DE69132622T2 - Verfahren zur Herstellung einer Phasenschieber-Fotomaske - Google Patents
Verfahren zur Herstellung einer Phasenschieber-FotomaskeInfo
- Publication number
- DE69132622T2 DE69132622T2 DE69132622T DE69132622T DE69132622T2 DE 69132622 T2 DE69132622 T2 DE 69132622T2 DE 69132622 T DE69132622 T DE 69132622T DE 69132622 T DE69132622 T DE 69132622T DE 69132622 T2 DE69132622 T2 DE 69132622T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- phase shift
- shift photomask
- photomask
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2253717A JPH04131853A (ja) | 1990-09-21 | 1990-09-21 | 位相シフトフォトマスクの修正方法 |
JP2253718A JPH04131852A (ja) | 1990-09-21 | 1990-09-21 | 位相シフト層を有するフォトマスクの製造方法 |
JP2407929A JPH04225353A (ja) | 1990-12-27 | 1990-12-27 | 位相シフト層を有するフォトマスクの製造方法 |
JP3033891A JPH04356050A (ja) | 1991-02-28 | 1991-02-28 | 位相シフト層を有するフォトマスクの製造方法 |
JP4785091A JP3046631B2 (ja) | 1991-03-13 | 1991-03-13 | 位相シフトフォトマスクの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69132622D1 DE69132622D1 (de) | 2001-07-05 |
DE69132622T2 true DE69132622T2 (de) | 2002-02-07 |
Family
ID=27521565
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69132622T Expired - Fee Related DE69132622T2 (de) | 1990-09-21 | 1991-09-23 | Verfahren zur Herstellung einer Phasenschieber-Fotomaske |
DE69131878T Expired - Fee Related DE69131878T2 (de) | 1990-09-21 | 1991-09-23 | Verfahren zur Herstellung einer Phasenverschiebungs-Photomaske |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69131878T Expired - Fee Related DE69131878T2 (de) | 1990-09-21 | 1991-09-23 | Verfahren zur Herstellung einer Phasenverschiebungs-Photomaske |
Country Status (4)
Country | Link |
---|---|
US (2) | US5614336A (de) |
EP (2) | EP0773477B1 (de) |
KR (1) | KR100280036B1 (de) |
DE (2) | DE69132622T2 (de) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2922715B2 (ja) * | 1992-06-02 | 1999-07-26 | 三菱電機株式会社 | 位相シフトパターンの欠陥修正方法 |
KR100298609B1 (ko) * | 1992-07-30 | 2001-11-30 | 기타지마 요시토시 | 위상쉬프트층을갖는포토마스크의제조방법 |
US5403682A (en) * | 1992-10-30 | 1995-04-04 | International Business Machines Corporation | Alternating rim phase-shifting mask |
JP2500050B2 (ja) * | 1992-11-13 | 1996-05-29 | インターナショナル・ビジネス・マシーンズ・コーポレイション | リム型の位相シフト・マスクの形成方法 |
US5470681A (en) * | 1993-12-23 | 1995-11-28 | International Business Machines Corporation | Phase shift mask using liquid phase oxide deposition |
KR0143707B1 (ko) * | 1994-06-23 | 1998-08-17 | 김주용 | 마스크 가장자리에서 투과되는 광의 강도를 보상하기 위한 위상반전 마스크 |
KR100399444B1 (ko) * | 1995-06-30 | 2004-04-29 | 주식회사 하이닉스반도체 | 에지강조형위상반전마스크및그제조방법 |
US6027815A (en) * | 1996-11-06 | 2000-02-22 | Taiwan Semiconductor Manufacturing Company | Non-absorbing anti-reflective coated (ARC) reticle using thin dielectric films and method of forming reticle |
US5780161A (en) * | 1996-11-06 | 1998-07-14 | Taiwan Semiconductor Manufacturing Company Ltd. | Non-absorbing anti-reflective coated (ARC) reticle using thin dielectric films and method of forming the reticle |
US6524874B1 (en) * | 1998-08-05 | 2003-02-25 | Micron Technology, Inc. | Methods of forming field emission tips using deposited particles as an etch mask |
US6329118B1 (en) | 1999-06-21 | 2001-12-11 | Intel Corporation | Method for patterning dual damascene interconnects using a sacrificial light absorbing material |
JP3456461B2 (ja) * | 2000-02-21 | 2003-10-14 | Tdk株式会社 | パターニング方法、薄膜デバイスの製造方法及び薄膜磁気ヘッドの製造方法 |
US6479411B1 (en) * | 2000-03-21 | 2002-11-12 | Angela T. Hui | Method for forming high quality multiple thickness oxide using high temperature descum |
US6524755B2 (en) | 2000-09-07 | 2003-02-25 | Gray Scale Technologies, Inc. | Phase-shift masks and methods of fabrication |
US6713408B1 (en) * | 2000-12-14 | 2004-03-30 | Louisiana Tech University Foundation, Inc. | Method of producing silica micro-structures from x-ray lithography of SOG materials |
DE10131012C2 (de) | 2001-06-27 | 2003-06-26 | Infineon Technologies Ag | Verfahren zur Herstellung einer Phasenmaske |
US20040016450A1 (en) * | 2002-01-25 | 2004-01-29 | Bertram Ronald Thomas | Method for reducing the formation of contaminants during supercritical carbon dioxide processes |
US7387868B2 (en) * | 2002-03-04 | 2008-06-17 | Tokyo Electron Limited | Treatment of a dielectric layer using supercritical CO2 |
US20050227187A1 (en) * | 2002-03-04 | 2005-10-13 | Supercritical Systems Inc. | Ionic fluid in supercritical fluid for semiconductor processing |
JP4207554B2 (ja) * | 2002-12-12 | 2009-01-14 | 住友電気工業株式会社 | 光射出面上に回折光学膜を有する発光素子とその製造方法 |
KR100673099B1 (ko) * | 2002-12-30 | 2007-01-22 | 주식회사 하이닉스반도체 | 반도체소자의 미세패턴 형성 방법 |
JP4409362B2 (ja) * | 2004-05-28 | 2010-02-03 | 富士通マイクロエレクトロニクス株式会社 | レチクルの製造方法 |
US20060102282A1 (en) * | 2004-11-15 | 2006-05-18 | Supercritical Systems, Inc. | Method and apparatus for selectively filtering residue from a processing chamber |
KR100745065B1 (ko) * | 2004-12-27 | 2007-08-01 | 주식회사 하이닉스반도체 | 위상반전 마스크의 성장성 이물질 제거방법 |
US20060186088A1 (en) * | 2005-02-23 | 2006-08-24 | Gunilla Jacobson | Etching and cleaning BPSG material using supercritical processing |
US20060226117A1 (en) * | 2005-03-29 | 2006-10-12 | Bertram Ronald T | Phase change based heating element system and method |
US7442636B2 (en) * | 2005-03-30 | 2008-10-28 | Tokyo Electron Limited | Method of inhibiting copper corrosion during supercritical CO2 cleaning |
US20060219268A1 (en) * | 2005-03-30 | 2006-10-05 | Gunilla Jacobson | Neutralization of systemic poisoning in wafer processing |
US20060225769A1 (en) * | 2005-03-30 | 2006-10-12 | Gentaro Goshi | Isothermal control of a process chamber |
US20060223899A1 (en) * | 2005-03-30 | 2006-10-05 | Hillman Joseph T | Removal of porogens and porogen residues using supercritical CO2 |
US7399708B2 (en) * | 2005-03-30 | 2008-07-15 | Tokyo Electron Limited | Method of treating a composite spin-on glass/anti-reflective material prior to cleaning |
US20070000519A1 (en) * | 2005-06-30 | 2007-01-04 | Gunilla Jacobson | Removal of residues for low-k dielectric materials in wafer processing |
JP2007149768A (ja) | 2005-11-24 | 2007-06-14 | Nec Electronics Corp | 半導体装置の製造方法 |
US8003537B2 (en) * | 2006-07-18 | 2011-08-23 | Imec | Method for the production of planar structures |
KR100802226B1 (ko) | 2006-12-21 | 2008-02-11 | 주식회사 하이닉스반도체 | 듀얼 다마신 패턴 형성 방법 |
KR100865558B1 (ko) * | 2007-07-10 | 2008-10-28 | 주식회사 하이닉스반도체 | 포토마스크의 결함 수정방법 |
KR101848578B1 (ko) * | 2014-01-28 | 2018-04-12 | 도쿄엘렉트론가부시키가이샤 | 원자층을 증착하지 않는 자가-정렬 더블 패터닝 방법 |
CN106661335B (zh) | 2014-05-14 | 2020-11-27 | 三菱化学株式会社 | 导电性组合物、抗静电膜、层叠体及其制造方法以及光掩膜的制造方法 |
JP2016161873A (ja) | 2015-03-04 | 2016-09-05 | 株式会社東芝 | パターン形成方法および制御装置 |
JP7076846B2 (ja) * | 2018-05-30 | 2022-05-30 | エルジー・ケム・リミテッド | インプリント用フォトマスク及びこれの製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5487478A (en) * | 1977-12-23 | 1979-07-11 | Nec Corp | Photo mask blank substrate |
US4411972A (en) * | 1981-12-30 | 1983-10-25 | International Business Machines Corporation | Integrated circuit photomask |
EP0090924B1 (de) | 1982-04-05 | 1987-11-11 | International Business Machines Corporation | Verfahren zur Erhöhung der Bildauflösung einer Photomaske und Photomaske zur Dürchführung dieses Verfahrens |
JPS6195356A (ja) * | 1984-10-16 | 1986-05-14 | Mitsubishi Electric Corp | フオトマスクブランク |
JPS61161739A (ja) * | 1985-01-10 | 1986-07-22 | Mitsubishi Electric Corp | 配線パタ−ンの形成方法 |
JPS6259296A (ja) | 1985-09-10 | 1987-03-14 | Green Cross Corp:The | ペプタイド誘導体 |
JPS6450425A (en) * | 1987-08-20 | 1989-02-27 | Toshiba Corp | Formation of fine pattern |
US4996075A (en) * | 1987-12-21 | 1991-02-26 | Matsushita Electric Industrial Co., Ltd. | Method for producing ultrathin metal film and ultrathin-thin metal pattern |
JPH02211450A (ja) * | 1989-02-10 | 1990-08-22 | Fujitsu Ltd | 位相シフトマスクおよびその製造方法 |
US5234780A (en) * | 1989-02-13 | 1993-08-10 | Kabushiki Kaisha Toshiba | Exposure mask, method of manufacturing the same, and exposure method using the same |
EP0653679B1 (de) * | 1989-04-28 | 2002-08-21 | Fujitsu Limited | Maske, Verfahren zur Herstellung der Maske und Verfahren zur Musterherstellung mit einer Maske |
JPH0378747A (ja) * | 1989-08-23 | 1991-04-03 | Hitachi Ltd | マスク及びマスク製造方法 |
JP2864570B2 (ja) * | 1989-10-27 | 1999-03-03 | ソニー株式会社 | 露光マスク及び露光方法 |
EP0730200A3 (de) * | 1990-01-12 | 1997-01-22 | Sony Corp | Phasenverschiebungsmaske und Verfahren zur Herstellung |
JPH03228053A (ja) * | 1990-02-01 | 1991-10-09 | Fujitsu Ltd | 光露光レチクル |
JP2634289B2 (ja) * | 1990-04-18 | 1997-07-23 | 三菱電機株式会社 | 位相シフトマスクの修正方法 |
DE69131497T2 (de) * | 1990-06-21 | 2000-03-30 | Matsushita Electronics Corp | Photomaske, die in der Photolithographie benutzt wird und ein Herstellungsverfahren derselben |
US5100503A (en) * | 1990-09-14 | 1992-03-31 | Ncr Corporation | Silica-based anti-reflective planarizing layer |
-
1991
- 1991-09-23 DE DE69132622T patent/DE69132622T2/de not_active Expired - Fee Related
- 1991-09-23 EP EP96121014A patent/EP0773477B1/de not_active Expired - Lifetime
- 1991-09-23 DE DE69131878T patent/DE69131878T2/de not_active Expired - Fee Related
- 1991-09-23 EP EP91308640A patent/EP0477035B1/de not_active Expired - Lifetime
-
1994
- 1994-11-10 US US08/337,136 patent/US5614336A/en not_active Expired - Fee Related
-
1996
- 1996-05-09 US US08/644,856 patent/US5688617A/en not_active Expired - Fee Related
-
1999
- 1999-09-27 KR KR1019990041330A patent/KR100280036B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5688617A (en) | 1997-11-18 |
EP0477035A3 (en) | 1992-10-21 |
EP0477035B1 (de) | 1999-12-29 |
DE69132622D1 (de) | 2001-07-05 |
EP0773477A1 (de) | 1997-05-14 |
DE69131878D1 (de) | 2000-02-03 |
DE69131878T2 (de) | 2000-07-20 |
EP0477035A2 (de) | 1992-03-25 |
US5614336A (en) | 1997-03-25 |
EP0773477B1 (de) | 2001-05-30 |
KR100280036B1 (ko) | 2001-01-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: LINDNER BLAUMEIER PATENT- UND RECHTSANWAELTE, 9040 |
|
8339 | Ceased/non-payment of the annual fee |