DE69209488D1 - Verfahren zur Herstellung eines Halbleiterplätchens und Substrat für die Herstellung eines Halbleiters - Google Patents

Verfahren zur Herstellung eines Halbleiterplätchens und Substrat für die Herstellung eines Halbleiters

Info

Publication number
DE69209488D1
DE69209488D1 DE69209488T DE69209488T DE69209488D1 DE 69209488 D1 DE69209488 D1 DE 69209488D1 DE 69209488 T DE69209488 T DE 69209488T DE 69209488 T DE69209488 T DE 69209488T DE 69209488 D1 DE69209488 D1 DE 69209488D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor
substrate
semiconductor die
die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69209488T
Other languages
English (en)
Inventor
Motoharu Miyashita
Norio Hayafuji
Yutaka Mihashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69209488D1 publication Critical patent/DE69209488D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y10T428/219—Edge structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24298—Noncircular aperture [e.g., slit, diamond, rectangular, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24298—Noncircular aperture [e.g., slit, diamond, rectangular, etc.]
    • Y10T428/24306—Diamond or hexagonal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24298—Noncircular aperture [e.g., slit, diamond, rectangular, etc.]
    • Y10T428/24314—Slit or elongated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/2457—Parallel ribs and/or grooves
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24777—Edge feature

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE69209488T 1992-03-12 1992-11-25 Verfahren zur Herstellung eines Halbleiterplätchens und Substrat für die Herstellung eines Halbleiters Expired - Lifetime DE69209488D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8941692A JPH05259016A (ja) 1992-03-12 1992-03-12 ウエハ作製用基板及び半導体ウエハの製造方法

Publications (1)

Publication Number Publication Date
DE69209488D1 true DE69209488D1 (de) 1996-05-02

Family

ID=13970054

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69209488T Expired - Lifetime DE69209488D1 (de) 1992-03-12 1992-11-25 Verfahren zur Herstellung eines Halbleiterplätchens und Substrat für die Herstellung eines Halbleiters

Country Status (4)

