DE69016365D1 - Vorrichtung und Verfahren zur Züchtung von Silizium-Einkristallen, die ein Temperaturmuster einer Heizung bilden und verwenden. - Google Patents

Vorrichtung und Verfahren zur Züchtung von Silizium-Einkristallen, die ein Temperaturmuster einer Heizung bilden und verwenden.

Info

Publication number
DE69016365D1
DE69016365D1 DE69016365T DE69016365T DE69016365D1 DE 69016365 D1 DE69016365 D1 DE 69016365D1 DE 69016365 T DE69016365 T DE 69016365T DE 69016365 T DE69016365 T DE 69016365T DE 69016365 D1 DE69016365 D1 DE 69016365D1
Authority
DE
Germany
Prior art keywords
heater
silicon single
single crystals
temperature pattern
growing silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69016365T
Other languages
English (en)
Other versions
DE69016365T2 (de
Inventor
Kenji Araki
Akiho Meada
Masahiko Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69016365D1 publication Critical patent/DE69016365D1/de
Publication of DE69016365T2 publication Critical patent/DE69016365T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69016365T 1989-10-20 1990-10-19 Vorrichtung und Verfahren zur Züchtung von Silizium-Einkristallen, die ein Temperaturmuster einer Heizung bilden und verwenden. Expired - Fee Related DE69016365T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1273517A JPH0774117B2 (ja) 1989-10-20 1989-10-20 ヒータの温度パターン作成方法及びこの温度パターンを用いたＳｉ単結晶育成制御装置

Publications (2)

Publication Number Publication Date
DE69016365D1 true DE69016365D1 (de) 1995-03-09
DE69016365T2 DE69016365T2 (de) 1995-06-14

Family

ID=17528963

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69016365T Expired - Fee Related DE69016365T2 (de) 1989-10-20 1990-10-19 Vorrichtung und Verfahren zur Züchtung von Silizium-Einkristallen, die ein Temperaturmuster einer Heizung bilden und verwenden.

Country Status (4)

Country Link
US (1) US5089238A (de)
EP (1) EP0429839B1 (de)
JP (1) JPH0774117B2 (de)
DE (1) DE69016365T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0476389A3 (en) * 1990-08-30 1993-06-09 The Furukawa Electric Co., Ltd. Method of growing single crystal of compound semiconductors
JPH0777996B2 (ja) * 1990-10-12 1995-08-23 信越半導体株式会社 コーン部育成制御方法及び装置
JPH0717475B2 (ja) * 1991-02-14 1995-03-01 信越半導体株式会社 単結晶ネック部育成自動制御方法
JP2613498B2 (ja) * 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
WO1992019797A1 (en) * 1991-04-26 1992-11-12 Mitsubishi Materials Corporation Process for pulling up single crystal
DE4123336A1 (de) * 1991-07-15 1993-01-21 Leybold Ag Kristallziehverfahren und vorrichtung zu seiner durchfuehrung
JP2785532B2 (ja) * 1991-08-24 1998-08-13 信越半導体株式会社 単結晶棒引上育成制御装置
US5286461A (en) * 1991-09-20 1994-02-15 Ferrofluidics Corporation Method and apparatus for melt level detection in czochralski crystal growth systems
DE4301072B4 (de) * 1993-01-16 2006-08-24 Crystal Growing Systems Gmbh Verfahren zum Ziehen von Einkristallen aus einer Schmelze
US5846318A (en) * 1997-07-17 1998-12-08 Memc Electric Materials, Inc. Method and system for controlling growth of a silicon crystal
JP3444178B2 (ja) * 1998-02-13 2003-09-08 信越半導体株式会社 単結晶製造方法
DE19806949A1 (de) * 1998-02-19 1999-08-26 Leybold Systems Gmbh Verfahren zum Steuern von Kristallzüchtungsprozessen
US6776840B1 (en) * 1999-03-22 2004-08-17 Memc Electronic Materials, Inc. Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth process
JP2002005745A (ja) * 2000-06-26 2002-01-09 Nec Corp 温度測定装置、および温度測定方法
US20030051658A1 (en) * 2001-07-27 2003-03-20 Shigemasa Nakagawa Method and apparatus for controlling the oxygen concentration of a silicon single crystal, and method and apparatus for providing guidance for controlling the oxygen concentration
EP2251462B1 (de) 2001-09-28 2013-01-02 Komatsu Denshi Kinzoku Kabushiki Kaisha Vorrichtung und Verfahren zur Herstellung eines Einkristallhalbleiters
JP5552891B2 (ja) 2010-05-12 2014-07-16 信越半導体株式会社 単結晶製造装置および単結晶の製造方法
JP5333396B2 (ja) * 2010-09-27 2013-11-06 信越半導体株式会社 単結晶の製造方法及び単結晶製造装置
JP5720426B2 (ja) * 2011-06-01 2015-05-20 株式会社Sumco 半導体単結晶の引上げ方法及びその引上げ装置
JP5817239B2 (ja) * 2011-06-20 2015-11-18 株式会社Sumco 半導体単結晶の引上げ方法及びその引上げ装置
US10472732B2 (en) * 2015-09-30 2019-11-12 Sumco Corporation Method for manufacturing single crystal
US11414778B2 (en) * 2019-07-29 2022-08-16 Globalwafers Co., Ltd. Production and use of dynamic state charts when growing a single crystal silicon ingot
CN111926383A (zh) * 2020-07-16 2020-11-13 大同新成新材料股份有限公司 一种新型节能半导体石墨热场
US11976549B2 (en) * 2020-09-21 2024-05-07 Saudi Arabian Oil Company Monitoring temperatures of a process heater

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3617392A (en) * 1968-10-29 1971-11-02 Semimetals Inc Power control for crystal growing
DE2349736A1 (de) * 1973-10-03 1975-04-24 Siemens Ag Ueberwachungseinrichtung fuer eine vorrichtung zum ziehen von kristallen aus der schmelze
US3958129A (en) * 1974-08-05 1976-05-18 Motorola, Inc. Automatic crystal diameter control for growth of semiconductor crystals
US4185076A (en) * 1977-03-17 1980-01-22 Mobil Tyco Solar Energy Corporation Apparatus for controlled growth of silicon and germanium crystal ribbons
US4242589A (en) * 1979-01-15 1980-12-30 Mobil Tyco Solar Energy Corporation Apparatus for monitoring crystal growth
US4277441A (en) * 1979-01-15 1981-07-07 Mobil Tyco Solar Energy Corporation Apparatus for monitoring crystal growth
JPS55113696A (en) * 1979-02-23 1980-09-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor single crystal growing method by pulling method
US4565598A (en) * 1982-01-04 1986-01-21 The Commonwealth Of Australia Method and apparatus for controlling diameter in Czochralski crystal growth by measuring crystal weight and crystal-melt interface temperature
FR2553793B1 (fr) * 1983-10-19 1986-02-14 Crismatec Procede de commande d'une machine de tirage de monocristaux
JPH0649631B2 (ja) * 1986-10-29 1994-06-29 信越半導体株式会社 結晶径測定装置
JPS63307186A (ja) * 1987-06-05 1988-12-14 Shin Etsu Handotai Co Ltd 晶出結晶径制御装置

Also Published As

Publication number Publication date
JPH03137092A (ja) 1991-06-11
DE69016365T2 (de) 1995-06-14
JPH0774117B2 (ja) 1995-08-09
EP0429839A1 (de) 1991-06-05
US5089238A (en) 1992-02-18
EP0429839B1 (de) 1995-01-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee