DE69323716D1 - Verfahren zur CVD-Beschichtung einer Mehrschichtstruktur in einer einzigen Kammer - Google Patents

Verfahren zur CVD-Beschichtung einer Mehrschichtstruktur in einer einzigen Kammer

Info

Publication number
DE69323716D1
DE69323716D1 DE69323716T DE69323716T DE69323716D1 DE 69323716 D1 DE69323716 D1 DE 69323716D1 DE 69323716 T DE69323716 T DE 69323716T DE 69323716 T DE69323716 T DE 69323716T DE 69323716 D1 DE69323716 D1 DE 69323716D1
Authority
DE
Germany
Prior art keywords
multilayer structure
single chamber
cvd coating
cvd
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69323716T
Other languages
English (en)
Other versions
DE69323716T2 (de
Inventor
Kam S Law
Robert Robertson
Pamela Lou
Marc Michael Kollrack
Angela Lee
Dan Maydan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=21743941&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69323716(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69323716D1 publication Critical patent/DE69323716D1/de
Publication of DE69323716T2 publication Critical patent/DE69323716T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67236—Apparatus for manufacturing or treating in a plurality of work-stations the substrates being processed being not semiconductor wafers, e.g. leadframes or chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
DE69323716T 1993-01-28 1993-12-24 Verfahren zur CVD-Beschichtung einer Mehrschichtstruktur in einer einzigen Kammer Expired - Fee Related DE69323716T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1011093A 1993-01-28 1993-01-28

Publications (2)

Publication Number Publication Date
DE69323716D1 true DE69323716D1 (de) 1999-04-08
DE69323716T2 DE69323716T2 (de) 1999-08-19

Family

ID=21743941

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69323716T Expired - Fee Related DE69323716T2 (de) 1993-01-28 1993-12-24 Verfahren zur CVD-Beschichtung einer Mehrschichtstruktur in einer einzigen Kammer

Country Status (4)

Country Link
US (1) US6338874B1 (de)
EP (1) EP0608633B1 (de)
JP (1) JP2981102B2 (de)
DE (1) DE69323716T2 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100291971B1 (ko) * 1993-10-26 2001-10-24 야마자끼 순페이 기판처리장치및방법과박막반도체디바이스제조방법
GB2320135A (en) * 1996-12-04 1998-06-10 Smiths Industries Plc Semiconductor wafer processing apparatus
KR100252210B1 (ko) * 1996-12-24 2000-04-15 윤종용 반도체장치 제조용 건식식각장치
DE69734877T2 (de) * 1997-09-10 2006-09-14 Samsung Electronics Co., Ltd., Suwon Vorrichtung zur Herstellung von einem Halbleiter-Bauelement und ein diese Vorrichtung verwendendes Verfahren zur Herstellung einer Polysilicium-Schicht
US6235634B1 (en) 1997-10-08 2001-05-22 Applied Komatsu Technology, Inc. Modular substrate processing system
US6042623A (en) * 1998-01-12 2000-03-28 Tokyo Electron Limited Two-wafer loadlock wafer processing apparatus and loading and unloading method therefor
WO1999053540A1 (en) * 1998-04-13 1999-10-21 Applied Materials, Inc. A method of forming a silicon nitride layer on a semiconductor wafer
US6176668B1 (en) 1998-05-20 2001-01-23 Applied Komatsu Technology, Inc. In-situ substrate transfer shuttle
US6517303B1 (en) 1998-05-20 2003-02-11 Applied Komatsu Technology, Inc. Substrate transfer shuttle
US6086362A (en) * 1998-05-20 2000-07-11 Applied Komatsu Technology, Inc. Multi-function chamber for a substrate processing system
US6213704B1 (en) 1998-05-20 2001-04-10 Applied Komatsu Technology, Inc. Method and apparatus for substrate transfer and processing
US6206176B1 (en) 1998-05-20 2001-03-27 Applied Komatsu Technology, Inc. Substrate transfer shuttle having a magnetic drive
JP4515550B2 (ja) * 1999-03-18 2010-08-04 東芝モバイルディスプレイ株式会社 薄膜形成方法
US6298685B1 (en) 1999-11-03 2001-10-09 Applied Materials, Inc. Consecutive deposition system
US6458416B1 (en) * 2000-07-19 2002-10-01 Micron Technology, Inc. Deposition methods
JP5021112B2 (ja) * 2000-08-11 2012-09-05 キヤノンアネルバ株式会社 真空処理装置
US7192888B1 (en) * 2000-08-21 2007-03-20 Micron Technology, Inc. Low selectivity deposition methods
US7094690B1 (en) * 2000-08-31 2006-08-22 Micron Technology, Inc. Deposition methods and apparatuses providing surface activation
US6812134B1 (en) * 2001-06-28 2004-11-02 Lsi Logic Corporation Dual layer barrier film techniques to prevent resist poisoning
US7368014B2 (en) * 2001-08-09 2008-05-06 Micron Technology, Inc. Variable temperature deposition methods
US7316966B2 (en) 2001-09-21 2008-01-08 Applied Materials, Inc. Method for transferring substrates in a load lock chamber
US6699380B1 (en) * 2002-10-18 2004-03-02 Applied Materials Inc. Modular electrochemical processing system
JP2004335715A (ja) * 2003-05-07 2004-11-25 Toppoly Optoelectronics Corp シリコン酸化層の形成方法
US7207766B2 (en) 2003-10-20 2007-04-24 Applied Materials, Inc. Load lock chamber for large area substrate processing system
US7604841B2 (en) * 2004-03-31 2009-10-20 Tokyo Electron Limited Method for extending time between chamber cleaning processes
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US20050233092A1 (en) * 2004-04-20 2005-10-20 Applied Materials, Inc. Method of controlling the uniformity of PECVD-deposited thin films
US7125758B2 (en) * 2004-04-20 2006-10-24 Applied Materials, Inc. Controlling the properties and uniformity of a silicon nitride film by controlling the film forming precursors
US8074599B2 (en) * 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US8328939B2 (en) * 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US7845891B2 (en) 2006-01-13 2010-12-07 Applied Materials, Inc. Decoupled chamber body
US7665951B2 (en) 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
US7845618B2 (en) 2006-06-28 2010-12-07 Applied Materials, Inc. Valve door with ball coupling
US20080317973A1 (en) * 2007-06-22 2008-12-25 White John M Diffuser support
CN102007597B (zh) * 2008-04-17 2014-02-19 应用材料公司 低温薄膜晶体管工艺、装置特性和装置稳定性改进
JP5478280B2 (ja) * 2010-01-27 2014-04-23 東京エレクトロン株式会社 基板加熱装置および基板加熱方法、ならびに基板処理システム
US8076250B1 (en) * 2010-10-06 2011-12-13 Applied Materials, Inc. PECVD oxide-nitride and oxide-silicon stacks for 3D memory application
CN102856392B (zh) * 2012-10-09 2015-12-02 深圳市华星光电技术有限公司 薄膜晶体管主动装置及其制作方法
US20160325497A1 (en) 2015-05-04 2016-11-10 Global Oled Technology Llc Entwined manifolds for vapor deposition and fluid mixing
CN111194361B (zh) * 2017-10-09 2022-12-13 应用材料公司 用于金属沉积的作为成核层的保形的掺杂的非晶硅

