JPS6431468A - Manufacture of thin film transistor - Google Patents

Manufacture of thin film transistor

Info

Publication number
JPS6431468A
JPS6431468A JP18840787A JP18840787A JPS6431468A JP S6431468 A JPS6431468 A JP S6431468A JP 18840787 A JP18840787 A JP 18840787A JP 18840787 A JP18840787 A JP 18840787A JP S6431468 A JPS6431468 A JP S6431468A
Authority
JP
Japan
Prior art keywords
amorphous silicon
layer
silicon hydride
substrate
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18840787A
Other languages
Japanese (ja)
Inventor
Koji Nakanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TECH RES ASSOC CONDUCT INORG COMPO
Original Assignee
TECH RES ASSOC CONDUCT INORG COMPO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TECH RES ASSOC CONDUCT INORG COMPO filed Critical TECH RES ASSOC CONDUCT INORG COMPO
Priority to JP18840787A priority Critical patent/JPS6431468A/en
Publication of JPS6431468A publication Critical patent/JPS6431468A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

PURPOSE:To form a semiconductor thin film transistor having preferable transistor characteristic and high reliability with good productivity by forming by an optical exciting CVD method only a gate insulating film/amorphous silicon hydride layer boundary, and forming partial amorphous silicon hydride layer of the remainder by a plasma CVD method. CONSTITUTION:A silicon nitride film is deposited as a gate insulating film 22 on a glass substrate 20 formed with a gate electrode 21. A substrate conveying mechanism 4 is operated, the glass substrate 20 is conveyed into a vacuum chamber 2, a substrate temperature is set to 200-350 deg.C, held at a predetermined pressure of Si2H6 gas, a low pressure mercury lamp 230 is fired to form an amorphous silicon hydride layer 23 as an active layer. Then, it is conveyed to a vacuum chamber 1 of the substrate 20, the substrate temperature is held at 150-300 deg.C, SiH4 gas is fed at a predetermined flow rate, and held under a predetermined pressure, a high frequency power is applied to generate a glow discharge, and an amorphous silicon hydride layer 24 is deposited 70nm. PH3, SiH4 gases are fed at desired flow rate, and an amorphous silicon hydride N<+> type layer is deposited as an ohmic contact layer 25 by a plasma CVD method.
JP18840787A 1987-07-28 1987-07-28 Manufacture of thin film transistor Pending JPS6431468A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18840787A JPS6431468A (en) 1987-07-28 1987-07-28 Manufacture of thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18840787A JPS6431468A (en) 1987-07-28 1987-07-28 Manufacture of thin film transistor

Publications (1)

Publication Number Publication Date
JPS6431468A true JPS6431468A (en) 1989-02-01

Family

ID=16223110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18840787A Pending JPS6431468A (en) 1987-07-28 1987-07-28 Manufacture of thin film transistor

Country Status (1)

Country Link
JP (1) JPS6431468A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05838A (en) * 1991-06-18 1993-01-08 Asahi Boukaban Kogyosho:Kk Inorganic plate for curved surface of building
US6338874B1 (en) * 1993-01-28 2002-01-15 Applied Materials, Inc. Method for multilayer CVD processing in a single chamber

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05838A (en) * 1991-06-18 1993-01-08 Asahi Boukaban Kogyosho:Kk Inorganic plate for curved surface of building
US6338874B1 (en) * 1993-01-28 2002-01-15 Applied Materials, Inc. Method for multilayer CVD processing in a single chamber

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