DE69320557D1 - Mehr-Gebiet Plasma-Behandlungsvorrichtung - Google Patents

Mehr-Gebiet Plasma-Behandlungsvorrichtung

Info

Publication number
DE69320557D1
DE69320557D1 DE69320557T DE69320557T DE69320557D1 DE 69320557 D1 DE69320557 D1 DE 69320557D1 DE 69320557 T DE69320557 T DE 69320557T DE 69320557 T DE69320557 T DE 69320557T DE 69320557 D1 DE69320557 D1 DE 69320557D1
Authority
DE
Germany
Prior art keywords
treatment device
plasma treatment
area plasma
area
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69320557T
Other languages
English (en)
Other versions
DE69320557T2 (de
Inventor
Mehrdad M Moslehi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69320557D1 publication Critical patent/DE69320557D1/de
Publication of DE69320557T2 publication Critical patent/DE69320557T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405Cleaning of reactor or parts inside the reactor by using reactive gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3266Magnetic control means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853Hygiene
    • H01J37/32862In situ cleaning of vessels and/or internal parts
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/916Differential etching apparatus including chamber cleaning means or shield for preventing deposits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
DE69320557T 1992-06-24 1993-06-15 Mehr-Gebiet Plasma-Behandlungsvorrichtung Expired - Fee Related DE69320557T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/903,621 US5252178A (en) 1992-06-24 1992-06-24 Multi-zone plasma processing method and apparatus

Publications (2)

Publication Number Publication Date
DE69320557D1 true DE69320557D1 (de) 1998-10-01
DE69320557T2 DE69320557T2 (de) 1999-04-01

Family

ID=25417800

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69320557T Expired - Fee Related DE69320557T2 (de) 1992-06-24 1993-06-15 Mehr-Gebiet Plasma-Behandlungsvorrichtung

Country Status (4)

Country Link
US (1) US5252178A (de)
EP (1) EP0578010B1 (de)
JP (1) JP3555966B2 (de)
DE (1) DE69320557T2 (de)

