DE60207657D1 - Halbleitersubstrat aus Silizium und Verfahren zu ihrer Herstellung - Google Patents

Halbleitersubstrat aus Silizium und Verfahren zu ihrer Herstellung

Info

Publication number
DE60207657D1
DE60207657D1 DE60207657T DE60207657T DE60207657D1 DE 60207657 D1 DE60207657 D1 DE 60207657D1 DE 60207657 T DE60207657 T DE 60207657T DE 60207657 T DE60207657 T DE 60207657T DE 60207657 D1 DE60207657 D1 DE 60207657D1
Authority
DE
Germany
Prior art keywords
silicon
preparation
semiconductor substrate
substrate made
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60207657T
Other languages
English (en)
Other versions
DE60207657T2 (de
Inventor
Akiyoshi Tachikawa
Kazunori Ishisaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic AG filed Critical Siltronic AG
Publication of DE60207657D1 publication Critical patent/DE60207657D1/de
Application granted granted Critical
Publication of DE60207657T2 publication Critical patent/DE60207657T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60207657T 2001-09-14 2002-09-05 Halbleitersubstrat aus Silizium und Verfahren zu ihrer Herstellung Expired - Lifetime DE60207657T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001280460 2001-09-14
JP2001280460A JP4549589B2 (ja) 2001-09-14 2001-09-14 シリコン半導体基板およびその製造方法

Publications (2)

Publication Number Publication Date
DE60207657D1 true DE60207657D1 (de) 2006-01-05
DE60207657T2 DE60207657T2 (de) 2006-06-08

Family

ID=19104455

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60207657T Expired - Lifetime DE60207657T2 (de) 2001-09-14 2002-09-05 Halbleitersubstrat aus Silizium und Verfahren zu ihrer Herstellung

Country Status (7)

Country Link
US (1) US6767848B2 (de)
EP (1) EP1293591B1 (de)
JP (1) JP4549589B2 (de)
KR (1) KR100526427B1 (de)
CN (1) CN1194382C (de)
DE (1) DE60207657T2 (de)
TW (1) TWI231548B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4567251B2 (ja) * 2001-09-14 2010-10-20 シルトロニック・ジャパン株式会社 シリコン半導体基板およびその製造方法
KR100573473B1 (ko) * 2004-05-10 2006-04-24 주식회사 실트론 실리콘 웨이퍼 및 그 제조방법
DE102005046726B4 (de) * 2005-09-29 2012-02-02 Siltronic Ag Nichtpolierte monokristalline Siliziumscheibe und Verfahren zu ihrer Herstellung
US20110042791A1 (en) * 2006-01-20 2011-02-24 Infineon Technologies Austria Ag Method for treating an oxygen-containing semiconductor wafer, and semiconductor component
KR100851137B1 (ko) * 2006-10-10 2008-08-08 현대자동차주식회사 휠 너트의 종류 식별 및 안착용 지그장치
US7977216B2 (en) * 2008-09-29 2011-07-12 Magnachip Semiconductor, Ltd. Silicon wafer and fabrication method thereof
EP2309038B1 (de) * 2009-10-08 2013-01-02 Siltronic AG Herstellungsverfahren eines Epitaxial-Wafers
CN103855098B (zh) * 2012-12-04 2017-05-17 中芯国际集成电路制造(上海)有限公司 闪存的存储单元的形成方法
US9255343B2 (en) 2013-03-08 2016-02-09 Ut-Battelle, Llc Iron-based composition for magnetocaloric effect (MCE) applications and method of making a single crystal
CN105297140B (zh) * 2015-09-10 2019-10-25 上海超硅半导体有限公司 硅片及退火处理方法
JP6761917B1 (ja) * 2019-11-29 2020-09-30 Ｊｘ金属株式会社 リン化インジウム基板、半導体エピタキシャルウエハ、及びリン化インジウム基板の製造方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3080501B2 (ja) * 1993-03-01 2000-08-28 東芝セラミックス株式会社 シリコンウェーハの製造方法
DE19637182A1 (de) * 1996-09-12 1998-03-19 Wacker Siltronic Halbleitermat Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte
US5930762A (en) * 1996-09-24 1999-07-27 Rco Software Limited Computer aided risk management in multiple-parameter physical systems
JPH1179889A (ja) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
JP3144631B2 (ja) * 1997-08-08 2001-03-12 住友金属工業株式会社 シリコン半導体基板の熱処理方法
WO1999010570A1 (fr) * 1997-08-26 1999-03-04 Sumitomo Metal Industries, Ltd. Cristal unique de silicium de grande qualite et procede de fabrication
TW429478B (en) * 1997-08-29 2001-04-11 Toshiba Corp Semiconductor device and method for manufacturing the same
JPH11135511A (ja) * 1997-10-29 1999-05-21 Nippon Steel Corp シリコン半導体基板及びその製造方法
JP3596257B2 (ja) * 1997-11-19 2004-12-02 三菱住友シリコン株式会社 シリコン単結晶ウェーハの製造方法
US6021397A (en) * 1997-12-02 2000-02-01 Financial Engines, Inc. Financial advisory system
TW589415B (en) * 1998-03-09 2004-06-01 Shinetsu Handotai Kk Method for producing silicon single crystal wafer and silicon single crystal wafer
US6078904A (en) * 1998-03-16 2000-06-20 Saddle Peak Systems Risk direct asset allocation and risk resolved CAPM for optimally allocating investment assets in an investment portfolio
KR100541882B1 (ko) * 1998-05-01 2006-01-16 왁커 엔에스씨이 코포레이션 실리콘 반도체 기판 및 그의 제조 방법
JP4084902B2 (ja) * 1998-05-01 2008-04-30 シルトロニック・ジャパン株式会社 シリコン半導体基板及びその製造方法
JPH11349393A (ja) * 1998-06-03 1999-12-21 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法
US6413310B1 (en) * 1998-08-31 2002-07-02 Shin-Etsu Handotai Co., Ltd. Method for producing silicon single crystal wafer and silicon single crystal wafer
US6292787B1 (en) * 1998-09-11 2001-09-18 Financial Engines, Inc. Enhancing utility and diversifying model risk in a portfolio optimization framework
JP3975605B2 (ja) * 1998-11-17 2007-09-12 信越半導体株式会社 シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法
US6219649B1 (en) * 1999-01-21 2001-04-17 Joel Jameson Methods and apparatus for allocating resources in the presence of uncertainty
JP2000256092A (ja) 1999-03-04 2000-09-19 Shin Etsu Handotai Co Ltd シリコンウエーハ
KR100720659B1 (ko) * 1999-08-27 2007-05-21 사무코 테크시부 가부시키가이샤 실리콘 웨이퍼 및 그 제조 방법, 실리콘 웨이퍼의 평가 방법
KR100378184B1 (ko) * 1999-11-13 2003-03-29 삼성전자주식회사 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러
JP3601383B2 (ja) * 1999-11-25 2004-12-15 信越半導体株式会社 エピタキシャル成長用シリコンウエーハ及びエピタキシャルウエーハ並びにその製造方法
JP2001220291A (ja) * 2000-02-01 2001-08-14 Komatsu Electronic Metals Co Ltd シリコンウエハの製造方法
WO2001093164A1 (en) * 2000-05-30 2001-12-06 Ittai Korin Method and system for analyzing performance of an investment portfolio together with associated risk
US20020062271A1 (en) * 2000-10-13 2002-05-23 Peter Breuninger Method and system for managing portfolio accounts
US7536332B2 (en) * 2001-02-02 2009-05-19 Rhee Thomas A Real life implementation of modern portfolio theory (MPT) for financial planning and portfolio management
US20020198809A1 (en) * 2001-05-23 2002-12-26 Daley R. Michael System and method for managing investment accounts for a financial institution which provides investment assistance to individual client investors
US20020198811A1 (en) * 2001-06-12 2002-12-26 Adam Wizon System and method for monitoring the status of analyses performed on a portfolio of financial instruments

Also Published As

Publication number Publication date
US6767848B2 (en) 2004-07-27
JP2003086597A (ja) 2003-03-20
CN1194382C (zh) 2005-03-23
EP1293591B1 (de) 2005-11-30
KR20030023509A (ko) 2003-03-19
DE60207657T2 (de) 2006-06-08
KR100526427B1 (ko) 2005-11-08
US20030134520A1 (en) 2003-07-17
EP1293591A2 (de) 2003-03-19
JP4549589B2 (ja) 2010-09-22
CN1405841A (zh) 2003-03-26
TWI231548B (en) 2005-04-21
EP1293591A3 (de) 2003-06-04

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