717A (ja) 1991-09-19
US4982309A (en) 1991-01-01
DE69028664T2 (de) 1997-04-17
KR0165885B1 (ko) 1999-02-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee