DE69032255D1 - Monolithische Halbleiteranordnung mit CCD-, bipolaren und MOS-Strukturen - Google Patents

Monolithische Halbleiteranordnung mit CCD-, bipolaren und MOS-Strukturen

Info

Publication number
DE69032255D1
DE69032255D1 DE69032255T DE69032255T DE69032255D1 DE 69032255 D1 DE69032255 D1 DE 69032255D1 DE 69032255 T DE69032255 T DE 69032255T DE 69032255 T DE69032255 T DE 69032255T DE 69032255 D1 DE69032255 D1 DE 69032255D1
Authority
DE
Germany
Prior art keywords
bipolar
ccd
semiconductor device
monolithic semiconductor
mos structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69032255T
Other languages
English (en)
Other versions
DE69032255T2 (de
Inventor
Minoru Taguchi
Kazuo Kihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69032255D1 publication Critical patent/DE69032255D1/de
Publication of DE69032255T2 publication Critical patent/DE69032255T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
DE69032255T 1989-05-22 1990-05-22 Monolithische Halbleiteranordnung mit CCD-, bipolaren und MOS-Strukturen Expired - Fee Related DE69032255T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1128314A JPH0770703B2 (ja) 1989-05-22 1989-05-22 電荷転送デバイスを含む半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69032255D1 true DE69032255D1 (de) 1998-05-28
DE69032255T2 DE69032255T2 (de) 1998-09-24

Family

ID=14981711

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69032255T Expired - Fee Related DE69032255T2 (de) 1989-05-22 1990-05-22 Monolithische Halbleiteranordnung mit CCD-, bipolaren und MOS-Strukturen

Country Status (5)

Country Link
US (1) US4994888A (de)
EP (1) EP0399454B1 (de)
JP (1) JPH0770703B2 (de)
KR (1) KR930002296B1 (de)
DE (1) DE69032255T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5286986A (en) * 1989-04-13 1994-02-15 Kabushiki Kaisha Toshiba Semiconductor device having CCD and its peripheral bipolar transistors
US5198880A (en) * 1989-06-22 1993-03-30 Kabushiki Kaisha Toshiba Semiconductor integrated circuit and method of making the same
US5288651A (en) * 1989-11-09 1994-02-22 Kabushiki Kaisha Toshiba Method of making semiconductor integrated circuit device including bipolar transistors, MOS FETs and CCD
JPH07105458B2 (ja) * 1989-11-21 1995-11-13 株式会社東芝 複合型集積回路素子
US5410349A (en) * 1990-07-06 1995-04-25 Fuji Photo Film Co., Ltd. Solid-state image pick-up device of the charge-coupled device type synchronizing drive signals for a full-frame read-out
JP2642523B2 (ja) * 1991-03-19 1997-08-20 株式会社東芝 電荷結合素子を持つ半導体集積回路装置の製造方法
KR940009357B1 (ko) * 1991-04-09 1994-10-07 삼성전자주식회사 반도체 장치 및 그 제조방법
JP3768656B2 (ja) * 1997-09-18 2006-04-19 三菱電機株式会社 半導体装置
US20030134479A1 (en) * 2002-01-16 2003-07-17 Salling Craig T. Eliminating substrate noise by an electrically isolated high-voltage I/O transistor
US7161203B2 (en) 2004-06-04 2007-01-09 Micron Technology, Inc. Gated field effect device comprising gate dielectric having different K regions

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5443688A (en) * 1977-09-14 1979-04-06 Hitachi Ltd Production of semiconductor integrated circuit unit
US4152715A (en) * 1977-11-28 1979-05-01 The United States Of America As Represented By The Secretary Of The Army Silicon base CCD-bipolar transistor compatible methods and products
US4253168A (en) * 1978-10-23 1981-02-24 Westinghouse Electric Corp. CCD Signal processor
CA1151295A (en) * 1979-07-31 1983-08-02 Alan Aitken Dual resistivity mos devices and method of fabrication
JPS59177960A (ja) * 1983-03-28 1984-10-08 Hitachi Ltd 半導体装置およびその製造方法
JPS60141157U (ja) * 1984-02-25 1985-09-18 ソニー株式会社 電荷結合素子
JPS6153762A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd 半導体集積回路装置
US4642877A (en) * 1985-07-01 1987-02-17 Texas Instruments Incorporated Method for making charge coupled device (CCD)-complementary metal oxide semiconductor (CMOS) devices
US4912054A (en) * 1987-05-28 1990-03-27 Texas Instruments Incorporated Integrated bipolar-CMOS circuit isolation process for providing different backgate and substrate bias
JPS6436073A (en) * 1987-07-31 1989-02-07 Toshiba Corp Manufacture of semiconductor device
JPS6442165A (en) * 1987-08-07 1989-02-14 Fujitsu Ltd Coms semiconductor ic device
JPH0770615B2 (ja) * 1989-04-13 1995-07-31 株式会社東芝 電荷転送デバイスを含む半導体装置の製造方法
JPH03152939A (ja) * 1989-11-09 1991-06-28 Toshiba Corp 半導体集積回路装置

Also Published As

Publication number Publication date
KR930002296B1 (ko) 1993-03-29
DE69032255T2 (de) 1998-09-24
KR900019246A (ko) 1990-12-24
JPH03114235A (ja) 1991-05-15
EP0399454B1 (de) 1998-04-22
JPH0770703B2 (ja) 1995-07-31
EP0399454A3 (de) 1991-09-11
US4994888A (en) 1991-02-19
EP0399454A2 (de) 1990-11-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee