DE602005022180D1 - Mit spin-dämmung erweitertes element mit magnetoresistiver wirkung und dieses verwendender magnetspeicher - Google Patents

Mit spin-dämmung erweitertes element mit magnetoresistiver wirkung und dieses verwendender magnetspeicher

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Publication number
DE602005022180D1
DE602005022180D1 DE602005022180T DE602005022180T DE602005022180D1 DE 602005022180 D1 DE602005022180 D1 DE 602005022180D1 DE 602005022180 T DE602005022180 T DE 602005022180T DE 602005022180 T DE602005022180 T DE 602005022180T DE 602005022180 D1 DE602005022180 D1 DE 602005022180D1
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DE
Germany
Prior art keywords
spin
magnetic memory
magnetoresistive effect
extended element
insulation extended
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Active
Application number
DE602005022180T
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English (en)
Inventor
Valet Thierry
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Grandis Inc
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Grandis Inc
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Publication date
Application filed by Grandis Inc filed Critical Grandis Inc
Publication of DE602005022180D1 publication Critical patent/DE602005022180D1/de
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Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
DE602005022180T 2004-05-11 2005-05-11 Mit spin-dämmung erweitertes element mit magnetoresistiver wirkung und dieses verwendender magnetspeicher Active DE602005022180D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/843,157 US7088609B2 (en) 2004-05-11 2004-05-11 Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same
PCT/US2005/017531 WO2005112034A2 (en) 2004-05-11 2005-05-11 Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same

Publications (1)

Publication Number Publication Date
DE602005022180D1 true DE602005022180D1 (de) 2010-08-19

Family

ID=35309235

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005022180T Active DE602005022180D1 (de) 2004-05-11 2005-05-11 Mit spin-dämmung erweitertes element mit magnetoresistiver wirkung und dieses verwendender magnetspeicher

Country Status (7)

Country Link
US (1) US7088609B2 (de)
EP (1) EP1745488B1 (de)
JP (1) JP2007537608A (de)
KR (1) KR100869187B1 (de)
CN (1) CN1961377A (de)
DE (1) DE602005022180D1 (de)
WO (1) WO2005112034A2 (de)

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CN1961377A (zh) 2007-05-09
EP1745488A2 (de) 2007-01-24
KR100869187B1 (ko) 2008-11-18
US20050254287A1 (en) 2005-11-17
WO2005112034A2 (en) 2005-11-24
KR20070004094A (ko) 2007-01-05
US7088609B2 (en) 2006-08-08
EP1745488A4 (de) 2008-06-25
JP2007537608A (ja) 2007-12-20
EP1745488B1 (de) 2010-07-07

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