WO2007076512A3 - Methods and device for improved program-verify operations in non-volatile memories - Google Patents

Methods and device for improved program-verify operations in non-volatile memories Download PDF

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Publication number
WO2007076512A3
WO2007076512A3 PCT/US2006/062627 US2006062627W WO2007076512A3 WO 2007076512 A3 WO2007076512 A3 WO 2007076512A3 US 2006062627 W US2006062627 W US 2006062627W WO 2007076512 A3 WO2007076512 A3 WO 2007076512A3
Authority
WO
WIPO (PCT)
Prior art keywords
verify
threshold level
sub
relative
programming
Prior art date
Application number
PCT/US2006/062627
Other languages
French (fr)
Other versions
WO2007076512A2 (en
Inventor
Siu Lung Chan
Original Assignee
Sandisk Corp
Siu Lung Chan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/323,596 external-priority patent/US7224614B1/en
Priority claimed from US11/323,577 external-priority patent/US7310255B2/en
Application filed by Sandisk Corp, Siu Lung Chan filed Critical Sandisk Corp
Priority to KR1020087015676A priority Critical patent/KR101317625B1/en
Priority to EP06848897A priority patent/EP1966802A2/en
Priority to JP2008548835A priority patent/JP4638544B2/en
Publication of WO2007076512A2 publication Critical patent/WO2007076512A2/en
Publication of WO2007076512A3 publication Critical patent/WO2007076512A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

Abstract

In programming a non-volatile memory involving alternately applying a programming pulse and verifying the programming, time is saved in the program verify portion when, depending on the states of the memory cells, a portion of the verify operation is recognized to be superfluous and skipped. Preferably, in a program verify operation relative to a demarcation threshold level for demarcating between two memory states, the verify operation includes a sequence of two verify sub-cycles, the first sub-cycle performing a verify relative to a first threshold level at a predetermined margin below the demarcation threshold level and the second sub-cycle performing a verify relative to a second threshold level which is identical to the demarcation threshold level. Unlike conventional cases, the second sub-cycle is not performed until any one memory cell of the group has been verified to pass the first threshold.
PCT/US2006/062627 2005-12-29 2006-12-27 Methods and device for improved program-verify operations in non-volatile memories WO2007076512A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020087015676A KR101317625B1 (en) 2005-12-29 2006-12-27 Methods and device for improved program-verify operations in non-volatile memories
EP06848897A EP1966802A2 (en) 2005-12-29 2006-12-27 Methods and device for improved program-verify operations in non-volatile memories
JP2008548835A JP4638544B2 (en) 2005-12-29 2006-12-27 Method and apparatus for improved program verify operation in non-volatile memory

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/323,596 US7224614B1 (en) 2005-12-29 2005-12-29 Methods for improved program-verify operations in non-volatile memories
US11/323,596 2005-12-29
US11/323,577 US7310255B2 (en) 2005-12-29 2005-12-29 Non-volatile memory with improved program-verify operations
US11/323,577 2005-12-29

Publications (2)

Publication Number Publication Date
WO2007076512A2 WO2007076512A2 (en) 2007-07-05
WO2007076512A3 true WO2007076512A3 (en) 2007-08-16

Family

ID=38110643

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/062627 WO2007076512A2 (en) 2005-12-29 2006-12-27 Methods and device for improved program-verify operations in non-volatile memories

Country Status (5)

Country Link
EP (1) EP1966802A2 (en)
JP (1) JP4638544B2 (en)
KR (1) KR101317625B1 (en)
TW (1) TWI328231B (en)
WO (1) WO2007076512A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101559088B1 (en) 2008-04-08 2015-10-08 샌디스크 테크놀로지스, 인코포레이티드 Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise

Families Citing this family (16)

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ITRM20080114A1 (en) * 2008-02-29 2009-09-01 Micron Technology Inc COMPENSATION OF CHARGE LOSS DURING THE PROGRAMMING OF A MEMORY DEVICE.
JP5172555B2 (en) 2008-09-08 2013-03-27 株式会社東芝 Semiconductor memory device
JP5193830B2 (en) 2008-12-03 2013-05-08 株式会社東芝 Nonvolatile semiconductor memory
KR101005117B1 (en) * 2009-01-23 2011-01-04 주식회사 하이닉스반도체 Operating method of non volatile memory device
JP5039079B2 (en) * 2009-03-23 2012-10-03 株式会社東芝 Nonvolatile semiconductor memory device
KR101554727B1 (en) 2009-07-13 2015-09-23 삼성전자주식회사 Nonvolitile memory device and program method thereof
US8223556B2 (en) * 2009-11-25 2012-07-17 Sandisk Technologies Inc. Programming non-volatile memory with a reduced number of verify operations
KR101633018B1 (en) 2009-12-28 2016-06-24 삼성전자주식회사 Flash memory device and program method thereof
JP2011258289A (en) * 2010-06-10 2011-12-22 Toshiba Corp Method for detecting threshold value of memory cell
KR101656384B1 (en) * 2010-06-10 2016-09-12 삼성전자주식회사 Method of writing data in a non-volatile memory device
JP5380506B2 (en) * 2011-09-22 2014-01-08 株式会社東芝 Nonvolatile semiconductor memory device
JP2014053060A (en) 2012-09-07 2014-03-20 Toshiba Corp Semiconductor storage device and control method of the same
JP2014063551A (en) 2012-09-21 2014-04-10 Toshiba Corp Semiconductor memory device
TWI514394B (en) * 2013-08-27 2015-12-21 Toshiba Kk Semiconductor memory device and its control method
JP7132443B2 (en) * 2019-10-12 2022-09-06 長江存儲科技有限責任公司 METHOD OF PROGRAMMING MEMORY DEVICES, SYSTEMS AND RELATED MEMORY DEVICES
US11594293B2 (en) 2020-07-10 2023-02-28 Samsung Electronics Co., Ltd. Memory device with conditional skip of verify operation during write and operating method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050162923A1 (en) * 2004-01-27 2005-07-28 Guterman Daniel C. Charge packet metering for coarse/fine programming of non-volatile memory
US20050162916A1 (en) * 2004-01-27 2005-07-28 Guterman Daniel C. Efficient verification for coarse/fine programming of non-volatile memory
US20050248988A1 (en) * 2004-05-05 2005-11-10 Guterman Daniel C Boosting to control programming of non-volatile memory

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3679544B2 (en) * 1997-03-28 2005-08-03 三洋電機株式会社 Nonvolatile semiconductor memory device
JP3977799B2 (en) * 2003-12-09 2007-09-19 株式会社東芝 Nonvolatile semiconductor memory device
US7136304B2 (en) * 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US7170793B2 (en) * 2004-04-13 2007-01-30 Sandisk Corporation Programming inhibit for non-volatile memory
ITRM20050310A1 (en) * 2005-06-15 2006-12-16 Micron Technology Inc SLOW CONVERGENCE IN SELECTIVE PROGRAMMING IN A FLASH MEMORY DEVICE.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050162923A1 (en) * 2004-01-27 2005-07-28 Guterman Daniel C. Charge packet metering for coarse/fine programming of non-volatile memory
US20050162916A1 (en) * 2004-01-27 2005-07-28 Guterman Daniel C. Efficient verification for coarse/fine programming of non-volatile memory
US20050248988A1 (en) * 2004-05-05 2005-11-10 Guterman Daniel C Boosting to control programming of non-volatile memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101559088B1 (en) 2008-04-08 2015-10-08 샌디스크 테크놀로지스, 인코포레이티드 Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise

Also Published As

Publication number Publication date
KR101317625B1 (en) 2013-10-10
WO2007076512A2 (en) 2007-07-05
TWI328231B (en) 2010-08-01
JP2009522707A (en) 2009-06-11
JP4638544B2 (en) 2011-02-23
EP1966802A2 (en) 2008-09-10
KR20080096645A (en) 2008-10-31
TW200746151A (en) 2007-12-16

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