DE69405342D1 - Poliervorrichtung für Halbleiterscheibe - Google Patents

Poliervorrichtung für Halbleiterscheibe

Info

Publication number
DE69405342D1
DE69405342D1 DE69405342T DE69405342T DE69405342D1 DE 69405342 D1 DE69405342 D1 DE 69405342D1 DE 69405342 T DE69405342 T DE 69405342T DE 69405342 T DE69405342 T DE 69405342T DE 69405342 D1 DE69405342 D1 DE 69405342D1
Authority
DE
Germany
Prior art keywords
semiconductor wafers
polishing device
polishing
wafers
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69405342T
Other languages
English (en)
Other versions
DE69405342T2 (de
Inventor
Hiroyuki Ohashi
Naoto Miyashita
Ichiro Katakabe
Tetsuya Tsukihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69405342D1 publication Critical patent/DE69405342D1/de
Publication of DE69405342T2 publication Critical patent/DE69405342T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/14Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE69405342T 1993-10-28 1994-10-28 Poliervorrichtung für Halbleiterscheibe Expired - Fee Related DE69405342T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27065493A JP3311116B2 (ja) 1993-10-28 1993-10-28 半導体製造装置

Publications (2)

Publication Number Publication Date
DE69405342D1 true DE69405342D1 (de) 1997-10-09
DE69405342T2 DE69405342T2 (de) 1998-01-29

Family

ID=17489104

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69405342T Expired - Fee Related DE69405342T2 (de) 1993-10-28 1994-10-28 Poliervorrichtung für Halbleiterscheibe

Country Status (5)

Country Link
US (1) US5605488A (de)
EP (1) EP0650806B1 (de)
JP (1) JP3311116B2 (de)
KR (1) KR0147451B1 (de)
DE (1) DE69405342T2 (de)

Families Citing this family (121)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5700180A (en) 1993-08-25 1997-12-23 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing
US5820448A (en) * 1993-12-27 1998-10-13 Applied Materials, Inc. Carrier head with a layer of conformable material for a chemical mechanical polishing system
US5643053A (en) * 1993-12-27 1997-07-01 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved polishing control
TW348279B (en) * 1995-04-10 1998-12-21 Matsushita Electric Ind Co Ltd Substrate grinding method
US6024630A (en) 1995-06-09 2000-02-15 Applied Materials, Inc. Fluid-pressure regulated wafer polishing head
JPH09225819A (ja) * 1996-02-21 1997-09-02 Shin Etsu Handotai Co Ltd 被加工物の保持機構
USRE38854E1 (en) 1996-02-27 2005-10-25 Ebara Corporation Apparatus for and method for polishing workpiece
US5762539A (en) 1996-02-27 1998-06-09 Ebara Corporation Apparatus for and method for polishing workpiece
US6183354B1 (en) * 1996-11-08 2001-02-06 Applied Materials, Inc. Carrier head with a flexible membrane for a chemical mechanical polishing system
US6146259A (en) 1996-11-08 2000-11-14 Applied Materials, Inc. Carrier head with local pressure control for a chemical mechanical polishing apparatus
US5941758A (en) * 1996-11-13 1999-08-24 Intel Corporation Method and apparatus for chemical-mechanical polishing
JP3011113B2 (ja) * 1996-11-15 2000-02-21 日本電気株式会社 基板の研磨方法及び研磨装置
DE19651761A1 (de) * 1996-12-12 1998-06-18 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Polieren von Halbleiterscheiben
US6056632A (en) * 1997-02-13 2000-05-02 Speedfam-Ipec Corp. Semiconductor wafer polishing apparatus with a variable polishing force wafer carrier head
US5967881A (en) * 1997-05-29 1999-10-19 Tucker; Thomas N. Chemical mechanical planarization tool having a linear polishing roller
US5873769A (en) * 1997-05-30 1999-02-23 Industrial Technology Research Institute Temperature compensated chemical mechanical polishing to achieve uniform removal rates
JP3027551B2 (ja) * 1997-07-03 2000-04-04 キヤノン株式会社 基板保持装置ならびに該基板保持装置を用いた研磨方法および研磨装置
US5964653A (en) * 1997-07-11 1999-10-12 Applied Materials, Inc. Carrier head with a flexible membrane for a chemical mechanical polishing system
JP3741523B2 (ja) * 1997-07-30 2006-02-01 株式会社荏原製作所 研磨装置
JP3982890B2 (ja) * 1997-08-06 2007-09-26 富士通株式会社 研磨装置、この装置に用いられる研磨治具、及び、この研磨治具に取り付けられる被研磨物取付部材
US5931719A (en) * 1997-08-25 1999-08-03 Lsi Logic Corporation Method and apparatus for using pressure differentials through a polishing pad to improve performance in chemical mechanical polishing
US5975998A (en) * 1997-09-26 1999-11-02 Memc Electronic Materials , Inc. Wafer processing apparatus
US5957750A (en) * 1997-12-18 1999-09-28 Micron Technology, Inc. Method and apparatus for controlling a temperature of a polishing pad used in planarizing substrates
US6121144A (en) * 1997-12-29 2000-09-19 Intel Corporation Low temperature chemical mechanical polishing of dielectric materials
US6080050A (en) * 1997-12-31 2000-06-27 Applied Materials, Inc. Carrier head including a flexible membrane and a compliant backing member for a chemical mechanical polishing apparatus
US6142857A (en) * 1998-01-06 2000-11-07 Speedfam-Ipec Corporation Wafer polishing with improved backing arrangement
JP3467184B2 (ja) * 1998-02-05 2003-11-17 信越半導体株式会社 ワークの研磨方法
US6020262A (en) * 1998-03-06 2000-02-01 Siemens Aktiengesellschaft Methods and apparatus for chemical mechanical planarization (CMP) of a semiconductor wafer
US5985094A (en) * 1998-05-12 1999-11-16 Speedfam-Ipec Corporation Semiconductor wafer carrier
US6106379A (en) * 1998-05-12 2000-08-22 Speedfam-Ipec Corporation Semiconductor wafer carrier with automatic ring extension
US6251215B1 (en) 1998-06-03 2001-06-26 Applied Materials, Inc. Carrier head with a multilayer retaining ring for chemical mechanical polishing
JP2000015570A (ja) * 1998-07-02 2000-01-18 Disco Abrasive Syst Ltd 研削装置
JP2000084836A (ja) * 1998-09-08 2000-03-28 Speedfam-Ipec Co Ltd キャリア及び研磨装置
US6244942B1 (en) * 1998-10-09 2001-06-12 Applied Materials, Inc. Carrier head with a flexible membrane and adjustable edge pressure
US6132298A (en) * 1998-11-25 2000-10-17 Applied Materials, Inc. Carrier head with edge control for chemical mechanical polishing
US6093089A (en) * 1999-01-25 2000-07-25 United Microelectronics Corp. Apparatus for controlling uniformity of polished material
US6231428B1 (en) * 1999-03-03 2001-05-15 Mitsubishi Materials Corporation Chemical mechanical polishing head assembly having floating wafer carrier and retaining ring
JP2000326235A (ja) * 1999-05-17 2000-11-28 Inst Of Physical & Chemical Res Elid用砥石とこれを用いたelid平面研削装置
US6077151A (en) * 1999-05-17 2000-06-20 Vlsi Technology, Inc. Temperature control carrier head for chemical mechanical polishing process
