DE69030159D1 - Photoelektrische Umwandlervorrichtung mit verbessertem Rückstelltransistor und Informationsverarbeitungsgerät, welches diese verwendet - Google Patents

Photoelektrische Umwandlervorrichtung mit verbessertem Rückstelltransistor und Informationsverarbeitungsgerät, welches diese verwendet

Info

Publication number
DE69030159D1
DE69030159D1 DE69030159T DE69030159T DE69030159D1 DE 69030159 D1 DE69030159 D1 DE 69030159D1 DE 69030159 T DE69030159 T DE 69030159T DE 69030159 T DE69030159 T DE 69030159T DE 69030159 D1 DE69030159 D1 DE 69030159D1
Authority
DE
Germany
Prior art keywords
information processing
photoelectric conversion
same
reset transistor
processing device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69030159T
Other languages
English (en)
Other versions
DE69030159T2 (de
DE419402T1 (de
Inventor
Shigeyuki Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69030159D1 publication Critical patent/DE69030159D1/de
Publication of DE69030159T2 publication Critical patent/DE69030159T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14681—Bipolar transistor imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor the device being a bipolar phototransistor
DE69030159T 1989-12-14 1990-12-11 Photoelektrische Umwandlervorrichtung mit verbessertem Rückstelltransistor und Informationsverarbeitungsgerät, welches diese verwendet Expired - Fee Related DE69030159T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32457589 1989-12-14

Publications (2)

Publication Number Publication Date
DE69030159D1 true DE69030159D1 (de) 1997-04-17
DE69030159T2 DE69030159T2 (de) 1997-07-03

Family

ID=18167347

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69030159T Expired - Fee Related DE69030159T2 (de) 1989-12-14 1990-12-11 Photoelektrische Umwandlervorrichtung mit verbessertem Rückstelltransistor und Informationsverarbeitungsgerät, welches diese verwendet

Country Status (3)

Country Link
US (1) US5101252A (de)
EP (1) EP0433007B1 (de)
DE (1) DE69030159T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5406332A (en) * 1992-03-06 1995-04-11 Canon Kabushiki Kaisha Photoelectric converting device
US5844265A (en) * 1996-07-11 1998-12-01 Synaptics, Incorporated Sense amplifier for high-density imaging array
US5838176A (en) * 1996-07-11 1998-11-17 Foveonics, Inc. Correlated double sampling circuit
US6878977B1 (en) * 1999-02-25 2005-04-12 Canon Kabushiki Kaisha Photoelectric conversion device, and image sensor and image input system making use of the same
US6653617B2 (en) 2000-07-03 2003-11-25 Canon Kabushiki Kaisha Photoelectric conversion device
WO2002027763A2 (en) 2000-09-25 2002-04-04 Foveon, Inc. Active pixel sensor with noise cancellation
US6768149B1 (en) * 2000-10-05 2004-07-27 Ess Technology, Inc. Tapered threshold reset FET for CMOS imagers
JP5610970B2 (ja) * 2010-10-19 2014-10-22 キヤノン株式会社 プリント回路板
EP2587540A3 (de) * 2011-10-31 2013-06-12 Ricoh Company, Ltd. Verfahren zum Zurückstellen einer photoelektrischen Umwandlungsvorrichtung und photoelektrische Umwandlungsvorrichtung
JP6238567B2 (ja) 2012-08-01 2017-11-29 キヤノン株式会社 放電回路、電源装置及び画像形成装置
US9356525B2 (en) 2012-08-31 2016-05-31 Canon Kabushiki Kaisha Power supply device and image forming apparatus
JP6399761B2 (ja) 2014-02-07 2018-10-03 キヤノン株式会社 電源装置及び画像形成装置
US10553633B2 (en) * 2014-05-30 2020-02-04 Klaus Y.J. Hsu Phototransistor with body-strapped base
US10379487B2 (en) 2015-10-15 2019-08-13 Canon Kabushiki Kaisha Apparatus for determining whether door is open or closed and image forming apparatus
JP6818534B2 (ja) 2016-12-13 2021-01-20 キヤノン株式会社 プリント配線板、プリント回路板及び電子機器
US10716211B2 (en) 2018-02-08 2020-07-14 Canon Kabushiki Kaisha Printed circuit board, printed wiring board, electronic device, and camera

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108344A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像素子
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
JPS6043857A (ja) * 1983-08-20 1985-03-08 Mitsubishi Electric Corp 固体撮像装置とその製造方法
JPS6057780A (ja) * 1983-09-07 1985-04-03 Toshiba Corp 固体撮像装置およびその製造方法
US4794443A (en) * 1984-05-28 1988-12-27 Canon Kabushiki Kaisha Semiconductor device and process for producing same
JPS61124171A (ja) * 1984-11-20 1986-06-11 Seiko Instr & Electronics Ltd 半導体装置
JPH0719882B2 (ja) * 1985-05-01 1995-03-06 キヤノン株式会社 光電変換装置
JPH0714041B2 (ja) * 1985-06-12 1995-02-15 キヤノン株式会社 光電変換装置
JPH0760888B2 (ja) * 1985-06-12 1995-06-28 キヤノン株式会社 光電変換装置
JPS62109376A (ja) * 1985-11-08 1987-05-20 Nissan Motor Co Ltd 受光用半導体装置
JPH0654957B2 (ja) * 1985-11-13 1994-07-20 キヤノン株式会社 光電変換装置
US4866293A (en) * 1986-12-09 1989-09-12 Canon Kabushiki Kaisha Photoelectric converting apparatus to prevent the outflow of excess carriers
US4866291A (en) * 1987-06-30 1989-09-12 Canon Kabushiki Kaisha Photosensor with charge storage unit and switch unit formed on a single-crystal semiconductor film

Also Published As

Publication number Publication date
EP0433007A1 (de) 1991-06-19
US5101252A (en) 1992-03-31
EP0433007B1 (de) 1997-03-12
DE69030159T2 (de) 1997-07-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee