DE60009776D1 - Halbleiter-Festwertspeicher mit Einrichtung zum Ersetzen defekter Speicherzellen - Google Patents
Halbleiter-Festwertspeicher mit Einrichtung zum Ersetzen defekter SpeicherzellenInfo
- Publication number
- DE60009776D1 DE60009776D1 DE60009776T DE60009776T DE60009776D1 DE 60009776 D1 DE60009776 D1 DE 60009776D1 DE 60009776 T DE60009776 T DE 60009776T DE 60009776 T DE60009776 T DE 60009776T DE 60009776 D1 DE60009776 D1 DE 60009776D1
- Authority
- DE
- Germany
- Prior art keywords
- memory
- replacing defective
- semiconductor read
- memory cells
- defective memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F8/00—Arrangements for software engineering
- G06F8/60—Software deployment
- G06F8/65—Updates
- G06F8/66—Updates of program code stored in read-only memory [ROM]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
Landscapes
- Engineering & Computer Science (AREA)
- Software Systems (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Computer Security & Cryptography (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Stored Programmes (AREA)
- Memory System (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8277999 | 1999-03-26 | ||
JP8277999A JP3948692B2 (ja) | 1999-03-26 | 1999-03-26 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60009776D1 true DE60009776D1 (de) | 2004-05-19 |
DE60009776T2 DE60009776T2 (de) | 2005-03-24 |
Family
ID=13783916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60009776T Expired - Lifetime DE60009776T2 (de) | 1999-03-26 | 2000-02-14 | Halbleiter-Festwertspeicher mit Einrichtung zum Ersetzen defekter Speicherzellen |
Country Status (6)
Country | Link |
---|---|
US (1) | US6594777B1 (de) |
EP (1) | EP1039385B1 (de) |
JP (1) | JP3948692B2 (de) |
KR (1) | KR100334201B1 (de) |
DE (1) | DE60009776T2 (de) |
TW (1) | TW459241B (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7089427B1 (en) * | 2000-11-28 | 2006-08-08 | Nintendo Co., Ltd. | Security system method and apparatus for preventing application program unauthorized use |
JP2003208359A (ja) * | 2002-01-16 | 2003-07-25 | Mitsubishi Electric Corp | マイクロコンピュータ |
US6957295B1 (en) * | 2002-01-18 | 2005-10-18 | Lexar Media, Inc. | File management of one-time-programmable nonvolatile memory devices |
JP4982883B2 (ja) * | 2006-09-14 | 2012-07-25 | 株式会社メガチップス | 記憶装置及びデータ出力回路 |
JP6107682B2 (ja) * | 2014-01-23 | 2017-04-05 | 富士通株式会社 | 半導体記憶装置及び半導体記憶装置の制御方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4542453A (en) * | 1982-02-19 | 1985-09-17 | Texas Instruments Incorporated | Program patching in microcomputer |
JPH0291749A (ja) * | 1988-09-29 | 1990-03-30 | Toshiba Corp | 不揮発型半導体メモリ装置 |
US5179536A (en) * | 1989-01-31 | 1993-01-12 | Fujitsu Limited | Semiconductor memory device having means for replacing defective memory cells |
EP0686980B1 (de) * | 1989-01-31 | 1998-12-16 | Fujitsu Limited | Halbleiterspeicher mit Einrichtung zum Ersetzen defekter Speicherzellen |
JPH06103056A (ja) | 1991-09-20 | 1994-04-15 | Nec Home Electron Ltd | アドレス制御装置 |
JP3575811B2 (ja) * | 1992-05-07 | 2004-10-13 | 株式会社日立製作所 | 記憶装置 |
JPH06318261A (ja) * | 1992-09-18 | 1994-11-15 | Sony Corp | 電子装置 |
JPH07129397A (ja) | 1993-09-09 | 1995-05-19 | Mitsubishi Electric Corp | データ処理装置及びデータ処理システム |
JP3561002B2 (ja) * | 1994-05-18 | 2004-09-02 | 富士通株式会社 | ディスク装置 |
JP3553138B2 (ja) * | 1994-07-14 | 2004-08-11 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
