DE60324884D1 - Verfahren zur Parameterbestimmung für lithographische Projektion - Google Patents

Verfahren zur Parameterbestimmung für lithographische Projektion

Info

Publication number
DE60324884D1
DE60324884D1 DE60324884T DE60324884T DE60324884D1 DE 60324884 D1 DE60324884 D1 DE 60324884D1 DE 60324884 T DE60324884 T DE 60324884T DE 60324884 T DE60324884 T DE 60324884T DE 60324884 D1 DE60324884 D1 DE 60324884D1
Authority
DE
Germany
Prior art keywords
lithographic projection
determining parameters
parameters
determining
lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60324884T
Other languages
English (en)
Inventor
Markus Franciscus Antonius Eurlings
Armand Eugene Albert Koolen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Application granted granted Critical
Publication of DE60324884D1 publication Critical patent/DE60324884D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE60324884T 2002-12-09 2003-12-09 Verfahren zur Parameterbestimmung für lithographische Projektion Expired - Fee Related DE60324884D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02258468 2002-12-09

Publications (1)

Publication Number Publication Date
DE60324884D1 true DE60324884D1 (de) 2009-01-08

Family

ID=32695572

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60324884T Expired - Fee Related DE60324884D1 (de) 2002-12-09 2003-12-09 Verfahren zur Parameterbestimmung für lithographische Projektion

Country Status (7)

Country Link
US (1) US7026082B2 (de)
JP (1) JP4056462B2 (de)
KR (1) KR100606491B1 (de)
CN (1) CN100487573C (de)
DE (1) DE60324884D1 (de)
SG (1) SG121840A1 (de)
TW (1) TWI257524B (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4528580B2 (ja) * 2004-08-24 2010-08-18 株式会社東芝 照明光源の設計方法、マスクパターン設計方法、フォトマスクの製造方法、半導体装置の製造方法、及びプログラム
US7246343B2 (en) * 2004-09-01 2007-07-17 Invarium, Inc. Method for correcting position-dependent distortions in patterning of integrated circuits
US7372540B2 (en) * 2004-10-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7908572B2 (en) * 2004-10-15 2011-03-15 Takumi Technology Corporation Creating and applying variable bias rules in rule-based optical proximity correction for reduced complexity
US7173688B2 (en) * 2004-12-28 2007-02-06 Asml Holding N.V. Method for calculating an intensity integral for use in lithography systems
JP2008530788A (ja) * 2005-02-12 2008-08-07 カール・ツアイス・エスエムテイ・アーゲー マイクロリソグラフィ投影露光装置
US7642019B2 (en) * 2005-04-15 2010-01-05 Samsung Electronics Co., Ltd. Methods for monitoring and adjusting focus variation in a photolithographic process using test features printed from photomask test pattern images; and machine readable program storage device having instructions therefore
KR100655428B1 (ko) 2005-10-24 2006-12-08 삼성전자주식회사 광근접효과보정 시스템 및 방법
US8576377B2 (en) * 2006-12-28 2013-11-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080158529A1 (en) * 2006-12-28 2008-07-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080180696A1 (en) * 2007-01-30 2008-07-31 Sony Corporation Process window for EUV lithography
US8191018B1 (en) * 2007-07-17 2012-05-29 Kovio, Inc. Methods and software for printing materials onto a substrate
TWI424516B (zh) * 2007-10-10 2014-01-21 Asml Netherlands Bv 放置基板之方法、傳送基板之方法、支撐系統及微影投影裝置
US8151223B2 (en) * 2008-07-14 2012-04-03 Mentor Graphics Corporation Source mask optimization for microcircuit design
JP5607308B2 (ja) * 2009-01-09 2014-10-15 キヤノン株式会社 原版データ生成プログラムおよび方法
CN101788760B (zh) * 2009-01-23 2012-07-11 中芯国际集成电路制造(上海)有限公司 光学邻近校正规则的优化方法
US8479125B2 (en) * 2009-03-31 2013-07-02 Christophe Pierrat Lithography modeling and applications
US8446565B2 (en) * 2010-01-11 2013-05-21 Macronix International Co., Ltd. Methods of optical proximity correction in manufacturing semiconductor devices
CN102385242A (zh) * 2010-09-01 2012-03-21 无锡华润上华半导体有限公司 掩膜版制作方法及系统
JP6663163B2 (ja) * 2011-09-13 2020-03-11 コミシリア ア レネルジ アトミック エ オ エナジーズ オルタネティヴズ 確率的方法により露出するパターンの逆畳み込みを用いて電子近接効果を補正する方法
US8612904B1 (en) * 2012-11-21 2013-12-17 Global Foundries Inc. Use of polarization and composite illumination source for advanced optical lithography
WO2016045901A1 (en) 2014-09-22 2016-03-31 Asml Netherlands B.V. Process window identifier
JP6447163B2 (ja) * 2015-01-21 2019-01-09 株式会社ニューフレアテクノロジー エネルギービーム描画装置の描画データ作成方法
US10459345B2 (en) 2015-03-06 2019-10-29 Asml Netherlands B.V. Focus-dose co-optimization based on overlapping process window
CN107179625B (zh) * 2017-06-29 2020-06-23 惠科股份有限公司 一种显示面板的间隔单元、光罩及显示面板的制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465220A (en) 1992-06-02 1995-11-07 Fujitsu Limited Optical exposure method
US6320648B1 (en) 1998-10-12 2001-11-20 Steven R. J. Brueck Method and apparatus for improving pattern fidelity in diffraction-limited imaging
TWI285295B (en) 2001-02-23 2007-08-11 Asml Netherlands Bv Illumination optimization in lithography
US6519760B2 (en) 2001-02-28 2003-02-11 Asml Masktools, B.V. Method and apparatus for minimizing optical proximity effects

Also Published As

Publication number Publication date
TW200424793A (en) 2004-11-16
CN100487573C (zh) 2009-05-13
SG121840A1 (en) 2006-05-26
CN1506767A (zh) 2004-06-23
US7026082B2 (en) 2006-04-11
JP2004191981A (ja) 2004-07-08
US20040137343A1 (en) 2004-07-15
KR100606491B1 (ko) 2006-07-31
JP4056462B2 (ja) 2008-03-05
TWI257524B (en) 2006-07-01
KR20040050859A (ko) 2004-06-17

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee