DE68915148T2 - Fotoresist-zusammensetzung. - Google Patents

Fotoresist-zusammensetzung.

Info

Publication number
DE68915148T2
DE68915148T2 DE68915148T DE68915148T DE68915148T2 DE 68915148 T2 DE68915148 T2 DE 68915148T2 DE 68915148 T DE68915148 T DE 68915148T DE 68915148 T DE68915148 T DE 68915148T DE 68915148 T2 DE68915148 T2 DE 68915148T2
Authority
DE
Germany
Prior art keywords
photoresist composition
photoresist
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68915148T
Other languages
English (en)
Other versions
DE68915148D1 (de
Inventor
Takashi Yamamoto
Masaaki Todoko
Toru Seita
Kyoko Nagaoka
Kosaburo Matsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Corp
Original Assignee
Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Corp filed Critical Tosoh Corp
Publication of DE68915148D1 publication Critical patent/DE68915148D1/de
Application granted granted Critical
Publication of DE68915148T2 publication Critical patent/DE68915148T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C7/00—Multicolour photographic processes or agents therefor; Regeneration of such processing agents; Photosensitive materials for multicolour processes
    • G03C7/04—Additive processes using colour screens; Materials therefor; Preparing or processing such materials
    • G03C7/06—Manufacture of colour screens
    • G03C7/10—Manufacture of colour screens with regular areas of colour, e.g. bands, lines, dots
    • G03C7/12—Manufacture of colour screens with regular areas of colour, e.g. bands, lines, dots by photo-exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE68915148T 1988-02-17 1989-02-17 Fotoresist-zusammensetzung. Expired - Fee Related DE68915148T2 (de)

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
JP3280688 1988-02-17
JP3388088 1988-02-18
JP3387788 1988-02-18
JP3387888 1988-02-18
JP3387988 1988-02-18
JP4064788 1988-02-25
JP12392688 1988-05-23
JP12392588 1988-05-23
JP16512688 1988-07-04
JP16512488 1988-07-04
JP16512888 1988-07-04
JP16512588 1988-07-04
PCT/JP1989/000159 WO1989007786A1 (en) 1988-02-17 1989-02-17 Photoresist composition

Publications (2)

Publication Number Publication Date
DE68915148D1 DE68915148D1 (de) 1994-06-09
DE68915148T2 true DE68915148T2 (de) 1994-08-18

Family

ID=27583268

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68915148T Expired - Fee Related DE68915148T2 (de) 1988-02-17 1989-02-17 Fotoresist-zusammensetzung.

Country Status (5)

Country Link
US (1) US5212043A (de)
EP (1) EP0380676B1 (de)
KR (1) KR900700923A (de)
DE (1) DE68915148T2 (de)
WO (1) WO1989007786A1 (de)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE58908411D1 (de) * 1989-03-20 1994-10-27 Siemens Ag Hochauflösender Photoresist.
EP0388483B1 (de) * 1989-03-20 1994-11-30 Siemens Aktiengesellschaft Verfahren zum Erzeugen einer Photoresiststruktur
JP2847321B2 (ja) * 1990-08-14 1999-01-20 日本石油株式会社 ポジ型フォトレジスト組成物
JP3000745B2 (ja) * 1991-09-19 2000-01-17 富士通株式会社 レジスト組成物とレジストパターンの形成方法
JPH0659453A (ja) * 1992-08-07 1994-03-04 Nippon Oil Co Ltd ポジ型感光性樹脂組成物
US5410004A (en) * 1994-01-24 1995-04-25 Arizona Chemical Company Thermal polymerization of dicyclopentadiene
US5474877A (en) * 1994-02-24 1995-12-12 Nec Corporation Method for developing a resist pattern
WO1996024621A1 (de) * 1995-02-06 1996-08-15 Siemens Aktiengesellschaft Polymere für strahlungsempfindliche lacke
GB9520950D0 (en) * 1995-10-13 1995-12-13 Martinex R & D Inc Water-processable chemically amplified resist
US5807937A (en) * 1995-11-15 1998-09-15 Carnegie Mellon University Processes based on atom (or group) transfer radical polymerization and novel (co) polymers having useful structures and properties
JP2845225B2 (ja) * 1995-12-11 1999-01-13 日本電気株式会社 高分子化合物、それを用いた感光性樹脂組成物およびパターン形成方法
US6103845A (en) * 1996-10-11 2000-08-15 Samsung Electronics Co., Ltd. Chemically amplified resist polymers
US5962184A (en) * 1996-12-13 1999-10-05 International Business Machines Corporation Photoresist composition comprising a copolymer of a hydroxystyrene and a (meth)acrylate substituted with an alicyclic ester substituent
KR100211548B1 (ko) * 1996-12-20 1999-08-02 김영환 원자외선용 감광막 공중합체 및 그 제조방법
KR100265597B1 (ko) * 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
US6808859B1 (en) * 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
KR100220953B1 (ko) * 1996-12-31 1999-10-01 김영환 아미드 또는 이미드를 도입한 ArF 감광막 수지
KR100225956B1 (ko) * 1997-01-10 1999-10-15 김영환 아민을 도입한 에이알에프 감광막 수지
US6114084A (en) 1997-02-27 2000-09-05 Samsung Electronics Co. Ltd. Chemically amplified resist composition
KR100254472B1 (ko) * 1997-11-01 2000-05-01 김영환 신규한 말레이미드계 또는 지방족 환형 올레핀계 단량체와 이들 단량체들의 공중합체수지 및 이수지를 이용한 포토레지스트
KR100252546B1 (ko) * 1997-11-01 2000-04-15 김영환 공중합체 수지와 포토레지스트 및 그 제조방법
KR100321080B1 (ko) 1997-12-29 2002-11-22 주식회사 하이닉스반도체 공중합체수지와이의제조방법및이수지를이용한포토레지스트
KR100334387B1 (ko) * 1997-12-31 2002-11-22 주식회사 하이닉스반도체 공중합체수지와그제조방법및이수지를이용한포토레지스트
KR100520148B1 (ko) 1997-12-31 2006-05-12 주식회사 하이닉스반도체 신규한바이시클로알켄유도체와이를이용한포토레지스트중합체및이중합체를함유한포토레지스트조성물
KR100354871B1 (ko) 1997-12-31 2003-03-10 주식회사 하이닉스반도체 공중합체수지와그제조방법및이수지를이용한포토레지스트
KR100313150B1 (ko) * 1997-12-31 2001-12-28 박종섭 리소콜릴에시딜(메타)아크릴레이트 단량체와 그를 도입한 공중합체 수지 및 이 수지를 이용한 포토레지스트
KR100564535B1 (ko) * 1998-03-16 2006-05-25 삼성전자주식회사 포토레지스트, 이의 제조 방법 및 이를 이용한 사진 식각 방법
KR19990081722A (ko) 1998-04-30 1999-11-15 김영환 카르복실기 함유 지환족 유도체 및 그의 제조방법
KR100376983B1 (ko) 1998-04-30 2003-08-02 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
KR100403325B1 (ko) 1998-07-27 2004-03-24 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한포토레지스트조성물
KR20000015014A (ko) 1998-08-26 2000-03-15 김영환 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물
JP3587743B2 (ja) 1998-08-26 2004-11-10 株式会社ハイニックスセミコンダクター フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。
US6569971B2 (en) * 1998-08-27 2003-05-27 Hyundai Electronics Industries Co., Ltd. Polymers for photoresist and photoresist compositions using the same
KR100274119B1 (ko) * 1998-10-08 2001-03-02 박찬구 감방사선성 레지스트 제조용 중합체 및 이를 함유하는 레지스트조성물
JP3680920B2 (ja) * 1999-02-25 2005-08-10 信越化学工業株式会社 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法
KR100557620B1 (ko) * 1999-07-30 2006-03-10 주식회사 하이닉스반도체 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
TW554254B (en) * 1999-08-06 2003-09-21 Hyundai Electronics Ind Novel photoresist monomers, polymers thereof and photoresist compositions using the same
KR100425442B1 (ko) * 1999-08-24 2004-03-30 삼성전자주식회사 감광성 중합체 및 이를 포함하는 화학 증폭형포토레지스트 조성물
US6692888B1 (en) * 1999-10-07 2004-02-17 Shipley Company, L.L.C. Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same
US6423780B1 (en) * 2001-02-07 2002-07-23 Loctite Heterobifunctional monomers and uses therefor
US6521731B2 (en) * 2001-02-07 2003-02-18 Henkel Loctite Corporation Radical polymerizable compositions containing polycyclic olefins
US6946523B2 (en) * 2001-02-07 2005-09-20 Henkel Corporation Heterobifunctional monomers and uses therefor
US7138218B2 (en) * 2001-12-18 2006-11-21 Hynix Semiconductor Inc. Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator
US7338742B2 (en) * 2003-10-08 2008-03-04 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
US7270937B2 (en) * 2003-10-17 2007-09-18 Hynix Semiconductor Inc. Over-coating composition for photoresist and process for forming photoresist pattern using the same
KR100680405B1 (ko) * 2003-11-19 2007-02-08 주식회사 하이닉스반도체 Ｅｕｖ용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법
EP1725590A4 (de) * 2004-03-05 2013-08-07 Univ Carnegie Mellon Verfahren zur atom transfer radical polymerization
US8273823B2 (en) 2005-08-23 2012-09-25 Carnegie Mellon University Atom transfer radical polymerization in microemulsion and true emulsion polymerization processes
DE602006017416D1 (de) * 2005-08-26 2010-11-18 Univ Carnegie Mellon Polymerisationsverfahren mit katalysatorreaktivierung
KR100731326B1 (ko) * 2005-12-16 2007-06-25 주식회사 삼양이엠에스 양성 포토레지스트 조성물
KR100694412B1 (ko) * 2006-02-24 2007-03-12 주식회사 하이닉스반도체 반도체소자의 미세패턴 형성방법
US7745339B2 (en) * 2006-02-24 2010-06-29 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
US7579420B2 (en) 2006-04-04 2009-08-25 E. I. Du Pont De Nemours And Company Hyperbranched maleic anhydride-diene polymers
US7579403B2 (en) * 2006-04-04 2009-08-25 E. I. Du Pont De Nemours And Company Stain resist comprising hyperbranched maleic anhydride-diene polymers
US8313876B2 (en) * 2006-07-20 2012-11-20 Hynix Semiconductor Inc. Exposure mask and method for manufacturing semiconductor device using the same
KR100849800B1 (ko) * 2006-07-20 2008-07-31 주식회사 하이닉스반도체 노광 마스크 및 이를 이용한 반도체 소자의 제조 방법
US8367051B2 (en) * 2006-10-09 2013-02-05 Carnegie Mellon University Preparation of functional gel particles with a dual crosslink network
KR100861173B1 (ko) * 2006-12-01 2008-09-30 주식회사 하이닉스반도체 액침 노광 공정을 이용한 반도체 소자의 패턴 형성 방법
US20080274424A1 (en) * 2007-05-05 2008-11-06 Yisong Yu Positive photosensitive element comprising vinyl polymers
WO2009023353A1 (en) * 2007-05-23 2009-02-19 Carnegie Mellon University Hybrid particle composite structures with reduced scattering
US8252880B2 (en) * 2007-05-23 2012-08-28 Carnegie Mellon University Atom transfer dispersion polymerization
GB2481561B (en) 2009-03-27 2013-12-11 Univ Carnegie Mellon Preparation of functional star macromolecules
US8475667B2 (en) 2010-06-22 2013-07-02 International Business Machines Corporation Method of patterning photosensitive material on a substrate containing a latent acid generator
US8449781B2 (en) 2010-06-22 2013-05-28 International Business Machines Corporation Selective etch back process for carbon nanotubes intergration
US8853856B2 (en) 2010-06-22 2014-10-07 International Business Machines Corporation Methodology for evaluation of electrical characteristics of carbon nanotubes
WO2012091965A1 (en) 2010-12-17 2012-07-05 Carnegie Mellon University Electrochemically mediated atom transfer radical polymerization
KR101496976B1 (ko) 2011-07-14 2015-03-02 스미토모 베이클리트 컴퍼니 리미티드 화학 방사선에 대한 이미지-와이즈 노광 후에 패턴화된 층을 형성하는 중합체 및 이의 조성물
EP2747753B1 (de) 2011-08-22 2023-03-29 Carnegie Mellon University Radikalische atomtransfer-polymerisation unter biologisch verträglichen bedingungen
WO2013126745A2 (en) 2012-02-23 2013-08-29 Carnegie Mellon University Ligands designed to provide highly active catalyst complexes
JP6321811B2 (ja) * 2013-09-16 2018-05-09 プロメラス， エルエルシー アミン処理無水マレイン酸ポリマー、組成物およびそれらの利用
WO2015133306A1 (ja) * 2014-03-06 2015-09-11 住友ベークライト株式会社 ポリマー、感光性樹脂組成物および電子装置
US9982070B2 (en) 2015-01-12 2018-05-29 Carnegie Mellon University Aqueous ATRP in the presence of an activator regenerator
TWI659046B (zh) * 2015-05-06 2019-05-11 Sumitomo Bakelite Co., Ltd. 作爲永久介電材料的順丁烯二醯亞胺及環烯烴單體之聚合物
TWI692674B (zh) 2015-12-31 2020-05-01 日商住友電木股份有限公司 衍生自降莰二烯和馬來酸酐之聚合物及其用途
US11174325B2 (en) 2017-01-12 2021-11-16 Carnegie Mellon University Surfactant assisted formation of a catalyst complex for emulsion atom transfer radical polymerization processes
US10738241B2 (en) * 2018-01-23 2020-08-11 Shenzhen China Star Optoelectronics Technology Co., Ltd. Resin composition, cured photoresist and display panel

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3188303A (en) * 1961-03-17 1965-06-08 Velsicol Chemical Corp Process and product relating to the reaction of dicyclopentadiene and alpha, beta di-and tri-carboxylic acids
GB1243963A (en) * 1967-08-15 1971-08-25 Howson Algraphy Ltd Improvements in or relating to light sensitive lithographic plates
DE2365051B2 (de) * 1972-12-29 1979-08-02 Nippon Oil Co., Ltd., Tokio Verfahren zur Herstellung von modifizierten Kohlenwasserstoffharzen für Druckfarben
JPS5421089B2 (de) * 1973-05-29 1979-07-27
US4106943A (en) * 1973-09-27 1978-08-15 Japan Synthetic Rubber Co., Ltd. Photosensitive cross-linkable azide containing polymeric composition
US4126738A (en) * 1976-02-17 1978-11-21 Borg-Warner Corporation Copolymers of 5-norbornene 2,3-dicarboxylic anhydride and maleic anhydride
JPS5640220A (en) * 1979-09-10 1981-04-16 Hitachi Chem Co Ltd Manufacturing of flyback transformer
JPS56122031A (en) * 1980-03-01 1981-09-25 Japan Synthetic Rubber Co Ltd Positive type photosensitive resin composition
DE3043967A1 (de) * 1980-11-21 1982-06-24 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch auf basis von o-naphthochinondiaziden und daraus hergestelltes lichtempfindliches kopiermaterial
JPS57151396A (en) * 1981-03-14 1982-09-18 Ricoh Co Ltd Diazo system heat-sensitive recording material
EP0099949B1 (de) * 1982-07-27 1985-12-11 E.I. Du Pont De Nemours And Company Wässrig entwickelbare, positiv arbeitende Photopolymerzusammensetzungen
JPS5940641A (ja) * 1982-08-31 1984-03-06 Toshiba Corp 高解像度用ネガ型フオトレジスト組成物
JPS59170836A (ja) * 1983-03-16 1984-09-27 Sumitomo Chem Co Ltd ポジ型フオトレジスト組成物
US4571375A (en) * 1983-10-24 1986-02-18 Benedikt George M Ring-opened polynorbornene negative photoresist with bisazide
US5059513A (en) * 1983-11-01 1991-10-22 Hoechst Celanese Corporation Photochemical image process of positive photoresist element with maleimide copolymer
DE3468542D1 (en) * 1983-11-03 1988-02-11 Basf Ag Photopolymerisable registration material for the preparation of printing forms and process for the production of printing forms with this materials
JPH064832B2 (ja) * 1984-10-05 1994-01-19 三井石油化学工業株式会社 重合体用接着剤
US4663268A (en) * 1984-12-28 1987-05-05 Eastman Kodak Company High-temperature resistant photoresists featuring maleimide binders
US4980264A (en) * 1985-12-17 1990-12-25 International Business Machines Corporation Photoresist compositions of controlled dissolution rate in alkaline developers
US4720445A (en) * 1986-02-18 1988-01-19 Allied Corporation Copolymers from maleimide and aliphatic vinyl ethers and esters used in positive photoresist
DE3606155A1 (de) * 1986-02-26 1987-08-27 Basf Ag Photopolymerisierbares gemisch, dieses enthaltendes lichtempfindliches aufzeichnungselement sowie verfahren zur herstellung einer flachdruckform mittels dieses lichtempfindlichen aufzeichnungselements
DE58908012D1 (de) * 1989-03-20 1994-08-11 Siemens Ag Lichtempfindliches Gemisch.