US5680640A (en) * | 1995-09-01 | 1997-10-21 | Emc Corporation | System for migrating data by selecting a first or second transfer means based on the status of a data element map initialized to a predetermined state |
US5758056A (en) * | 1996-02-08 | 1998-05-26 | Barr; Robert C. | Memory system having defective address identification and replacement |
US6158018A (en) * | 1997-11-25 | 2000-12-05 | Philips Semiconductor, Inc. | Integrated circuit including patching circuitry to bypass portions of an internally flawed read only memory and a method therefore |
-
1999
- 1999-03-26 JP JP8277999A patent/JP3948692B2/ja not_active Expired - Lifetime
-
2000
- 2000-02-14 DE DE60009776T patent/DE60009776T2/de not_active Expired - Lifetime
- 2000-02-14 EP EP00301106A patent/EP1039385B1/de not_active Expired - Lifetime
- 2000-02-17 US US09/505,514 patent/US6594777B1/en not_active Expired - Lifetime
- 2000-02-21 TW TW089102964A patent/TW459241B/zh not_active IP Right Cessation
- 2000-03-02 KR KR1020000010483A patent/KR100334201B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100334201B1 (ko) | 2002-05-02 |
EP1039385B1 (de) | 2004-04-14 |
DE60009776T2 (de) | 2005-03-24 |
KR20010014523A (ko) | 2001-02-26 |
TW459241B (en) | 2001-10-11 |
US6594777B1 (en) | 2003-07-15 |
EP1039385A1 (de) | 2000-09-27 |
JP2000276349A (ja) | 2000-10-06 |
JP3948692B2 (ja) | 2007-07-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69717761D1 (de) | Halbleiterspeicher zur Abbildung Fehlerhafter Speicherbausteinen | |
DE60044014D1 (de) | Nichtflüssiger Halbleiterspeicher mit programmierbaren Verriegelungsschaltungen | |
DE59915200D1 (de) | Elektrisch programmierbare, nichtflüchtige Speicherzellenanordnung | |
DE69702858T2 (de) | Halbleiterspeicherprüfgerät mit redundanzanalyse | |
DE60030208D1 (de) | Waferinspektionsvorrichtung | |
DE59900872D1 (de) | Speicherzellenanordnung und entsprechendes Herstellungsverfahren | |
DE60037786D1 (de) | Nichtflüchtiger Halbleiterspeicher mit Zwei-Bitzellen | |
DE50008319D1 (de) | Integrierter Halbleiterspeicher mit einer Speichereinheit zum Speichern von Adressen fehlerhafter Speicherzellen | |
DE60002798D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung und Überlöschungskorrekturverfahren | |
DE60006177D1 (de) | Block-löschbare Halbleiterspeicherschaltung mit Ersetzung defekter Speicherblöcke | |
DE19980453T1 (de) | Halbleiterbauelement-Testgerät | |
DE69909280D1 (de) | Halbleiterspeicher | |
DE69934853D1 (de) | Halbleiterspeicheranordnung | |
DE59803426D1 (de) | Speicherzellenanordnung und entsprechendes Herstellungsverfahren | |
DE60016104D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung | |
DE60107362D1 (de) | Reparaturverfahren von defekten Tunnelübergangsvorrichtungen | |
DE50011761D1 (de) | Fuse für halbleiteranordnung | |
DE69032844D1 (de) | Halbleiterspeicher mit Einrichtung zum Ersetzen defekter Speicherzellen | |
DE69902712T2 (de) | Halbleiterspeicheranordnung | |
DE60009776D1 (de) | Halbleiter-Festwertspeicher mit Einrichtung zum Ersetzen defekter Speicherzellen | |
DE69618928D1 (de) | Halbleiterspeichergerät mit Zeilenredundanz | |
DE69905418D1 (de) | Halbleiterspeicheranordnung mit Redundanz | |
DE60230129D1 (de) | Zeilenauswahlschaltung für Speicherzellenarray | |
DE69934621D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung | |
DE60015006D1 (de) | Verbindungsschema für Halbleiter-Speicherbauteil |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
R082 | Change of representative |
Ref document number: 1039385 Country of ref document: EP Representative=s name: PATENTANWAELTE RUFF, WILHELM, BEIER, DAUSTER & PAR |