DE69504495T2 - Spannungsdurchbruchfeste halbleiterbauelemente aus einkristall-siliziumkarbid und verfahren zu deren herstellung - Google Patents

Spannungsdurchbruchfeste halbleiterbauelemente aus einkristall-siliziumkarbid und verfahren zu deren herstellung

Info

Publication number
DE69504495T2
DE69504495T2 DE69504495T DE69504495T DE69504495T2 DE 69504495 T2 DE69504495 T2 DE 69504495T2 DE 69504495 T DE69504495 T DE 69504495T DE 69504495 T DE69504495 T DE 69504495T DE 69504495 T2 DE69504495 T2 DE 69504495T2
Authority
DE
Germany
Prior art keywords
silicon carbide
termination region
crystal
production
semiconductor components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69504495T
Other languages
English (en)
Other versions
DE69504495D1 (de
Inventor
Bantval Baliga
Dev Alok
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North Carolina State University
University of California
Original Assignee
North Carolina State University
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North Carolina State University, University of California filed Critical North Carolina State University
Application granted granted Critical
Publication of DE69504495D1 publication Critical patent/DE69504495D1/de
Publication of DE69504495T2 publication Critical patent/DE69504495T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69504495T 1994-05-04 1995-05-02 Spannungsdurchbruchfeste halbleiterbauelemente aus einkristall-siliziumkarbid und verfahren zu deren herstellung Expired - Lifetime DE69504495T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/238,228 US5449925A (en) 1994-05-04 1994-05-04 Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
PCT/US1995/005398 WO1995031009A1 (en) 1994-05-04 1995-05-02 Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices, and methods of fabricating same

Publications (2)

Publication Number Publication Date
DE69504495D1 DE69504495D1 (de) 1998-10-08
DE69504495T2 true DE69504495T2 (de) 1999-04-15

Family

ID=22896999

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69504495T Expired - Lifetime DE69504495T2 (de) 1994-05-04 1995-05-02 Spannungsdurchbruchfeste halbleiterbauelemente aus einkristall-siliziumkarbid und verfahren zu deren herstellung

Country Status (7)

Country Link
US (2) US5449925A (de)
EP (1) EP0758489B1 (de)
JP (1) JP3732857B2 (de)
AT (1) ATE170668T1 (de)
AU (1) AU2431395A (de)
DE (1) DE69504495T2 (de)
WO (1) WO1995031009A1 (de)

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US5543637A (en) * 1994-11-14 1996-08-06 North Carolina State University Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein
SE9500013D0 (sv) * 1995-01-03 1995-01-03 Abb Research Ltd Semiconductor device having a passivation layer
SE504916C2 (sv) * 1995-01-18 1997-05-26 Ericsson Telefon Ab L M Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt
SE9500146D0 (sv) * 1995-01-18 1995-01-18 Abb Research Ltd Halvledarkomponent i kiselkarbid
US5967795A (en) * 1995-08-30 1999-10-19 Asea Brown Boveri Ab SiC semiconductor device comprising a pn junction with a voltage absorbing edge
US5929523A (en) * 1996-03-07 1999-07-27 3C Semiconductor Corporation Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC
US6388272B1 (en) * 1996-03-07 2002-05-14 Caldus Semiconductor, Inc. W/WC/TAC ohmic and rectifying contacts on SiC
SE9602745D0 (sv) * 1996-07-11 1996-07-11 Abb Research Ltd A method for producing a channel region layer in a SiC-layer for a voltage controlled semiconductor device
KR100232206B1 (ko) * 1996-12-26 1999-12-01 김영환 반도체 소자의 제조방법
US6011279A (en) * 1997-04-30 2000-01-04 Cree Research, Inc. Silicon carbide field controlled bipolar switch
US5962986A (en) * 1997-05-19 1999-10-05 Northrop Grumman Corporation Solid state RF light driver for electrodeless lighting
DE19756873A1 (de) * 1997-12-19 1999-07-01 Siemens Ag Elektrische Schaltungsanordnung zur Transformation von magnetischer Feldenergie in elektrische Feldenergie
US6229193B1 (en) * 1998-04-06 2001-05-08 California Institute Of Technology Multiple stage high power diode
US6023078A (en) * 1998-04-28 2000-02-08 North Carolina State University Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability
US6168961B1 (en) * 1998-05-21 2001-01-02 Memc Electronic Materials, Inc. Process for the preparation of epitaxial wafers for resistivity measurements
US6027954A (en) * 1998-05-29 2000-02-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Gas sensing diode and method of manufacturing
DE19925233A1 (de) * 1998-06-08 1999-12-09 Siemens Ag Halbleiteranordnung mit ohmscher Kontaktierung und Verfahren zur Kontaktierung einer Halbleiteranordnung
US6281521B1 (en) 1998-07-09 2001-08-28 Cree Research Inc. Silicon carbide horizontal channel buffered gate semiconductor devices
JP3955396B2 (ja) 1998-09-17 2007-08-08 株式会社ルネサステクノロジ 半導体サージ吸収素子
US6373076B1 (en) 1999-12-07 2002-04-16 Philips Electronics North America Corporation Passivated silicon carbide devices with low leakage current and method of fabricating
US6407014B1 (en) 1999-12-16 2002-06-18 Philips Electronics North America Corporation Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices
US6303508B1 (en) 1999-12-16 2001-10-16 Philips Electronics North America Corporation Superior silicon carbide integrated circuits and method of fabricating
FR2803103B1 (fr) * 1999-12-24 2003-08-29 St Microelectronics Sa Diode schottky sur substrat de carbure de silicium
US6797586B2 (en) * 2001-06-28 2004-09-28 Koninklijke Philips Electronics N.V. Silicon carbide schottky barrier diode and method of making
US6552363B2 (en) 2001-09-18 2003-04-22 International Rectifier Corporation Polysilicon FET built on silicon carbide diode substrate
US6955978B1 (en) * 2001-12-20 2005-10-18 Fairchild Semiconductor Corporation Uniform contact
US7262434B2 (en) 2002-03-28 2007-08-28 Rohm Co., Ltd. Semiconductor device with a silicon carbide substrate and ohmic metal layer
FR2844099B1 (fr) * 2002-09-03 2005-09-02 Commissariat Energie Atomique Dispositif semiconducteur de puissance quasi-vertical sur substrat composite
CN1802755B (zh) * 2003-05-09 2012-05-16 克里公司 通过离子注入进行隔离的led制造方法
US20050194584A1 (en) * 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
US7229866B2 (en) * 2004-03-15 2007-06-12 Velox Semiconductor Corporation Non-activated guard ring for semiconductor devices
US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation
JP4889645B2 (ja) * 2005-09-08 2012-03-07 三菱電機株式会社 半導体装置の製造方法
AU2006342150A1 (en) * 2005-10-24 2007-10-25 Lawrence Livermore National Security, Llc. Optically- initiated silicon carbide high voltage switch
US8258632B1 (en) 2005-10-24 2012-09-04 Lawrence Livermore National Security, Llc Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces
JP5044117B2 (ja) * 2005-12-14 2012-10-10 関西電力株式会社 炭化珪素バイポーラ型半導体装置
US7446374B2 (en) * 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7274083B1 (en) * 2006-05-02 2007-09-25 Semisouth Laboratories, Inc. Semiconductor device with surge current protection and method of making the same
US8269262B2 (en) * 2006-05-02 2012-09-18 Ss Sc Ip Llc Vertical junction field effect transistor with mesa termination and method of making the same
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
JP5078314B2 (ja) * 2006-10-18 2012-11-21 ローム株式会社 ショットキーバリアダイオードおよびその製造方法
US7662698B2 (en) * 2006-11-07 2010-02-16 Raytheon Company Transistor having field plate
US9337268B2 (en) * 2011-05-16 2016-05-10 Cree, Inc. SiC devices with high blocking voltage terminated by a negative bevel
KR20130049919A (ko) * 2011-11-07 2013-05-15 현대자동차주식회사 실리콘카바이드 쇼트키 배리어 다이오드 소자 및 이의 제조 방법
KR101427948B1 (ko) * 2012-12-18 2014-08-08 현대자동차 주식회사 쇼트키 배리어 다이오드 및 그 제조 방법
JP2014146748A (ja) * 2013-01-30 2014-08-14 Toshiba Corp 半導体装置及びその製造方法並びに半導体基板
US9257327B2 (en) 2013-04-09 2016-02-09 Samsung Electronics Co., Ltd. Methods of forming a Field Effect Transistor, including forming a region providing enhanced oxidation
US9425265B2 (en) 2013-08-16 2016-08-23 Cree, Inc. Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure
US10608079B2 (en) * 2018-02-06 2020-03-31 General Electric Company High energy ion implantation for junction isolation in silicon carbide devices
CN110265486B (zh) * 2019-06-20 2023-03-24 中国电子科技集团公司第十三研究所 氧化镓sbd终端结构及制备方法

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JPH0383332A (ja) * 1989-08-28 1991-04-09 Sharp Corp 炭化珪素半導体装置の製造方法
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US5270244A (en) * 1993-01-25 1993-12-14 North Carolina State University At Raleigh Method for forming an oxide-filled trench in silicon carbide
US5399883A (en) * 1994-05-04 1995-03-21 North Carolina State University At Raleigh High voltage silicon carbide MESFETs and methods of fabricating same

Also Published As

Publication number Publication date
AU2431395A (en) 1995-11-29
EP0758489A1 (de) 1997-02-19
ATE170668T1 (de) 1998-09-15
US5635412A (en) 1997-06-03
US5449925A (en) 1995-09-12
WO1995031009A1 (en) 1995-11-16
DE69504495D1 (de) 1998-10-08
JPH10501097A (ja) 1998-01-27
EP0758489B1 (de) 1998-09-02
JP3732857B2 (ja) 2006-01-11

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Legal Events

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Representative=s name: MOSELPATENT TRIERPATENT, 54290 TRIER

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE SERWE & DR. WAGNER, 54290 TRIER

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