DE69216304D1 - Verfahren zum Herstellen eines selbst-ausrichtenden, planaren, monolithischen integrierten Schaltkreises mit vertikalen Transistoren - Google Patents

Verfahren zum Herstellen eines selbst-ausrichtenden, planaren, monolithischen integrierten Schaltkreises mit vertikalen Transistoren

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Publication number
DE69216304D1
DE69216304D1 DE69216304T DE69216304T DE69216304D1 DE 69216304 D1 DE69216304 D1 DE 69216304D1 DE 69216304 T DE69216304 T DE 69216304T DE 69216304 T DE69216304 T DE 69216304T DE 69216304 D1 DE69216304 D1 DE 69216304D1
Authority
DE
Germany
Prior art keywords
aligning
planar
self
making
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69216304T
Other languages
English (en)
Other versions
DE69216304T2 (de
Inventor
Amolak R Ramde
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Application granted granted Critical
Publication of DE69216304D1 publication Critical patent/DE69216304D1/de
Publication of DE69216304T2 publication Critical patent/DE69216304T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H01L21/82285—Complementary vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/01—Bipolar transistors-ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE69216304T 1991-06-18 1992-05-01 Verfahren zum Herstellen eines selbst-ausrichtenden, planaren, monolithischen integrierten Schaltkreises mit vertikalen Transistoren Expired - Fee Related DE69216304T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/716,890 US5128272A (en) 1991-06-18 1991-06-18 Self-aligned planar monolithic integrated circuit vertical transistor process

Publications (2)

Publication Number Publication Date
DE69216304D1 true DE69216304D1 (de) 1997-02-13
DE69216304T2 DE69216304T2 (de) 1997-07-24

Family

ID=24879878

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69216304T Expired - Fee Related DE69216304T2 (de) 1991-06-18 1992-05-01 Verfahren zum Herstellen eines selbst-ausrichtenden, planaren, monolithischen integrierten Schaltkreises mit vertikalen Transistoren

Country Status (5)

Country Link
US (1) US5128272A (de)
EP (1) EP0519592B1 (de)
JP (1) JP3098848B2 (de)
KR (1) KR100222116B1 (de)
DE (1) DE69216304T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5358883A (en) * 1992-02-03 1994-10-25 Motorola, Inc. Lateral bipolar transistor
US5416687A (en) * 1992-06-23 1995-05-16 Delta Coventry Corporation Power factor correction circuit for AC to DC power supply
US5411900A (en) * 1993-03-05 1995-05-02 Deutsche Itt Industries, Gmbh Method of fabricating a monolithic integrated circuit with at least one CMOS field-effect transistor and one NPN bipolar transistor
KR0138352B1 (ko) * 1993-12-17 1998-04-28 김광호 반도체 장치 및 그의 제조방법
US6437381B1 (en) 2000-04-27 2002-08-20 International Business Machines Corporation Semiconductor memory device with reduced orientation-dependent oxidation in trench structures
US20020118850A1 (en) * 2000-08-02 2002-08-29 Yeh Jer-Liang (Andrew) Micromachine directional microphone and associated method
US9805935B2 (en) 2015-12-31 2017-10-31 International Business Machines Corporation Bottom source/drain silicidation for vertical field-effect transistor (FET)
US10002962B2 (en) 2016-04-27 2018-06-19 International Business Machines Corporation Vertical FET structure
US9812567B1 (en) 2016-05-05 2017-11-07 International Business Machines Corporation Precise control of vertical transistor gate length
US9653575B1 (en) 2016-05-09 2017-05-16 International Business Machines Corporation Vertical transistor with a body contact for back-biasing
US9842931B1 (en) 2016-06-09 2017-12-12 International Business Machines Corporation Self-aligned shallow trench isolation and doping for vertical fin transistors
US9853127B1 (en) 2016-06-22 2017-12-26 International Business Machines Corporation Silicidation of bottom source/drain sheet using pinch-off sacrificial spacer process
US10217863B2 (en) 2016-06-28 2019-02-26 International Business Machines Corporation Fabrication of a vertical fin field effect transistor with an asymmetric gate structure
US10243073B2 (en) 2016-08-19 2019-03-26 International Business Machines Corporation Vertical channel field-effect transistor (FET) process compatible long channel transistors
US9704990B1 (en) 2016-09-19 2017-07-11 International Business Machines Corporation Vertical FET with strained channel
US10312346B2 (en) 2016-10-19 2019-06-04 International Business Machines Corporation Vertical transistor with variable gate length

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110126A (en) * 1977-08-31 1978-08-29 International Business Machines Corporation NPN/PNP Fabrication process with improved alignment
JPS56115525A (en) * 1980-02-18 1981-09-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US4309812A (en) * 1980-03-03 1982-01-12 International Business Machines Corporation Process for fabricating improved bipolar transistor utilizing selective etching
DE3314450A1 (de) * 1983-04-21 1984-10-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen
US4940671A (en) * 1986-04-18 1990-07-10 National Semiconductor Corporation High voltage complementary NPN/PNP process
US4933295A (en) * 1987-05-08 1990-06-12 Raytheon Company Method of forming a bipolar transistor having closely spaced device regions
IT1231913B (it) * 1987-10-23 1992-01-15 Sgs Microelettronica Spa Procedimento di fabbricazione di transistori ad alta frequenza.
EP0375323A1 (de) * 1988-12-22 1990-06-27 Texas Instruments Incorporated Ein vertikaler Hochleistungs-Bipolartransistor, Kompatibel mit einer hochwertigen ECL-Bipolar-Technologie und dessen Herstellungsverfahren
US4910160A (en) * 1989-06-06 1990-03-20 National Semiconductor Corporation High voltage complementary NPN/PNP process

Also Published As

Publication number Publication date
US5128272A (en) 1992-07-07
EP0519592A3 (en) 1993-10-13
DE69216304T2 (de) 1997-07-24
EP0519592B1 (de) 1997-01-02
KR100222116B1 (ko) 1999-10-01
JPH05160353A (ja) 1993-06-25
JP3098848B2 (ja) 2000-10-16
KR930001456A (ko) 1993-01-16
EP0519592A2 (de) 1992-12-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee