DE60218790D1 - Halbleiterlaser mit kontrollierter Sauerstoffgrenzfläche an beiden Facetten - Google Patents

Halbleiterlaser mit kontrollierter Sauerstoffgrenzfläche an beiden Facetten

Info

Publication number
DE60218790D1
DE60218790D1 DE60218790T DE60218790T DE60218790D1 DE 60218790 D1 DE60218790 D1 DE 60218790D1 DE 60218790 T DE60218790 T DE 60218790T DE 60218790 T DE60218790 T DE 60218790T DE 60218790 D1 DE60218790 D1 DE 60218790D1
Authority
DE
Germany
Prior art keywords
facets
semiconductor laser
controlled oxygen
oxygen interface
interface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60218790T
Other languages
English (en)
Other versions
DE60218790T2 (de
Inventor
Yamanaka Fusao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of DE60218790D1 publication Critical patent/DE60218790D1/de
Application granted granted Critical
Publication of DE60218790T2 publication Critical patent/DE60218790T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE60218790T 2001-09-03 2002-09-02 Halbleiterlaser mit kontrollierter Sauerstoffgrenzfläche an beiden Facetten Expired - Lifetime DE60218790T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001265356 2001-09-03
JP2001265356A JP2003078199A (ja) 2001-09-03 2001-09-03 半導体レーザ装置

Publications (2)

Publication Number Publication Date
DE60218790D1 true DE60218790D1 (de) 2007-04-26
DE60218790T2 DE60218790T2 (de) 2007-12-06

Family

ID=19091832

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60218790T Expired - Lifetime DE60218790T2 (de) 2001-09-03 2002-09-02 Halbleiterlaser mit kontrollierter Sauerstoffgrenzfläche an beiden Facetten

Country Status (4)

Country Link
US (1) US6798805B2 (de)
EP (1) EP1289080B1 (de)
JP (1) JP2003078199A (de)
DE (1) DE60218790T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101039967B1 (ko) 2003-10-31 2011-06-09 엘지이노텍 주식회사 반도체 레이저 다이오드 및 그 제조방법
JP2006059881A (ja) * 2004-08-17 2006-03-02 Sharp Corp 半導体レーザ素子及びその製造方法
JP2006286870A (ja) * 2005-03-31 2006-10-19 Fuji Photo Film Co Ltd 半導体レーザおよびそれを用いた光通信システム
JP5285835B2 (ja) * 2005-07-13 2013-09-11 株式会社東芝 半導体素子およびその製造方法
CN100449888C (zh) * 2005-07-29 2009-01-07 日亚化学工业株式会社 半导体激光元件
JP2007109737A (ja) * 2005-10-11 2007-04-26 Toshiba Corp 窒化物半導体レーザ装置及びその製造方法
KR100853241B1 (ko) * 2005-12-16 2008-08-20 샤프 가부시키가이샤 질화물 반도체 발광소자 및 질화물 반도체 레이저 소자의제조방법
JP5191650B2 (ja) * 2005-12-16 2013-05-08 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5004597B2 (ja) * 2006-03-06 2012-08-22 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5430826B2 (ja) * 2006-03-08 2014-03-05 シャープ株式会社 窒化物半導体レーザ素子
JP4444304B2 (ja) * 2006-04-24 2010-03-31 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
TWI425639B (zh) * 2007-10-22 2014-02-01 Au Optronics Corp 一種薄膜電晶體及其製造方法
JP2009170801A (ja) 2008-01-18 2009-07-30 Mitsubishi Electric Corp 半導体レーザ
JP2009176812A (ja) * 2008-01-22 2009-08-06 Mitsubishi Electric Corp 半導体レーザ
DE102009054912A1 (de) 2009-08-28 2011-03-10 M2K-Laser Gmbh Hochleistungs-Diodenlaser und Verfahren zum Herstellen eines Hochleistungs-Diodenlasers
US10186833B2 (en) * 2015-02-18 2019-01-22 Ii-Vi Incorporated Densely-spaced laser diode configurations

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125832A (ja) 1982-01-22 1983-07-27 Hitachi Ltd ３−５族化合物半導体のパツシベ−シヨン法
US4563368A (en) * 1983-02-14 1986-01-07 Xerox Corporation Passivation for surfaces and interfaces of semiconductor laser facets or the like
US4656638A (en) * 1983-02-14 1987-04-07 Xerox Corporation Passivation for surfaces and interfaces of semiconductor laser facets or the like
JPH0642582B2 (ja) * 1988-06-27 1994-06-01 シャープ株式会社 誘電体多層被覆膜
US5144634A (en) 1989-09-07 1992-09-01 International Business Machines Corporation Method for mirror passivation of semiconductor laser diodes
JPH03293791A (ja) * 1990-04-12 1991-12-25 Canon Inc 半導体光素子、半導体光増幅器及びそれらの製造方法
JPH10509283A (ja) * 1995-09-14 1998-09-08 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 半導体ダイオードレーザ及びその製造方法
JPH09162496A (ja) * 1995-12-12 1997-06-20 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ及びその製造方法
JPH10112566A (ja) * 1996-10-07 1998-04-28 Furukawa Electric Co Ltd:The 半導体レーザ
JP3710627B2 (ja) 1997-08-13 2005-10-26 三菱化学株式会社 化合物半導体発光素子
EP0898345A3 (de) 1997-08-13 2004-01-02 Mitsubishi Chemical Corporation Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
JP3699851B2 (ja) * 1998-05-11 2005-09-28 三菱化学株式会社 半導体発光素子の製造方法
US6438150B1 (en) * 1999-03-09 2002-08-20 Telecordia Technologies, Inc. Edge-emitting semiconductor laser having asymmetric interference filters
JP2000332340A (ja) * 1999-05-21 2000-11-30 Fuji Photo Film Co Ltd 半導体レーザ装置およびその製造方法
JP2001068780A (ja) * 1999-08-30 2001-03-16 Fuji Photo Film Co Ltd 半導体レーザ素子およびその製造方法
JP2001230483A (ja) * 2000-02-14 2001-08-24 Fuji Photo Film Co Ltd 半導体レーザ装置
US6618409B1 (en) * 2000-05-03 2003-09-09 Corning Incorporated Passivation of semiconductor laser facets

Also Published As

Publication number Publication date
US20030048823A1 (en) 2003-03-13
EP1289080A2 (de) 2003-03-05
EP1289080A3 (de) 2005-06-22
US6798805B2 (en) 2004-09-28
DE60218790T2 (de) 2007-12-06
EP1289080B1 (de) 2007-03-14
JP2003078199A (ja) 2003-03-14

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