DE69032844D1 - Halbleiterspeicher mit Einrichtung zum Ersetzen defekter Speicherzellen - Google Patents

Halbleiterspeicher mit Einrichtung zum Ersetzen defekter Speicherzellen

Info

Publication number
DE69032844D1
DE69032844D1 DE69032844T DE69032844T DE69032844D1 DE 69032844 D1 DE69032844 D1 DE 69032844D1 DE 69032844 T DE69032844 T DE 69032844T DE 69032844 T DE69032844 T DE 69032844T DE 69032844 D1 DE69032844 D1 DE 69032844D1
Authority
DE
Germany
Prior art keywords
replacing defective
memory cells
semiconductor memory
defective memory
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69032844T
Other languages
English (en)
Other versions
DE69032844T2 (de
Inventor
Yasushi Kasa
Yoshihiro Takemae
Masanori Nagasawa
Yuji Arayama
Akira Terui
Sunao C O Fujitsu Ltd Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu VLSI Ltd
Fujitsu Ltd
Original Assignee
Fujitsu VLSI Ltd
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1021337A external-priority patent/JPH02201800A/ja
Priority claimed from JP1030436A external-priority patent/JPH02210697A/ja
Priority claimed from JP3043589A external-priority patent/JP2594638B2/ja
Priority claimed from JP1031562A external-priority patent/JPH02210699A/ja
Priority claimed from JP1031561A external-priority patent/JP2540201B2/ja
Priority claimed from JP1031484A external-priority patent/JPH02210698A/ja
Application filed by Fujitsu VLSI Ltd, Fujitsu Ltd filed Critical Fujitsu VLSI Ltd
Application granted granted Critical
Publication of DE69032844D1 publication Critical patent/DE69032844D1/de
Publication of DE69032844T2 publication Critical patent/DE69032844T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/816—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
    • G11C29/822—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout for read only memories
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/006—Identification

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
DE1990632844 1989-01-31 1990-01-30 Halbleiterspeicher mit Einrichtung zum Ersetzen defekter Speicherzellen Expired - Fee Related DE69032844T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP1021337A JPH02201800A (ja) 1989-01-31 1989-01-31 半導体記憶装置
JP1030436A JPH02210697A (ja) 1989-02-09 1989-02-09 半導体記憶装置
JP3043589A JP2594638B2 (ja) 1989-02-09 1989-02-09 半導体記憶装置
JP1031562A JPH02210699A (ja) 1989-02-10 1989-02-10 半導体記憶装置
JP1031561A JP2540201B2 (ja) 1989-02-10 1989-02-10 半導体記憶装置
JP1031484A JPH02210698A (ja) 1989-02-10 1989-02-10 半導体メモリ装置

Publications (2)

Publication Number Publication Date
DE69032844D1 true DE69032844D1 (de) 1999-01-28
DE69032844T2 DE69032844T2 (de) 1999-05-12

Family

ID=27548967

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990632844 Expired - Fee Related DE69032844T2 (de) 1989-01-31 1990-01-30 Halbleiterspeicher mit Einrichtung zum Ersetzen defekter Speicherzellen

Country Status (3)

Country Link
EP (2) EP0383452B1 (de)
KR (1) KR930001657B1 (de)
DE (1) DE69032844T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2250838A (en) * 1990-12-11 1992-06-17 Honda Motor Co Ltd Patching a program stored in ROM
JPH04278299A (ja) * 1991-03-07 1992-10-02 Sharp Corp 半導体記憶装置
JP2981346B2 (ja) * 1992-08-31 1999-11-22 シャープ株式会社 読み出し専用半導体記憶装置
FR2716566B1 (fr) * 1994-02-23 1996-04-19 Sgs Thomson Microelectronics Circuit de sélection d'éléments de mémoire redondants et mémoire "Flash Eeprom" comportant ledit circuit.
IT1274925B (it) * 1994-09-21 1997-07-29 Texas Instruments Italia Spa Architettura di memoria per dischi a stato solido
JP3230795B2 (ja) * 1995-09-29 2001-11-19 シャープ株式会社 読み出し専用半導体記憶装置
US6188239B1 (en) * 1996-08-12 2001-02-13 Micron Technology, Inc. Semiconductor programmable test arrangement such as an antifuse to ID circuit having common access switches and/or common programming switches
US5896327A (en) * 1997-10-27 1999-04-20 Macronix International Co., Ltd. Memory redundancy circuit for high density memory with extra row and column for failed address storage
JP3948692B2 (ja) * 1999-03-26 2007-07-25 シャープ株式会社 半導体記憶装置
US6768150B1 (en) * 2003-04-17 2004-07-27 Infineon Technologies Aktiengesellschaft Magnetic memory
US7061815B2 (en) * 2003-08-05 2006-06-13 Stmicroelectronics Pvt. Ltd. Semiconductor memory device providing redundancy

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS563499A (en) * 1979-06-25 1981-01-14 Fujitsu Ltd Semiconductor memory device
DE3221268C1 (de) * 1982-06-04 1983-12-15 Siemens AG, 1000 Berlin und 8000 München Speicherbaustein
JPH01224999A (ja) * 1988-03-04 1989-09-07 Mitsubishi Electric Corp 半導体記憶装置
DE68928112T2 (de) * 1988-03-18 1997-11-20 Toshiba Kawasaki Kk Masken-rom mit Ersatzspeicherzellen

Also Published As

Publication number Publication date
EP0686980A1 (de) 1995-12-13
DE69032844T2 (de) 1999-05-12
EP0383452A3 (de) 1992-12-23
EP0383452A2 (de) 1990-08-22
EP0686980B1 (de) 1998-12-16
EP0383452B1 (de) 1996-12-11
KR930001657B1 (en) 1993-03-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee