DE68915072D1 - Integrierte Halbleiterschaltung für ein Radio. - Google Patents

Integrierte Halbleiterschaltung für ein Radio.

Info

Publication number
DE68915072D1
DE68915072D1 DE68915072T DE68915072T DE68915072D1 DE 68915072 D1 DE68915072 D1 DE 68915072D1 DE 68915072 T DE68915072 T DE 68915072T DE 68915072 T DE68915072 T DE 68915072T DE 68915072 D1 DE68915072 D1 DE 68915072D1
Authority
DE
Germany
Prior art keywords
radio
semiconductor circuit
integrated semiconductor
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68915072T
Other languages
English (en)
Other versions
DE68915072T2 (de
Inventor
Kazuo Tomizuka
Sakae Sugayama
Takao Saeki
Fumio Sandoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63173007A external-priority patent/JPH0652771B2/ja
Priority claimed from JP63202197A external-priority patent/JPH0750779B2/ja
Priority claimed from JP63291450A external-priority patent/JPH0821617B2/ja
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of DE68915072D1 publication Critical patent/DE68915072D1/de
Application granted granted Critical
Publication of DE68915072T2 publication Critical patent/DE68915072T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
    • H01L23/5286Arrangements of power or ground buses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06Receivers
    • H04B1/16Circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE68915072T 1988-07-12 1989-07-12 Integrierte Halbleiterschaltung für ein Radio. Expired - Lifetime DE68915072T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63173007A JPH0652771B2 (ja) 1988-07-12 1988-07-12 リニア半導体集積回路
JP63202197A JPH0750779B2 (ja) 1988-08-12 1988-08-12 半導体集積回路
JP63291450A JPH0821617B2 (ja) 1988-11-17 1988-11-17 半導体集積回路

Publications (2)

Publication Number Publication Date
DE68915072D1 true DE68915072D1 (de) 1994-06-09
DE68915072T2 DE68915072T2 (de) 1994-12-08

Family

ID=27323716

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68915072T Expired - Lifetime DE68915072T2 (de) 1988-07-12 1989-07-12 Integrierte Halbleiterschaltung für ein Radio.

Country Status (4)

Country Link
US (2) US5050238A (de)
EP (1) EP0354371B1 (de)
KR (1) KR920005802B1 (de)
DE (1) DE68915072T2 (de)

Families Citing this family (44)