US6358121B1 (en) * 1999-07-09 2002-03-19 Applied Materials, Inc. Carrier head with a flexible membrane and an edge load ring
JP3270428B2 (ja) 1999-07-28 2002-04-02 東芝機械株式会社 電動式射出成形機の旋回装置
DE19941903A1 (de) * 1999-09-02 2001-03-15 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Polieren einer Halbleiterscheibe
JP2001121411A (ja) 1999-10-29 2001-05-08 Applied Materials Inc ウェハー研磨装置
US6227939B1 (en) * 2000-01-25 2001-05-08 Agilent Technologies, Inc. Temperature controlled chemical mechanical polishing method and apparatus
US6629881B1 (en) 2000-02-17 2003-10-07 Applied Materials, Inc. Method and apparatus for controlling slurry delivery during polishing
DE10009656B4 (de) * 2000-02-24 2005-12-08 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE10012840C2 (de) * 2000-03-16 2001-08-02 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Vielzahl von polierten Halbleiterscheiben
KR100780099B1 (ko) * 2000-03-29 2007-11-29 신에쯔 한도타이 가부시키가이샤 연마용 워크지지반, 연마장치 및 연마방법
US6447379B1 (en) 2000-03-31 2002-09-10 Speedfam-Ipec Corporation Carrier including a multi-volume diaphragm for polishing a semiconductor wafer and a method therefor
US6390905B1 (en) 2000-03-31 2002-05-21 Speedfam-Ipec Corporation Workpiece carrier with adjustable pressure zones and barriers
US6336853B1 (en) 2000-03-31 2002-01-08 Speedfam-Ipec Corporation Carrier having pistons for distributing a pressing force on the back surface of a workpiece
US7140956B1 (en) 2000-03-31 2006-11-28 Speedfam-Ipec Corporation Work piece carrier with adjustable pressure zones and barriers and a method of planarizing a work piece
US6506105B1 (en) 2000-05-12 2003-01-14 Multi-Planar Technologies, Inc. System and method for pneumatic diaphragm CMP head having separate retaining ring and multi-region wafer pressure control
US6558232B1 (en) 2000-05-12 2003-05-06 Multi-Planar Technologies, Inc. System and method for CMP having multi-pressure zone loading for improved edge and annular zone material removal control
JP2003533359A (ja) * 2000-05-12 2003-11-11 マルチプレーナーテクノロジーズ インコーポレーテッド 独立のリテーナリングと多領域圧力制御とを備えた空気圧ダイアフラムヘッドおよび該空気圧ダイアフラムヘッドを用いた方法
US6602114B1 (en) 2000-05-19 2003-08-05 Applied Materials Inc. Multilayer retaining ring for chemical mechanical polishing
US6375550B1 (en) * 2000-06-05 2002-04-23 Lsi Logic Corporation Method and apparatus for enhancing uniformity during polishing of a semiconductor wafer
DE10196317T1 (de) * 2000-06-08 2003-11-13 Speedfam Ipec Corp Chandler Orbitalpoliervorrichtung
US7029381B2 (en) * 2000-07-31 2006-04-18 Aviza Technology, Inc. Apparatus and method for chemical mechanical polishing of substrates
WO2002010729A1 (en) * 2000-07-31 2002-02-07 Asml Us, Inc. In-situ method and apparatus for end point detection in chemical mechanical polishing
US6848980B2 (en) 2001-10-10 2005-02-01 Applied Materials, Inc. Vibration damping in a carrier head
US6676497B1 (en) 2000-09-08 2004-01-13 Applied Materials Inc. Vibration damping in a chemical mechanical polishing system
US7497767B2 (en) * 2000-09-08 2009-03-03 Applied Materials, Inc. Vibration damping during chemical mechanical polishing
US7255637B2 (en) * 2000-09-08 2007-08-14 Applied Materials, Inc. Carrier head vibration damping
JP2002187060A (ja) * 2000-10-11 2002-07-02 Ebara Corp 基板保持装置、ポリッシング装置、及び研磨方法
JP4620072B2 (ja) * 2000-10-11 2011-01-26 株式会社荏原製作所 ポリッシング装置
US6447368B1 (en) 2000-11-20 2002-09-10 Speedfam-Ipec Corporation Carriers with concentric balloons supporting a diaphragm
DE10058305A1 (de) 2000-11-24 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Oberflächenpolitur von Siliciumscheiben
US6468131B1 (en) 2000-11-28 2002-10-22 Speedfam-Ipec Corporation Method to mathematically characterize a multizone carrier
US6508694B2 (en) * 2001-01-16 2003-01-21 Speedfam-Ipec Corporation Multi-zone pressure control carrier
US6736952B2 (en) * 2001-02-12 2004-05-18 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece
US6582277B2 (en) 2001-05-01 2003-06-24 Speedfam-Ipec Corporation Method for controlling a process in a multi-zonal apparatus
US6641462B2 (en) * 2001-06-27 2003-11-04 Speedfam-Ipec Corporation Method and apparatus for distributing fluid to a polishing surface during chemical mechanical polishing
JP3970561B2 (ja) * 2001-07-10 2007-09-05 株式会社荏原製作所 基板保持装置及び基板研磨装置
US7086933B2 (en) * 2002-04-22 2006-08-08 Applied Materials, Inc. Flexible polishing fluid delivery system
US6586337B2 (en) 2001-11-09 2003-07-01 Speedfam-Ipec Corporation Method and apparatus for endpoint detection during chemical mechanical polishing
TW541224B (en) * 2001-12-14 2003-07-11 Promos Technologies Inc Chemical mechanical polishing (CMP) apparatus with temperature control
US6736720B2 (en) * 2001-12-26 2004-05-18 Lam Research Corporation Apparatus and methods for controlling wafer temperature in chemical mechanical polishing
US6890249B1 (en) 2001-12-27 2005-05-10 Applied Materials, Inc. Carrier head with edge load retaining ring
US6835125B1 (en) 2001-12-27 2004-12-28 Applied Materials Inc. Retainer with a wear surface for chemical mechanical polishing
US6872130B1 (en) 2001-12-28 2005-03-29 Applied Materials Inc. Carrier head with non-contact retainer
US20060255016A1 (en) * 2002-01-17 2006-11-16 Novellus Systems, Inc. Method for polishing copper on a workpiece surface
US20030134576A1 (en) * 2002-01-17 2003-07-17 Saket Chadda Method for polishing copper on a workpiece surface
US6739958B2 (en) 2002-03-19 2004-05-25 Applied Materials Inc. Carrier head with a vibration reduction feature for a chemical mechanical polishing system
US6790123B2 (en) 2002-05-16 2004-09-14 Speedfam-Ipec Corporation Method for processing a work piece in a multi-zonal processing apparatus
JP2004042217A (ja) * 2002-07-12 2004-02-12 Ebara Corp 研磨方法、研磨装置および研磨工具の製造方法
TWM255104U (en) * 2003-02-05 2005-01-11 Applied Materials Inc Retaining ring with flange for chemical mechanical polishing
US6974371B2 (en) * 2003-04-30 2005-12-13 Applied Materials, Inc. Two part retaining ring
US7341880B2 (en) 2003-09-17 2008-03-11 Luminus Devices, Inc. Light emitting device processes
US7344903B2 (en) * 2003-09-17 2008-03-18 Luminus Devices, Inc. Light emitting device processes
US20050126708A1 (en) * 2003-12-10 2005-06-16 Applied Materials, Inc. Retaining ring with slurry transport grooves
US7150673B2 (en) * 2004-07-09 2006-12-19 Ebara Corporation Method for estimating polishing profile or polishing amount, polishing method and polishing apparatus
US20090023239A1 (en) * 2004-07-22 2009-01-22 Luminus Devices, Inc. Light emitting device processes
DE102004040429B4 (de) * 2004-08-20 2009-12-17 Peter Wolters Gmbh Doppelseiten-Poliermaschine
US20060226123A1 (en) * 2005-04-07 2006-10-12 Applied Materials, Inc. Profile control using selective heating
KR100632468B1 (ko) * 2005-08-31 2006-10-09 삼성전자주식회사 리테이너 링, 연마 헤드 및 화학적 기계적 연마 장치
US7207871B1 (en) * 2005-10-06 2007-04-24 Applied Materials, Inc. Carrier head with multiple chambers
US7153188B1 (en) 2005-10-07 2006-12-26 Applied Materials, Inc. Temperature control in a chemical mechanical polishing system
US20070131562A1 (en) * 2005-12-08 2007-06-14 Applied Materials, Inc. Method and apparatus for planarizing a substrate with low fluid consumption
US7364496B2 (en) * 2006-03-03 2008-04-29 Inopla Inc. Polishing head for polishing semiconductor wafers
US7391086B1 (en) * 2006-06-28 2008-06-24 Novellus Systems, Inc. Conductive contacts and methods for fabricating conductive contacts for elctrochemical planarization of a work piece
US7335088B1 (en) * 2007-01-16 2008-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. CMP system with temperature-controlled polishing head
US8110425B2 (en) 2007-03-20 2012-02-07 Luminus Devices, Inc. Laser liftoff structure and related methods
JP5377873B2 (ja) * 2008-03-18 2013-12-25 株式会社東京精密 ウェーハ研磨装置及び該研磨装置を用いたウェーハ研磨方法
US8192248B2 (en) * 2008-05-30 2012-06-05 Memc Electronic Materials, Inc. Semiconductor wafer polishing apparatus and method of polishing
US8371904B2 (en) * 2008-08-08 2013-02-12 Globalfoundries Singapore Pte. Ltd. Polishing with enhanced uniformity
US8591286B2 (en) * 2010-08-11 2013-11-26 Applied Materials, Inc. Apparatus and method for temperature control during polishing
JP5236705B2 (ja) * 2010-09-08 2013-07-17 株式会社荏原製作所 研磨装置
JP5379773B2 (ja) * 2010-10-27 2013-12-25 東京エレクトロン株式会社 めっき処理装置及びめっき処理方法並びにめっき処理プログラムを記録した記録媒体
JP5643151B2 (ja) * 2011-05-17 2014-12-17 新光電気工業株式会社 研磨装置及び研磨方法
US9418904B2 (en) 2011-11-14 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Localized CMP to improve wafer planarization
US10065288B2 (en) * 2012-02-14 2018-09-04 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing (CMP) platform for local profile control
US20130210173A1 (en) * 2012-02-14 2013-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple Zone Temperature Control for CMP
US8873032B1 (en) * 2013-05-07 2014-10-28 CheckPoint Technologies, LLC. Optical probing system having reliable temperature control
JP6266493B2 (ja) * 2014-03-20 2018-01-24 株式会社荏原製作所 研磨装置及び研磨方法
US9610672B2 (en) 2014-06-27 2017-04-04 Applied Materials, Inc. Configurable pressure design for multizone chemical mechanical planarization polishing head
US10414018B2 (en) * 2016-02-22 2019-09-17 Ebara Corporation Apparatus and method for regulating surface temperature of polishing pad
CN106041698B (zh) * 2016-07-19 2018-08-17 苏州赫瑞特电子专用设备科技有限公司 一种双面抛光机的上盘温度检测结构
US10350724B2 (en) * 2017-07-31 2019-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Temperature control in chemical mechanical polish
US12017322B2 (en) * 2018-08-14 2024-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing method
JP7447285B2 (ja) 2020-06-29 2024-03-11 アプライド マテリアルズ インコーポレイテッド 複数の角度方向加圧可能区域を有する研磨キャリアヘッド

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3571978A (en) * 1967-09-11 1971-03-23 Spitfire Tool & Machine Co Inc Lapping machine having pressure plates, the temperature of which is controlled by a coolant
DE2809274A1 (de) * 1978-03-03 1979-09-13 Wacker Chemitronic Verfahren zur vergleichmaessigung des polierabtrages von scheiben beim polieren
US4313284A (en) * 1980-03-27 1982-02-02 Monsanto Company Apparatus for improving flatness of polished wafers
DE3128880C2 (de) * 1981-07-22 1987-03-19 Fa. Peter Wolters, 2370 Rendsburg Maschine zum Läppen oder Polieren
US4450652A (en) * 1981-09-04 1984-05-29 Monsanto Company Temperature control for wafer polishing
FR2551382B1 (fr) * 1983-09-02 1986-05-16 Essilor Int Procede et dispositif pour le surfacage d'une lentille optique
JPS6080560A (ja) * 1983-10-12 1985-05-08 Toppan Printing Co Ltd マスクの裏面研磨方法
JPS60146675A (ja) * 1984-01-05 1985-08-02 Canon Inc チヤツク
JPH0696225B2 (ja) * 1987-10-23 1994-11-30 信越半導体株式会社 研磨方法
US4918869A (en) * 1987-10-28 1990-04-24 Fujikoshi Machinery Corporation Method for lapping a wafer material and an apparatus therefor
DE3801969A1 (de) * 1988-01-23 1989-07-27 Zeiss Carl Fa Verfahren und vorrichtung zum laeppen bzw. polieren optischer flaechen
JPH01216768A (ja) * 1988-02-25 1989-08-30 Showa Denko Kk 半導体基板の研磨方法及びその装置
JPH079896B2 (ja) * 1988-10-06 1995-02-01 信越半導体株式会社 研磨装置
US4912883A (en) * 1989-02-13 1990-04-03 International Business Machines Corporation Lapping control system for magnetic transducers
JPH02240925A (ja) * 1989-03-15 1990-09-25 Hitachi Ltd ウエハ研磨装置
US5127196A (en) * 1990-03-01 1992-07-07 Intel Corporation Apparatus for planarizing a dielectric formed over a semiconductor substrate
US5036630A (en) * 1990-04-13 1991-08-06 International Business Machines Corporation Radial uniformity control of semiconductor wafer polishing
US5203119A (en) * 1991-03-22 1993-04-20 Read-Rite Corporation Automated system for lapping air bearing surface of magnetic heads
JP3370112B2 (ja) * 1992-10-12 2003-01-27 不二越機械工業株式会社 ウエハーの研磨装置
US5398459A (en) * 1992-11-27 1995-03-21 Kabushiki Kaisha Toshiba Method and apparatus for polishing a workpiece

Also Published As

Publication number Publication date
KR950012624A (ko) 1995-05-16
JPH07122523A (ja) 1995-05-12
US5605488A (en) 1997-02-25
DE69405342T2 (de) 1998-01-29
JP3311116B2 (ja) 2002-08-05
EP0650806B1 (de) 1997-09-03
EP0650806A1 (de) 1995-05-03
KR0147451B1 (ko) 1998-11-02

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