DE69518821T2 - Coulomb-Blockade-Element und Verfahren zur Herstellung - Google Patents

Coulomb-Blockade-Element und Verfahren zur Herstellung

Info

Publication number
DE69518821T2
DE69518821T2 DE69518821T DE69518821T DE69518821T2 DE 69518821 T2 DE69518821 T2 DE 69518821T2 DE 69518821 T DE69518821 T DE 69518821T DE 69518821 T DE69518821 T DE 69518821T DE 69518821 T2 DE69518821 T2 DE 69518821T2
Authority
DE
Germany
Prior art keywords
narrow wire
electrode
layer
silicon
wire section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69518821T
Other languages
German (de)
English (en)
Other versions
DE69518821D1 (de
Inventor
Akira Fujiwara
Masao Nagase
Yasuo Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE69518821D1 publication Critical patent/DE69518821D1/de
Application granted granted Critical
Publication of DE69518821T2 publication Critical patent/DE69518821T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/402—Single electron transistors; Coulomb blockade transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/937—Single electron transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Photovoltaic Devices (AREA)
DE69518821T 1994-10-27 1995-10-24 Coulomb-Blockade-Element und Verfahren zur Herstellung Expired - Lifetime DE69518821T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP26380994 1994-10-27
JP22887295 1995-09-06

Publications (2)

Publication Number Publication Date
DE69518821D1 DE69518821D1 (de) 2000-10-19
DE69518821T2 true DE69518821T2 (de) 2001-04-26

Family

ID=26528504

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69518821T Expired - Lifetime DE69518821T2 (de) 1994-10-27 1995-10-24 Coulomb-Blockade-Element und Verfahren zur Herstellung
DE69531367T Expired - Lifetime DE69531367T2 (de) 1994-10-27 1995-10-24 Coulomb-Blockade-Element und Verfahren zur Herstellung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69531367T Expired - Lifetime DE69531367T2 (de) 1994-10-27 1995-10-24 Coulomb-Blockade-Element und Verfahren zur Herstellung

Country Status (3)

Country Link
US (2) US5604154A (enExample)
EP (2) EP0718894B1 (enExample)
DE (2) DE69518821T2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5754077A (en) * 1995-03-16 1998-05-19 Kabushiki Kaisha Toshiba Semiconductor integrated circuit having plural functional blocks, wherein one of the blocks comprises a small tunnel junction device and another block comprises a FET
US5838021A (en) * 1995-12-26 1998-11-17 Ancona; Mario G. Single electron digital circuits
JPH09312378A (ja) * 1996-03-19 1997-12-02 Fujitsu Ltd 半導体装置及びその製造方法
US5897366A (en) * 1997-03-10 1999-04-27 Motorola, Inc. Method of resistless gate metal etch for fets
US5945686A (en) * 1997-04-28 1999-08-31 Hitachi, Ltd. Tunneling electronic device
US6198113B1 (en) 1999-04-22 2001-03-06 Acorn Technologies, Inc. Electrostatically operated tunneling transistor
KR100340929B1 (ko) * 1999-11-25 2002-06-20 오길록 금속 초박막을 이용한 단전자 트랜지스터
US7615402B1 (en) 2000-07-07 2009-11-10 Acorn Technologies, Inc. Electrostatically operated tunneling transistor
EP1229590A1 (en) * 2001-01-31 2002-08-07 Japan Science and Technology Corporation Correlated charge transfer device and a method of fabricating a correlated charge transfer device
FR2830686B1 (fr) * 2001-10-04 2004-10-22 Commissariat Energie Atomique Transistor a un electron et a canal vertical, et procedes de realisation d'un tel transistor
AU2003215840A1 (en) * 2002-03-28 2003-10-13 Koninklijke Philips Electronics N.V. Nanowire and electronic device
TWI227516B (en) * 2003-12-26 2005-02-01 Ind Tech Res Inst Nano-electronic devices using discrete exposure method
JP4249684B2 (ja) * 2004-10-06 2009-04-02 株式会社東芝 半導体記憶装置
CN100409454C (zh) * 2005-10-20 2008-08-06 中国科学院半导体研究所 通过注氧进行量子限制的硅基单电子晶体管
KR20100072610A (ko) * 2008-12-22 2010-07-01 한국전자통신연구원 반도체 장치 및 그 제조 방법
JP5604862B2 (ja) * 2009-01-09 2014-10-15 ソニー株式会社 流路デバイス、複素誘電率測定装置及び誘電サイトメトリー装置
WO2018063269A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Single electron transistors (sets) and set-based qubit-detector arrangements
FR3057105B1 (fr) * 2016-10-05 2026-06-12 Commissariat Energie Atomique Dispositif a boite(s) quantique(s) comportant des dopants localises dans une couche semi-conductrice mince

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401980A (en) * 1991-09-04 1995-03-28 International Business Machines Corporation 2D/1D junction device as a Coulomb blockade gate
JPH0590567A (ja) * 1991-09-25 1993-04-09 Hitachi Ltd 一電子トンネルトランジスタ回路およびその製造方法
JP3156307B2 (ja) * 1991-10-15 2001-04-16 株式会社日立製作所 一電子トンネルトランジスタ及びその集積回路
GB9226382D0 (en) * 1992-12-18 1993-02-10 Hitachi Europ Ltd Memory device

Also Published As

Publication number Publication date
DE69531367D1 (de) 2003-08-28
DE69531367T2 (de) 2004-04-15
US5604154A (en) 1997-02-18
EP0718894B1 (en) 2000-09-13
EP1028472A3 (en) 2000-08-30
EP0718894A3 (enExample) 1996-07-31
US5665979A (en) 1997-09-09
EP1028472A2 (en) 2000-08-16
DE69518821D1 (de) 2000-10-19
EP0718894A2 (en) 1996-06-26
EP1028472B1 (en) 2003-07-23

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