Families Citing this family (325)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2644912B2 (ja) * 1990-08-29 1997-08-25 株式会社日立製作所 真空処理装置及びその運転方法
KR930011413B1 (ko) 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
DE4118973C2 (de) * 1991-06-08 1999-02-04 Fraunhofer Ges Forschung Vorrichtung zur plasmaunterstützten Bearbeitung von Substraten und Verwendung dieser Vorrichtung
US5391855A (en) * 1991-08-01 1995-02-21 Komoto Tech, Inc. Apparatus for atmospheric plasma treatment of a sheet-like structure
US5286297A (en) * 1992-06-24 1994-02-15 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
US5686050A (en) * 1992-10-09 1997-11-11 The University Of Tennessee Research Corporation Method and apparatus for the electrostatic charging of a web or film
US7264850B1 (en) 1992-12-28 2007-09-04 Semiconductor Energy Laboratory Co., Ltd. Process for treating a substrate with a plasma
US5662770A (en) 1993-04-16 1997-09-02 Micron Technology, Inc. Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks
US5938854A (en) * 1993-05-28 1999-08-17 The University Of Tennessee Research Corporation Method and apparatus for cleaning surfaces with a glow discharge plasma at one atmosphere of pressure
US5865896A (en) * 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
US5565036A (en) * 1994-01-19 1996-10-15 Tel America, Inc. Apparatus and method for igniting plasma in a process module
EP0664347A3 (de) * 1994-01-25 1997-05-14 Applied Materials Inc Anlage zur Abscheidung einer gleichmässigen Schicht eines Werkstoffs auf ein Substrat.
JP3372647B2 (ja) * 1994-04-18 2003-02-04 キヤノン株式会社 プラズマ処理装置
DE69506619T2 (de) * 1994-06-02 1999-07-15 Applied Materials, Inc., Santa Clara, Calif. Induktiv gekoppelter Plasmareaktor mit einer Elektrode zur Erleichterung der Plasmazündung
US5514246A (en) * 1994-06-02 1996-05-07 Micron Technology, Inc. Plasma reactors and method of cleaning a plasma reactor
US5624592A (en) * 1994-10-19 1997-04-29 Cerberus Institute For Research And Development, Inc. Microwave facilitated atmospheric energy projection system
US5585012A (en) * 1994-12-15 1996-12-17 Applied Materials Inc. Self-cleaning polymer-free top electrode for parallel electrode etch operation
US5523261A (en) * 1995-02-28 1996-06-04 Micron Technology, Inc. Method of cleaning high density inductively coupled plasma chamber using capacitive coupling
US5955174A (en) * 1995-03-28 1999-09-21 The University Of Tennessee Research Corporation Composite of pleated and nonwoven webs
EP0801809A2 (de) 1995-06-19 1997-10-22 The University Of Tennessee Research Corporation Entladungsverfahren sowie elektroden zur erzeugung von plasma unter atmosphärendruck und materialen, die mit diesem verfahren behandelt werden
US6060397A (en) * 1995-07-14 2000-05-09 Applied Materials, Inc. Gas chemistry for improved in-situ cleaning of residue for a CVD apparatus
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
US5597438A (en) * 1995-09-14 1997-01-28 Siemens Aktiengesellschaft Etch chamber having three independently controlled electrodes
US5611426A (en) * 1995-10-12 1997-03-18 Point Group Corporation Packaging assembly for compact discs
JP2737720B2 (ja) * 1995-10-12 1998-04-08 日本電気株式会社 薄膜形成方法及び装置
EP0777258A3 (de) * 1995-11-29 1997-09-17 Applied Materials Inc Selbstreinigungsfähiger Plasmabearbeitungsreaktor
US5817534A (en) * 1995-12-04 1998-10-06 Applied Materials, Inc. RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers
US6116185A (en) * 1996-05-01 2000-09-12 Rietzel; James G. Gas injector for plasma enhanced chemical vapor deposition
US6500314B1 (en) * 1996-07-03 2002-12-31 Tegal Corporation Plasma etch reactor and method
US6048435A (en) 1996-07-03 2000-04-11 Tegal Corporation Plasma etch reactor and method for emerging films
US5976261A (en) * 1996-07-11 1999-11-02 Cvc Products, Inc. Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment
US6110540A (en) * 1996-07-12 2000-08-29 The Boc Group, Inc. Plasma apparatus and method
US5917285A (en) * 1996-07-24 1999-06-29 Georgia Tech Research Corporation Apparatus and method for reducing operating voltage in gas discharge devices
US6113731A (en) * 1997-01-02 2000-09-05 Applied Materials, Inc. Magnetically-enhanced plasma chamber with non-uniform magnetic field
US5904800A (en) * 1997-02-03 1999-05-18 Motorola, Inc. Semiconductor wafer processing chamber for reducing particles deposited onto the semiconductor wafer
US5945354A (en) * 1997-02-03 1999-08-31 Motorola, Inc. Method for reducing particles deposited onto a semiconductor wafer during plasma processing
US6054694A (en) * 1997-04-16 2000-04-25 Cerberus Institute For Research And Development, Inc. Microwave facilitated atmospheric energy projection system
JP3801730B2 (ja) 1997-05-09 2006-07-26 株式会社半導体エネルギー研究所 プラズマcvd装置及びそれを用いた薄膜形成方法
US6162705A (en) * 1997-05-12 2000-12-19 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6079426A (en) * 1997-07-02 2000-06-27 Applied Materials, Inc. Method and apparatus for determining the endpoint in a plasma cleaning process
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6103599A (en) * 1997-07-25 2000-08-15 Silicon Genesis Corporation Planarizing technique for multilayered substrates
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
JP3398027B2 (ja) * 1997-10-15 2003-04-21 株式会社荏原製作所 気相成長装置及びその洗浄方法
US6287990B1 (en) * 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
US6051073A (en) * 1998-02-11 2000-04-18 Silicon Genesis Corporation Perforated shield for plasma immersion ion implantation
US6228176B1 (en) 1998-02-11 2001-05-08 Silicon Genesis Corporation Contoured platen design for plasma immerson ion implantation
US6274459B1 (en) 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
US20030010453A1 (en) * 1998-03-18 2003-01-16 Jyunichi Tanaka Plasma processing apparatus and plasma processing method
US6111237A (en) * 1998-04-24 2000-08-29 Cerberus Institute For Research And Development, Inc. Microwave facilitated atmospheric energy projection system
JP3646968B2 (ja) * 1998-05-22 2005-05-11 信越化学工業株式会社 マグネトロンプラズマ用磁場発生装置
US6395640B2 (en) 1999-12-17 2002-05-28 Texas Instruments Incorporated Apparatus and method for selectivity restricting process fluid flow in semiconductor processing
US20020053694A1 (en) 1998-06-10 2002-05-09 Sutcliffe Victor C. Method of forming a memory cell with self-aligned contacts
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6095085A (en) * 1998-08-20 2000-08-01 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method
DE10022384B4 (de) * 1998-11-09 2004-07-22 Semikron Elektronik Gmbh Verfahren zur Passivierung einer schnellen Leistungsdiode
US6186154B1 (en) * 1998-12-07 2001-02-13 Taiwan Semiconductor Manufacturing Company Find end point of CLF3 clean by pressure change
US6458723B1 (en) 1999-06-24 2002-10-01 Silicon Genesis Corporation High temperature implant apparatus
JP2003506883A (ja) 1999-08-10 2003-02-18 シリコン ジェネシス コーポレイション 低打ち込みドーズ量を用いて多層基板を製造するための劈開プロセス
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6281146B1 (en) * 1999-09-15 2001-08-28 Taiwan Semiconductor Manufacturing Company Plasma enhanced chemical vapor deposition (PECVD) method for forming microelectronic layer with enhanced film thickness uniformity
US6291358B1 (en) 1999-10-15 2001-09-18 Micron Technology, Inc. Plasma deposition tool operating method
US8114245B2 (en) * 1999-11-26 2012-02-14 Tadahiro Ohmi Plasma etching device
US6537420B2 (en) 1999-12-17 2003-03-25 Texas Instruments Incorporated Method and apparatus for restricting process fluid flow within a showerhead assembly
US20030079983A1 (en) * 2000-02-25 2003-05-01 Maolin Long Multi-zone RF electrode for field/plasma uniformity control in capacitive plasma sources
US6502530B1 (en) * 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
JP2001338912A (ja) * 2000-05-29 2001-12-07 Tokyo Electron Ltd プラズマ処理装置および処理方法
US6494958B1 (en) 2000-06-29 2002-12-17 Applied Materials Inc. Plasma chamber support with coupled electrode
US6632322B1 (en) * 2000-06-30 2003-10-14 Lam Research Corporation Switched uniformity control
US6412437B1 (en) * 2000-08-18 2002-07-02 Micron Technology, Inc. Plasma enhanced chemical vapor deposition reactor and plasma enhanced chemical vapor deposition process
TW511398B (en) * 2000-09-12 2002-11-21 Tokyo Electron Ltd Apparatus and method to control the uniformity of plasma by reducing radial loss
US6471830B1 (en) 2000-10-03 2002-10-29 Veeco/Cvc, Inc. Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system
AUPR179500A0 (en) * 2000-11-30 2000-12-21 Saintech Pty Limited Ion source
US6576564B2 (en) 2000-12-07 2003-06-10 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method
US6930041B2 (en) * 2000-12-07 2005-08-16 Micron Technology, Inc. Photo-assisted method for semiconductor fabrication
US6598610B2 (en) * 2001-02-05 2003-07-29 Dalsa Semiconductor Inc. Method of depositing a thick dielectric film
US6602381B1 (en) 2001-04-30 2003-08-05 Lam Research Corporation Plasma confinement by use of preferred RF return path
US6596654B1 (en) 2001-08-24 2003-07-22 Novellus Systems, Inc. Gap fill for high aspect ratio structures
US6846745B1 (en) * 2001-08-03 2005-01-25 Novellus Systems, Inc. High-density plasma process for filling high aspect ratio structures
JP2003068705A (ja) * 2001-08-23 2003-03-07 Hitachi Ltd 半導体素子の製造方法
US7067440B1 (en) 2001-08-24 2006-06-27 Novellus Systems, Inc. Gap fill for high aspect ratio structures
JP3886424B2 (ja) * 2001-08-28 2007-02-28 鹿児島日本電気株式会社 基板処理装置及び方法
JP3971603B2 (ja) * 2001-12-04 2007-09-05 キヤノンアネルバ株式会社 絶縁膜エッチング装置及び絶縁膜エッチング方法
US6828241B2 (en) * 2002-01-07 2004-12-07 Applied Materials, Inc. Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source
US6869880B2 (en) * 2002-01-24 2005-03-22 Applied Materials, Inc. In situ application of etch back for improved deposition into high-aspect-ratio features
JP4109468B2 (ja) * 2002-03-05 2008-07-02 住友ゴム工業株式会社 自動二輪車用ラジアルタイヤ
FR2838020B1 (fr) * 2002-03-28 2004-07-02 Centre Nat Rech Scient Dispositif de confinement de plasma
JP3703780B2 (ja) * 2002-06-11 2005-10-05 株式会社シマノ 自転車用ハブブレーキ装置
US6767836B2 (en) * 2002-09-04 2004-07-27 Asm Japan K.K. Method of cleaning a CVD reaction chamber using an active oxygen species
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
US7122485B1 (en) 2002-12-09 2006-10-17 Novellus Systems, Inc. Deposition profile modification through process chemistry
US7037376B2 (en) 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
DE10317208A1 (de) * 2003-04-15 2004-11-04 Robert Bosch Gmbh Plasmadepositionsverfahren
KR20050004995A (ko) * 2003-07-01 2005-01-13 삼성전자주식회사 플라즈마를 이용하는 기판 가공 장치
US7595096B2 (en) * 2003-07-30 2009-09-29 Oc Oerlikon Balzers Ag Method of manufacturing vacuum plasma treated workpieces
US6829056B1 (en) 2003-08-21 2004-12-07 Michael Barnes Monitoring dimensions of features at different locations in the processing of substrates
US7344996B1 (en) 2005-06-22 2008-03-18 Novellus Systems, Inc. Helium-based etch process in deposition-etch-deposition gap fill
US7476621B1 (en) 2003-12-10 2009-01-13 Novellus Systems, Inc. Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill
US7163896B1 (en) 2003-12-10 2007-01-16 Novellus Systems, Inc. Biased H2 etch process in deposition-etch-deposition gap fill
US20050187374A1 (en) * 2004-02-20 2005-08-25 Bin Chen Polyester synthesis with enhanced titanium catalyst composition
US7244474B2 (en) 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7695590B2 (en) * 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7291360B2 (en) 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US20070066038A1 (en) 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
JP4550507B2 (ja) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7217658B1 (en) 2004-09-07 2007-05-15 Novellus Systems, Inc. Process modulation to prevent structure erosion during gap fill
US7176039B1 (en) 2004-09-21 2007-02-13 Novellus Systems, Inc. Dynamic modification of gap fill process characteristics
US7381451B1 (en) 2004-11-17 2008-06-03 Novellus Systems, Inc. Strain engineering—HDP thin film with tensile stress for FEOL and other applications
US7632375B2 (en) * 2004-12-30 2009-12-15 Lam Research Corporation Electrically enhancing the confinement of plasma
US7211525B1 (en) 2005-03-16 2007-05-01 Novellus Systems, Inc. Hydrogen treatment enhanced gap fill
US20070029193A1 (en) * 2005-08-03 2007-02-08 Tokyo Electron Limited Segmented biased peripheral electrode in plasma processing method and apparatus
US7524750B2 (en) 2006-04-17 2009-04-28 Applied Materials, Inc. Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD
US20070281106A1 (en) * 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US7482245B1 (en) 2006-06-20 2009-01-27 Novellus Systems, Inc. Stress profile modulation in STI gap fill
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US7939422B2 (en) * 2006-12-07 2011-05-10 Applied Materials, Inc. Methods of thin film process
US7758718B1 (en) * 2006-12-29 2010-07-20 Lam Research Corporation Reduced electric field arrangement for managing plasma confinement
JP2008187062A (ja) * 2007-01-31 2008-08-14 Hitachi High-Technologies Corp プラズマ処理装置
US20090120368A1 (en) * 2007-11-08 2009-05-14 Applied Materials, Inc. Rotating temperature controlled substrate pedestal for film uniformity
US7964040B2 (en) * 2007-11-08 2011-06-21 Applied Materials, Inc. Multi-port pumping system for substrate processing chambers
TWI488547B (zh) * 2007-12-25 2015-06-11 Applied Materials Inc 電漿室裝置
US8298625B2 (en) * 2008-01-31 2012-10-30 Applied Materials, Inc. Multiple phase RF power for electrode of plasma chamber
US8192806B1 (en) * 2008-02-19 2012-06-05 Novellus Systems, Inc. Plasma particle extraction process for PECVD
US20090277587A1 (en) * 2008-05-09 2009-11-12 Applied Materials, Inc. Flowable dielectric equipment and processes
US8133797B2 (en) * 2008-05-16 2012-03-13 Novellus Systems, Inc. Protective layer to enable damage free gap fill
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US20100098875A1 (en) * 2008-10-17 2010-04-22 Andreas Fischer Pre-coating and wafer-less auto-cleaning system and method
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
WO2010094002A2 (en) * 2009-02-13 2010-08-19 Applied Materials, Inc. Rf bus and rf return bus for plasma chamber electrode
US8312839B2 (en) * 2009-03-24 2012-11-20 Applied Materials, Inc. Mixing frequency at multiple feeding points
MX350703B (es) 2009-05-13 2017-09-14 Sio2 Medical Products Inc Metodo de gasificacion para inspeccionar una superficie revestida.
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
WO2011041332A2 (en) * 2009-09-29 2011-04-07 Applied Materials, Inc. Off-center ground return for rf-powered showerhead
JP5397215B2 (ja) * 2009-12-25 2014-01-22 ソニー株式会社 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム
KR101796656B1 (ko) * 2010-04-30 2017-11-13 어플라이드 머티어리얼스, 인코포레이티드 수직 인라인 화학기상증착 시스템
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US8741778B2 (en) 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
KR101893471B1 (ko) 2011-02-15 2018-08-30 어플라이드 머티어리얼스, 인코포레이티드 멀티존 플라즈마 생성을 위한 방법 및 장치
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
US8497211B2 (en) 2011-06-24 2013-07-30 Applied Materials, Inc. Integrated process modulation for PSG gapfill
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
WO2013070436A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Methods of reducing substrate dislocation during gapfill processing
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
CA2855353C (en) 2011-11-11 2021-01-19 Sio2 Medical Products, Inc. Passivation, ph protective or lubricity coating for pharmaceutical package, coating process and apparatus
US8808561B2 (en) 2011-11-15 2014-08-19 Lam Research Coporation Inert-dominant pulsing in plasma processing systems
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
EP2846755A1 (de) 2012-05-09 2015-03-18 SiO2 Medical Products, Inc. Saccharidschutzschicht für eine arzneimittelverpackung
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) * 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
EP2914762B1 (de) 2012-11-01 2020-05-13 SiO2 Medical Products, Inc. Verfahren zur inspektion einer beschichtung
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
WO2014078666A1 (en) 2012-11-16 2014-05-22 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
EP2925903B1 (de) 2012-11-30 2022-04-13 Si02 Medical Products, Inc. Steuerung der gleichförmigkeit der pecvg-ablagerung auf medizinischen spritzen, kartuschen und dergleichen
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US20160015898A1 (en) 2013-03-01 2016-01-21 Sio2 Medical Products, Inc. Plasma or cvd pre-treatment for lubricated pharmaceutical package, coating process and apparatus
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
KR102211788B1 (ko) 2013-03-11 2021-02-04 에스아이오2 메디컬 프로덕츠, 인크. 코팅된 패키징
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
US20160017490A1 (en) 2013-03-15 2016-01-21 Sio2 Medical Products, Inc. Coating method
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
EP3122917B1 (de) 2014-03-28 2020-05-06 SiO2 Medical Products, Inc. Antistatische beschichtungen für kunststoffbehälter
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
FR3035665A1 (fr) * 2015-04-28 2016-11-04 Yvon Sampeur Procede d’utilisation d’un dispositif pecvd pour la mise en oeuvre d’une phase de nettoyage par plasma et/ou d’une phase de depot par plasma, et dispositif epcvd correspondant
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
CA2995225C (en) 2015-08-18 2023-08-29 Sio2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US20210381107A1 (en) * 2020-06-03 2021-12-09 Micron Technology, Inc. Material deposition systems, and related methods and microelectronic devices
CN113061859B (zh) * 2021-03-19 2022-09-27 成都齐兴真空镀膜技术有限公司 一种用于x射线管阳极靶的金属涂层及其制备方法
CN114063479B (zh) * 2021-11-12 2024-01-23 华科电子股份有限公司 应用于蚀刻机的多路输出模块的射频电源控制方法及系统
WO2023245062A2 (en) * 2022-06-15 2023-12-21 Fuse Energy Technologies Corp. Multichannel plasma generation system and method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4464223A (en) * 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning
US4960488A (en) * 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
JPH029115A (ja) * 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
US5084125A (en) * 1989-09-12 1992-01-28 Matsushita Electric Industrial Co., Ltd. Apparatus and method for producing semiconductor substrate

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