DE69321744T2 - Halbleiterspeicher mit einem Multiplexer zur Auswahl eines Ausgangs zu einem redundanten Speicherszugriff - Google Patents

Halbleiterspeicher mit einem Multiplexer zur Auswahl eines Ausgangs zu einem redundanten Speicherszugriff

Info

Publication number
DE69321744T2
DE69321744T2 DE69321744T DE69321744T DE69321744T2 DE 69321744 T2 DE69321744 T2 DE 69321744T2 DE 69321744 T DE69321744 T DE 69321744T DE 69321744 T DE69321744 T DE 69321744T DE 69321744 T2 DE69321744 T2 DE 69321744T2
Authority
DE
Germany
Prior art keywords
redundant
column
input
multiplexer
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69321744T
Other languages
English (en)
Other versions
DE69321744D1 (de
Inventor
David Charles Mcclure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
STMicroelectronics lnc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics lnc USA filed Critical STMicroelectronics lnc USA
Application granted granted Critical
Publication of DE69321744D1 publication Critical patent/DE69321744D1/de
Publication of DE69321744T2 publication Critical patent/DE69321744T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
DE69321744T 1992-01-31 1993-01-27 Halbleiterspeicher mit einem Multiplexer zur Auswahl eines Ausgangs zu einem redundanten Speicherszugriff Expired - Fee Related DE69321744T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/830,131 US5262994A (en) 1992-01-31 1992-01-31 Semiconductor memory with a multiplexer for selecting an output for a redundant memory access

Publications (2)

Publication Number Publication Date
DE69321744D1 DE69321744D1 (de) 1998-12-03
DE69321744T2 true DE69321744T2 (de) 1999-03-18

Family

ID=25256378

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69321744T Expired - Fee Related DE69321744T2 (de) 1992-01-31 1993-01-27 Halbleiterspeicher mit einem Multiplexer zur Auswahl eines Ausgangs zu einem redundanten Speicherszugriff

Country Status (4)

