JPS56134390A - Rom element - Google Patents
Rom elementInfo
- Publication number
- JPS56134390A JPS56134390A JP3672580A JP3672580A JPS56134390A JP S56134390 A JPS56134390 A JP S56134390A JP 3672580 A JP3672580 A JP 3672580A JP 3672580 A JP3672580 A JP 3672580A JP S56134390 A JPS56134390 A JP S56134390A
- Authority
- JP
- Japan
- Prior art keywords
- write data
- latch
- write
- data
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
Landscapes
- Read Only Memory (AREA)
Abstract
PURPOSE:To shorten the time required to write data by holding write data in a latch group and by writing it in a memory cell, which correspond to data equivalent to not less than one word, at a time. CONSTITUTION:Write data is applied to input-output terminals O1/I1... and while address bit A0 is set to ''0'', a write selection signal and latch set signal phi0 are turned on, so that the write data will be stored in latch groups L11... at odd-numbered sides. Next, when bit A0 is set to ''1'' for different write data, the write data is stored in latch groups L12... at odd-numbered sides. Thus, data equivalent to not less than one word, e.g. two words is written in both those latch groups and the write time of ROM is shortened.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3672580A JPS56134390A (en) | 1980-03-21 | 1980-03-21 | Rom element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3672580A JPS56134390A (en) | 1980-03-21 | 1980-03-21 | Rom element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56134390A true JPS56134390A (en) | 1981-10-21 |
Family
ID=12477712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3672580A Pending JPS56134390A (en) | 1980-03-21 | 1980-03-21 | Rom element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56134390A (en) |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5881798U (en) * | 1981-11-25 | 1983-06-02 | 日本電気株式会社 | PROM writer |
JPS5995498U (en) * | 1982-12-20 | 1984-06-28 | 日本電気株式会社 | Storage device |
JPS59152592A (en) * | 1983-02-21 | 1984-08-31 | Hitachi Ltd | Programmable rom |
JPS6038800A (en) * | 1983-08-10 | 1985-02-28 | Mitsubishi Electric Corp | Semiconductor storage device |
US4937770A (en) * | 1986-02-07 | 1990-06-26 | Teradyne, Inc. | Simulation system |
US4984212A (en) * | 1984-09-26 | 1991-01-08 | Hitachi, Ltd. | Semiconductor memory |
US4996669A (en) * | 1989-03-08 | 1991-02-26 | Kabushiki Kaisha Toshiba | Electrically erasable programmable read-only memory with NAND memory cell structure |
US5043942A (en) * | 1989-08-31 | 1991-08-27 | Kabushiki Kaisha Toshiba | Nand cell type programmable read-only memory with common control gate driver circuit |
US5088060A (en) * | 1989-03-08 | 1992-02-11 | Kabushiki Kaisha Toshiba | Electrically erasable programmable read-only memory with NAND memory cell structure |
US5101379A (en) * | 1986-05-27 | 1992-03-31 | Seeq Technology, Incorporated | Apparatus for page mode programming of an EEPROM cell array with false loading protection |
US5134583A (en) * | 1988-11-22 | 1992-07-28 | Hitachi, Ltd. | Nonvolatile semiconductor memory device having redundant data lines and page mode programming |
US5136546A (en) * | 1984-09-26 | 1992-08-04 | Hitachi, Ltd. | Semiconductor memory |
EP0508552A2 (en) * | 1988-10-24 | 1992-10-14 | Kabushiki Kaisha Toshiba | Programmable semiconductor memory |
US5247480A (en) * | 1989-05-02 | 1993-09-21 | Kabushiki Kaisha Toshiba | Electrically erasable progammable read-only memory with nand cell blocks |
JPH0676982A (en) * | 1992-08-25 | 1994-03-18 | Origin Electric Co Ltd | Monotank x-ray power supply device |
US5313432A (en) * | 1990-05-23 | 1994-05-17 | Texas Instruments Incorporated | Segmented, multiple-decoder memory array and method for programming a memory array |
US5313420A (en) * | 1987-04-24 | 1994-05-17 | Kabushiki Kaisha Toshiba | Programmable semiconductor memory |