Also Published As

Publication number Publication date
US5212043A (en) 1993-05-18
EP0380676A1 (de) 1990-08-08
KR900700923A (ko) 1990-08-17
DE68915148D1 (de) 1994-06-09
WO1989007786A1 (en) 1989-08-24
EP0380676B1 (de) 1994-05-04

Similar Documents

Publication Publication Date Title
DE68915148T2 (de) Fotoresist-zusammensetzung.
DE68921146T2 (de) Lichtempfindliche Zusammensetzung.
DE68921867D1 (de) Photopolymerisierbare Zusammensetzung.
DE68921019T2 (de) Lichtempfindliche Zusammensetzungen.
DE68907659D1 (de) Warmhaertende organosiloxanzusammensetzung.
DE68914176D1 (de) Photopolymerisierbare Zusammensetzung.
DE69014913T2 (de) Lichtempfindliche Zusammensetzung.
DE68927140D1 (de) Photolackzusammensetzung
DE59009431D1 (de) Photoresist.
DE3853694D1 (de) Photolackzusammensetzung.
DE68916395D1 (de) Zusammensetzung.
DE3851921T2 (de) Photopolymerisierbare Zusammensetzung.
DE68924246D1 (de) Tonerzusammensetzung.
DE3888400D1 (de) Photoresistzusammensetzungen.
DE68919102D1 (de) Photopolymerisierbare Zusammensetzung.
DE68906193D1 (de) Hypersphyxia verursachende zusammensetzung.
DE68922901T2 (de) Photoresistzusammensetzung.
DE68911786T2 (de) Lichtempfindliche Zusammensetzung.
DE68903729D1 (de) Tertiaere thiolaethoxylat-zusammensetzung.
DE68920186D1 (de) Photopolymerisierbare Zusammensetzungen.
DE69033790D1 (de) Photolackzusammensetzung
DE69023605D1 (de) Positive Fotolackzusammensetzung.
FI892552A (fi) Benzoyl- och ketonperoxidkomposition.
DE3779558D1 (de) Photoresist-zusammensetzungen.
DE3889692T2 (de) Photopolymerisierbare Zusammensetzung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee