DE60231886D1 - Zusammensetzung zur bildung eines antireflexfilms zur verwendung bei der lithographie - Google Patents

Zusammensetzung zur bildung eines antireflexfilms zur verwendung bei der lithographie

Info

Publication number
DE60231886D1
DE60231886D1 DE60231886T DE60231886T DE60231886D1 DE 60231886 D1 DE60231886 D1 DE 60231886D1 DE 60231886 T DE60231886 T DE 60231886T DE 60231886 T DE60231886 T DE 60231886T DE 60231886 D1 DE60231886 D1 DE 60231886D1
Authority
DE
Germany
Prior art keywords
antireflex
lithography
film
composition
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60231886T
Other languages
English (en)
Inventor
S Arase
T Kishioka
Mizusawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Application granted granted Critical
Publication of DE60231886D1 publication Critical patent/DE60231886D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
DE60231886T 2001-08-20 2002-08-13 Zusammensetzung zur bildung eines antireflexfilms zur verwendung bei der lithographie Expired - Lifetime DE60231886D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001248878 2001-08-20
PCT/JP2002/008244 WO2003017002A1 (fr) 2001-08-20 2002-08-13 Composition permettant la formation d'un film anti-reflechissant destine a etre utilise en lithographie

Publications (1)

Publication Number Publication Date
DE60231886D1 true DE60231886D1 (de) 2009-05-20

Family

ID=19077964

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60231886T Expired - Lifetime DE60231886D1 (de) 2001-08-20 2002-08-13 Zusammensetzung zur bildung eines antireflexfilms zur verwendung bei der lithographie

Country Status (8)

Country Link
US (1) US7326509B2 (de)
EP (1) EP1426822B1 (de)
JP (1) JP3985165B2 (de)
KR (1) KR100945435B1 (de)
CN (1) CN100362430C (de)
DE (1) DE60231886D1 (de)
TW (1) TW574630B (de)
WO (1) WO2003017002A1 (de)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101042667B1 (ko) * 2004-07-05 2011-06-20 주식회사 동진쎄미켐 포토레지스트 조성물
KR100598176B1 (ko) 2004-07-06 2006-07-10 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물
KR100882794B1 (ko) 2005-03-01 2009-02-09 제이에스알 가부시끼가이샤 레지스트 하층막용 조성물 및 그의 제조 방법
EP1742108B1 (de) * 2005-07-05 2015-10-28 Rohm and Haas Electronic Materials, L.L.C. Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
US20070231736A1 (en) * 2006-03-28 2007-10-04 Chen Kuang-Jung J Bottom antireflective coating composition and method for use thereof
US7563563B2 (en) 2006-04-18 2009-07-21 International Business Machines Corporation Wet developable bottom antireflective coating composition and method for use thereof
US8227172B2 (en) 2006-10-12 2012-07-24 Nissan Chemical Industries, Ltd. Method of producing semiconductor device using resist underlayer film by photo-crosslinking curing
TWI427423B (zh) * 2006-10-12 2014-02-21 Nissan Chemical Ind Ltd 藉由４層系層合物製造半導體裝置之方法
JP5158381B2 (ja) * 2007-07-11 2013-03-06 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JP5168517B2 (ja) 2007-10-31 2013-03-21 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
KR101585992B1 (ko) * 2007-12-20 2016-01-19 삼성전자주식회사 반사방지 코팅용 고분자, 반사방지 코팅용 조성물 및 이를 이용한 반도체 장치의 패턴 형성 방법
WO2009104685A1 (ja) 2008-02-21 2009-08-27 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JP2011252074A (ja) * 2010-06-02 2011-12-15 Mitsubishi Rayon Co Ltd 半導体フォトリソグラフィ用重合体の精製方法
CN103907060B (zh) * 2011-10-20 2018-05-01 日产化学工业株式会社 形成抗蚀剂下层膜的组合物所用的添加剂及包含该添加剂的形成抗蚀剂下层膜的组合物
CN104221127B (zh) * 2011-12-19 2017-04-12 佳能纳米技术公司 用于压印光刻的无缝大面积主模板的制造
US9195137B2 (en) 2012-03-08 2015-11-24 Nissan Chemical Industries, Ltd. Composition for forming highly adhesive resist underlayer film
US9212255B2 (en) 2012-05-07 2015-12-15 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition
KR102154109B1 (ko) 2013-02-08 2020-09-09 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 리소그래피용 하층막 형성재료, 리소그래피용 하층막 및 패턴 형성방법
WO2014123032A1 (ja) 2013-02-08 2014-08-14 三菱瓦斯化学株式会社 レジスト組成物、レジストパターン形成方法及びそれに用いるポリフェノール誘導体
WO2014123107A1 (ja) * 2013-02-08 2014-08-14 三菱瓦斯化学株式会社 化合物、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法
JP6263378B2 (ja) * 2013-02-20 2018-01-17 東京応化工業株式会社 下地剤及びパターン形成方法
CN105393172B (zh) 2013-07-23 2019-08-02 日产化学工业株式会社 抗蚀剂下层膜形成用组合物用添加剂及包含其的抗蚀剂下层膜形成用组合物
JP6493683B2 (ja) 2013-12-19 2019-04-03 日産化学株式会社 ラクトン構造含有ポリマーを含む電子線レジスト下層膜形成組成物
CN106133606B (zh) 2014-03-26 2019-06-28 日产化学工业株式会社 添加剂以及包含该添加剂的抗蚀剂下层膜形成用组合物
JP5751457B2 (ja) * 2014-04-08 2015-07-22 三菱レイヨン株式会社 半導体フォトリソグラフィ用重合体の精製方法
US10745372B2 (en) 2014-12-25 2020-08-18 Mitsubishi Gas Chemical Company, Inc. Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method
JP6766803B2 (ja) 2015-03-31 2020-10-14 三菱瓦斯化学株式会社 レジスト組成物、レジストパターン形成方法、及びそれに用いるポリフェノール化合物
JP6845991B2 (ja) 2015-03-31 2021-03-24 三菱瓦斯化学株式会社 化合物、レジスト組成物及びそれを用いるレジストパターン形成方法
KR20180048799A (ko) 2015-08-31 2018-05-10 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 하층막 형성재료, 리소그래피용 하층막 형성용 조성물, 리소그래피용 하층막 및 그 제조방법, 그리고 레지스트 패턴형성방법
WO2017038645A1 (ja) 2015-08-31 2017-03-09 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びその製造方法、パターン形成方法、樹脂、並びに精製方法
EP3348542A4 (de) 2015-09-10 2019-04-03 Mitsubishi Gas Chemical Company, Inc. Verbindung, harz, resistzusammensetzung oder strahlungsempfindliche zusammensetzung, verfahren zur bildung einer resiststruktur, verfahren zur herstellung eines amorphen films, material zur bildung eines lithografischen unterschichtfilms, zusammensetzung zur herstellung eines lithografischen unterschichtfilms, verfahren zur herstellung einer schaltstruktur und reinigungsverfahren
