CN1040706C - 半导体存储装置 - Google Patents

半导体存储装置 Download PDF

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Publication number
CN1040706C
CN1040706C CN93112773A CN93112773A CN1040706C CN 1040706 C CN1040706 C CN 1040706C CN 93112773 A CN93112773 A CN 93112773A CN 93112773 A CN93112773 A CN 93112773A CN 1040706 C CN1040706 C CN 1040706C
Authority
CN
China
Prior art keywords
logic voltage
memory cell
bit line
plate
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN93112773A
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English (en)
Chinese (zh)
Other versions
CN1091544A (zh
Inventor
平野博茂
角辰己
森脇信行
中根让治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN1091544A publication Critical patent/CN1091544A/zh
Application granted granted Critical
Publication of CN1040706C publication Critical patent/CN1040706C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
CN93112773A 1992-12-02 1993-12-02 半导体存储装置 Expired - Fee Related CN1040706C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP322983/92 1992-12-02
JP32298392 1992-12-02

Publications (2)

Publication Number Publication Date
CN1091544A CN1091544A (zh) 1994-08-31
CN1040706C true CN1040706C (zh) 1998-11-11

Family

ID=18149835

Family Applications (1)

Application Number Title Priority Date Filing Date
CN93112773A Expired - Fee Related CN1040706C (zh) 1992-12-02 1993-12-02 半导体存储装置

Country Status (6)

Country Link
US (2) US5392234A (enExample)
EP (1) EP0600434B1 (enExample)
KR (1) KR970000870B1 (enExample)
CN (1) CN1040706C (enExample)
DE (1) DE69322747T2 (enExample)
TW (1) TW323367B (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07111085A (ja) * 1993-10-14 1995-04-25 Sharp Corp 不揮発性半導体記憶装置
EP0663666B1 (de) * 1994-01-12 1999-03-03 Siemens Aktiengesellschaft Integrierte Halbleiterspeicherschaltung und Verfahren zu ihrem Betrieb
JP3218844B2 (ja) * 1994-03-22 2001-10-15 松下電器産業株式会社 半導体メモリ装置
TW378323B (en) * 1994-09-22 2000-01-01 Matsushita Electric Industrial Co Ltd Ferroelectric memory device
JPH08115265A (ja) * 1994-10-15 1996-05-07 Toshiba Corp 半導体記憶装置及びその製造方法
JP3183076B2 (ja) * 1994-12-27 2001-07-03 日本電気株式会社 強誘電体メモリ装置
JP3127751B2 (ja) * 1995-01-04 2001-01-29 日本電気株式会社 強誘電体メモリ装置およびその動作制御方法
JPH08203266A (ja) * 1995-01-27 1996-08-09 Nec Corp 強誘電体メモリ装置
US5530668A (en) * 1995-04-12 1996-06-25 Ramtron International Corporation Ferroelectric memory sensing scheme using bit lines precharged to a logic one voltage
US5619447A (en) * 1995-05-02 1997-04-08 Motorola, Inc. Ferro-electric memory array architecture and method for forming the same
KR100243883B1 (ko) * 1995-08-02 2000-02-01 모리시타 요이찌 강유전체 메모리 장치
SG79200A1 (en) * 1995-08-21 2001-03-20 Matsushita Electric Industrial Co Ltd Ferroelectric memory devices and method for testing them
JPH09120685A (ja) * 1995-10-24 1997-05-06 Sony Corp 強誘電体記憶装置
US5737260A (en) * 1996-03-27 1998-04-07 Sharp Kabushiki Kaisha Dual mode ferroelectric memory reference scheme
WO1998056003A1 (fr) * 1997-06-05 1998-12-10 Matsushita Electronics Corporation Dispositif a memoire ferroelectrique et son procede de commande
KR100363102B1 (ko) * 1998-07-15 2003-02-19 주식회사 하이닉스반도체 강유전체 메모리
KR100389130B1 (ko) * 2001-04-25 2003-06-25 삼성전자주식회사 2비트 동작의 2트랜지스터를 구비한 불휘발성 메모리소자
US6649453B1 (en) * 2002-08-29 2003-11-18 Micron Technology, Inc. Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation
US6906945B2 (en) * 2003-11-18 2005-06-14 Texas Instruments Incorporated Bitline precharge timing scheme to improve signal margin
EP2815402B1 (en) * 2012-02-16 2020-11-25 Zeno Semiconductor , Inc. Memory cell comprising first and second transistors and methods of operating
KR102227270B1 (ko) 2016-08-31 2021-03-15 마이크론 테크놀로지, 인크. 강유전 메모리 셀
WO2018044486A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
SG11201901211XA (en) 2016-08-31 2019-03-28 Micron Technology Inc Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory
EP3507807A4 (en) 2016-08-31 2020-04-29 Micron Technology, Inc. APPARATUSES AND METHODS COMPRISING AND ACCESSING A TWO-TRANSISTOR MEMORY AND A CAPACITOR
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088339B2 (ja) * 1988-10-19 1996-01-29 株式会社東芝 半導体メモリ
DE4110407A1 (de) * 1990-03-30 1991-10-02 Toshiba Kawasaki Kk Halbleiter-speicheranordnung
US5400275A (en) * 1990-06-08 1995-03-21 Kabushiki Kaisha Toshiba Semiconductor memory device using ferroelectric capacitor and having only one sense amplifier selected
US5381364A (en) * 1993-06-24 1995-01-10 Ramtron International Corporation Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory

Also Published As

Publication number Publication date
CN1091544A (zh) 1994-08-31
US5392234A (en) 1995-02-21
EP0600434B1 (en) 1998-12-23
KR940016262A (ko) 1994-07-22
KR970000870B1 (ko) 1997-01-20
US5467302A (en) 1995-11-14
TW323367B (enExample) 1997-12-21
EP0600434A2 (en) 1994-06-08
EP0600434A3 (en) 1996-06-05
DE69322747D1 (de) 1999-02-04
DE69322747T2 (de) 1999-06-24

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Granted publication date: 19981111

Termination date: 20101202