TW323367B - - Google Patents

Download PDF

Info

Publication number
TW323367B
TW323367B TW082110130A TW82110130A TW323367B TW 323367 B TW323367 B TW 323367B TW 082110130 A TW082110130 A TW 082110130A TW 82110130 A TW82110130 A TW 82110130A TW 323367 B TW323367 B TW 323367B
Authority
TW
Taiwan
Prior art keywords
electrode
logic voltage
cell
bit line
data
Prior art date
Application number
TW082110130A
Other languages
English (en)
Chinese (zh)
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of TW323367B publication Critical patent/TW323367B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
TW082110130A 1992-12-02 1993-11-30 TW323367B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32298392 1992-12-02

Publications (1)

Publication Number Publication Date
TW323367B true TW323367B (enExample) 1997-12-21

Family

ID=18149835

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082110130A TW323367B (enExample) 1992-12-02 1993-11-30

Country Status (6)

Country Link
US (2) US5392234A (enExample)
EP (1) EP0600434B1 (enExample)
KR (1) KR970000870B1 (enExample)
CN (1) CN1040706C (enExample)
DE (1) DE69322747T2 (enExample)
TW (1) TW323367B (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07111085A (ja) * 1993-10-14 1995-04-25 Sharp Corp 不揮発性半導体記憶装置
EP0663666B1 (de) * 1994-01-12 1999-03-03 Siemens Aktiengesellschaft Integrierte Halbleiterspeicherschaltung und Verfahren zu ihrem Betrieb
JP3218844B2 (ja) * 1994-03-22 2001-10-15 松下電器産業株式会社 半導体メモリ装置
TW378323B (en) * 1994-09-22 2000-01-01 Matsushita Electric Industrial Co Ltd Ferroelectric memory device
JPH08115265A (ja) * 1994-10-15 1996-05-07 Toshiba Corp 半導体記憶装置及びその製造方法
JP3183076B2 (ja) * 1994-12-27 2001-07-03 日本電気株式会社 強誘電体メモリ装置
JP3127751B2 (ja) * 1995-01-04 2001-01-29 日本電気株式会社 強誘電体メモリ装置およびその動作制御方法
JPH08203266A (ja) * 1995-01-27 1996-08-09 Nec Corp 強誘電体メモリ装置
US5530668A (en) * 1995-04-12 1996-06-25 Ramtron International Corporation Ferroelectric memory sensing scheme using bit lines precharged to a logic one voltage
US5619447A (en) * 1995-05-02 1997-04-08 Motorola, Inc. Ferro-electric memory array architecture and method for forming the same
KR100243883B1 (ko) * 1995-08-02 2000-02-01 모리시타 요이찌 강유전체 메모리 장치
SG79200A1 (en) * 1995-08-21 2001-03-20 Matsushita Electric Industrial Co Ltd Ferroelectric memory devices and method for testing them
JPH09120685A (ja) * 1995-10-24 1997-05-06 Sony Corp 強誘電体記憶装置
US5737260A (en) * 1996-03-27 1998-04-07 Sharp Kabushiki Kaisha Dual mode ferroelectric memory reference scheme
US6118688A (en) * 1997-06-05 2000-09-12 Matsushita Electronics Corporation Ferroelectric memory device and method for driving it
KR100363102B1 (ko) * 1998-07-15 2003-02-19 주식회사 하이닉스반도체 강유전체 메모리
KR100389130B1 (ko) * 2001-04-25 2003-06-25 삼성전자주식회사 2비트 동작의 2트랜지스터를 구비한 불휘발성 메모리소자
US6649453B1 (en) * 2002-08-29 2003-11-18 Micron Technology, Inc. Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation
US6906945B2 (en) * 2003-11-18 2005-06-14 Texas Instruments Incorporated Bitline precharge timing scheme to improve signal margin
SG11201404871TA (en) * 2012-02-16 2014-09-26 Zeno Semiconductor Inc Memory cell comprising first and second transistors and methods of operating
KR102314663B1 (ko) 2016-08-31 2021-10-21 마이크론 테크놀로지, 인크. 2 트랜지스터-1 커패시터 메모리를 포함하고 이를 액세스하기 위한 장치 및 방법
WO2018044485A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Ferroelectric memory cells
EP3507805B1 (en) 2016-08-31 2025-10-01 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
WO2018044487A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
JPH088339B2 (ja) * 1988-10-19 1996-01-29 株式会社東芝 半導体メモリ
US5297077A (en) * 1990-03-30 1994-03-22 Kabushiki Kaisha Toshiba Memory having ferroelectric capacitors polarized in nonvolatile mode
US5400275A (en) * 1990-06-08 1995-03-21 Kabushiki Kaisha Toshiba Semiconductor memory device using ferroelectric capacitor and having only one sense amplifier selected
US5381364A (en) * 1993-06-24 1995-01-10 Ramtron International Corporation Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation

Also Published As

Publication number Publication date
DE69322747D1 (de) 1999-02-04
US5467302A (en) 1995-11-14
CN1091544A (zh) 1994-08-31
CN1040706C (zh) 1998-11-11
KR970000870B1 (ko) 1997-01-20
EP0600434B1 (en) 1998-12-23
DE69322747T2 (de) 1999-06-24
KR940016262A (ko) 1994-07-22
EP0600434A3 (en) 1996-06-05
US5392234A (en) 1995-02-21
EP0600434A2 (en) 1994-06-08

Similar Documents

Publication Publication Date Title
TW323367B (enExample)
JP3856424B2 (ja) 半導体記憶装置
TW473716B (en) Ferroelectric memory and semiconductor memory
US7426130B2 (en) Ferroelectric RAM device and driving method
JP3191549B2 (ja) 半導体メモリ装置
US7173844B2 (en) Device and method for generating reference voltage in Ferroelectric Random Access Memory (FRAM)
JP3848772B2 (ja) 強誘電体ランダムアクセスメモリ装置及びメモリセルのデータ書込／読出方法
TW405120B (en) Semiconductor memory device
JP4049519B2 (ja) 強誘電体記憶装置
JPH11260066A (ja) 強誘電体メモリセルをもったメモリ及び強誘電体メモリセルの読出し方法
TW200426836A (en) Bias sensing in DRAM sense amplifiers
JPH1116377A (ja) 強誘電体メモリ装置
US7468900B2 (en) Semiconductor memory device having a bitline amplified to a positive voltage and a negative voltage
TWI255460B (en) Increasing the read signal in ferroelectric memories
TW446948B (en) Non-volatile semiconductor memory device
CN100490012C (zh) 半导体存储装置及其驱动方法
US6809954B1 (en) Circuit and method for reducing access transistor gate oxide stress
JP3728194B2 (ja) 読み出し回路
US6906945B2 (en) Bitline precharge timing scheme to improve signal margin
EP1081713A1 (en) Ferroelectric memory device with internally lowered supply voltage
JP3189540B2 (ja) 半導体メモリ装置
TW422987B (en) Semiconductor memory
TW426855B (en) A static random access memory with rewriting circuit
JP4079910B2 (ja) 強誘電体メモリ
JP2828530B2 (ja) 不揮発性記憶装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees