DE68928094D1 - Elektrostatische Halteplatte - Google Patents

Elektrostatische Halteplatte

Info

Publication number
DE68928094D1
DE68928094D1 DE68928094T DE68928094T DE68928094D1 DE 68928094 D1 DE68928094 D1 DE 68928094D1 DE 68928094 T DE68928094 T DE 68928094T DE 68928094 T DE68928094 T DE 68928094T DE 68928094 D1 DE68928094 D1 DE 68928094D1
Authority
DE
Germany
Prior art keywords
layers
base plate
insulating film
holding plate
electrostatic holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68928094T
Other languages
English (en)
Other versions
DE68928094T2 (de
Inventor
Toshiya C O Toto Limi Watanabe
Tetsuo C O Toto Li Kitabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toto Ltd
Original Assignee
Toto Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toto Ltd filed Critical Toto Ltd
Publication of DE68928094D1 publication Critical patent/DE68928094D1/de
Application granted granted Critical
Publication of DE68928094T2 publication Critical patent/DE68928094T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means
DE68928094T 1988-09-19 1989-09-18 Elektrostatische Halteplatte Expired - Fee Related DE68928094T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63234505A JP2665242B2 (ja) 1988-09-19 1988-09-19 静電チャック

Publications (2)

Publication Number Publication Date
DE68928094D1 true DE68928094D1 (de) 1997-07-10
DE68928094T2 DE68928094T2 (de) 1997-10-02

Family

ID=16972081

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68928094T Expired - Fee Related DE68928094T2 (de) 1988-09-19 1989-09-18 Elektrostatische Halteplatte

Country Status (6)

Country Link
US (1) US5151845A (de)
EP (1) EP0360529B1 (de)
JP (1) JP2665242B2 (de)
AT (1) ATE154163T1 (de)
CA (1) CA1313428C (de)
DE (1) DE68928094T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112936316A (zh) * 2021-01-28 2021-06-11 南方科技大学 一种静电吸附电极和静电吸附装置

Families Citing this family (109)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5255153A (en) * 1990-07-20 1993-10-19 Tokyo Electron Limited Electrostatic chuck and plasma apparatus equipped therewith
EP0493089B1 (de) * 1990-12-25 1998-09-16 Ngk Insulators, Ltd. Heizungsapparat für eine Halbleiterscheibe und Verfahren zum Herstellen desselben
US5166856A (en) * 1991-01-31 1992-11-24 International Business Machines Corporation Electrostatic chuck with diamond coating
EP0506537A1 (de) * 1991-03-28 1992-09-30 Shin-Etsu Chemical Co., Ltd. Elektrostatische Halteplatte
US5191506A (en) * 1991-05-02 1993-03-02 International Business Machines Corporation Ceramic electrostatic chuck
US5155652A (en) * 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
US5207437A (en) * 1991-10-29 1993-05-04 International Business Machines Corporation Ceramic electrostatic wafer chuck
DE69231299T2 (de) * 1991-11-07 2001-01-18 Varian Semiconductor Equipment Verfahren zur Herstellung einer elektrostatischen Halteplatte
US5539609A (en) * 1992-12-02 1996-07-23 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
JP2938679B2 (ja) * 1992-06-26 1999-08-23 信越化学工業株式会社 セラミックス製静電チャック
US5600530A (en) * 1992-08-04 1997-02-04 The Morgan Crucible Company Plc Electrostatic chuck
US5413360A (en) * 1992-12-01 1995-05-09 Kyocera Corporation Electrostatic chuck
US5350479A (en) * 1992-12-02 1994-09-27 Applied Materials, Inc. Electrostatic chuck for high power plasma processing
US5384681A (en) * 1993-03-01 1995-01-24 Toto Ltd. Electrostatic chuck
US5384682A (en) * 1993-03-22 1995-01-24 Toto Ltd. Electrostatic chuck
JPH06326175A (ja) * 1993-04-22 1994-11-25 Applied Materials Inc 集積回路処理装置において使用されるウエハサポートの誘電材への保護被覆とその形成方法
KR100260587B1 (ko) * 1993-06-01 2000-08-01 히가시 데쓰로 정전척 및 그의 제조방법
US5463526A (en) * 1994-01-21 1995-10-31 Lam Research Corporation Hybrid electrostatic chuck
US5801915A (en) * 1994-01-31 1998-09-01 Applied Materials, Inc. Electrostatic chuck having a unidirectionally conducting coupler layer
US6278600B1 (en) * 1994-01-31 2001-08-21 Applied Materials, Inc. Electrostatic chuck with improved temperature control and puncture resistance
US5729423A (en) * 1994-01-31 1998-03-17 Applied Materials, Inc. Puncture resistant electrostatic chuck
TW288253B (de) * 1994-02-03 1996-10-11 Aneruba Kk
EP0669644B1 (de) * 1994-02-28 1997-08-20 Applied Materials, Inc. Elektrostatische Halteplatte
FR2724269B1 (fr) * 1994-09-06 1996-10-18 Commissariat Energie Atomique Porte-substrat electrostatique
US5792562A (en) * 1995-01-12 1998-08-11 Applied Materials, Inc. Electrostatic chuck with polymeric impregnation and method of making
US5671116A (en) * 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
US5670066A (en) * 1995-03-17 1997-09-23 Lam Research Corporation Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated
US6042686A (en) * 1995-06-30 2000-03-28 Lam Research Corporation Power segmented electrode
JP2971369B2 (ja) * 1995-08-31 1999-11-02 トーカロ株式会社 静電チャック部材およびその製造方法
JP3457477B2 (ja) * 1995-09-06 2003-10-20 日本碍子株式会社 静電チャック
US5835333A (en) * 1995-10-30 1998-11-10 Lam Research Corporation Negative offset bipolar electrostatic chucks
US5841623A (en) * 1995-12-22 1998-11-24 Lam Research Corporation Chuck for substrate processing and method for depositing a film in a radio frequency biased plasma chemical depositing system
JPH09260474A (ja) * 1996-03-22 1997-10-03 Sony Corp 静電チャックおよびウエハステージ
US5812361A (en) * 1996-03-29 1998-09-22 Lam Research Corporation Dynamic feedback electrostatic wafer chuck
US5761023A (en) * 1996-04-25 1998-06-02 Applied Materials, Inc. Substrate support with pressure zones having reduced contact area and temperature feedback
US6108189A (en) 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US5751537A (en) * 1996-05-02 1998-05-12 Applied Materials, Inc. Multielectrode electrostatic chuck with fuses
US6055150A (en) * 1996-05-02 2000-04-25 Applied Materials, Inc. Multi-electrode electrostatic chuck having fuses in hollow cavities
US6175485B1 (en) 1996-07-19 2001-01-16 Applied Materials, Inc. Electrostatic chuck and method for fabricating the same
TW334609B (en) * 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
US5978202A (en) * 1997-06-27 1999-11-02 Applied Materials, Inc. Electrostatic chuck having a thermal transfer regulator pad
GB2329515B (en) * 1997-09-18 2002-03-13 Trikon Equip Ltd Platen for semiconductor workpieces
JPH11111828A (ja) * 1997-09-30 1999-04-23 Shin Etsu Chem Co Ltd 静電吸着装置
US5880924A (en) * 1997-12-01 1999-03-09 Applied Materials, Inc. Electrostatic chuck capable of rapidly dechucking a substrate
US5909355A (en) * 1997-12-02 1999-06-01 Applied Materials, Inc. Ceramic electrostatic chuck and method of fabricating same
JPH11168134A (ja) * 1997-12-03 1999-06-22 Shin Etsu Chem Co Ltd 静電吸着装置およびその製造方法
US5905626A (en) * 1998-04-12 1999-05-18 Dorsey Gage, Inc. Electrostatic chuck with ceramic pole protection
US6140236A (en) * 1998-04-21 2000-10-31 Kabushiki Kaisha Toshiba High throughput A1-Cu thin film sputtering process on small contact via for manufacturable beol wiring
US6641939B1 (en) 1998-07-01 2003-11-04 The Morgan Crucible Company Plc Transition metal oxide doped alumina and methods of making and using
US6259592B1 (en) * 1998-11-19 2001-07-10 Applied Materials, Inc. Apparatus for retaining a workpiece upon a workpiece support and method of manufacturing same
US6263829B1 (en) 1999-01-22 2001-07-24 Applied Materials, Inc. Process chamber having improved gas distributor and method of manufacture
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
US6273958B2 (en) 1999-06-09 2001-08-14 Applied Materials, Inc. Substrate support for plasma processing
US6268994B1 (en) 1999-07-09 2001-07-31 Dorsey Gage, Inc. Electrostatic chuck and method of manufacture
US6500299B1 (en) 1999-07-22 2002-12-31 Applied Materials Inc. Chamber having improved gas feed-through and method
US6488820B1 (en) * 1999-08-23 2002-12-03 Applied Materials, Inc. Method and apparatus for reducing migration of conductive material on a component
KR20020059438A (ko) 1999-12-09 2002-07-12 보스트 스티븐 엘. 편평한 막 전극을 갖는 정전 척
US6603650B1 (en) 1999-12-09 2003-08-05 Saint-Gobain Ceramics And Plastics, Inc. Electrostatic chuck susceptor and method for fabrication
US6723274B1 (en) 1999-12-09 2004-04-20 Saint-Gobain Ceramics & Plastics, Inc. High-purity low-resistivity electrostatic chucks
US6478924B1 (en) 2000-03-07 2002-11-12 Applied Materials, Inc. Plasma chamber support having dual electrodes
EP1383168A1 (de) * 2000-03-15 2004-01-21 Ibiden Co., Ltd. Verfahren zur herstellung elektrostatischer futter und verfahren zur herstellung keramischer heizelemente
US6598559B1 (en) 2000-03-24 2003-07-29 Applied Materials, Inc. Temperature controlled chamber
US6731496B2 (en) * 2000-05-10 2004-05-04 Ibiden Co., Ltd. Electrostatic chuck
TWI254403B (en) 2000-05-19 2006-05-01 Ngk Insulators Ltd Electrostatic clamper, and electrostatic attracting structures
JP4156788B2 (ja) * 2000-10-23 2008-09-24 日本碍子株式会社 半導体製造装置用サセプター
KR20020046214A (ko) * 2000-12-11 2002-06-20 어드밴스드 세라믹스 인터내셔날 코포레이션 정전척 및 그 제조방법
US20030107865A1 (en) * 2000-12-11 2003-06-12 Shinsuke Masuda Wafer handling apparatus and method of manufacturing the same
US6581275B2 (en) 2001-01-22 2003-06-24 Applied Materials Inc. Fabricating an electrostatic chuck having plasma resistant gas conduits
DE10122036B4 (de) * 2001-05-07 2009-12-24 Karl Suss Dresden Gmbh Substrathaltevorrichtung für Prober zum Testen von Schaltungsanordnungen auf scheibenförmigen Substraten
US6483690B1 (en) * 2001-06-28 2002-11-19 Lam Research Corporation Ceramic electrostatic chuck assembly and method of making
KR20030020072A (ko) * 2001-09-01 2003-03-08 주성엔지니어링(주) 유니폴라 정전척
US6682627B2 (en) 2001-09-24 2004-01-27 Applied Materials, Inc. Process chamber having a corrosion-resistant wall and method
US20030188685A1 (en) * 2002-04-08 2003-10-09 Applied Materials, Inc. Laser drilled surfaces for substrate processing chambers
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
JP2005133876A (ja) 2003-10-31 2005-05-26 Ntn Corp 電食防止型転がり軸受
DE102004041049A1 (de) * 2004-07-02 2006-01-26 VenTec Gesellschaft für Venturekapital und Unternehmensberatung mbH Mobiler, elektrostatischer Substrathalter und Verfahren zur Herstellung des Substrathalters
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
WO2006049085A1 (ja) * 2004-11-04 2006-05-11 Ulvac, Inc. 静電チャック装置
US7993489B2 (en) * 2005-03-31 2011-08-09 Tokyo Electron Limited Capacitive coupling plasma processing apparatus and method for using the same
JP4704088B2 (ja) 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
DE202005011367U1 (de) 2005-07-18 2005-09-29 Retzlaff, Udo, Dr. Transfer-ESC auf Wafer-Basis
US20070029046A1 (en) * 2005-08-04 2007-02-08 Applied Materials, Inc. Methods and systems for increasing substrate temperature in plasma reactors
US7762114B2 (en) 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US7717574B1 (en) * 2005-09-30 2010-05-18 Obscura Digital, Inc. Method for simplifying the imaging of objects with non-Lambertian surfaces
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US7248457B2 (en) * 2005-11-15 2007-07-24 Toto Ltd. Electrostatic chuck
US8647484B2 (en) 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
DE202006007122U1 (de) * 2006-05-03 2006-09-07 Retzlaff, Udo, Dr. Mobiler, transportabler, elektrostatischer Substrathalter aus Halbleitermaterial
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
WO2008082978A2 (en) * 2006-12-26 2008-07-10 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method of forming
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
JP5036339B2 (ja) * 2007-02-07 2012-09-26 日本碍子株式会社 静電チャック及びその製造方法
US20080274626A1 (en) * 2007-05-04 2008-11-06 Frederique Glowacki Method for depositing a high quality silicon dielectric film on a germanium substrate with high quality interface
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
JP2008103753A (ja) * 2007-12-10 2008-05-01 Canon Anelva Corp 半導体製造装置用静電吸着ステージ
IT1398430B1 (it) * 2009-09-03 2013-02-22 Applied Materials Inc Dispositivo per l'alloggiamento di un substrato, e relativo procedimento
JP4920066B2 (ja) * 2009-09-18 2012-04-18 Ｎｔｎ株式会社 電食防止型転がり軸受
US9494875B2 (en) 2011-10-06 2016-11-15 Asml Netherlands B.V. Chuck, a chuck control system, a lithography apparatus and a method of using a chuck
JP5583877B1 (ja) * 2012-11-06 2014-09-03 日本碍子株式会社 サセプタ
US9293926B2 (en) * 2012-11-21 2016-03-22 Lam Research Corporation Plasma processing systems having multi-layer segmented electrodes and methods therefor
JP5654083B2 (ja) * 2013-05-09 2015-01-14 東京エレクトロン株式会社 静電チャック及び基板処理装置
US10153139B2 (en) * 2015-06-17 2018-12-11 Applied Materials, Inc. Multiple electrode substrate support assembly and phase control system
KR20180130535A (ko) * 2016-04-07 2018-12-07 마테리온 코포레이션 산화 베릴륨 일체형 저항 히터
JP2018046179A (ja) 2016-09-15 2018-03-22 株式会社東芝 静電チャック及び半導体製造装置
JP7012454B2 (ja) * 2017-04-27 2022-01-28 株式会社岡本工作機械製作所 静電吸着チャックの製造方法並びに半導体装置の製造方法
US10190216B1 (en) 2017-07-25 2019-01-29 Lam Research Corporation Showerhead tilt mechanism
JP7059064B2 (ja) * 2018-03-26 2022-04-25 株式会社日立ハイテク プラズマ処理装置
TWD223375S (zh) * 2021-03-29 2023-02-01 大陸商北京北方華創微電子裝備有限公司 靜電卡盤

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1043298A (en) * 1963-08-16 1966-09-21 F L Moseley Company Electrostatic paper holding arrangements
GB2106325A (en) * 1981-09-14 1983-04-07 Philips Electronic Associated Electrostatic chuck
JPS6059104B2 (ja) * 1982-02-03 1985-12-23 株式会社東芝 静電チヤツク板
JPS6059104A (ja) * 1983-09-03 1985-04-05 新宅　光男 靴下編機によるフ−トカバ−
US4692836A (en) * 1983-10-31 1987-09-08 Toshiba Kikai Kabushiki Kaisha Electrostatic chucks
JPH0760849B2 (ja) * 1986-06-05 1995-06-28 東陶機器株式会社 静電チャック板
JPS62286248A (ja) * 1986-06-05 1987-12-12 Toto Ltd 静電チヤツク板及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112936316A (zh) * 2021-01-28 2021-06-11 南方科技大学 一种静电吸附电极和静电吸附装置

Also Published As

Publication number Publication date
JP2665242B2 (ja) 1997-10-22
CA1313428C (en) 1993-02-02
EP0360529B1 (de) 1997-06-04
DE68928094T2 (de) 1997-10-02
EP0360529A3 (de) 1991-01-02
ATE154163T1 (de) 1997-06-15
US5151845A (en) 1992-09-29
JPH02160444A (ja) 1990-06-20
EP0360529A2 (de) 1990-03-28

Similar Documents

Publication Publication Date Title
DE68928094T2 (de) Elektrostatische Halteplatte
CA1329637C (en) Electrostatic holding apparatus
KR900017140A (ko) 정전식 웨이퍼 이송 블레이드 및 그러한 블레이드에서의 정전 결합력을 최대화하는 방법
EP0252756A3 (de) Halbleiteranordnung mit einem organischen Material
KR970024315A (ko) 센서 및 센서 제조 방법(Sensor and method for manufacturing the same)
DE3688758T2 (de) Dünnfilmtransistor auf isolierendem Substrat.
JPH0351101B2 (de)
KR900003030B1 (en) Programmable device for semiconductor integrated cricuit
DE68904667D1 (de) Herstellungsverfahren fuer einen duennschichttyp-widerstand.
DE69823539D1 (de) Mehrschichtige elektroleitende antireflektierende beschichtung
US2942077A (en) Electrostatic controls
DE50014127D1 (de) Piezoaktor mit einer elektrisch leitenden Mehrschichtfolie
EP0793247A3 (de) Geräuscharme Dispersionselektrolumineszenzvorrichtung, und Schalter der diese verwendet
EP1295385B1 (de) Elektro-adhäsions-vorrichtung
JP2004503450A5 (de)
JPS57100770A (en) Switching element
ATE72375T1 (de) Grundlage zum tragen elektrischer bahnen und/oder komponenten.
KR960012283A (ko) 정전척 및 그 제조방법
US3571678A (en) Electrostatic recording paper holding device
JP2003282671A (ja) 静電保持装置及びそれを用いた搬送装置
DE69131541T2 (de) Halbleiterbauelement mit vergrösserter elektrostatischer Durchbruchspannung
EP0393979A3 (de) Verfahren zur Herstellung einer Gruppe von elektrolumineszenten Randstrahlenvorrichtungen
JPH07321186A (ja) 静電吸着装置
JPH06143075A (ja) 静電吸着装置
SU1175692A1 (ru) Схват робота

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee