DE68919257T2 - Schutzhalbleitervorrichtung. - Google Patents

Schutzhalbleitervorrichtung.

Info

Publication number
DE68919257T2
DE68919257T2 DE68919257T DE68919257T DE68919257T2 DE 68919257 T2 DE68919257 T2 DE 68919257T2 DE 68919257 T DE68919257 T DE 68919257T DE 68919257 T DE68919257 T DE 68919257T DE 68919257 T2 DE68919257 T2 DE 68919257T2
Authority
DE
Germany
Prior art keywords
semiconductor device
protective semiconductor
protective
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68919257T
Other languages
English (en)
Other versions
DE68919257D1 (de
Inventor
Takeshi C O Intellectua Koyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE68919257D1 publication Critical patent/DE68919257D1/de
Application granted granted Critical
Publication of DE68919257T2 publication Critical patent/DE68919257T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE68919257T 1988-04-14 1989-04-14 Schutzhalbleitervorrichtung. Expired - Fee Related DE68919257T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63090213A JPH01262654A (ja) 1988-04-14 1988-04-14 半導体装置

Publications (2)

Publication Number Publication Date
DE68919257D1 DE68919257D1 (de) 1994-12-15
DE68919257T2 true DE68919257T2 (de) 1995-04-13

Family

ID=13992204

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68919257T Expired - Fee Related DE68919257T2 (de) 1988-04-14 1989-04-14 Schutzhalbleitervorrichtung.

Country Status (5)

Country Link
US (1) US5148249A (de)
EP (1) EP0337482B1 (de)
JP (1) JPH01262654A (de)
KR (1) KR930001219B1 (de)
DE (1) DE68919257T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212398A (en) * 1989-11-30 1993-05-18 Kabushiki Kaisha Toshiba BiMOS structure having a protective diode
US5539604A (en) * 1994-09-30 1996-07-23 Microsemi, Corp. Transient voltage suppressor apparatus
JP2001148484A (ja) * 1999-11-22 2001-05-29 Rohm Co Ltd アノードコモンツェナーダイオード
JP5925445B2 (ja) * 2011-08-19 2016-05-25 エスアイアイ・セミコンダクタ株式会社 半導体装置
CN105609500B (zh) * 2016-01-28 2018-10-12 嘉兴爱禾电子有限公司 一种共极集成二极管

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4057844A (en) * 1976-06-24 1977-11-08 American Microsystems, Inc. MOS input protection structure
JPS5361982A (en) * 1976-11-15 1978-06-02 Mitsubishi Electric Corp Semiconductor integrated circuit device
US4072976A (en) * 1976-12-28 1978-02-07 Hughes Aircraft Company Gate protection device for MOS circuits
JPS5650581A (en) * 1979-10-01 1981-05-07 Hitachi Ltd Schottky diode
US4342045A (en) * 1980-04-28 1982-07-27 Advanced Micro Devices, Inc. Input protection device for integrated circuits
JPS57139957A (en) * 1981-02-24 1982-08-30 Mitsubishi Electric Corp Protective diode of semiconductor integrated circuit device
JPS57154868A (en) * 1981-03-20 1982-09-24 Clarion Co Ltd Semiconductor integrated circuit and manufacture thereof
JPS57164571A (en) * 1981-04-02 1982-10-09 Mitsubishi Electric Corp Semiconductro integrated circuit device
JPS57187962A (en) * 1981-05-13 1982-11-18 Matsushita Electric Ind Co Ltd Surge protector of semiconductor integrated circuit
JPS5874081A (ja) * 1981-10-29 1983-05-04 Nec Corp 半導体装置
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
JPS5928370A (ja) * 1982-08-09 1984-02-15 Toshiba Corp 半導体装置
JPS59106162A (ja) * 1982-12-10 1984-06-19 Matsushita Electronics Corp 半導体装置
JPS607763A (ja) * 1983-06-27 1985-01-16 Nec Corp 半導体装置
JPS5980973A (ja) * 1983-09-02 1984-05-10 Hitachi Ltd ゲ−ト保護回路
JPS60234377A (ja) * 1984-05-07 1985-11-21 Toshiba Corp 半導体装置及びその製造方法
JPS60246668A (ja) * 1984-05-22 1985-12-06 Mitsubishi Electric Corp 半導体集積回路
JPS613507A (ja) * 1984-06-15 1986-01-09 Mitsubishi Electric Corp サ−ジ保護回路
JPS6119163A (ja) * 1984-07-05 1986-01-28 Matsushita Electric Ind Co Ltd 半導体集積回路
JPS6142170A (ja) * 1984-08-02 1986-02-28 Nec Corp 保護素子を有する電界効果型半導体装置
JPS61228667A (ja) * 1985-04-01 1986-10-11 Mitsubishi Electric Corp 固体撮像装置
JPS61263253A (ja) * 1985-05-17 1986-11-21 Nec Corp 半導体保護装置
JPS61263254A (ja) * 1985-05-17 1986-11-21 Nec Corp 入力保護装置
JPS61295651A (ja) * 1985-06-24 1986-12-26 Mitsubishi Electric Corp 半導体入力保護装置
US4806999A (en) * 1985-09-30 1989-02-21 American Telephone And Telegraph Company, At&T Bell Laboratories Area efficient input protection
JPS6298675A (ja) * 1985-10-25 1987-05-08 Hitachi Ltd 砒化ガリウム半導体装置
IT1188398B (it) * 1986-02-18 1988-01-07 Sgs Microelettronica Spa Struttura integrata di protezione da scariche elettrostatische e dispositivo a semiconduttore incorporante la stessa
JPS63175461A (ja) * 1987-01-14 1988-07-19 Mitsubishi Electric Corp 半導体集積回路のサ−ジ保護装置
JPS63244874A (ja) * 1987-03-31 1988-10-12 Toshiba Corp 入力保護回路
US4750081A (en) * 1987-10-19 1988-06-07 Unisys Corporation Phantom ESD protection circuit employing E-field crowding

Also Published As

Publication number Publication date
DE68919257D1 (de) 1994-12-15
JPH01262654A (ja) 1989-10-19
JPH0553303B2 (de) 1993-08-09
EP0337482A2 (de) 1989-10-18
EP0337482A3 (en) 1990-10-31
KR930001219B1 (en) 1993-02-22
EP0337482B1 (de) 1994-11-09
US5148249A (en) 1992-09-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee