DE602005010662D1 - Magnetische Tunnelübergangsanordnung mit amorpher NiFeSiB Freischicht - Google Patents

Magnetische Tunnelübergangsanordnung mit amorpher NiFeSiB Freischicht

Info

Publication number
DE602005010662D1
DE602005010662D1 DE602005010662T DE602005010662T DE602005010662D1 DE 602005010662 D1 DE602005010662 D1 DE 602005010662D1 DE 602005010662 T DE602005010662 T DE 602005010662T DE 602005010662 T DE602005010662 T DE 602005010662T DE 602005010662 D1 DE602005010662 D1 DE 602005010662D1
Authority
DE
Germany
Prior art keywords
nifesib
amorphous
free layer
tunnel junction
magnetic tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005010662T
Other languages
English (en)
Inventor
Young Keun Kim
Byong-Sun Chun
Jang-Roh Rhee
Jae-Youn Hwang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Korea University Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050019395A external-priority patent/KR100586265B1/ko
Priority claimed from KR1020050019402A external-priority patent/KR100586267B1/ko
Application filed by Korea University Foundation filed Critical Korea University Foundation
Publication of DE602005010662D1 publication Critical patent/DE602005010662D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
  • Semiconductor Memories (AREA)
DE602005010662T 2005-03-09 2005-09-26 Magnetische Tunnelübergangsanordnung mit amorpher NiFeSiB Freischicht Active DE602005010662D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050019395A KR100586265B1 (ko) 2005-03-09 2005-03-09 비정질 코발트-철-실리콘-보론 자유층을 구비하는 자기 터널 접합
KR1020050019402A KR100586267B1 (ko) 2005-03-09 2005-03-09 비정질 니켈-철-실리콘-보론 자유층을 구비하는 자기 터널접합

Publications (1)

Publication Number Publication Date
DE602005010662D1 true DE602005010662D1 (de) 2008-12-11

Family

ID=36593701

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005010662T Active DE602005010662D1 (de) 2005-03-09 2005-09-26 Magnetische Tunnelübergangsanordnung mit amorpher NiFeSiB Freischicht

Country Status (4)

Country Link
US (1) US7304359B2 (de)
EP (1) EP1701357B1 (de)
JP (1) JP2006253637A (de)
DE (1) DE602005010662D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006006420A1 (ja) * 2004-07-12 2008-04-24 日本電気株式会社 磁気抵抗効素子、磁気ランダムアクセスメモリ、磁気ヘッド及び磁気記憶装置
WO2007013887A2 (en) * 2004-10-15 2007-02-01 The Trustees Of Columbia University In The City Of New York Methods of manipulating the relaxation rate in magnetic materials and devices for using the same
US8582252B2 (en) * 2005-11-02 2013-11-12 Seagate Technology Llc Magnetic layer with grain refining agent
KR100718153B1 (ko) 2006-02-17 2007-05-14 삼성전자주식회사 마그네틱 도메인 이동을 이용한 자기메모리
KR100754397B1 (ko) 2006-02-22 2007-08-31 삼성전자주식회사 마그네틱 도메인 이동을 이용한 자기메모리
JP5003109B2 (ja) * 2006-11-14 2012-08-15 富士通株式会社 強磁性トンネル接合素子、その製造方法、及びそれを用いた磁気ヘッド、磁気メモリ
KR100834811B1 (ko) * 2006-11-28 2008-06-09 고려대학교 산학협력단 수직 자기 이방성을 가지는 코발트-철-실리콘-보론/플래티늄 다층박막
US8638601B1 (en) 2012-07-06 2014-01-28 International Business Machines Corporation Domain wall motion in perpendicularly magnetized wires having magnetic multilayers with engineered interfaces
US8687415B2 (en) 2012-07-06 2014-04-01 International Business Machines Corporation Domain wall motion in perpendicularly magnetized wires having artificial antiferromagnetically coupled multilayers with engineered interfaces
KR101738829B1 (ko) * 2016-12-14 2017-05-22 고려대학교 산학협력단 수직자기이방성을 갖는 다층 박막
KR101738828B1 (ko) 2016-12-14 2017-05-22 고려대학교 산학협력단 수직자기이방성을 갖는 합금 박막

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933183B2 (ja) * 1980-06-24 1984-08-14 株式会社東芝 低損失非晶質合金
JP2001006130A (ja) * 1999-06-24 2001-01-12 Tdk Corp トンネル磁気抵抗効果型ヘッド
JP4428051B2 (ja) * 2001-10-12 2010-03-10 ソニー株式会社 磁気抵抗効果素子、磁気メモリ素子、磁気メモリ装置
JP2004022599A (ja) * 2002-06-12 2004-01-22 Sony Corp 磁気抵抗効果素子及び磁気メモリ装置、磁気抵抗効果素子及び磁気メモリ装置の製造方法
JP4178867B2 (ja) * 2002-08-02 2008-11-12 ソニー株式会社 磁気抵抗効果素子及び磁気メモリ装置
JP2004179187A (ja) * 2002-11-22 2004-06-24 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
KR100579090B1 (ko) 2003-08-19 2006-05-15 (주)케이돔엔지니어링 공기팽창막을 이용한 돔형 안전 놀이 시스템
KR100536889B1 (ko) 2003-08-19 2005-12-16 한휘주식회사 가방용 견착벨트 자동수납장치

Also Published As

Publication number Publication date
EP1701357B1 (de) 2008-10-29
JP2006253637A (ja) 2006-09-21
EP1701357A1 (de) 2006-09-13
US7304359B2 (en) 2007-12-04
US20060202290A1 (en) 2006-09-14

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