JPS57154868A - Semiconductor integrated circuit and manufacture thereof - Google Patents
Semiconductor integrated circuit and manufacture thereofInfo
- Publication number
- JPS57154868A JPS57154868A JP56039606A JP3960681A JPS57154868A JP S57154868 A JPS57154868 A JP S57154868A JP 56039606 A JP56039606 A JP 56039606A JP 3960681 A JP3960681 A JP 3960681A JP S57154868 A JPS57154868 A JP S57154868A
- Authority
- JP
- Japan
- Prior art keywords
- type
- aperture
- insulating film
- integrated circuit
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000007769 metal material Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To reduce the area occupied by load as well as to obtain high intergration for the subject semiconductor integrated circuit by a method wherein a Schottky barrier diode is used as the element for load MISFET. CONSTITUTION:An insulating film 7 such as SiO2 and the like is formed on the surface of the silicon substrate whereon a P type layer 2 was formed contacting an N<+> type layer 1. Subsequently, an aperture is formed on the film 7 excluding a part, and an N type region 3 is formed by diffusing N type impurities from this aparture. The surface of the aperture is then covered by the insulating film 7. N type regions 4 and 5 and a P<+> type region 6 are formed in the same manner. An aperture is formed by removing each surface part of the regions 3- 6 on the insulating film 7. Then a metal material, whereon an N type region 3 and a Schottky barrier can be formed, is attached, while an unnecessary part is removed and electrodes 8, 9 and 10 are formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56039606A JPS57154868A (en) | 1981-03-20 | 1981-03-20 | Semiconductor integrated circuit and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56039606A JPS57154868A (en) | 1981-03-20 | 1981-03-20 | Semiconductor integrated circuit and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57154868A true JPS57154868A (en) | 1982-09-24 |
Family
ID=12557768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56039606A Pending JPS57154868A (en) | 1981-03-20 | 1981-03-20 | Semiconductor integrated circuit and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57154868A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5148249A (en) * | 1988-04-14 | 1992-09-15 | Kabushiki Kaisha Toshiba | Semiconductor protection device |
-
1981
- 1981-03-20 JP JP56039606A patent/JPS57154868A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5148249A (en) * | 1988-04-14 | 1992-09-15 | Kabushiki Kaisha Toshiba | Semiconductor protection device |
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