DE602006005153D1 - Selektive, langsam programmierbare konvergenz in einer flash-speichervorrichtung - Google Patents

Selektive, langsam programmierbare konvergenz in einer flash-speichervorrichtung

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Publication number
DE602006005153D1
DE602006005153D1 DE602006005153T DE602006005153T DE602006005153D1 DE 602006005153 D1 DE602006005153 D1 DE 602006005153D1 DE 602006005153 T DE602006005153 T DE 602006005153T DE 602006005153 T DE602006005153 T DE 602006005153T DE 602006005153 D1 DE602006005153 D1 DE 602006005153D1
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DE
Germany
Prior art keywords
voltage
threshold
sub
cell
verify
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006005153T
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English (en)
Inventor
Michele Incarnati
Giovanni Santin
Tommaso Vali
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority claimed from PCT/US2006/023217 external-priority patent/WO2006138413A1/en
Publication of DE602006005153D1 publication Critical patent/DE602006005153D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
DE602006005153T 2005-06-15 2006-06-13 Selektive, langsam programmierbare konvergenz in einer flash-speichervorrichtung Active DE602006005153D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IT000310A ITRM20050310A1 (it) 2005-06-15 2005-06-15 Convergenza a programmazione selettiva lenta in un dispositivo di memoria flash.
US11/414,982 US7324383B2 (en) 2005-06-15 2006-05-01 Selective slow programming convergence in a flash memory device
PCT/US2006/023217 WO2006138413A1 (en) 2005-06-15 2006-06-13 Selective slow programming convergence in a flash memory device

Publications (1)

Publication Number Publication Date
DE602006005153D1 true DE602006005153D1 (de) 2009-03-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006005153T Active DE602006005153D1 (de) 2005-06-15 2006-06-13 Selektive, langsam programmierbare konvergenz in einer flash-speichervorrichtung

Country Status (7)

Country Link
US (1) US7324383B2 (de)
JP (1) JP2009509276A (de)
CN (1) CN101199025B (de)
AT (1) ATE422701T1 (de)
DE (1) DE602006005153D1 (de)
IT (1) ITRM20050310A1 (de)
TW (1) TWI320181B (de)

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Also Published As

Publication number Publication date
US7324383B2 (en) 2008-01-29
US20060285392A1 (en) 2006-12-21
TWI320181B (en) 2010-02-01
ITRM20050310A1 (it) 2006-12-16
ATE422701T1 (de) 2009-02-15
TW200709209A (en) 2007-03-01
JP2009509276A (ja) 2009-03-05
CN101199025A (zh) 2008-06-11
CN101199025B (zh) 2012-02-29

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