Country Link
US (1) US5262994A (de)
EP (1) EP0554053B1 (de)
JP (1) JPH06203599A (de)
DE (1) DE69321744T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0831573B2 (ja) * 1992-10-01 1996-03-27 日本電気株式会社 ダイナミックｒａｍ
JP2991575B2 (ja) * 1992-10-08 1999-12-20 沖電気工業株式会社 半導体集積回路
US5422850A (en) * 1993-07-12 1995-06-06 Texas Instruments Incorporated Semiconductor memory device and defective memory cell repair circuit
EP0646866A3 (de) * 1993-09-30 1998-05-27 STMicroelectronics, Inc. Hauptfreigabe für Zeilenredundanzdekodierer
US5491444A (en) * 1993-12-28 1996-02-13 Sgs-Thomson Microelectronics, Inc. Fuse circuit with feedback disconnect
US5579326A (en) * 1994-01-31 1996-11-26 Sgs-Thomson Microelectronics, Inc. Method and apparatus for programming signal timing
US5493537A (en) * 1994-02-28 1996-02-20 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with edge transition detection pulse disable
US5446401A (en) * 1994-03-13 1995-08-29 Advanced Micro Devices, Inc. Synchronous dual word decoding using PLA
US5506518A (en) * 1994-09-20 1996-04-09 Xilinx, Inc. Antifuse-based programmable logic circuit
US5528539A (en) * 1994-09-29 1996-06-18 Micron Semiconductor, Inc. High speed global row redundancy system
US5682496A (en) 1995-02-10 1997-10-28 Micron Quantum Devices, Inc. Filtered serial event controlled command port for memory
ATE218003T1 (de) * 1995-02-10 2002-06-15 Micron Technology Inc Schneller leseverstärker für einen flash-speicher
US6108237A (en) 1997-07-17 2000-08-22 Micron Technology, Inc. Fast-sensing amplifier for flash memory
US5627786A (en) * 1995-02-10 1997-05-06 Micron Quantum Devices, Inc. Parallel processing redundancy scheme for faster access times and lower die area
US5612918A (en) * 1995-12-29 1997-03-18 Sgs-Thomson Microelectronics, Inc. Redundancy architecture
US5771195A (en) * 1995-12-29 1998-06-23 Sgs-Thomson Microelectronics, Inc. Circuit and method for replacing a defective memory cell with a redundant memory cell
US6037799A (en) * 1995-12-29 2000-03-14 Stmicroelectronics, Inc. Circuit and method for selecting a signal
US5841709A (en) * 1995-12-29 1998-11-24 Stmicroelectronics, Inc. Memory having and method for testing redundant memory cells
US5790462A (en) * 1995-12-29 1998-08-04 Sgs-Thomson Microelectronics, Inc. Redundancy control
US5671189A (en) * 1996-05-28 1997-09-23 Etron Technology, Inc. Low standby power redundancy circuit
US5953745A (en) * 1996-11-27 1999-09-14 International Business Machines Corporation Redundant memory array
US5859562A (en) * 1996-12-24 1999-01-12 Actel Corporation Programming circuit for antifuses using bipolar and SCR devices
US5896046A (en) * 1997-01-27 1999-04-20 International Business Machines Corporation Latch structure for ripple domino logic
US5909049A (en) 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
KR100271625B1 (ko) * 1997-04-25 2000-12-01 김영환 어드레스 천이 합성회로
US5952852A (en) * 1997-07-02 1999-09-14 Actel Corporation Fast wide decode in an FPGA using probe circuit
US6058052A (en) * 1997-08-21 2000-05-02 Cypress Semiconductor Corp. Redundancy scheme providing improvements in redundant circuit access time and integrated circuit layout area
US5933370A (en) * 1998-01-09 1999-08-03 Information Storage Devices, Inc. Trimbit circuit for flash memory
US6205515B1 (en) * 1998-03-16 2001-03-20 Winbond Electronic Corporation Column redundancy circuitry with reduced time delay
US6072735A (en) * 1998-06-22 2000-06-06 Lucent Technologies, Inc. Built-in redundancy architecture for computer memories
DE19833068A1 (de) * 1998-07-22 1999-11-04 Siemens Ag Endstufe für einen Decoder
US6424161B2 (en) * 1998-09-03 2002-07-23 Micron Technology, Inc. Apparatus and method for testing fuses
US6026037A (en) * 1999-02-01 2000-02-15 Utron Technology Inc. Repair circuit of memory cell array
DE10002139A1 (de) * 2000-01-19 2001-08-02 Infineon Technologies Ag Datenspeicher
US6912170B1 (en) 2000-03-14 2005-06-28 Micron Technology, Inc. Method and apparatus for permanent electrical removal of an integrated circuit output after packaging
KR100425456B1 (ko) * 2001-08-02 2004-03-30 삼성전자주식회사 메이크-링크를 구비하는 퓨즈 박스, 이를 구비하는 리던던트 어드레스 디코더 및 메모리 셀 대체방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4281398A (en) * 1980-02-12 1981-07-28 Mostek Corporation Block redundancy for memory array
US4471472A (en) * 1982-02-05 1984-09-11 Advanced Micro Devices, Inc. Semiconductor memory utilizing an improved redundant circuitry configuration
US4573146A (en) * 1982-04-20 1986-02-25 Mostek Corporation Testing and evaluation of a semiconductor memory containing redundant memory elements
US4601019B1 (en) * 1983-08-31 1997-09-30 Texas Instruments Inc Memory with redundancy
US4689494A (en) * 1986-09-18 1987-08-25 Advanced Micro Devices, Inc. Redundancy enable/disable circuit
US4791615A (en) * 1986-12-22 1988-12-13 Motorola, Inc. Memory with redundancy and predecoded signals
JPH0235699A (ja) * 1988-07-26 1990-02-06 Nec Corp 化合物半導体メモリデバイス

Also Published As

Publication number Publication date
EP0554053A3 (en) 1994-12-14
JPH06203599A (ja) 1994-07-22
EP0554053B1 (de) 1998-10-28
US5262994A (en) 1993-11-16
EP0554053A2 (de) 1993-08-04
DE69321744D1 (de) 1998-12-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee