DE69021021D1 - Vorrichtung und Verfahren zur Überwachung des Betriebs einer Halbleiteranordnung. - Google Patents

Vorrichtung und Verfahren zur Überwachung des Betriebs einer Halbleiteranordnung.

Info

Publication number
DE69021021D1
DE69021021D1 DE69021021T DE69021021T DE69021021D1 DE 69021021 D1 DE69021021 D1 DE 69021021D1 DE 69021021 T DE69021021 T DE 69021021T DE 69021021 T DE69021021 T DE 69021021T DE 69021021 D1 DE69021021 D1 DE 69021021D1
Authority
DE
Germany
Prior art keywords
monitoring
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69021021T
Other languages
English (en)
Other versions
DE69021021T2 (de
Inventor
Stephen John Ames
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR International Inc
Original Assignee
AT&T Global Information Solutions Co
AT&T Global Information Solutions International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Global Information Solutions Co, AT&T Global Information Solutions International Inc filed Critical AT&T Global Information Solutions Co
Application granted granted Critical
Publication of DE69021021D1 publication Critical patent/DE69021021D1/de
Publication of DE69021021T2 publication Critical patent/DE69021021T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1906—Control of temperature characterised by the use of electric means using an analogue comparing device
    • G05D23/1913—Control of temperature characterised by the use of electric means using an analogue comparing device delivering a series of pulses
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
    • H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216—Pulse modulation or generation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69021021T 1989-12-04 1990-11-29 Vorrichtung und Verfahren zur Überwachung des Betriebs einer Halbleiteranordnung. Expired - Lifetime DE69021021T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/445,225 US5073838A (en) 1989-12-04 1989-12-04 Method and apparatus for preventing damage to a temperature-sensitive semiconductor device

Publications (2)

Publication Number Publication Date
DE69021021D1 true DE69021021D1 (de) 1995-08-24
DE69021021T2 DE69021021T2 (de) 1996-03-21

Family

ID=23768071

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69021021T Expired - Lifetime DE69021021T2 (de) 1989-12-04 1990-11-29 Vorrichtung und Verfahren zur Überwachung des Betriebs einer Halbleiteranordnung.

Country Status (4)

Country Link
US (1) US5073838A (de)
EP (1) EP0431832B1 (de)
JP (1) JPH03185888A (de)
DE (1) DE69021021T2 (de)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04169915A (ja) * 1990-11-02 1992-06-17 Hitachi Ltd 半導体集積回路
US5212370A (en) * 1990-11-20 1993-05-18 Ncr Corporation Apparatus and method for extending laser life by discontinuous operation
JPH04285465A (ja) * 1991-03-13 1992-10-09 Nec Corp 保護回路付スイッチング電源
DE4110095C2 (de) * 1991-03-27 1998-02-12 Draegerwerk Ag Verfahren zur gasspektroskopischen Messung der Konzentration eines Gasbestandteiles
US5189314A (en) * 1991-09-04 1993-02-23 International Business Machines Corporation Variable chip-clocking mechanism
US5278404A (en) * 1992-07-20 1994-01-11 At&T Bell Laboratories Optical sub-system utilizing an embedded micro-controller
US5440520A (en) * 1994-09-16 1995-08-08 Intel Corporation Integrated circuit device that selects its own supply voltage by controlling a power supply
WO1996036925A1 (en) * 1995-05-16 1996-11-21 Giga Operations Corporation Monitor cpu for a logic device
US5752100A (en) * 1996-01-26 1998-05-12 Eastman Kodak Company Driver circuit for a camera autofocus laser diode with provision for fault protection
US5844928A (en) * 1996-02-27 1998-12-01 Lucent Technologies, Inc. Laser driver with temperature sensor on an integrated circuit
US5798918A (en) * 1996-04-29 1998-08-25 International Business Machines Corporation Performance-temperature optimization by modulating the switching factor of a circuit
US5898211A (en) * 1996-04-30 1999-04-27 Cutting Edge Optronics, Inc. Laser diode package with heat sink
US5737614A (en) * 1996-06-27 1998-04-07 International Business Machines Corporation Dynamic control of power consumption in self-timed circuits
US5734672A (en) * 1996-08-06 1998-03-31 Cutting Edge Optronics, Inc. Smart laser diode array assembly and operating method using same
US5761517A (en) * 1996-08-14 1998-06-02 International Business Machines Corporation System and method for reducing power consumption in high frequency clocked circuits
DE19643475C1 (de) * 1996-10-22 1998-06-25 Laser Applikationan Gmbh Verfahren zur Geschwindigkeitsmessung nach dem Laser-Doppler-Prinzip
US5913108A (en) * 1998-04-30 1999-06-15 Cutting Edge Optronics, Inc. Laser diode packaging
US6317235B1 (en) * 1998-08-28 2001-11-13 Zilog, Inc. Method and system for preventing burn-out of infrared transmitter diodes
US6144553A (en) * 1998-09-09 2000-11-07 Sun Microsystems, Inc. Refrigeration cooled disk storage assembly
JP3574580B2 (ja) * 1999-01-14 2004-10-06 ペンタックス株式会社 半導体レーザ装置
DE19909137A1 (de) * 1999-02-19 2000-08-31 Micron Electronic Devices Gmbh Laserdiodenansteuerung, beispielsweise Laserbehandlungsgerät
US6636538B1 (en) * 1999-03-29 2003-10-21 Cutting Edge Optronics, Inc. Laser diode packaging
US6441364B1 (en) * 1999-06-25 2002-08-27 Zvi Regev Learned behavior optical power source controller
US6349023B1 (en) * 2000-02-24 2002-02-19 Robotic Vision Systems, Inc. Power control system for illumination array
US6667869B2 (en) * 2000-02-24 2003-12-23 Acuity Imaging, Llc Power control system and method for illumination array
US7079775B2 (en) 2001-02-05 2006-07-18 Finisar Corporation Integrated memory mapped controller circuit for fiber optics transceiver
JPWO2002069464A1 (ja) * 2001-02-23 2004-07-02 富士通株式会社 光送信器
US6700913B2 (en) 2001-05-29 2004-03-02 Northrop Grumman Corporation Low cost high integrity diode laser array
US6850398B2 (en) * 2001-06-07 2005-02-01 Xicor, Inc. Feed forward programmable current controller
JP2003008138A (ja) * 2001-06-13 2003-01-10 Motorola Inc レーザーダイオード制御装置
EP1345296A1 (de) * 2002-03-16 2003-09-17 Agilent Technologies, Inc. (a Delaware corporation) System zur Leistungskontrol, Wellenlänge und Extinktionsratio in ioptischen Quellen und Rechnerprogram dafür
JP4043844B2 (ja) * 2002-05-24 2008-02-06 フリースケール セミコンダクター インコーポレイテッド 発光素子駆動装置
US7170919B2 (en) 2003-06-23 2007-01-30 Northrop Grumman Corporation Diode-pumped solid-state laser gain module
US7495848B2 (en) 2003-07-24 2009-02-24 Northrop Grumman Corporation Cast laser optical bench
US7433375B2 (en) * 2003-10-09 2008-10-07 National Semiconductor Corporation Laser trim and compensation methodology for passively aligning optical transmitter
US7321606B2 (en) * 2003-10-09 2008-01-22 National Semiconductor Corporation Laser trim and compensation methodology for passively aligning optical transmitter
GB2414214B (en) * 2004-05-19 2008-01-09 Intense Photonics Ltd Printing with laser activation
JP2005340931A (ja) * 2004-05-24 2005-12-08 Freescale Semiconductor Inc バースト信号受信装置
TW200539166A (en) * 2004-05-27 2005-12-01 Lite On It Corp Laser-emitting device of optical disc drive
DE102005011121B4 (de) * 2004-10-14 2016-04-28 Möller-Wedel GmbH & Co. KG Verfahren zum optimierten Einstellen der Lichtleistung in der Objektebene bei Auflichtmikroskopen
US7305016B2 (en) 2005-03-10 2007-12-04 Northrop Grumman Corporation Laser diode package with an internal fluid cooling channel
US7515619B2 (en) * 2005-06-22 2009-04-07 Intel Corporation Laser control circuit
US7656915B2 (en) 2006-07-26 2010-02-02 Northrop Grumman Space & Missions Systems Corp. Microchannel cooler for high efficiency laser diode heat extraction
CN101743781B (zh) 2007-07-13 2012-07-18 马丁·库斯特 发光模块和具有发光模块的袖珍工具
US7701151B2 (en) * 2007-10-19 2010-04-20 American Sterilizer Company Lighting control system having temperature compensation and trim circuits
US7812551B2 (en) * 2007-10-19 2010-10-12 American Sterilizer Company Lighting control method having a light output ramping function
US7724791B2 (en) 2008-01-18 2010-05-25 Northrop Grumman Systems Corporation Method of manufacturing laser diode packages and arrays
US8159956B2 (en) 2008-07-01 2012-04-17 Finisar Corporation Diagnostics for serial communication busses
US8345720B2 (en) 2009-07-28 2013-01-01 Northrop Grumman Systems Corp. Laser diode ceramic cooler having circuitry for control and feedback of laser diode performance
CN103348185A (zh) * 2010-06-01 2013-10-09 派拉斯科Ip有限责任公司 阵列半导体辐射发射装置的分布冷却
EP2440016B1 (de) * 2010-10-08 2019-01-23 Lantiq Beteiligungs-GmbH & Co.KG Laserdiodensteuervorrichtung
US9590388B2 (en) 2011-01-11 2017-03-07 Northrop Grumman Systems Corp. Microchannel cooler for a single laser diode emitter based system
CN102393766B (zh) * 2011-08-25 2014-04-16 上海致凯捷激光科技有限公司 高精度数字式温控器
JP5974548B2 (ja) * 2012-03-05 2016-08-23 富士電機株式会社 半導体装置
DE102012213670A1 (de) 2012-08-02 2014-05-22 Bayerische Motoren Werke Aktiengesellschaft Steuervorrichtung zur Ansteuerung einer Laserdiode
US8937976B2 (en) 2012-08-15 2015-01-20 Northrop Grumman Systems Corp. Tunable system for generating an optical pulse based on a double-pass semiconductor optical amplifier
CN103810044A (zh) * 2012-11-09 2014-05-21 辉达公司 用于控制多核处理器的门控端的系统和多核处理器
WO2015068048A1 (en) * 2013-11-11 2015-05-14 King Abdullah University Of Science And Technology High repetition rate thermometry system and method
CN110768632B (zh) * 2018-07-27 2023-03-24 瑞昱半导体股份有限公司 适应性温度的音频放大器装置及其控制方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH503394A (de) * 1969-02-06 1971-02-15 Inst Angewandte Physik Verfahren zur Modulation eines Laserstrahles
US4243952A (en) * 1978-10-30 1981-01-06 Rca Corporation Temperature compensated bias circuit for semiconductor lasers
US4592057A (en) * 1981-03-23 1986-05-27 International Business Machines Corporation Versatile digital controller for light emitting semiconductor devices
US4551009A (en) * 1981-12-21 1985-11-05 Mita Industrial Co., Ltd. Electrostatic copying apparatus
FR2537782A1 (fr) * 1982-12-14 1984-06-15 Thomson Csf Dispositif a diode emettrice de lumiere amenage pour supprimer les effets de constante de temps thermique
FR2550023B1 (fr) * 1983-07-25 1987-03-27 Auffret Rene Source lumineuse infrarouge comprenant un laser a semiconducteur associe a des moyens de selection de mode et d'asservissement en puissance
US4558465A (en) * 1983-09-19 1985-12-10 Rca Corporation Switched bias scheme for high speed laser transmitter
US4639606A (en) * 1984-10-26 1987-01-27 Optel System Limited Bar code scanner laser radiation exposure limit control system
CA1210070A (en) * 1984-10-26 1986-08-19 Northern Telecom Limited Laser transmitter
JPS61189658A (ja) * 1985-02-18 1986-08-23 Fuji Photo Film Co Ltd 半導体素子温度制御装置
JPS61189657A (ja) * 1985-02-18 1986-08-23 Fuji Photo Film Co Ltd 半導体素子温度制御装置
US4656635A (en) * 1985-05-01 1987-04-07 Spectra-Physics, Inc. Laser diode pumped solid state laser
JPS61284171A (ja) * 1985-06-11 1986-12-15 Canon Inc レ−ザ−ビ−ムプリンタ
US4631728A (en) * 1985-07-22 1986-12-23 The United States Of America As Represented By The Secretary Of The Navy Thermoelectric cooler control circuit
US4677632A (en) * 1985-10-28 1987-06-30 American Telephone And Telegraph Company, At&T Bell Laboratories Coupled loop controller for a laser transmitter
US4779161A (en) * 1986-01-22 1988-10-18 Ge Company Multi-driver integrated circuit
USH332H (en) * 1986-01-31 1987-09-01 The United States Of America As Represented By The Secretary Of The Army High speed lock mechanism
US4737798A (en) * 1986-07-03 1988-04-12 Xerox Corporation Laser diode mode hopping sensing and control system
US4697270A (en) * 1986-08-27 1987-09-29 The United States Of America As Represented By The United States Department Of Energy Copper vapor laser acoustic thermometry system
US4924112A (en) * 1988-10-31 1990-05-08 Motorola Inc. Microprocessor having high current drive and feedback for temperature control

Also Published As

Publication number Publication date
EP0431832B1 (de) 1995-07-19
US5073838A (en) 1991-12-17
DE69021021T2 (de) 1996-03-21
JPH03185888A (ja) 1991-08-13
EP0431832A3 (en) 1991-11-21
EP0431832A2 (de) 1991-06-12

Similar Documents

Publication Publication Date Title
DE69021021D1 (de) Vorrichtung und Verfahren zur Überwachung des Betriebs einer Halbleiteranordnung.
DE3850349D1 (de) Vorrichtung und Verfahren zur Leistungsüberwachung von Workstation Controllern.
DE3688527D1 (de) Verfahren und vorrichtung zur behandlung einer fluessigkeit.
DE68905022D1 (de) Verfahren und vorrichtung zum betreiben einer kuehlanlage.
DE69000870D1 (de) Verfahren und vorrichtung zur abfallbeseitigung.
DE3884903D1 (de) Vorrichtung und Verfahren zum Abschneiden einer Halbleiterscheibe.
DE69021659D1 (de) Verfahren und Vorrichtung zur reihenweisen Parallelprogrammfehlersuche.
DE3852715D1 (de) Verfahren und Gerät zur Beobachtung des Betriebszustandes einer mechanischen Dichtung.
DE69003529D1 (de) Einrichtung und Verfahren zur Überwachung einer Schwingungsvorrichtung.
DE68921075D1 (de) Verfahren und vorrichtung zur beseitigung des zementes einer prothese.
DE69028190D1 (de) Verfahren und Vorrichtung zur Softwareüberwachung und -entwicklung
DE69101636D1 (de) Vorrichtung und Verfahren zur Herstellung einer Spritze.
DE59002836D1 (de) Verfahren und vorrichtung zur überwachung des wirkungsgrades eines kondensators.
DE3851514D1 (de) Verfahren und Vorrichtung zur überprüfung der Zustände einer Maschine.
DE3673153D1 (de) Verfahren und vorrichtung zum automatischen ueberwachen des schussfadeneintrags.
DE59006924D1 (de) Verfahren und vorrichtung zur überwachung der funktionsfähigkeit einer sonden-heizeinrichtung.
DE69015074D1 (de) Verfahren und Vorrichtung zur Durchführung einer Fermentation.
DE59002138D1 (de) Verfahren zur stroemungsmessung und vorrichtung hierzu.
DE69016818D1 (de) Verfahren und Vorrichtung zum Aufwickeln.
DE59200353D1 (de) Verfahren und Vorrichtung zur Überwachung einer Bahn.
DE69017107D1 (de) Verfahren und Vorrichtung zur Überwachung der Werbewirksamkeit.
DE3771416D1 (de) Verfahren und vorrichtung zum mikroloeten.
DE68918149D1 (de) Vorrichtung und Verfahren zum Herstellen einer Vorrichtung.
DE68902271D1 (de) Verfahren und vorrichtung zur erfassung des verdrahtungsmusters.
DE69320179T2 (de) Verfahren und vorrichtung zur raumüberwachung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DELAWAR

8328 Change in the person/name/address of the agent

Free format text: V. BEZOLD & SOZIEN, 80799 MUENCHEN