Country Link
US (2) US5279077A (de)
EP (1) EP0559986B1 (de)
JP (1) JPH05259016A (de)
DE (1) DE69209488D1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5529051A (en) * 1994-07-26 1996-06-25 At&T Corp. Method of preparing silicon wafers
JPH08222798A (ja) * 1995-02-15 1996-08-30 Mitsubishi Electric Corp 半導体レーザの製造方法
JP3397968B2 (ja) * 1996-03-29 2003-04-21 信越半導体株式会社 半導体単結晶インゴットのスライス方法
JP3213563B2 (ja) * 1997-03-11 2001-10-02 株式会社スーパーシリコン研究所 ノッチレスウェーハの製造方法
JP3368799B2 (ja) * 1997-05-22 2003-01-20 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体ウェハおよびその製造方法
GB9819006D0 (en) * 1998-09-02 1998-10-21 Renishaw Plc Optical filter
JP2001250799A (ja) * 2000-03-03 2001-09-14 Mitsubishi Electric Corp 半導体ウェハおよび半導体装置
US6554687B1 (en) * 2000-09-27 2003-04-29 Virginia Semiconductor, Inc. Precise crystallographic-orientation alignment mark for a semiconductor wafer
JP4455804B2 (ja) * 2002-05-08 2010-04-21 株式会社ワイ・ワイ・エル インゴットの切断方法と切断装置及びウェーハ並びに太陽電池の製造方法
US20040062902A1 (en) * 2002-09-27 2004-04-01 Henry Keith S. Dual denier tufted carpet construction
JP4630970B2 (ja) * 2003-04-17 2011-02-09 並木精密宝石株式会社 サファイヤ基板及びその製造方法
JP4678137B2 (ja) * 2004-04-20 2011-04-27 住友電気工業株式会社 化合物単結晶の製造方法
US7566949B2 (en) * 2006-04-28 2009-07-28 International Business Machines Corporation High performance 3D FET structures, and methods for forming the same using preferential crystallographic etching
JP2007329391A (ja) * 2006-06-09 2007-12-20 Disco Abrasive Syst Ltd 半導体ウェーハの結晶方位指示マーク検出機構
KR20080023890A (ko) * 2006-09-12 2008-03-17 삼성전자주식회사 반도체 제조설비의 웨이퍼 정렬장치
US8389099B1 (en) 2007-06-01 2013-03-05 Rubicon Technology, Inc. Asymmetrical wafer configurations and method for creating the same
DE102007056115A1 (de) 2007-11-15 2009-05-20 Freiberger Compound Materials Gmbh Verfahren zum Trennen von Einkristallen
US9156187B2 (en) * 2011-12-29 2015-10-13 Sunedison Semiconductor Ltd. Methods for mounting an ingot on a wire saw
CN103060920A (zh) * 2013-01-05 2013-04-24 武汉电信器件有限公司 一种高精度无污染的半导体晶片解理方法
DE102013219468B4 (de) * 2013-09-26 2015-04-23 Siltronic Ag Verfahren zum gleichzeitigen Trennen einer Vielzahl von Scheiben von einem Werkstück
US9263586B2 (en) 2014-06-06 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum well fin-like field effect transistor (QWFinFET) having a two-section combo QW structure
JP6063436B2 (ja) * 2014-12-18 2017-01-18 Ｄｏｗａエレクトロニクス株式会社 ウェハ群、ウェハの製造装置、およびウェハの製造方法
JP6701417B1 (ja) * 2019-07-26 2020-05-27 Ｊｘ金属株式会社 リン化インジウム基板、及びリン化インジウム基板の製造方法
JP6701418B1 (ja) * 2019-07-26 2020-05-27 Ｊｘ金属株式会社 リン化インジウム基板、及びリン化インジウム基板の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56105638A (en) * 1980-01-26 1981-08-22 Sumitomo Electric Ind Ltd Manufacture of circular gallium arsenide wafer
US4366198A (en) * 1981-03-24 1982-12-28 Rca Corporation Sheet material separation construction
JPS6091692A (ja) * 1983-10-25 1985-05-23 Sharp Corp 半導体レ−ザ装置
JPS6296400A (ja) * 1985-10-23 1987-05-02 Mitsubishi Metal Corp ウエハの製造方法
JPS62154614A (ja) * 1985-12-27 1987-07-09 Toshiba Corp 接合型半導体基板の製造方法
JPS62225019A (ja) * 1986-03-27 1987-10-03 Toshiba Corp 弾性表面波素子の加工方法
DE3613132A1 (de) * 1986-04-18 1987-10-22 Mueller Georg Nuernberg Verfahren zum zerteilen von harten, nichtmetallischen werkstoffen
JPS62279652A (ja) * 1986-05-28 1987-12-04 Hitachi Ltd 単結晶基板
JPS63124486A (ja) * 1986-11-13 1988-05-27 Mitsubishi Electric Corp 半導体レ−ザの製造方法
US5117590A (en) * 1988-08-12 1992-06-02 Shin-Etsu Handotai Co., Ltd. Method of automatically chamfering a wafer and apparatus therefor
US5076021A (en) * 1989-04-28 1991-12-31 Silicon Technology Corporation Flat grind stage assembly for an automatic edge grinder
US5111622A (en) * 1989-05-18 1992-05-12 Silicon Technology Corporation Slicing and grinding system for a wafer slicing machine
US5185956A (en) * 1990-05-18 1993-02-16 Silicon Technology Corporation Wafer slicing and grinding system
US5189843A (en) * 1990-08-30 1993-03-02 Silicon Technology Corporation Wafer slicing and grinding machine and a method of slicing and grinding wafers

Also Published As

Publication number Publication date
US5279077A (en) 1994-01-18
EP0559986A3 (en) 1993-12-15
EP0559986A2 (de) 1993-09-15
EP0559986B1 (de) 1996-03-27
US5439723A (en) 1995-08-08
JPH05259016A (ja) 1993-10-08

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