JPS6431468A - Manufacture of thin film transistor - Google Patents
Manufacture of thin film transistorInfo
- Publication number
- JPS6431468A JPS6431468A JP18840787A JP18840787A JPS6431468A JP S6431468 A JPS6431468 A JP S6431468A JP 18840787 A JP18840787 A JP 18840787A JP 18840787 A JP18840787 A JP 18840787A JP S6431468 A JPS6431468 A JP S6431468A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- layer
- silicon hydride
- substrate
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 6
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 5
- 239000010408 film Substances 0.000 abstract 3
- 239000007789 gas Substances 0.000 abstract 3
- 239000011521 glass Substances 0.000 abstract 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 2
- 229910007264 Si2H6 Inorganic materials 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract 1
- 229910052753 mercury Inorganic materials 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Abstract
PURPOSE:To form a semiconductor thin film transistor having preferable transistor characteristic and high reliability with good productivity by forming by an optical exciting CVD method only a gate insulating film/amorphous silicon hydride layer boundary, and forming partial amorphous silicon hydride layer of the remainder by a plasma CVD method. CONSTITUTION:A silicon nitride film is deposited as a gate insulating film 22 on a glass substrate 20 formed with a gate electrode 21. A substrate conveying mechanism 4 is operated, the glass substrate 20 is conveyed into a vacuum chamber 2, a substrate temperature is set to 200-350 deg.C, held at a predetermined pressure of Si2H6 gas, a low pressure mercury lamp 230 is fired to form an amorphous silicon hydride layer 23 as an active layer. Then, it is conveyed to a vacuum chamber 1 of the substrate 20, the substrate temperature is held at 150-300 deg.C, SiH4 gas is fed at a predetermined flow rate, and held under a predetermined pressure, a high frequency power is applied to generate a glow discharge, and an amorphous silicon hydride layer 24 is deposited 70nm. PH3, SiH4 gases are fed at desired flow rate, and an amorphous silicon hydride N<+> type layer is deposited as an ohmic contact layer 25 by a plasma CVD method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18840787A JPS6431468A (en) | 1987-07-28 | 1987-07-28 | Manufacture of thin film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18840787A JPS6431468A (en) | 1987-07-28 | 1987-07-28 | Manufacture of thin film transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6431468A true JPS6431468A (en) | 1989-02-01 |
Family
ID=16223110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18840787A Pending JPS6431468A (en) | 1987-07-28 | 1987-07-28 | Manufacture of thin film transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6431468A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05838A (en) * | 1991-06-18 | 1993-01-08 | Asahi Boukaban Kogyosho:Kk | Inorganic plate for curved surface of building |
US6338874B1 (en) * | 1993-01-28 | 2002-01-15 | Applied Materials, Inc. | Method for multilayer CVD processing in a single chamber |
-
1987
- 1987-07-28 JP JP18840787A patent/JPS6431468A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05838A (en) * | 1991-06-18 | 1993-01-08 | Asahi Boukaban Kogyosho:Kk | Inorganic plate for curved surface of building |
US6338874B1 (en) * | 1993-01-28 | 2002-01-15 | Applied Materials, Inc. | Method for multilayer CVD processing in a single chamber |
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