DE69329374T2 - Verfahren zur Herstellung eines Halbleitersubstrates mittels eines Verbundverfahrens - Google Patents
Verfahren zur Herstellung eines Halbleitersubstrates mittels eines VerbundverfahrensInfo
- Publication number
- DE69329374T2 DE69329374T2 DE69329374T DE69329374T DE69329374T2 DE 69329374 T2 DE69329374 T2 DE 69329374T2 DE 69329374 T DE69329374 T DE 69329374T DE 69329374 T DE69329374 T DE 69329374T DE 69329374 T2 DE69329374 T2 DE 69329374T2
- Authority
- DE
- Germany
- Prior art keywords
- producing
- semiconductor substrate
- composite
- composite method
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002131 composite material Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34672992 | 1992-12-25 | ||
JP5308047A JPH06244389A (ja) | 1992-12-25 | 1993-12-08 | 半導体基板の作製方法及び該方法により作製された半導体基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69329374D1 DE69329374D1 (de) | 2000-10-12 |
DE69329374T2 true DE69329374T2 (de) | 2001-03-08 |
Family
ID=26565390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69329374T Expired - Fee Related DE69329374T2 (de) | 1992-12-25 | 1993-12-22 | Verfahren zur Herstellung eines Halbleitersubstrates mittels eines Verbundverfahrens |
Country Status (4)
Country | Link |
---|---|
US (1) | US5763288A (de) |
EP (1) | EP0603849B1 (de) |
JP (1) | JPH06244389A (de) |
DE (1) | DE69329374T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2723787B2 (ja) * | 1993-08-20 | 1998-03-09 | 信越半導体株式会社 | 結合型基板の製造方法 |
AT403859B (de) * | 1994-08-17 | 1998-06-25 | Thallner Aya Maria | Reinstraum, insbesondere für soi-bondungen |
TW308707B (en) * | 1995-12-15 | 1997-06-21 | Komatsu Denshi Kinzoku Kk | Manufacturing method of bonding SOI wafer |
JPH09331049A (ja) * | 1996-04-08 | 1997-12-22 | Canon Inc | 貼り合わせsoi基板の作製方法及びsoi基板 |
JP3501642B2 (ja) * | 1997-12-26 | 2004-03-02 | キヤノン株式会社 | 基板処理方法 |
JP2965981B1 (ja) * | 1998-09-30 | 1999-10-18 | モトローラ株式会社 | フリップチップボンディングの最適化条件検出方法 |
JP2002184960A (ja) * | 2000-12-18 | 2002-06-28 | Shin Etsu Handotai Co Ltd | Soiウェーハの製造方法及びsoiウェーハ |
JP4822582B2 (ja) | 2000-12-22 | 2011-11-24 | Sumco Techxiv株式会社 | ボロンドープされたシリコンウエハの熱処理方法 |
FR2851846A1 (fr) * | 2003-02-28 | 2004-09-03 | Canon Kk | Systeme de liaison et procede de fabrication d'un substrat semi-conducteur |
WO2004099473A1 (en) * | 2003-05-06 | 2004-11-18 | Canon Kabushiki Kaisha | Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor |
JP2004335642A (ja) * | 2003-05-06 | 2004-11-25 | Canon Inc | 基板およびその製造方法 |
WO2005045908A1 (ja) * | 2003-11-06 | 2005-05-19 | Matsushita Electric Industrial Co., Ltd. | 基板貼り合わせ方法、その貼り合わせ基板及び直接接合基板 |
JP4771510B2 (ja) * | 2004-06-23 | 2011-09-14 | キヤノン株式会社 | 半導体層の製造方法及び基板の製造方法 |
JP4950047B2 (ja) * | 2004-07-22 | 2012-06-13 | ボード オブ トラスティーズ オブ ザ レランド スタンフォード ジュニア ユニバーシティ | ゲルマニウムの成長方法及び半導体基板の製造方法 |
US20070023850A1 (en) * | 2005-07-30 | 2007-02-01 | Chien-Hua Chen | Bonding surfaces together via plasma treatment on both surfaces with wet treatment on only one surface |
JP5171016B2 (ja) | 2006-10-27 | 2013-03-27 | キヤノン株式会社 | 半導体部材、半導体物品の製造方法、その製造方法を用いたledアレイ |
JP2009094144A (ja) * | 2007-10-04 | 2009-04-30 | Canon Inc | 発光素子の製造方法 |
US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
US8652935B2 (en) | 2010-12-16 | 2014-02-18 | Tessera, Inc. | Void-free wafer bonding using channels |
JP5861604B2 (ja) * | 2012-09-21 | 2016-02-16 | 信越化学工業株式会社 | 太陽電池の製造方法 |
FR3034566A1 (fr) * | 2015-03-31 | 2016-10-07 | Commissariat Energie Atomique | Procede d'assemblage de substrats |
CN112599468B (zh) * | 2020-12-31 | 2022-10-14 | 福建江夏学院 | 一种基于溶剂处理制备二硫化钼薄层及其薄膜晶体管的方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07111940B2 (ja) * | 1987-09-11 | 1995-11-29 | 日産自動車株式会社 | 半導体基板の接合方法 |
US5266135A (en) * | 1990-02-07 | 1993-11-30 | Harris Corporation | Wafer bonding process employing liquid oxidant |
EP0441270B1 (de) * | 1990-02-07 | 1995-11-15 | Harris Corporation | Löten von Wafern unter Verwendung von eingeschlossenem oxydierendem Dampf |
JP3176072B2 (ja) * | 1991-01-16 | 2001-06-11 | キヤノン株式会社 | 半導体基板の形成方法 |
JP3112106B2 (ja) * | 1991-10-11 | 2000-11-27 | キヤノン株式会社 | 半導体基材の作製方法 |
-
1993
- 1993-12-08 JP JP5308047A patent/JPH06244389A/ja active Pending
- 1993-12-22 EP EP93120671A patent/EP0603849B1/de not_active Expired - Lifetime
- 1993-12-22 DE DE69329374T patent/DE69329374T2/de not_active Expired - Fee Related
-
1997
- 1997-06-24 US US08/881,250 patent/US5763288A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5763288A (en) | 1998-06-09 |
DE69329374D1 (de) | 2000-10-12 |
EP0603849B1 (de) | 2000-09-06 |
JPH06244389A (ja) | 1994-09-02 |
EP0603849A3 (de) | 1997-09-24 |
EP0603849A2 (de) | 1994-06-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |