WO2007076512A3 - Methods and device for improved program-verify operations in non-volatile memories - Google Patents

Methods and device for improved program-verify operations in non-volatile memories

Info

Publication number
WO2007076512A3
WO2007076512A3 PCT/US2006/062627 US2006062627W WO2007076512A3 WO 2007076512 A3 WO2007076512 A3 WO 2007076512A3 US 2006062627 W US2006062627 W US 2006062627W WO 2007076512 A3 WO2007076512 A3 WO 2007076512A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
verify
threshold level
sub
non
relative
Prior art date
Application number
PCT/US2006/062627
Other languages
French (fr)
Other versions
WO2007076512A2 (en )
Inventor
Siu Lung Chan
Original Assignee
Siu Lung Chan
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436Arrangements for verifying correct programming or erasure
    • G11C16/3454Arrangements for verifying correct programming or for detecting overprogrammed cells
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436Arrangements for verifying correct programming or erasure
    • G11C16/3454Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459Circuits or methods to verify correct programming of nonvolatile memory cells

Abstract

In programming a non-volatile memory involving alternately applying a programming pulse and verifying the programming, time is saved in the program verify portion when, depending on the states of the memory cells, a portion of the verify operation is recognized to be superfluous and skipped. Preferably, in a program verify operation relative to a demarcation threshold level for demarcating between two memory states, the verify operation includes a sequence of two verify sub-cycles, the first sub-cycle performing a verify relative to a first threshold level at a predetermined margin below the demarcation threshold level and the second sub-cycle performing a verify relative to a second threshold level which is identical to the demarcation threshold level. Unlike conventional cases, the second sub-cycle is not performed until any one memory cell of the group has been verified to pass the first threshold.
PCT/US2006/062627 2005-12-29 2006-12-27 Methods and device for improved program-verify operations in non-volatile memories WO2007076512A3 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US11/323,577 2005-12-29
US11/323,596 2005-12-29
US11323596 US7224614B1 (en) 2005-12-29 2005-12-29 Methods for improved program-verify operations in non-volatile memories
US11323577 US7310255B2 (en) 2005-12-29 2005-12-29 Non-volatile memory with improved program-verify operations

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20087015676A KR101317625B1 (en) 2005-12-29 2006-12-27 Methods and device for improved program-verify operations in non-volatile memories
JP2008548835A JP4638544B2 (en) 2005-12-29 2006-12-27 Method and apparatus for program verify operations that are improved in the non-volatile memory
EP20060848897 EP1966802A2 (en) 2005-12-29 2006-12-27 Methods and device for improved program-verify operations in non-volatile memories

Publications (2)

Publication Number Publication Date
WO2007076512A2 true WO2007076512A2 (en) 2007-07-05
WO2007076512A3 true true WO2007076512A3 (en) 2007-08-16

Family

ID=38110643

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/062627 WO2007076512A3 (en) 2005-12-29 2006-12-27 Methods and device for improved program-verify operations in non-volatile memories

Country Status (4)

Country Link
EP (1) EP1966802A2 (en)
JP (1) JP4638544B2 (en)
KR (1) KR101317625B1 (en)
WO (1) WO2007076512A3 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101559088B1 (en) 2008-04-08 2015-10-08 샌디스크 테크놀로지스, 인코포레이티드 Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7751246B2 (en) * 2008-02-29 2010-07-06 Micron Technology, Inc. Charge loss compensation during programming of a memory device
JP5172555B2 (en) 2008-09-08 2013-03-27 株式会社東芝 A semiconductor memory device
JP5193830B2 (en) 2008-12-03 2013-05-08 株式会社東芝 Non-volatile semiconductor memory
KR101005117B1 (en) * 2009-01-23 2011-01-04 주식회사 하이닉스반도체 Operating method of non volatile memory device
KR101554727B1 (en) 2009-07-13 2015-09-23 삼성전자주식회사 Non-volatile memory device and method of its application
US8223556B2 (en) 2009-11-25 2012-07-17 Sandisk Technologies Inc. Programming non-volatile memory with a reduced number of verify operations
KR101633018B1 (en) * 2009-12-28 2016-06-24 삼성전자주식회사 Flash memory device and program method thereof
KR101656384B1 (en) * 2010-06-10 2016-09-12 삼성전자주식회사 Method of writing data in a non-volatile memory device
JP2011258289A (en) 2010-06-10 2011-12-22 Toshiba Corp Method for detecting threshold value of memory cell
JP5380506B2 (en) 2011-09-22 2014-01-08 株式会社東芝 Nonvolatile semiconductor memory device
JP2014053060A (en) 2012-09-07 2014-03-20 Toshiba Corp Semiconductor storage device and control method of the same
JP2014063551A (en) 2012-09-21 2014-04-10 Toshiba Corp Semiconductor memory device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050162916A1 (en) * 2004-01-27 2005-07-28 Guterman Daniel C. Efficient verification for coarse/fine programming of non-volatile memory
US20050162923A1 (en) * 2004-01-27 2005-07-28 Guterman Daniel C. Charge packet metering for coarse/fine programming of non-volatile memory
US20050248988A1 (en) * 2004-05-05 2005-11-10 Guterman Daniel C Boosting to control programming of non-volatile memory

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3679544B2 (en) * 1997-03-28 2005-08-03 三洋電機株式会社 Non-volatile semiconductor memory device
US7136304B2 (en) * 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
JP3977799B2 (en) * 2003-12-09 2007-09-19 株式会社東芝 Nonvolatile semiconductor memory device
US7170793B2 (en) * 2004-04-13 2007-01-30 Sandisk Corporation Programming inhibit for non-volatile memory
US7324383B2 (en) * 2005-06-15 2008-01-29 Micron Technology, Inc. Selective slow programming convergence in a flash memory device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050162916A1 (en) * 2004-01-27 2005-07-28 Guterman Daniel C. Efficient verification for coarse/fine programming of non-volatile memory
US20050162923A1 (en) * 2004-01-27 2005-07-28 Guterman Daniel C. Charge packet metering for coarse/fine programming of non-volatile memory
US20050248988A1 (en) * 2004-05-05 2005-11-10 Guterman Daniel C Boosting to control programming of non-volatile memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101559088B1 (en) 2008-04-08 2015-10-08 샌디스크 테크놀로지스, 인코포레이티드 Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise

Also Published As

Publication number Publication date Type
JP4638544B2 (en) 2011-02-23 grant
JP2009522707A (en) 2009-06-11 application
WO2007076512A2 (en) 2007-07-05 application
KR101317625B1 (en) 2013-10-10 grant
EP1966802A2 (en) 2008-09-10 application
KR20080096645A (en) 2008-10-31 application

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