DE60207124D1 - Zusammensetzung für eine reflexvermindernde Unterschicht für die Lithographie - Google Patents

Zusammensetzung für eine reflexvermindernde Unterschicht für die Lithographie

Info

Publication number
DE60207124D1
DE60207124D1 DE60207124T DE60207124T DE60207124D1 DE 60207124 D1 DE60207124 D1 DE 60207124D1 DE 60207124 T DE60207124 T DE 60207124T DE 60207124 T DE60207124 T DE 60207124T DE 60207124 D1 DE60207124 D1 DE 60207124D1
Authority
DE
Germany
Prior art keywords
lithography
composition
antireflective
undercoat
antireflective undercoat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60207124T
Other languages
English (en)
Other versions
DE60207124T2 (de
Inventor
Shinya Arase
Takahiro Kishioka
Ken-Ichi Mizusawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Publication of DE60207124D1 publication Critical patent/DE60207124D1/de
Application granted granted Critical
Publication of DE60207124T2 publication Critical patent/DE60207124T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
DE60207124T 2001-02-22 2002-02-22 Zusammensetzung für eine reflexvermindernde Unterschicht für die Lithographie Expired - Lifetime DE60207124T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001046779 2001-02-22
JP2001046779 2001-02-22

Publications (2)

Publication Number Publication Date
DE60207124D1 true DE60207124D1 (de) 2005-12-15
DE60207124T2 DE60207124T2 (de) 2006-07-20

Family

ID=18908337

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60207124T Expired - Lifetime DE60207124T2 (de) 2001-02-22 2002-02-22 Zusammensetzung für eine reflexvermindernde Unterschicht für die Lithographie

Country Status (5)

Country Link
US (1) US6927266B2 (de)
EP (1) EP1237042B1 (de)
KR (1) KR100838000B1 (de)
DE (1) DE60207124T2 (de)
TW (1) TW563001B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7365408B2 (en) * 2002-04-30 2008-04-29 International Business Machines Corporation Structure for photolithographic applications using a multi-layer anti-reflection coating
KR100480235B1 (ko) 2002-07-18 2005-04-06 주식회사 하이닉스반도체 유기 반사방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법
US7323289B2 (en) * 2002-10-08 2008-01-29 Brewer Science Inc. Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties
EP1649322A4 (de) 2003-07-17 2007-09-19 Honeywell Int Inc Planarisierungsfilme für fortschrittliche mikroelektronsiche anwendungen und einrichtungen und herstellungsverfahren dafür
KR100570207B1 (ko) * 2003-10-15 2006-04-12 주식회사 하이닉스반도체 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물
US7030201B2 (en) 2003-11-26 2006-04-18 Az Electronic Materials Usa Corp. Bottom antireflective coatings
JP4697466B2 (ja) * 2004-11-01 2011-06-08 日産化学工業株式会社 スルホン酸エステルを含有するリソグラフィー用反射防止膜形成組成物
US20060154186A1 (en) * 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
JP5112733B2 (ja) * 2006-04-11 2013-01-09 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトリソグラフィ用コーティング組成物
EP1906249A3 (de) * 2006-09-26 2008-12-24 Rohm and Haas Electronic Materials, L.L.C. Antireflexbeschichtungszusammensetzungen für Photolithographie
US20090035704A1 (en) * 2007-08-03 2009-02-05 Hong Zhuang Underlayer Coating Composition Based on a Crosslinkable Polymer
KR100871772B1 (ko) * 2007-09-17 2008-12-05 주식회사 효성 이소시아네이트계 유도체를 포함하는 공중합체, 상기공중합체의 제조방법, 상기 공중합체를 포함하는유기반사방지막 조성물 및 상기 조성물을 포함하는유기반사방지막
US8039201B2 (en) * 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US20090253080A1 (en) * 2008-04-02 2009-10-08 Dammel Ralph R Photoresist Image-Forming Process Using Double Patterning
US20090253081A1 (en) * 2008-04-02 2009-10-08 David Abdallah Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step
US20100040838A1 (en) * 2008-08-15 2010-02-18 Abdallah David J Hardmask Process for Forming a Reverse Tone Image
US8084186B2 (en) * 2009-02-10 2011-12-27 Az Electronic Materials Usa Corp. Hardmask process for forming a reverse tone image using polysilazane
JP5552365B2 (ja) * 2009-06-30 2014-07-16 東京応化工業株式会社 接着剤組成物および接着フィルム
JP5574124B2 (ja) * 2009-09-14 2014-08-20 日産化学工業株式会社 共重合体を含有する感光性樹脂組成物
US8697336B2 (en) 2011-12-15 2014-04-15 Az Electronic Materials Usa Corp. Composition for forming a developable bottom antireflective coating
CN116102939B (zh) * 2021-11-09 2023-10-03 上海新阳半导体材料股份有限公司 一种深紫外光刻用底部抗反射涂层及其制备方法和应用

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4039334A1 (de) 1989-12-28 1991-07-04 Hoechst Celanese Corp Lichtempfindlicher gegenstand und verfahren zur erzeugung eines bildes
US5294680A (en) 1992-07-24 1994-03-15 International Business Machines Corporation Polymeric dyes for antireflective coatings
TW406215B (en) 1996-08-07 2000-09-21 Fuji Photo Film Co Ltd Composition for anti-reflective coating material in lithographic process, and process for forming resist pattern
TW473653B (en) * 1997-05-27 2002-01-21 Clariant Japan Kk Composition for anti-reflective film or photo absorption film and compound used therein
JP4053631B2 (ja) 1997-10-08 2008-02-27 Ａｚエレクトロニックマテリアルズ株式会社 反射防止膜又は光吸収膜用組成物及びこれに用いる重合体
JP4165922B2 (ja) 1998-03-17 2008-10-15 Ａｚエレクトロニックマテリアルズ株式会社 光吸収性ポリマーおよびその反射防止膜への応用
WO2002025374A2 (en) 2000-09-19 2002-03-28 Shipley Company, L.L.C. Antireflective composition
US6503421B1 (en) * 2000-11-01 2003-01-07 Corning Incorporated All polymer process compatible optical polymer material

Also Published As

Publication number Publication date
DE60207124T2 (de) 2006-07-20
KR20020070804A (ko) 2002-09-11
TW563001B (en) 2003-11-21
US20020156148A1 (en) 2002-10-24
EP1237042A2 (de) 2002-09-04
KR100838000B1 (ko) 2008-06-13
EP1237042B1 (de) 2005-11-09
EP1237042A3 (de) 2003-09-03
US6927266B2 (en) 2005-08-09

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