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US5155570A (en) * 1988-06-21 1992-10-13 Sanyo Electric Co., Ltd. Semiconductor integrated circuit having a pattern layout applicable to various custom ICs
KR920005863B1 (ko) * 1988-08-12 1992-07-23 산요덴끼 가부시끼가이샤 반도체 집적회로
US5780918A (en) * 1990-05-22 1998-07-14 Seiko Epson Corporation Semiconductor integrated circuit device having a programmable adjusting element in the form of a fuse mounted on a margin of the device and a method of manufacturing the same
US5151769A (en) * 1991-04-04 1992-09-29 General Electric Company Optically patterned RF shield for an integrated circuit chip for analog and/or digital operation at microwave frequencies
JPH05152291A (ja) * 1991-11-29 1993-06-18 Mitsubishi Electric Corp 半導体集積回路装置
JP3252569B2 (ja) * 1993-11-09 2002-02-04 株式会社デンソー 絶縁分離基板及びそれを用いた半導体装置及びその製造方法
WO1995022839A1 (en) * 1994-02-17 1995-08-24 National Semiconductor Corporation Packaged integrated circuit with reduced electromagnetic interference
US5828110A (en) * 1995-06-05 1998-10-27 Advanced Micro Devices, Inc. Latchup-proof I/O circuit implementation
GB9513420D0 (en) * 1995-06-30 1995-09-06 Philips Electronics Uk Ltd Power semiconductor devices
KR100415567B1 (ko) * 2001-10-16 2004-01-24 삼성전기주식회사 더블 컨버젼방식 알에프 튜너
JP3681677B2 (ja) 2001-11-21 2005-08-10 テクノポリマー株式会社 ポリマー片の洗浄装置
US20030114129A1 (en) * 2001-12-17 2003-06-19 Jerng Albert C. System and method for a radio frequency receiver front end utilizing a balun to couple a low-noise amplifier to a mixer
JP2003273231A (ja) * 2002-03-19 2003-09-26 Fujitsu Ltd 半導体集積回路のシールド構造
JP2003318754A (ja) * 2002-04-24 2003-11-07 Alps Electric Co Ltd テレビジョンチューナ
JP3677011B2 (ja) * 2002-04-30 2005-07-27 アルプス電気株式会社 液晶表示装置
US6657285B1 (en) * 2002-07-08 2003-12-02 Alcor Micro, Corp. Semiconductor anti-interference band for integrated circuit
US7493094B2 (en) * 2005-01-19 2009-02-17 Micro Mobio Corporation Multi-mode power amplifier module for wireless communication devices
US6774718B2 (en) * 2002-07-19 2004-08-10 Micro Mobio Inc. Power amplifier module for wireless communication devices
US20040232982A1 (en) * 2002-07-19 2004-11-25 Ikuroh Ichitsubo RF front-end module for wireless communication devices
US7071783B2 (en) * 2002-07-19 2006-07-04 Micro Mobio Corporation Temperature-compensated power sensing circuit for power amplifiers
DE10313868B4 (de) * 2003-03-21 2009-11-19 Siemens Ag Katheter zur magnetischen Navigation
JP3100213U (ja) * 2003-09-03 2004-05-13 アルプス電気株式会社 テレビジョンチューナ
JP3100214U (ja) * 2003-09-03 2004-05-13 アルプス電気株式会社 テレビジョンチューナ
US20050205986A1 (en) * 2004-03-18 2005-09-22 Ikuroh Ichitsubo Module with integrated active substrate and passive substrate
US7254371B2 (en) * 2004-08-16 2007-08-07 Micro-Mobio, Inc. Multi-port multi-band RF switch
US7262677B2 (en) * 2004-10-25 2007-08-28 Micro-Mobio, Inc. Frequency filtering circuit for wireless communication devices
US7389090B1 (en) 2004-10-25 2008-06-17 Micro Mobio, Inc. Diplexer circuit for wireless communication devices
US20060089099A1 (en) * 2004-10-26 2006-04-27 Buchwald Gregory J Method and apparatus for allowing communication units to utilize non-licensed spectrum
US7239624B2 (en) * 2004-10-26 2007-07-03 Motorola, Inc. Method and apparatus for allowing communication units to utilize non-licensed title spectrum
US7221225B2 (en) 2004-12-03 2007-05-22 Micro-Mobio Dual band power amplifier module for wireless communication devices
US8716834B2 (en) * 2004-12-24 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including antenna
US7769355B2 (en) * 2005-01-19 2010-08-03 Micro Mobio Corporation System-in-package wireless communication device comprising prepackaged power amplifier
US7348842B2 (en) * 2005-01-19 2008-03-25 Micro-Mobio Multi-substrate RF module for wireless communication devices
US7580687B2 (en) 2005-01-19 2009-08-25 Micro Mobio Corporation System-in-package wireless communication device comprising prepackaged power amplifier
US7548111B2 (en) * 2005-01-19 2009-06-16 Micro Mobio Corporation Miniature dual band power amplifier with reserved pins
US7119614B2 (en) * 2005-01-19 2006-10-10 Micro-Mobio Multi-band power amplifier module for wireless communications
US7084702B1 (en) 2005-01-19 2006-08-01 Micro Mobio Corp. Multi-band power amplifier module for wireless communication devices
US20070063982A1 (en) * 2005-09-19 2007-03-22 Tran Bao Q Integrated rendering of sound and image on a display
US7477204B2 (en) * 2005-12-30 2009-01-13 Micro-Mobio, Inc. Printed circuit board based smart antenna
JP2007243863A (ja) * 2006-03-13 2007-09-20 Niigata Seimitsu Kk Amラジオ付き携帯機器
US7477108B2 (en) * 2006-07-14 2009-01-13 Micro Mobio, Inc. Thermally distributed integrated power amplifier module
US20090275286A1 (en) * 2008-04-30 2009-11-05 Motorola, Inc. Utilization of cognitive radios with mobile virtual private network (mvpn) solutions
JP6132692B2 (ja) * 2013-07-19 2017-05-24 株式会社東芝 アンテナ装置
EP4068337A4 (de) * 2019-12-18 2023-01-25 Huawei Technologies Co., Ltd. Chip-struktur und drahtlose kommunikationsvorrichtung

Family Cites Families (29)

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Publication number Priority date Publication date Assignee Title
US3489953A (en) * 1964-09-18 1970-01-13 Texas Instruments Inc Stabilized integrated circuit and process for fabricating same
US3723882A (en) * 1971-08-02 1973-03-27 Zenith Radio Corp Multi-band television tuner arrangement
JPS547196B2 (de) * 1971-08-26 1979-04-04
JPS4982646U (de) * 1972-11-02 1974-07-17
US3886458A (en) * 1972-12-12 1975-05-27 Sony Corp Frequency converter circuit with integrated injection capacitor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
JPS51135383A (en) * 1975-05-20 1976-11-24 Sony Corp Semiconductor variable capacitance device
US4135158A (en) * 1975-06-02 1979-01-16 Motorola, Inc. Universal automotive electronic radio
JPS5833708B2 (ja) * 1977-01-31 1983-07-21 株式会社東芝 集積回路装置
DE2835930C2 (de) * 1978-08-17 1986-07-17 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte Halbleiterschaltungsanordnung mit mindestens einem Lateraltransistor
US4412238A (en) * 1980-05-27 1983-10-25 National Semiconductor Corporation Simplified BIFET structure
US4383273A (en) * 1980-12-29 1983-05-10 Motorola, Inc. Large scale, single chip integrated circuit television receiver subsystems
GB2097581A (en) * 1981-04-24 1982-11-03 Hitachi Ltd Shielding semiconductor integrated circuit devices from light
DE3133760C2 (de) * 1981-08-26 1983-09-01 Deutsche Thomson-Brandt Gmbh, 7730 Villingen-Schwenningen Empfangsstufe für Rundfunk- und Fernsehempfänger
JPS58157151A (ja) * 1982-03-15 1983-09-19 Mitsubishi Electric Corp 半導体集積回路装置
DE3231952A1 (de) * 1982-08-27 1984-03-01 Dieter 4600 Dortmund Krebs Autoradio
JPS5984542A (ja) * 1982-11-08 1984-05-16 Nec Corp 高周波半導体集積回路
JPS601843A (ja) * 1983-06-17 1985-01-08 Sanyo Electric Co Ltd 半導体集積回路
JPS6035537A (ja) * 1983-08-08 1985-02-23 Nec Corp 半導体集積回路
US4661998A (en) * 1983-09-22 1987-04-28 Matsushita Electric Industrial Co. Ltd. Double superheterodyne tuner
JPS60154644A (ja) * 1984-01-25 1985-08-14 Hitachi Ltd 半導体装置
JPS60165752A (ja) * 1984-02-08 1985-08-28 Nec Corp 半導体集積回路
JPS60192359A (ja) * 1984-03-14 1985-09-30 Nec Corp 半導体メモリ装置
JPS61137407A (ja) * 1984-12-08 1986-06-25 New Japan Radio Co Ltd 周波数変換器
JPS61150410A (ja) * 1984-12-24 1986-07-09 Sony Corp チユ−ナ装置
JPS61218155A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd 半導体集積回路装置
JPS61276365A (ja) * 1985-05-31 1986-12-06 Oki Electric Ind Co Ltd 半導体装置
JPS6212147A (ja) * 1985-07-10 1987-01-21 Hitachi Ltd マスタ−スライス方式の半導体装置
US4970565A (en) * 1988-09-01 1990-11-13 Atmel Corporation Sealed charge storage structure

Also Published As

Publication number Publication date
KR900002446A (ko) 1990-02-28
EP0354371A2 (de) 1990-02-14
KR920005802B1 (ko) 1992-07-18
US5050238A (en) 1991-09-17
US5111274A (en) 1992-05-05
EP0354371A3 (en) 1990-11-07
DE68915072T2 (de) 1994-12-08
EP0354371B1 (de) 1994-05-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition