DE69426343T2 - Abfühlverstärker - Google Patents

Abfühlverstärker

Info

Publication number
DE69426343T2
DE69426343T2 DE69426343T DE69426343T DE69426343T2 DE 69426343 T2 DE69426343 T2 DE 69426343T2 DE 69426343 T DE69426343 T DE 69426343T DE 69426343 T DE69426343 T DE 69426343T DE 69426343 T2 DE69426343 T2 DE 69426343T2
Authority
DE
Germany
Prior art keywords
sensing amplifier
amplifier
sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69426343T
Other languages
English (en)
Other versions
DE69426343D1 (de
Inventor
Junichi Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69426343D1 publication Critical patent/DE69426343D1/de
Application granted granted Critical
Publication of DE69426343T2 publication Critical patent/DE69426343T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
DE69426343T 1993-09-16 1994-09-15 Abfühlverstärker Expired - Lifetime DE69426343T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP22990493 1993-09-16
JP6216264A JP3004177B2 (ja) 1993-09-16 1994-09-09 半導体集積回路装置

Publications (2)

Publication Number Publication Date
DE69426343D1 DE69426343D1 (de) 2001-01-04
DE69426343T2 true DE69426343T2 (de) 2001-04-26

Family

ID=26521333

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69426343T Expired - Lifetime DE69426343T2 (de) 1993-09-16 1994-09-15 Abfühlverstärker

Country Status (4)

Country Link
US (3) US5528542A (de)
EP (1) EP0644551B1 (de)
JP (1) JP3004177B2 (de)
DE (1) DE69426343T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3004177B2 (ja) * 1993-09-16 2000-01-31 株式会社東芝 半導体集積回路装置
JP3028913B2 (ja) * 1994-11-10 2000-04-04 株式会社東芝 半導体記憶装置
KR100224769B1 (ko) * 1995-12-29 1999-10-15 김영환 고속 버스트 리드/라이트 동작에 적합한 데이타 버스 라인 구조를 갖는 반도체 메모리 장치
JP3277192B2 (ja) * 1996-12-27 2002-04-22 富士通株式会社 半導体装置
JPH10242419A (ja) * 1997-02-27 1998-09-11 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
JP4005663B2 (ja) * 1997-05-09 2007-11-07 株式会社東芝 半導体記憶装置
US5982673A (en) * 1997-09-30 1999-11-09 Siemens Aktiengesellschaft Secondary sense amplifier with window discriminator for self-timed operation
US6004861A (en) * 1997-12-19 1999-12-21 Advanced Micro Devices Process for making a discontinuous source/drain formation for a high density integrated circuit
DE19822750A1 (de) * 1998-05-20 1999-11-25 Siemens Ag Halbleiterspeicher mit differentiellen Bitleitungen
US6207498B1 (en) 1998-06-05 2001-03-27 United Integrated Circuits Corp. Method of fabricating a coronary-type capacitor in an integrated circuit
US6288419B1 (en) * 1999-07-09 2001-09-11 Micron Technology, Inc. Low resistance gate flash memory
KR100313151B1 (ko) * 1999-12-30 2001-11-07 박종섭 컬럼 트랜지스터의 레이아웃방법
US6339541B1 (en) * 2000-06-16 2002-01-15 United Memories, Inc. Architecture for high speed memory circuit having a relatively large number of internal data lines
US7184290B1 (en) * 2000-06-28 2007-02-27 Marvell International Ltd. Logic process DRAM
JP3433741B2 (ja) * 2000-09-05 2003-08-04 セイコーエプソン株式会社 半導体装置
DE10150498C2 (de) * 2001-10-12 2003-08-07 Infineon Technologies Ag Halbleiterspeichervorrichtung
DE10155023B4 (de) * 2001-11-05 2008-11-06 Qimonda Ag Leitungsanordnung für Bitleitungen zur Kontaktierung mindestens einer Speicherzelle und Verfahren zur Herstellung einer Leitungsanordnung für Bitleitungen
JP2005322380A (ja) 2004-04-09 2005-11-17 Toshiba Corp 半導体記憶装置
US7511333B2 (en) * 2005-10-06 2009-03-31 Promos Technologies Inc. Nonvolatile memory cell with multiple floating gates and a connection region in the channel
US8718541B2 (en) 2007-12-31 2014-05-06 Intel Corporation Techniques for optimal location and configuration of infrastructure relay nodes in wireless networks
JP4492736B2 (ja) 2008-06-12 2010-06-30 ソニー株式会社 半導体集積回路
JP5736224B2 (ja) 2011-04-12 2015-06-17 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP6151504B2 (ja) * 2012-10-17 2017-06-21 ルネサスエレクトロニクス株式会社 半導体記憶装置
US11211384B2 (en) 2017-01-12 2021-12-28 Micron Technology, Inc. Memory cells, arrays of two transistor-one capacitor memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
JP6378391B2 (ja) * 2017-04-12 2018-08-22 ルネサスエレクトロニクス株式会社 半導体記憶装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0642537B2 (ja) * 1985-11-15 1994-06-01 株式会社東芝 半導体装置
US4949306A (en) * 1987-06-19 1990-08-14 Hitachi, Ltd. Sense circuit and semiconductor memory having a current-voltage converter circuit
DE69028625T2 (de) * 1990-06-12 1997-01-30 Fujitsu Ltd Dynamische Speichereinrichtung mit wahlfreiem Zugriff
JPH04114395A (ja) * 1990-09-05 1992-04-15 Nec Corp 半導体記憶回路
JP3049102B2 (ja) * 1991-03-15 2000-06-05 富士通株式会社 ダイナミックｒａｍ
JP3267699B2 (ja) * 1991-11-05 2002-03-18 富士通株式会社 半導体記憶装置
JP2687829B2 (ja) * 1992-12-21 1997-12-08 松下電器産業株式会社 メモリ及びメモリ作成方式
JP3004177B2 (ja) * 1993-09-16 2000-01-31 株式会社東芝 半導体集積回路装置
AT403708B (de) * 1994-09-15 1998-05-25 Plasser Bahnbaumasch Franz Gleisbaumaschine

Also Published As

Publication number Publication date
US5666319A (en) 1997-09-09
EP0644551B1 (de) 2000-11-29
JP3004177B2 (ja) 2000-01-31
US5528542A (en) 1996-06-18
DE69426343D1 (de) 2001-01-04
EP0644551A3 (de) 1996-02-28
US5929492A (en) 1999-07-27
JPH07135257A (ja) 1995-05-23
EP0644551A2 (de) 1995-03-22

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Legal Events

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