KR102361878B1 (ko) 2015-11-17 2022-02-11 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물용 첨가제 및 이 첨가제를 포함하는 레지스트 하층막 형성 조성물
JP6711397B2 (ja) 2016-03-30 2020-06-17 日産化学株式会社 グリコールウリル骨格を持つ化合物を添加剤として含むレジスト下層膜形成組成物
TWI750225B (zh) 2016-09-15 2021-12-21 日商日產化學工業股份有限公司 光阻下層膜形成組成物
CN118011734A (zh) 2017-02-03 2024-05-10 日产化学株式会社 包含具有含脲键的结构单元的聚合物的抗蚀剂下层膜形成用组合物
KR102604698B1 (ko) * 2017-06-05 2023-11-23 주식회사 동진쎄미켐 높은 식각비를 갖는 유기 반사 방지막 형성용 조성물
JP7145143B2 (ja) 2019-12-12 2022-09-30 信越化学工業株式会社 有機膜形成材料、有機膜の形成方法、パターン形成方法、および化合物
JP7285209B2 (ja) 2019-12-26 2023-06-01 信越化学工業株式会社 下層膜形成材料、下層膜の形成方法、及びパターン形成方法
JP7316237B2 (ja) 2020-03-02 2023-07-27 信越化学工業株式会社 有機膜形成材料、有機膜形成方法、パターン形成方法及び化合物
JP2023008657A (ja) 2021-07-06 2023-01-19 信越化学工業株式会社 密着膜形成材料、これを用いた密着膜の形成方法、及び密着膜形成材料を用いたパターン形成方法
JP2023045354A (ja) 2021-09-22 2023-04-03 信越化学工業株式会社 密着膜形成材料、パターン形成方法、及び密着膜の形成方法
JP2023094359A (ja) 2021-12-23 2023-07-05 信越化学工業株式会社 密着膜形成材料、パターン形成方法、及び密着膜の形成方法
JP2024027460A (ja) 2022-08-17 2024-03-01 信越化学工業株式会社 パターン形成方法
JP2024027459A (ja) 2022-08-17 2024-03-01 信越化学工業株式会社 密着膜形成用組成物、パターン形成方法、及び密着膜の形成方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US560782A (en) * 1896-05-26 Leather-working machine
US4521570A (en) * 1981-06-19 1985-06-04 Daicel Chemical Industries, Ltd. Modified epoxy resin and composition
JPH06348036A (ja) 1993-06-10 1994-12-22 Shin Etsu Chem Co Ltd レジストパターン形成方法
DE69431618T2 (de) * 1993-12-28 2003-04-03 Fujitsu Ltd Strahlungsempfindliches Material und Verfahren zur Herstellung eines Musters
US5607824A (en) * 1994-07-27 1997-03-04 International Business Machines Corporation Antireflective coating for microlithography
US5693691A (en) * 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
JP3805836B2 (ja) * 1996-08-06 2006-08-09 関西ペイント株式会社 アニオン型艶消し電着塗料
JP3852868B2 (ja) * 1997-02-06 2006-12-06 富士写真フイルム株式会社 反射防止膜材料組成物及びそれを用いたレジストパターン形成方法
JPH1172925A (ja) * 1997-07-03 1999-03-16 Toshiba Corp 下層膜用組成物およびこれを用いたパターン形成方法
US6054254A (en) * 1997-07-03 2000-04-25 Kabushiki Kaisha Toshiba Composition for underlying film and method of forming a pattern using the film
US5919599A (en) * 1997-09-30 1999-07-06 Brewer Science, Inc. Thermosetting anti-reflective coatings at deep ultraviolet
KR100382960B1 (ko) * 1998-07-03 2003-05-09 닛뽕덴끼 가부시끼가이샤 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법
JP3042618B2 (ja) * 1998-07-03 2000-05-15 日本電気株式会社 ラクトン構造を有する（メタ）アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法
JP2000098610A (ja) * 1998-09-17 2000-04-07 Fuji Photo Film Co Ltd ポジ型感光性組成物
JP3821961B2 (ja) * 1998-09-25 2006-09-13 株式会社ルネサステクノロジ パターン形成方法及び半導体装置の製造方法及び感放射線組成物
ATE258250T1 (de) 1998-10-09 2004-02-15 Metso Paper Karlstad Ab Verfahren und vorrichtung für die montage und demontage eines verschleissteils in einer papiermaschine
US6316165B1 (en) * 1999-03-08 2001-11-13 Shipley Company, L.L.C. Planarizing antireflective coating compositions
JP4288776B2 (ja) * 1999-08-03 2009-07-01 Ｊｓｒ株式会社 反射防止膜形成組成物
KR100389912B1 (ko) * 1999-12-08 2003-07-04 삼성전자주식회사 지환식 감광성 폴리머 및 이를 포함하는 레지스트 조성물
JP2001215704A (ja) * 2000-01-31 2001-08-10 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
US20030215736A1 (en) * 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating

Also Published As

Publication number Publication date
WO2003017002A1 (fr) 2003-02-27
CN100362430C (zh) 2008-01-16
JP3985165B2 (ja) 2007-10-03
EP1426822B1 (de) 2009-04-08
JPWO2003017002A1 (ja) 2004-12-09
TW574630B (en) 2004-02-01
KR20040037282A (ko) 2004-05-06
KR100945435B1 (ko) 2010-03-05
EP1426822A4 (de) 2007-05-09
US7326509B2 (en) 2008-02-05
US20040197709A1 (en) 2004-10-07
EP1426822A1 (de) 2004-06-09
CN1545645A (zh) 2004-11-10

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