DE69023944D1 - Bipolartransistor und photoelektrisches Umwandlungsgerät, das den Bipolartransistor benutzt. - Google Patents

Bipolartransistor und photoelektrisches Umwandlungsgerät, das den Bipolartransistor benutzt.

Info

Publication number
DE69023944D1
DE69023944D1 DE69023944T DE69023944T DE69023944D1 DE 69023944 D1 DE69023944 D1 DE 69023944D1 DE 69023944 T DE69023944 T DE 69023944T DE 69023944 T DE69023944 T DE 69023944T DE 69023944 D1 DE69023944 D1 DE 69023944D1
Authority
DE
Germany
Prior art keywords
bipolar transistor
photoelectric conversion
conversion device
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69023944T
Other languages
English (en)
Other versions
DE69023944T2 (de
Inventor
Masakazu Morishita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69023944D1 publication Critical patent/DE69023944D1/de
Publication of DE69023944T2 publication Critical patent/DE69023944T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14681—Bipolar transistor imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
DE69023944T 1989-03-29 1990-03-28 Bipolartransistor und photoelektrisches Umwandlungsgerät, das den Bipolartransistor benutzt. Expired - Fee Related DE69023944T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7744089 1989-03-29

Publications (2)

Publication Number Publication Date
DE69023944D1 true DE69023944D1 (de) 1996-01-18
DE69023944T2 DE69023944T2 (de) 1996-05-23

Family

ID=13634087

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69023944T Expired - Fee Related DE69023944T2 (de) 1989-03-29 1990-03-28 Bipolartransistor und photoelektrisches Umwandlungsgerät, das den Bipolartransistor benutzt.

Country Status (3)

Country Link
US (1) US5140400A (de)
EP (1) EP0390521B1 (de)
DE (1) DE69023944T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0373832A3 (de) * 1988-12-10 1992-03-18 Canon Kabushiki Kaisha Halbleitervorrichtung und photoelektrischer Wandler, welcher diese Vorrichtung verwendet
JP2860138B2 (ja) * 1989-03-29 1999-02-24 キヤノン株式会社 半導体装置およびこれを用いた光電変換装置
JP2855908B2 (ja) * 1991-09-05 1999-02-10 日本電気株式会社 半導体装置及びその製造方法
AU2805092A (en) * 1991-10-23 1993-05-21 Microunity Systems Engineering, Inc. Bipolar junction transistor exhibiting improved beta and punch-through characteristics
EP0550962A3 (en) * 1992-01-08 1993-09-29 American Telephone And Telegraph Company Heterojunction bipolar transistor
US5321301A (en) * 1992-04-08 1994-06-14 Nec Corporation Semiconductor device
JP2971246B2 (ja) * 1992-04-15 1999-11-02 株式会社東芝 ヘテロバイポーラトランジスタの製造方法
JPH06151859A (ja) * 1992-09-15 1994-05-31 Canon Inc 半導体装置
EP0616370B1 (de) * 1993-03-16 2004-06-09 Canon Kabushiki Kaisha Halbleiteranordnung mit einem lateralen Bipolartransistor, welcher SiGe enthält, und Verfahren zu deren Herstellung
JP3156436B2 (ja) * 1993-04-05 2001-04-16 日本電気株式会社 ヘテロ接合バイポーラトランジスタ
JP2606141B2 (ja) * 1994-06-16 1997-04-30 日本電気株式会社 半導体装置およびその製造方法
US5620907A (en) * 1995-04-10 1997-04-15 Lucent Technologies Inc. Method for making a heterojunction bipolar transistor
US6211028B1 (en) * 1999-02-05 2001-04-03 Taiwan Semiconductor Manufacturing Company Twin current bipolar device with hi-lo base profile
US6426265B1 (en) * 2001-01-30 2002-07-30 International Business Machines Corporation Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
US6441462B1 (en) * 2001-07-10 2002-08-27 International Business Machines Corporation Self-aligned SiGe NPN with improved ESD robustness using wide emitter polysilicon extension
US6847045B2 (en) * 2001-10-12 2005-01-25 Hewlett-Packard Development Company, L.P. High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission
DE10164176B4 (de) * 2001-12-27 2007-12-27 Austriamicrosystems Ag Bipolartransistor
US10553633B2 (en) * 2014-05-30 2020-02-04 Klaus Y.J. Hsu Phototransistor with body-strapped base

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL266513A (de) * 1960-07-01
US4160258A (en) * 1977-11-18 1979-07-03 Bell Telephone Laboratories, Incorporated Optically coupled linear bilateral transistor
FR2490014A1 (fr) * 1980-09-11 1982-03-12 Scavennec Andre Phototransistor a heterojonction emetteur-base a couche d'emetteur localement de type inverse
DE3564518D1 (en) * 1984-09-29 1988-09-22 Toshiba Kk Heterojunction bipolar transistor and method of manufacturing the same
JPS6258678A (ja) * 1985-09-06 1987-03-14 Matsushita Electronics Corp トランジスタ
US4785457A (en) * 1987-05-11 1988-11-15 Rockwell International Corporation Heterostructure semiconductor laser
US4829343A (en) * 1987-07-17 1989-05-09 American Telephone & Telegraph Company, At&T Bell Laboratories Hot electron transistor
US4899200A (en) * 1988-06-03 1990-02-06 Regents Of The University Of Minnesota Novel high-speed integrated heterostructure transistors, photodetectors, and optoelectronic circuits

Also Published As

Publication number Publication date
EP0390521A3 (en) 1990-11-22
US5140400A (en) 1992-08-18
DE69023944T2 (de) 1996-05-23
EP0390521A2 (de) 1990-10-03
EP0390521B1 (de) 1995-12-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee