DE69425999D1 - Photodetektor mit einem mehrschichtigen Filter und Herstellungsverfahren - Google Patents
Photodetektor mit einem mehrschichtigen Filter und HerstellungsverfahrenInfo
- Publication number
- DE69425999D1 DE69425999D1 DE69425999T DE69425999T DE69425999D1 DE 69425999 D1 DE69425999 D1 DE 69425999D1 DE 69425999 T DE69425999 T DE 69425999T DE 69425999 T DE69425999 T DE 69425999T DE 69425999 D1 DE69425999 D1 DE 69425999D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- layer filter
- filter photodetector
- photodetector
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16352293A JP3242495B2 (ja) | 1993-07-01 | 1993-07-01 | 多層膜フィルタ付き受光素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69425999D1 true DE69425999D1 (de) | 2000-11-02 |
DE69425999T2 DE69425999T2 (de) | 2001-03-01 |
Family
ID=15775474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69425999T Expired - Fee Related DE69425999T2 (de) | 1993-07-01 | 1994-07-01 | Photodetektor mit einem mehrschichtigen Filter und Herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (1) | US5644124A (de) |
EP (1) | EP0632508B1 (de) |
JP (1) | JP3242495B2 (de) |
DE (1) | DE69425999T2 (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1125358C (zh) | 1995-08-03 | 2003-10-22 | 松下电器产业株式会社 | 光学装置及光纤组件 |
US5835741A (en) * | 1996-12-31 | 1998-11-10 | Compaq Computer Corporation | Bus-to-bus bridge in computer system, with fast burst memory range |
DE19746089A1 (de) * | 1997-10-20 | 1999-04-29 | Forschungszentrum Juelich Gmbh | Eine Filterstruktur aufweisendes Bauelement |
IT1313260B1 (it) * | 1999-07-28 | 2002-07-17 | St Microelectronics Srl | Dispositivo fotosensore integrato su semiconduttore e relativoprocesso di fabbricazione. |
JP2001351266A (ja) * | 2000-04-06 | 2001-12-21 | Fujitsu Ltd | 光ピックアップ及び光記憶装置 |
US6686431B2 (en) | 2000-11-01 | 2004-02-03 | Avery Dennison Corporation | Optical coating having low refractive index |
JP2002151729A (ja) * | 2000-11-13 | 2002-05-24 | Sony Corp | 半導体装置及びその製造方法 |
DE10118231A1 (de) * | 2001-04-11 | 2002-10-17 | Heidenhain Gmbh Dr Johannes | Optoelektronische Baulelmentanordnung und Verfahren zur Herstellun einer oploelektronischen Bauelementanordnung |
DE10214769A1 (de) * | 2002-04-03 | 2003-10-16 | Bosch Gmbh Robert | Vorrichtung und Sensor zur Aufnahme von Lichtsignalen sowie Herstellungsverfahren |
JP4154165B2 (ja) * | 2002-04-05 | 2008-09-24 | キヤノン株式会社 | 光電変換素子及びそれを用いた固体撮像装置、カメラ及び画像読み取り装置 |
US7095009B2 (en) * | 2002-05-21 | 2006-08-22 | 3M Innovative Properties Company | Photopic detector system and filter therefor |
JP2004354735A (ja) * | 2003-05-29 | 2004-12-16 | Daishinku Corp | 光線カットフィルタ |
FR2860644B1 (fr) * | 2003-10-06 | 2006-03-03 | St Microelectronics Sa | Composant, plaque et boitier semi-conducteur a capteur optique |
JP4643202B2 (ja) * | 2004-08-20 | 2011-03-02 | 日本電波工業株式会社 | 光学ローパスフィルタ |
JP5010244B2 (ja) * | 2005-12-15 | 2012-08-29 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
US7312434B1 (en) * | 2006-12-26 | 2007-12-25 | Eaton Corporation | Method of filtering spectral energy |
US20080180665A1 (en) * | 2007-01-31 | 2008-07-31 | Redman David J | Measuring color spectra using color filter arrays |
JP5301108B2 (ja) | 2007-04-20 | 2013-09-25 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
US20080266563A1 (en) * | 2007-04-26 | 2008-10-30 | Redman David J | Measuring color using color filter arrays |
JP4891841B2 (ja) * | 2007-06-08 | 2012-03-07 | 浜松ホトニクス株式会社 | 分光モジュール |
JP5094742B2 (ja) * | 2007-06-08 | 2012-12-12 | 浜松ホトニクス株式会社 | 分光器 |
JP4988524B2 (ja) * | 2007-11-22 | 2012-08-01 | パナソニック株式会社 | 発光ダイオード照明器具 |
US8445299B2 (en) * | 2007-12-12 | 2013-05-21 | Newport Corporation | Performance optically coated semiconductor devices and related methods of manufacture |
JP2010103378A (ja) * | 2008-10-24 | 2010-05-06 | Omron Corp | 光センサ |
US20100163759A1 (en) * | 2008-12-31 | 2010-07-01 | Stmicroelectronics S.R.L. | Radiation sensor with photodiodes being integrated on a semiconductor substrate and corresponding integration process |
IT1392502B1 (it) * | 2008-12-31 | 2012-03-09 | St Microelectronics Srl | Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione |
CN202177716U (zh) * | 2011-07-22 | 2012-03-28 | 浙江水晶光电科技股份有限公司 | 高像素影像系统用滤光片 |
JP6476873B2 (ja) * | 2015-01-13 | 2019-03-06 | セイコーエプソン株式会社 | 光検出装置、光検出モジュール及び電子機器 |
JP2016170114A (ja) * | 2015-03-13 | 2016-09-23 | 株式会社東芝 | 距離測定装置及び光検出器 |
DE102018130510A1 (de) * | 2018-11-30 | 2020-06-04 | Vishay Semiconductor Gmbh | Strahlungssensor und Herstellungsverfahren hierfür |
JP7410782B2 (ja) * | 2020-04-03 | 2024-01-10 | 京セラ株式会社 | 電磁波検出装置および検出モジュール |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5068787A (de) * | 1973-10-22 | 1975-06-09 | ||
US3996461A (en) * | 1975-03-31 | 1976-12-07 | Texas Instruments Incorporated | Silicon photosensor with optical thin film filter |
JPS60185901A (ja) * | 1983-10-31 | 1985-09-21 | Toppan Printing Co Ltd | 固体撮像素子用色分解フイルタ− |
JPS60134203A (ja) * | 1983-12-23 | 1985-07-17 | Dainippon Printing Co Ltd | 色分離フイルタ |
JPS6281605A (ja) * | 1985-10-07 | 1987-04-15 | Nippon Shinku Kogaku Kk | 誘電体多層膜光学フイルタおよびその製造方法 |
US4827118A (en) * | 1986-07-10 | 1989-05-02 | Minolta Camera Kabushiki Kaisha | Light-sensitive device having color filter and manufacturing method thereof |
JPS63144306A (ja) * | 1986-12-08 | 1988-06-16 | Toshiba Corp | 誘電体多層膜及びその製造方法 |
JPH01188806A (ja) * | 1988-01-22 | 1989-07-28 | Nippon Telegr & Teleph Corp <Ntt> | 多層膜フィルタ付き受光器およびその製造方法 |
JPH0642582B2 (ja) * | 1988-06-27 | 1994-06-01 | シャープ株式会社 | 誘電体多層被覆膜 |
US4925259A (en) * | 1988-10-20 | 1990-05-15 | The United States Of America As Represented By The United States Department Of Energy | Multilayer optical dielectric coating |
JPH02170575A (ja) * | 1988-12-23 | 1990-07-02 | Nec Corp | イメージセンサ |
US5144498A (en) * | 1990-02-14 | 1992-09-01 | Hewlett-Packard Company | Variable wavelength light filter and sensor system |
US5272332A (en) * | 1990-04-11 | 1993-12-21 | American Optical Corporation | Laser discrimination device |
JPH04129269A (ja) * | 1990-09-20 | 1992-04-30 | Nec Kyushu Ltd | 固体撮像素子 |
JPH04179278A (ja) * | 1990-11-13 | 1992-06-25 | Sumitomo Electric Ind Ltd | 受光素子 |
JP2958204B2 (ja) * | 1992-06-29 | 1999-10-06 | シャープ株式会社 | 受光素子 |
-
1993
- 1993-07-01 JP JP16352293A patent/JP3242495B2/ja not_active Expired - Fee Related
-
1994
- 1994-07-01 EP EP94304833A patent/EP0632508B1/de not_active Expired - Lifetime
- 1994-07-01 DE DE69425999T patent/DE69425999T2/de not_active Expired - Fee Related
-
1996
- 1996-05-01 US US08/646,729 patent/US5644124A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69425999T2 (de) | 2001-03-01 |
JPH0722630A (ja) | 1995-01-24 |
US5644124A (en) | 1997-07-01 |
EP0632508A3 (de) | 1995-04-12 |
EP0632508A2 (de) | 1995-01-04 |
JP3242495B2 (ja) | 2001-12-25 |
EP0632508B1 (de) | 2000-09-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |