DE102005035165B8 - Magnetischer Speicher mit statischem magnetischen Verschiebungsfeld - Google Patents
Magnetischer Speicher mit statischem magnetischen Verschiebungsfeld Download PDFInfo
- Publication number
- DE102005035165B8 DE102005035165B8 DE102005035165A DE102005035165A DE102005035165B8 DE 102005035165 B8 DE102005035165 B8 DE 102005035165B8 DE 102005035165 A DE102005035165 A DE 102005035165A DE 102005035165 A DE102005035165 A DE 102005035165A DE 102005035165 B8 DE102005035165 B8 DE 102005035165B8
- Authority
- DE
- Germany
- Prior art keywords
- magnetic
- displacement field
- static
- memory
- magnetic memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/920,562 US7075807B2 (en) | 2004-08-18 | 2004-08-18 | Magnetic memory with static magnetic offset field |
US10/920562 | 2004-08-18 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE102005035165A1 DE102005035165A1 (de) | 2006-03-09 |
DE102005035165B4 DE102005035165B4 (de) | 2008-09-04 |
DE102005035165B8 true DE102005035165B8 (de) | 2009-01-02 |
Family
ID=35852681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102005035165A Expired - Fee Related DE102005035165B8 (de) | 2004-08-18 | 2005-07-27 | Magnetischer Speicher mit statischem magnetischen Verschiebungsfeld |
Country Status (2)
Country | Link |
---|---|
US (1) | US7075807B2 (de) |
DE (1) | DE102005035165B8 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100684893B1 (ko) * | 2005-03-28 | 2007-02-20 | 삼성전자주식회사 | 자기 메모리 장치 및 그 제조방법 |
JP2007027415A (ja) * | 2005-07-15 | 2007-02-01 | Toshiba Corp | 磁気記憶装置 |
TWI324344B (en) * | 2007-02-16 | 2010-05-01 | Ind Tech Res Inst | Writing method on magnetic memory cell and magetic memory array structure |
US8469832B2 (en) * | 2009-11-03 | 2013-06-25 | Wonderland Nurserygoods Company Limited | Swing apparatus with detachable infant holding device |
US8358154B2 (en) | 2010-10-29 | 2013-01-22 | Honeywell International Inc. | Magnetic logic gate |
US8427199B2 (en) | 2010-10-29 | 2013-04-23 | Honeywell International Inc. | Magnetic logic gate |
US8374020B2 (en) | 2010-10-29 | 2013-02-12 | Honeywell International Inc. | Reduced switching-energy magnetic elements |
US8358149B2 (en) | 2010-10-29 | 2013-01-22 | Honeywell International Inc. | Magnetic logic gate |
US8427197B2 (en) | 2011-06-15 | 2013-04-23 | Honeywell International Inc. | Configurable reference circuit for logic gates |
US8885395B2 (en) * | 2012-02-22 | 2014-11-11 | Avalanche Technology, Inc. | Magnetoresistive logic cell and method of use |
US8891291B2 (en) * | 2012-02-22 | 2014-11-18 | Avalanche Technology, Inc. | Magnetoresistive logic cell and method of use |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19836567C2 (de) * | 1998-08-12 | 2000-12-07 | Siemens Ag | Speicherzellenanordnung mit Speicherelementen mit magnetoresistivem Effekt und Verfahren zu deren Herstellung |
US6211090B1 (en) * | 2000-03-21 | 2001-04-03 | Motorola, Inc. | Method of fabricating flux concentrating layer for use with magnetoresistive random access memories |
US6413788B1 (en) * | 2001-02-28 | 2002-07-02 | Micron Technology, Inc. | Keepers for MRAM electrodes |
US6545906B1 (en) * | 2001-10-16 | 2003-04-08 | Motorola, Inc. | Method of writing to scalable magnetoresistance random access memory element |
US20030111626A1 (en) * | 2001-12-18 | 2003-06-19 | Keiji Hosotani | Magnetic memory device having magnetic shield layer, and manufacturing method thereof |
US6872993B1 (en) * | 1999-05-25 | 2005-03-29 | Micron Technology, Inc. | Thin film memory device having local and external magnetic shielding |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3667244B2 (ja) * | 2001-03-19 | 2005-07-06 | キヤノン株式会社 | 磁気抵抗素子、それを用いたメモリ素子、磁気ランダムアクセスメモリ及び磁気ランダムアクセスメモリの記録再生方法 |
US6713830B2 (en) * | 2001-03-19 | 2004-03-30 | Canon Kabushiki Kaisha | Magnetoresistive element, memory element using the magnetoresistive element, and recording/reproduction method for the memory element |
US6958604B2 (en) * | 2003-06-23 | 2005-10-25 | Schlumberger Technology Corporation | Apparatus and methods for J-edit nuclear magnetic resonance measurement |
JP2005223193A (ja) * | 2004-02-06 | 2005-08-18 | Tdk Corp | 磁気抵抗効果素子、薄膜磁気ヘッド、薄膜磁気ヘッドのウエハ、ヘッドジンバルアセンブリ、ヘッドアームアセンブリ、ヘッドスタックアセンブリ、およびハードディスク装置 |
-
2004
- 2004-08-18 US US10/920,562 patent/US7075807B2/en not_active Expired - Fee Related
-
2005
- 2005-07-27 DE DE102005035165A patent/DE102005035165B8/de not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19836567C2 (de) * | 1998-08-12 | 2000-12-07 | Siemens Ag | Speicherzellenanordnung mit Speicherelementen mit magnetoresistivem Effekt und Verfahren zu deren Herstellung |
US6872993B1 (en) * | 1999-05-25 | 2005-03-29 | Micron Technology, Inc. | Thin film memory device having local and external magnetic shielding |
US6211090B1 (en) * | 2000-03-21 | 2001-04-03 | Motorola, Inc. | Method of fabricating flux concentrating layer for use with magnetoresistive random access memories |
US6413788B1 (en) * | 2001-02-28 | 2002-07-02 | Micron Technology, Inc. | Keepers for MRAM electrodes |
US6545906B1 (en) * | 2001-10-16 | 2003-04-08 | Motorola, Inc. | Method of writing to scalable magnetoresistance random access memory element |
US20030111626A1 (en) * | 2001-12-18 | 2003-06-19 | Keiji Hosotani | Magnetic memory device having magnetic shield layer, and manufacturing method thereof |
Non-Patent Citations (4)
Title |
---|
HE, L.N.; CLEGG, W.W.; WILTON, D.T.; ROBINSON, P. ; NAKAMURA, Y.: "Feasibility of ultra-dense spin-t unneling random access memory" IEEE Transactions o n Magnetics, Bd. 33, Nr. 6, Nov. 1997, 4498-4512 |
HE, L.N.; CLEGG, W.W.; WILTON, D.T.; ROBINSON, P. ; NAKAMURA, Y.: "Feasibility of ultra-dense spin-tunneling random access memory" IEEE Transactions on Magnetics, Bd. 33, Nr. 6, Nov. 1997, 4498-4512 * |
HUGHES,B.: "Magnetoresistive random access memory (MRAM) and reliability" 42nd Annual. IEEE Internat ional Reliability Physics Symposium Proceedings, 2 5-29 April 2004, 194-199; WANG, Z.G.; MAPPS, D.J. |
HUGHES,B.: "Magnetoresistive random access memory (MRAM) and reliability" 42nd Annual. IEEE International Reliability Physics Symposium Proceedings, 25-29 April 2004, 194-199; WANG, Z.G.; MAPPS, D.J. * |
Also Published As
Publication number | Publication date |
---|---|
US20060038211A1 (en) | 2006-02-23 |
DE102005035165A1 (de) | 2006-03-09 |
DE102005035165B4 (de) | 2008-09-04 |
US7075807B2 (en) | 2006-07-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8127 | New person/name/address of the applicant |
Owner name: QIMONDA AG, 81739 MUENCHEN, DE Owner name: ALTIS SEMICONDUCTOR SNC, CORBEIL ESSONNES CEDE, FR |
|
8396 | Reprint of erroneous front page | ||
8364 | No opposition during term of opposition | ||
R081 | Change of applicant/patentee |
Owner name: ALTIS SEMICONDUCTOR, FR Free format text: FORMER OWNER: ALTIS SEMICONDUCTOR SNC, QIMONDA AG, , FR Owner name: INFINEON TECHNOLOGIES AG, DE Free format text: FORMER OWNER: ALTIS SEMICONDUCTOR SNC, QIMONDA AG, , FR Owner name: ALTIS SEMICONDUCTOR, FR Free format text: FORMER OWNERS: ALTIS SEMICONDUCTOR SNC, CORBEIL ESSONNES, FR; QIMONDA AG, 81739 MUENCHEN, DE Owner name: INFINEON TECHNOLOGIES AG, DE Free format text: FORMER OWNERS: ALTIS SEMICONDUCTOR SNC, CORBEIL ESSONNES, FR; QIMONDA AG, 81739 MUENCHEN, DE |
|
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |