KR910003810A - 불휘발성 메모리장치의 제조방법 - Google Patents

불휘발성 메모리장치의 제조방법

Info

Publication number
KR910003810A
KR910003810A KR1019900010694A KR900010694A KR910003810A KR 910003810 A KR910003810 A KR 910003810A KR 1019900010694 A KR1019900010694 A KR 1019900010694A KR 900010694 A KR900010694 A KR 900010694A KR 910003810 A KR910003810 A KR 910003810A
Authority
KR
South Korea
Prior art keywords
memory device
nonvolatile memory
manufacturing nonvolatile
manufacturing
nonvolatile
Prior art date
Application number
KR1019900010694A
Other languages
English (en)
Other versions
KR950014536B1 (ko
Inventor
마사노리 노다
Original Assignee
소니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 가부시기가이샤 filed Critical 소니 가부시기가이샤
Publication of KR910003810A publication Critical patent/KR910003810A/ko
Application granted granted Critical
Publication of KR950014536B1 publication Critical patent/KR950014536B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
KR1019900010694A 1989-07-18 1990-07-14 불휘발성 메모리장치의 제조방법 KR950014536B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1186385A JPH0350772A (ja) 1989-07-18 1989-07-18 不揮発性メモリ装置の製造方法
JP89-186385 1989-07-18

Publications (2)

Publication Number Publication Date
KR910003810A true KR910003810A (ko) 1991-02-28
KR950014536B1 KR950014536B1 (ko) 1995-12-05

Family

ID=16187466

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900010694A KR950014536B1 (ko) 1989-07-18 1990-07-14 불휘발성 메모리장치의 제조방법

Country Status (2)

Country Link
JP (1) JPH0350772A (ko)
KR (1) KR950014536B1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07123146B2 (ja) * 1990-07-05 1995-12-25 株式会社東芝 不揮発性半導体記憶装置の製造方法
FR2718289B1 (fr) * 1994-03-30 1996-08-02 Sgs Thomson Microelectronics Cellule mémoire électriquement programmable.
TW451427B (en) * 1999-02-19 2001-08-21 Mitsubishi Electric Corp Non-volatile semiconductor memory device and the driving method, operation method and manufacturing method of the same
KR100415084B1 (ko) * 2001-06-15 2004-01-13 주식회사 하이닉스반도체 플레쉬 메모리소자의 제조방법
KR100395755B1 (ko) * 2001-06-28 2003-08-21 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조방법

Also Published As

Publication number Publication date
KR950014536B1 (ko) 1995-12-05
JPH0350772A (ja) 1991-03-05

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