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583289A (ja) * 1981-06-30 1983-01-10 Fujitsu Ltd 薄膜トランジスタの製造方法
JPS60204880A (ja) * 1984-03-27 1985-10-16 Matsushita Electric Ind Co Ltd 絶縁膜の製造方法
JPS6188518A (ja) * 1984-10-05 1986-05-06 Fujitsu Ltd 薄膜トランジスタの製造方法
JPS61125082A (ja) * 1984-11-21 1986-06-12 Hitachi Maxell Ltd 薄膜トランジスタ
JP2566914B2 (ja) * 1985-12-28 1996-12-25 キヤノン株式会社 薄膜半導体素子及びその形成法
JPH084070B2 (ja) * 1985-12-28 1996-01-17 キヤノン株式会社 薄膜半導体素子及びその形成法
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film
US4692344A (en) * 1986-02-28 1987-09-08 Rca Corporation Method of forming a dielectric film and semiconductor device including said film
JP2687959B2 (ja) * 1986-06-18 1997-12-08 松下電器産業株式会社 薄膜トランジスタ特性の安定化方法
JPS6353929A (ja) * 1986-08-22 1988-03-08 Fuji Xerox Co Ltd 半導体装置の製造方法
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
EP0272141B1 (de) * 1986-12-19 1994-03-02 Applied Materials, Inc. Integriertes Bearbeitungssystem mit Vielfachkammer
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US4892753A (en) * 1986-12-19 1990-01-09 Applied Materials, Inc. Process for PECVD of silicon oxide using TEOS decomposition
JPH01127679A (ja) * 1987-03-27 1989-05-19 Canon Inc 堆積膜形成方法
JPS63315940A (ja) * 1987-06-19 1988-12-23 Res Dev Corp Of Japan アモルファスシリコンを用いたイオンセンシング電界効果トランジスタとその製造方法
JPS6431468A (en) * 1987-07-28 1989-02-01 Tech Res Assoc Conduct Inorg Compo Manufacture of thin film transistor
JPH0217647A (ja) * 1988-07-06 1990-01-22 Toppan Printing Co Ltd 薄膜トランジスタおよびその製造方法
JPH0680827B2 (ja) * 1988-08-12 1994-10-12 日本プレシジョン・サーキッツ株式会社 逆スタガー型非晶質シリコン薄膜トランジスタおよびその製造方法
US5060034A (en) * 1988-11-01 1991-10-22 Casio Computer Co., Ltd. Memory device using thin film transistors having an insulation film with si/n composition ratio of 0.85 to 1.1
JPH02186641A (ja) * 1989-01-12 1990-07-20 Nec Corp 薄膜電界効果型トランジスタ素子の製造方法
US4984041A (en) * 1989-07-28 1991-01-08 Xerox Corporation High voltage thin film transistor with second control electrode
US5041888A (en) * 1989-09-18 1991-08-20 General Electric Company Insulator structure for amorphous silicon thin-film transistors
JPH0734467B2 (ja) * 1989-11-16 1995-04-12 富士ゼロックス株式会社 イメージセンサ製造方法
DE69115405T2 (de) * 1990-09-21 1996-06-13 Casio Computer Co Ltd Dünnfilmtransistor und eine Dünnfilmtransistorpanele, die solche Transistoren verwendet
US5132745A (en) * 1990-10-05 1992-07-21 General Electric Company Thin film transistor having an improved gate structure and gate coverage by the gate dielectric
JPH04243166A (ja) * 1991-01-18 1992-08-31 Fuji Electric Co Ltd 薄膜トランジスタおよびその製造方法
JPH04302147A (ja) * 1991-03-29 1992-10-26 Matsushita Electric Ind Co Ltd Ｔｆｔとその製造方法
JPH04342120A (ja) * 1991-05-17 1992-11-27 Canon Inc 水素化非晶質シリコン薄膜の製造方法
JP2880322B2 (ja) * 1991-05-24 1999-04-05 キヤノン株式会社 堆積膜の形成方法
JP2506539B2 (ja) 1992-02-27 1996-06-12 株式会社ジーティシー 絶縁膜の形成方法
JPH05326557A (ja) * 1992-05-20 1993-12-10 Matsushita Electric Ind Co Ltd 薄膜の堆積方法及び薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
JP2981102B2 (ja) 1999-11-22
DE69323716T2 (de) 1999-08-19
US6338874B1 (en) 2002-01-15
EP0608633B1 (de) 1999-03-03
EP0608633A3 (en) 1996-05-01
JPH06283430A (ja) 1994-10-07
EP0608633A2 (de) 1994-08-03

Similar Documents

Publication Publication Date Title
DE69323716D1 (de) Verfahren zur CVD-Beschichtung einer Mehrschichtstruktur in einer einzigen Kammer
DE69331291D1 (de) Verfahren zur Herstellung einer Sperrbeschichtung mittels plasmaunterstütztem CVD
DE69413346D1 (de) Verfahren zur Beschichtung einer Abzweigeleitung
DE69414496D1 (de) Verfahren zur Beschichtung einer Abzweigeleitung
DE69328390D1 (de) Verfahren zur Herstellung eines mehrlagigen Substrats
DE69634194D1 (de) Verfahren zur bearbeitung einer oberfläche
DE69518548D1 (de) Verfahren zur Herstellung eines keramischen Substrates
DE59307302D1 (de) Verfahren zur Herstellung von Mehrschichtlackierungen
DE59404573D1 (de) Verfahren zur Herstellung von Mehrschichtlackierungen
DE59308693D1 (de) Verfahren zur Herstellung von Mehrschichtlackierungen
DE69030140D1 (de) Verfahren und Anordnung zur kontinuierlichen Bildung einer durch Mikrowellen-Plasma-CVD niedergeschlagenen grossflächigen Dünnschicht
DE69407734D1 (de) Verfahren zur Herstellung diamantartiger Beschichtungen
DE69434049D1 (de) Keramisches Substrat und Verfahren zu dessen Herstellung
DE69416767D1 (de) Verfahren zur Herstellung eines Si-O beinhaltenden Überzuges
DE69431503D1 (de) Verfahren zur Herstellung einer Mehrschichtfolie
DE69426791D1 (de) Verfahren zur Bearbeitung der Oberfläche eines beschichteten Substrats
DE69423143D1 (de) Verfahren zur Herstellung einer Doppelschichtfolie
DE69522464D1 (de) Verfahren zur Innenbeschichtung eines Rohres
DE69325766D1 (de) Verfahren zur Herstellung einer dünnen zweidimensionalen Partikelnbeschichtung
DE69526286D1 (de) Verfahren zur Herstellung eines keramischen Substrates
DE69304509D1 (de) Verfahren zur Beschichtung einer Abzweigeleitung
DE69306600D1 (de) Verfahren zur Herstellung eines mehrschichtigen Leitersubstrats
DE59610775D1 (de) Verfahren zur Regelung einer Trennwandkolonne
DE69425459D1 (de) Substrat auf Keramikbasis und Verfahren zu dessen Herstellung
DE69811800D1 (de) Verfahren zur Ablagerung einer dielektrischen Ta2O5-Schicht

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee