DE69322747T2 - Halbleiterspeicheranordnung - Google Patents

Halbleiterspeicheranordnung

Info

Publication number
DE69322747T2
DE69322747T2 DE69322747T DE69322747T DE69322747T2 DE 69322747 T2 DE69322747 T2 DE 69322747T2 DE 69322747 T DE69322747 T DE 69322747T DE 69322747 T DE69322747 T DE 69322747T DE 69322747 T2 DE69322747 T2 DE 69322747T2
Authority
DE
Germany
Prior art keywords
memory cell
bit line
potential
mos transistor
switching potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69322747T
Other languages
German (de)
English (en)
Other versions
DE69322747D1 (de
Inventor
Hiroshige Nara-Shi Nara 631 Hirano
Nobuyuki Kyoto-Shi Kyoto 616 Moriwaki
George Kyoto-Shi Kyoto 612 Nakane
Tatsumi Mishima-Gun Osaka 618 Sumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69322747D1 publication Critical patent/DE69322747D1/de
Application granted granted Critical
Publication of DE69322747T2 publication Critical patent/DE69322747T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE69322747T 1992-12-02 1993-11-30 Halbleiterspeicheranordnung Expired - Lifetime DE69322747T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32298392 1992-12-02

Publications (2)

Publication Number Publication Date
DE69322747D1 DE69322747D1 (de) 1999-02-04
DE69322747T2 true DE69322747T2 (de) 1999-06-24

Family

ID=18149835

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69322747T Expired - Lifetime DE69322747T2 (de) 1992-12-02 1993-11-30 Halbleiterspeicheranordnung

Country Status (6)

Country Link
US (2) US5392234A (enExample)
EP (1) EP0600434B1 (enExample)
KR (1) KR970000870B1 (enExample)
CN (1) CN1040706C (enExample)
DE (1) DE69322747T2 (enExample)
TW (1) TW323367B (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07111085A (ja) * 1993-10-14 1995-04-25 Sharp Corp 不揮発性半導体記憶装置
EP0663666B1 (de) * 1994-01-12 1999-03-03 Siemens Aktiengesellschaft Integrierte Halbleiterspeicherschaltung und Verfahren zu ihrem Betrieb
JP3218844B2 (ja) * 1994-03-22 2001-10-15 松下電器産業株式会社 半導体メモリ装置
TW378323B (en) * 1994-09-22 2000-01-01 Matsushita Electric Industrial Co Ltd Ferroelectric memory device
JPH08115265A (ja) * 1994-10-15 1996-05-07 Toshiba Corp 半導体記憶装置及びその製造方法
JP3183076B2 (ja) * 1994-12-27 2001-07-03 日本電気株式会社 強誘電体メモリ装置
JP3127751B2 (ja) * 1995-01-04 2001-01-29 日本電気株式会社 強誘電体メモリ装置およびその動作制御方法
JPH08203266A (ja) * 1995-01-27 1996-08-09 Nec Corp 強誘電体メモリ装置
US5530668A (en) * 1995-04-12 1996-06-25 Ramtron International Corporation Ferroelectric memory sensing scheme using bit lines precharged to a logic one voltage
US5619447A (en) * 1995-05-02 1997-04-08 Motorola, Inc. Ferro-electric memory array architecture and method for forming the same
KR100243883B1 (ko) * 1995-08-02 2000-02-01 모리시타 요이찌 강유전체 메모리 장치
SG79200A1 (en) * 1995-08-21 2001-03-20 Matsushita Electric Industrial Co Ltd Ferroelectric memory devices and method for testing them
JPH09120685A (ja) * 1995-10-24 1997-05-06 Sony Corp 強誘電体記憶装置
US5737260A (en) * 1996-03-27 1998-04-07 Sharp Kabushiki Kaisha Dual mode ferroelectric memory reference scheme
US6118688A (en) * 1997-06-05 2000-09-12 Matsushita Electronics Corporation Ferroelectric memory device and method for driving it
KR100363102B1 (ko) * 1998-07-15 2003-02-19 주식회사 하이닉스반도체 강유전체 메모리
KR100389130B1 (ko) * 2001-04-25 2003-06-25 삼성전자주식회사 2비트 동작의 2트랜지스터를 구비한 불휘발성 메모리소자
US6649453B1 (en) * 2002-08-29 2003-11-18 Micron Technology, Inc. Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation
US6906945B2 (en) * 2003-11-18 2005-06-14 Texas Instruments Incorporated Bitline precharge timing scheme to improve signal margin
SG11201404871TA (en) * 2012-02-16 2014-09-26 Zeno Semiconductor Inc Memory cell comprising first and second transistors and methods of operating
KR102314663B1 (ko) 2016-08-31 2021-10-21 마이크론 테크놀로지, 인크. 2 트랜지스터-1 커패시터 메모리를 포함하고 이를 액세스하기 위한 장치 및 방법
WO2018044485A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Ferroelectric memory cells
EP3507805B1 (en) 2016-08-31 2025-10-01 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
WO2018044487A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
JPH088339B2 (ja) * 1988-10-19 1996-01-29 株式会社東芝 半導体メモリ
US5297077A (en) * 1990-03-30 1994-03-22 Kabushiki Kaisha Toshiba Memory having ferroelectric capacitors polarized in nonvolatile mode
US5400275A (en) * 1990-06-08 1995-03-21 Kabushiki Kaisha Toshiba Semiconductor memory device using ferroelectric capacitor and having only one sense amplifier selected
US5381364A (en) * 1993-06-24 1995-01-10 Ramtron International Corporation Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation

Also Published As

Publication number Publication date
DE69322747D1 (de) 1999-02-04
TW323367B (enExample) 1997-12-21
US5467302A (en) 1995-11-14
CN1091544A (zh) 1994-08-31
CN1040706C (zh) 1998-11-11
KR970000870B1 (ko) 1997-01-20
EP0600434B1 (en) 1998-12-23
KR940016262A (ko) 1994-07-22
EP0600434A3 (en) 1996-06-05
US5392234A (en) 1995-02-21
EP0600434A2 (en) 1994-06-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

8320 Willingness to grant licences declared (paragraph 23)