US5397723A (en) * | 1990-07-13 | 1995-03-14 | Kabushiki Kaisha Toshiba | Process for forming arrayed field effect transistors highly integrated on substrate |
US5508957A (en) * | 1987-09-18 | 1996-04-16 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-through |
JP2003051197A (en) * | 2001-08-06 | 2003-02-21 | Matsushita Electric Ind Co Ltd | Semiconductor memory device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50109636A (en) * | 1974-01-29 | 1975-08-28 | ||
JPS52130536A (en) * | 1976-04-26 | 1977-11-01 | Toshiba Corp | Semiconductor memory unit |
-
1980
- 1980-03-21 JP JP3672580A patent/JPS56134390A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50109636A (en) * | 1974-01-29 | 1975-08-28 | ||
JPS52130536A (en) * | 1976-04-26 | 1977-11-01 | Toshiba Corp | Semiconductor memory unit |
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5881798U (en) * | 1981-11-25 | 1983-06-02 | 日本電気株式会社 | PROM writer |
JPS5995498U (en) * | 1982-12-20 | 1984-06-28 | 日本電気株式会社 | Storage device |
JPS59152592A (en) * | 1983-02-21 | 1984-08-31 | Hitachi Ltd | Programmable rom |
JPS6038800A (en) * | 1983-08-10 | 1985-02-28 | Mitsubishi Electric Corp | Semiconductor storage device |
JPH0140439B2 (en) * | 1983-08-10 | 1989-08-29 | Mitsubishi Electric Corp | |
US5136546A (en) * | 1984-09-26 | 1992-08-04 | Hitachi, Ltd. | Semiconductor memory |
US4984212A (en) * | 1984-09-26 | 1991-01-08 | Hitachi, Ltd. | Semiconductor memory |
US4937770A (en) * | 1986-02-07 | 1990-06-26 | Teradyne, Inc. | Simulation system |
US5101379A (en) * | 1986-05-27 | 1992-03-31 | Seeq Technology, Incorporated | Apparatus for page mode programming of an EEPROM cell array with false loading protection |
US6728139B2 (en) | 1987-04-24 | 2004-04-27 | Kabushiki Kaisha Toshiba | Programmable semiconductor memory |
US6434043B2 (en) | 1987-04-24 | 2002-08-13 | Kabushiki Kaisha Toshiba | Programmable semiconductor memory array having series-connected memory |
US5812453A (en) * | 1987-04-24 | 1998-09-22 | Kabushiki Kaisha Toshiba | Programmable semiconductor memory |
US5313420A (en) * | 1987-04-24 | 1994-05-17 | Kabushiki Kaisha Toshiba | Programmable semiconductor memory |
US5508957A (en) * | 1987-09-18 | 1996-04-16 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-through |
EP0508552A2 (en) * | 1988-10-24 | 1992-10-14 | Kabushiki Kaisha Toshiba | Programmable semiconductor memory |
US5134583A (en) * | 1988-11-22 | 1992-07-28 | Hitachi, Ltd. | Nonvolatile semiconductor memory device having redundant data lines and page mode programming |
US4996669A (en) * | 1989-03-08 | 1991-02-26 | Kabushiki Kaisha Toshiba | Electrically erasable programmable read-only memory with NAND memory cell structure |
US5088060A (en) * | 1989-03-08 | 1992-02-11 | Kabushiki Kaisha Toshiba | Electrically erasable programmable read-only memory with NAND memory cell structure |
US5247480A (en) * | 1989-05-02 | 1993-09-21 | Kabushiki Kaisha Toshiba | Electrically erasable progammable read-only memory with nand cell blocks |
US5043942A (en) * | 1989-08-31 | 1991-08-27 | Kabushiki Kaisha Toshiba | Nand cell type programmable read-only memory with common control gate driver circuit |
US5313432A (en) * | 1990-05-23 | 1994-05-17 | Texas Instruments Incorporated | Segmented, multiple-decoder memory array and method for programming a memory array |
US5397723A (en) * | 1990-07-13 | 1995-03-14 | Kabushiki Kaisha Toshiba | Process for forming arrayed field effect transistors highly integrated on substrate |
JPH0676982A (en) * | 1992-08-25 | 1994-03-18 | Origin Electric Co Ltd | Monotank x-ray power supply device |
JP2003051197A (en) * | 2001-08-06 | 2003-02-21 | Matsushita Electric Ind Co Ltd | Semiconductor memory device |
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