DE60209652D1 - Verfahren zur Messung der Aberration eines lithographischen Projektionssystems - Google Patents

Verfahren zur Messung der Aberration eines lithographischen Projektionssystems

Info

Publication number
DE60209652D1
DE60209652D1 DE60209652T DE60209652T DE60209652D1 DE 60209652 D1 DE60209652 D1 DE 60209652D1 DE 60209652 T DE60209652 T DE 60209652T DE 60209652 T DE60209652 T DE 60209652T DE 60209652 D1 DE60209652 D1 DE 60209652D1
Authority
DE
Germany
Prior art keywords
aberration
measuring
projection system
lithographic projection
lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60209652T
Other languages
English (en)
Other versions
DE60209652T2 (de
Inventor
Der Laan Hans Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of DE60209652D1 publication Critical patent/DE60209652D1/de
Application granted granted Critical
Publication of DE60209652T2 publication Critical patent/DE60209652T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE60209652T 2001-08-23 2002-08-22 Verfahren zur Messung der Aberration eines lithographischen Projektionssystems Expired - Lifetime DE60209652T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01203188 2001-08-23
EP01203188 2001-08-23

Publications (2)

Publication Number Publication Date
DE60209652D1 true DE60209652D1 (de) 2006-05-04
DE60209652T2 DE60209652T2 (de) 2006-12-21

Family

ID=8180822

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60209652T Expired - Lifetime DE60209652T2 (de) 2001-08-23 2002-08-22 Verfahren zur Messung der Aberration eines lithographischen Projektionssystems

Country Status (5)

Country Link
US (1) US6787789B2 (de)
JP (1) JP4073735B2 (de)
KR (1) KR100562190B1 (de)
DE (1) DE60209652T2 (de)
TW (1) TWI254837B (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100893516B1 (ko) * 2000-12-28 2009-04-16 가부시키가이샤 니콘 결상특성 계측방법, 결상특성 조정방법, 노광방법 및노광장치, 프로그램 및 기록매체, 그리고 디바이스 제조방법
TWI221000B (en) * 2001-02-13 2004-09-11 Nikon Corp Manufacturing method of exposure apparatus, adjustment method of exposure apparatus, and exposure method
US20060285100A1 (en) * 2001-02-13 2006-12-21 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
US6960415B2 (en) * 2001-10-01 2005-11-01 Canon Kabushiki Kaisha Aberration measuring method and projection exposure apparatus
US6906305B2 (en) 2002-01-08 2005-06-14 Brion Technologies, Inc. System and method for aerial image sensing
DE10224363A1 (de) * 2002-05-24 2003-12-04 Zeiss Carl Smt Ag Verfahren zur Bestimmung von Wellenfrontaberrationen
US6828542B2 (en) 2002-06-07 2004-12-07 Brion Technologies, Inc. System and method for lithography process monitoring and control
JP3875158B2 (ja) * 2002-08-09 2007-01-31 株式会社東芝 露光装置判定システム、露光装置判定方法、露光装置判定プログラム及び半導体装置の製造方法
US6991895B1 (en) * 2002-08-20 2006-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. Defocus-invariant exposure for regular patterns
JP2004111579A (ja) * 2002-09-17 2004-04-08 Canon Inc 露光方法及び装置
US6807503B2 (en) 2002-11-04 2004-10-19 Brion Technologies, Inc. Method and apparatus for monitoring integrated circuit fabrication
US7022443B2 (en) * 2003-02-12 2006-04-04 Intel Corporation Compensation of reflective mask effects in lithography systems
US6759297B1 (en) 2003-02-28 2004-07-06 Union Semiconductor Technology Corporatin Low temperature deposition of dielectric materials in magnetoresistive random access memory devices
US7053355B2 (en) 2003-03-18 2006-05-30 Brion Technologies, Inc. System and method for lithography process monitoring and control
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4366121B2 (ja) * 2003-06-11 2009-11-18 キヤノン株式会社 素子の製造方法
EP1496397A1 (de) * 2003-07-11 2005-01-12 ASML Netherlands B.V. Methode und System zur vorwärts gerichteten Overlay-Korrektur musterinduzierter Bildverzerrung- und verschiebung, und lithographisches Projektionsgerät zur Benutzung derselben
US7224504B2 (en) * 2003-07-30 2007-05-29 Asml Holding N. V. Deformable mirror using piezoelectric actuators formed as an integrated circuit and method of use
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7564017B2 (en) * 2005-06-03 2009-07-21 Brion Technologies, Inc. System and method for characterizing aerial image quality in a lithography system
US7488933B2 (en) * 2005-08-05 2009-02-10 Brion Technologies, Inc. Method for lithography model calibration
US7749666B2 (en) * 2005-08-09 2010-07-06 Asml Netherlands B.V. System and method for measuring and analyzing lithographic parameters and determining optimal process corrections
US20070115452A1 (en) * 2005-11-23 2007-05-24 Asml Netherlands B.V. Method of measuring the magnification of a projection system, device manufacturing method and computer program product
US8045786B2 (en) * 2006-10-24 2011-10-25 Kla-Tencor Technologies Corp. Waferless recipe optimization
US8134683B2 (en) * 2007-02-09 2012-03-13 Asml Netherlands B.V. Device manufacturing method, computer program and lithographic apparatus
JP5013921B2 (ja) 2007-03-29 2012-08-29 キヤノン株式会社 収差計測方法、露光装置及びデバイス製造方法
US8237913B2 (en) * 2007-05-08 2012-08-07 Asml Netherlands B.V. Lithographic apparatus and method
US20080278698A1 (en) * 2007-05-08 2008-11-13 Asml Netherlands B.V. Lithographic apparatus and method
US20080304029A1 (en) * 2007-06-08 2008-12-11 Qimonda Ag Method and System for Adjusting an Optical Model
US20090002656A1 (en) * 2007-06-29 2009-01-01 Asml Netherlands B.V. Device and method for transmission image detection, lithographic apparatus and mask for use in a lithographic apparatus
US8293546B2 (en) 2008-06-17 2012-10-23 Globalfoundries Singapore Pte. Ltd. Integrated circuit system with sub-geometry removal and method of manufacture thereof
NL2008957A (en) * 2011-07-08 2013-01-09 Asml Netherlands Bv Methods and systems for pattern design with tailored response to wavefront aberration.
JP5969848B2 (ja) * 2012-07-19 2016-08-17 キヤノン株式会社 露光装置、調整対象の調整量を求める方法、プログラム及びデバイスの製造方法
JP7023790B2 (ja) * 2018-05-22 2022-02-22 株式会社Ｓｃｒｅｅｎホールディングス フォトマスク検査装置およびフォトマスク検査方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5424552A (en) 1991-07-09 1995-06-13 Nikon Corporation Projection exposing apparatus
FR2699846B1 (fr) * 1992-12-24 1995-02-10 Christophe Boiteux Elément de calage articulé.
JP3893626B2 (ja) * 1995-01-25 2007-03-14 株式会社ニコン 投影光学装置の調整方法、投影光学装置、露光装置及び露光方法
US6118535A (en) * 1999-06-02 2000-09-12 Goldberg; Kenneth Alan In Situ alignment system for phase-shifting point-diffraction interferometry
US6360012B1 (en) 1999-06-25 2002-03-19 Svg Lithography Systems, Inc. In situ projection optic metrology method and apparatus
JP3344403B2 (ja) * 2000-03-03 2002-11-11 日本電気株式会社 光学収差の測定用マスク及び光学収差の測定方法

Also Published As

Publication number Publication date
TWI254837B (en) 2006-05-11
JP4073735B2 (ja) 2008-04-09
US6787789B2 (en) 2004-09-07
KR20030017404A (ko) 2003-03-03
US20030047694A1 (en) 2003-03-13
DE60209652T2 (de) 2006-12-21
JP2003158071A (ja) 2003-05-30
KR100562190B1 (ko) 2006-03-20

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